CN1926254A - Ni-Pt合金和Ni-Pt合金靶 - Google Patents
Ni-Pt合金和Ni-Pt合金靶 Download PDFInfo
- Publication number
- CN1926254A CN1926254A CNA2005800065132A CN200580006513A CN1926254A CN 1926254 A CN1926254 A CN 1926254A CN A2005800065132 A CNA2005800065132 A CN A2005800065132A CN 200580006513 A CN200580006513 A CN 200580006513A CN 1926254 A CN1926254 A CN 1926254A
- Authority
- CN
- China
- Prior art keywords
- alloy
- high purity
- target
- purity
- hardness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25C1/00—Electrolytic production, recovery or refining of metals by electrolysis of solutions
- C25C1/20—Electrolytic production, recovery or refining of metals by electrolysis of solutions of noble metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
Abstract
Description
原料Ni | 原料Pt | 高纯度Ni | 高纯度Pt | 实施例1 | 比较例1 | |
Fe | 110 | 10 | 2.1 | 1.0 | 1.7 | 90 |
Cr | 50 | 2 | 0.6 | 0.5 | 0.6 | 44 |
Co | 60 | 5 | 0.5 | 0.2 | 0.4 | 49 |
Cu | 30 | 4 | 0.1 | 0.1 | 0.1 | 25 |
Al | 10 | 8 | 0.1 | 0.1 | 0.1 | 9.5 |
O | 150 | 70 | 20 | <10 | 10 | 130 |
C | 80 | 20 | 10 | <10 | 10 | 70 |
N | 30 | 10 | <10 | <10 | <10 | 25 |
硬度 | 100 | 40 | 