CN1930668A - 绝缘膜的改性方法 - Google Patents

绝缘膜的改性方法 Download PDF

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Publication number
CN1930668A
CN1930668A CNA2004800150997A CN200480015099A CN1930668A CN 1930668 A CN1930668 A CN 1930668A CN A2004800150997 A CNA2004800150997 A CN A2004800150997A CN 200480015099 A CN200480015099 A CN 200480015099A CN 1930668 A CN1930668 A CN 1930668A
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China
Prior art keywords
plasma
insulating film
gas
treatment
thermal annealing
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Pending
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CNA2004800150997A
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English (en)
Chinese (zh)
Inventor
菅原卓也
多田吉秀
中村源志
尾﨑成则
中西敏雄
佐佐木胜
松山征嗣
长谷部一秀
中岛滋
藤原友纪
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN1930668A publication Critical patent/CN1930668A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01338—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/0134—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01346—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a gaseous ambient using an oxygen or a water vapour, e.g. oxidation through a layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69392—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing hafnium, e.g. HfO2

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
CNA2004800150997A 2003-05-30 2004-05-28 绝缘膜的改性方法 Pending CN1930668A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP154812/2003 2003-05-30
JP2003154812A JP4408653B2 (ja) 2003-05-30 2003-05-30 基板処理方法および半導体装置の製造方法
PCT/JP2004/007841 WO2004107431A1 (ja) 2003-05-30 2004-05-28 絶縁膜の改質方法

Publications (1)

Publication Number Publication Date
CN1930668A true CN1930668A (zh) 2007-03-14

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ID=33487334

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CNA2004800150997A Pending CN1930668A (zh) 2003-05-30 2004-05-28 绝缘膜的改性方法

Country Status (6)

Country Link
US (2) US7655574B2 (https=)
JP (1) JP4408653B2 (https=)
KR (1) KR100887330B1 (https=)
CN (1) CN1930668A (https=)
TW (1) TW200509256A (https=)
WO (1) WO2004107431A1 (https=)

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Publication number Priority date Publication date Assignee Title
CN103975424A (zh) * 2011-12-06 2014-08-06 英特尔公司 用于非平面晶体管的夹层电介质
WO2015101011A1 (zh) * 2013-12-31 2015-07-09 京东方科技集团股份有限公司 一种半导体器件的制备方法及半导体器件
CN105336628A (zh) * 2015-09-25 2016-02-17 武汉新芯集成电路制造有限公司 一种晶圆表面键合工艺及一种半导体器件结构
US9580776B2 (en) 2011-09-30 2017-02-28 Intel Corporation Tungsten gates for non-planar transistors
US9853156B2 (en) 2011-10-01 2017-12-26 Intel Corporation Source/drain contacts for non-planar transistors
CN108475632A (zh) * 2015-12-25 2018-08-31 东京毅力科创株式会社 基板处理方法

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JP4256340B2 (ja) * 2002-05-16 2009-04-22 東京エレクトロン株式会社 基板処理方法
TW200511430A (en) * 2003-05-29 2005-03-16 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method
WO2006025363A1 (ja) * 2004-08-31 2006-03-09 Tokyo Electron Limited シリコン酸化膜の形成方法、半導体装置の製造方法およびコンピュータ記憶媒体
JP2006203120A (ja) * 2005-01-24 2006-08-03 Toshiba Corp 半導体装置の製造方法
JP2007081265A (ja) * 2005-09-16 2007-03-29 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7888217B2 (en) * 2005-10-20 2011-02-15 Applied Materials, Inc. Method for fabricating a gate dielectric of a field effect transistor
US7767515B2 (en) * 2006-02-27 2010-08-03 Synopsys, Inc. Managing integrated circuit stress using stress adjustment trenches
WO2007138937A1 (en) * 2006-05-26 2007-12-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7951693B2 (en) 2006-12-22 2011-05-31 Philips Lumileds Lighting Company, Llc III-nitride light emitting devices grown on templates to reduce strain
US7691693B2 (en) * 2007-06-01 2010-04-06 Synopsys, Inc. Method for suppressing layout sensitivity of threshold voltage in a transistor array
US7895548B2 (en) * 2007-10-26 2011-02-22 Synopsys, Inc. Filler cells for design optimization in a place-and-route system
US20090108408A1 (en) * 2007-10-29 2009-04-30 Synopsys, Inc. Method for Trapping Implant Damage in a Semiconductor Substrate
US9472423B2 (en) * 2007-10-30 2016-10-18 Synopsys, Inc. Method for suppressing lattice defects in a semiconductor substrate
JP4611414B2 (ja) 2007-12-26 2011-01-12 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
US8810000B2 (en) 2008-01-22 2014-08-19 Renesas Electronics Corporation Semiconductor device comprising capacitive element
JP2011124240A (ja) * 2008-03-31 2011-06-23 Tokyo Electron Ltd Ｍｏｓ型半導体メモリ装置、その製造方法およびコンピュータ読み取り可能な記憶媒体
JP4636133B2 (ja) 2008-07-22 2011-02-23 東京エレクトロン株式会社 窒化チタン膜の改質方法及び改質装置
JP5166297B2 (ja) 2009-01-21 2013-03-21 東京エレクトロン株式会社 酸化珪素膜の形成方法、半導体メモリ装置の製造方法およびコンピュータ読み取り可能な記憶媒体
EP2761664A4 (en) 2011-09-30 2015-06-17 Intel Corp CLOSING DIELECTRIC STRUCTURES FOR TRANSISTOR GATES
KR101780916B1 (ko) 2011-09-30 2017-09-21 인텔 코포레이션 집적회로 구조 및 집적회로 구조의 제조 방법
US20140042152A1 (en) * 2012-08-08 2014-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Variable frequency microwave device and method for rectifying wafer warpage
US9412847B2 (en) 2013-03-11 2016-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned passivation of active regions
KR102263827B1 (ko) * 2014-03-21 2021-06-14 삼성디스플레이 주식회사 산화물 반도체 증착장치 및 이를 이용한 산화물 반도체의 제조 방법
US10737575B2 (en) 2017-11-22 2020-08-11 Ford Global Technologies, Llc Power device parameter adjustment
KR20240111974A (ko) * 2023-01-11 2024-07-18 에스케이하이닉스 주식회사 셀렉터 및 이를 포함하는 반도체 장치의 제조 방법

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JP2004079931A (ja) * 2002-08-22 2004-03-11 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
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US9812546B2 (en) 2011-09-30 2017-11-07 Intel Corporation Tungsten gates for non-planar transistors
US10020375B2 (en) 2011-09-30 2018-07-10 Intel Corporation Tungsten gates for non-planar transistors
US9580776B2 (en) 2011-09-30 2017-02-28 Intel Corporation Tungsten gates for non-planar transistors
US9637810B2 (en) 2011-09-30 2017-05-02 Intel Corporation Tungsten gates for non-planar transistors
US10770591B2 (en) 2011-10-01 2020-09-08 Intel Corporation Source/drain contacts for non-planar transistors
US9853156B2 (en) 2011-10-01 2017-12-26 Intel Corporation Source/drain contacts for non-planar transistors
US10283640B2 (en) 2011-10-01 2019-05-07 Intel Corporation Source/drain contacts for non-planar transistors
US9634124B2 (en) 2011-12-06 2017-04-25 Intel Corporation Interlayer dielectric for non-planar transistors
CN103975424B (zh) * 2011-12-06 2016-12-07 英特尔公司 用于非平面晶体管的夹层电介质
US10056488B2 (en) 2011-12-06 2018-08-21 Intel Corporation Interlayer dielectric for non-planar transistors
CN103975424A (zh) * 2011-12-06 2014-08-06 英特尔公司 用于非平面晶体管的夹层电介质
US10693006B2 (en) 2011-12-06 2020-06-23 Intel Corporation Interlayer dielectric for non-planar transistors
US10998445B2 (en) 2011-12-06 2021-05-04 Intel Corporation Interlayer dielectric for non-planar transistors
WO2015101011A1 (zh) * 2013-12-31 2015-07-09 京东方科技集团股份有限公司 一种半导体器件的制备方法及半导体器件
US9647127B2 (en) 2013-12-31 2017-05-09 Boe Technology Group Co., Ltd. Semiconductor device and method for manufacturing the same
CN105336628B (zh) * 2015-09-25 2018-10-19 武汉新芯集成电路制造有限公司 一种晶圆表面键合工艺及一种半导体器件结构
CN105336628A (zh) * 2015-09-25 2016-02-17 武汉新芯集成电路制造有限公司 一种晶圆表面键合工艺及一种半导体器件结构
CN108475632A (zh) * 2015-12-25 2018-08-31 东京毅力科创株式会社 基板处理方法
CN108475632B (zh) * 2015-12-25 2023-04-04 东京毅力科创株式会社 基板处理方法

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Publication number Publication date
US20060199398A1 (en) 2006-09-07
US7655574B2 (en) 2010-02-02
KR100887330B1 (ko) 2009-03-06
JP2004356528A (ja) 2004-12-16
US8021987B2 (en) 2011-09-20
KR20060006096A (ko) 2006-01-18
TWI354332B (https=) 2011-12-11
JP4408653B2 (ja) 2010-02-03
WO2004107431A1 (ja) 2004-12-09
TW200509256A (en) 2005-03-01
US20100105215A1 (en) 2010-04-29

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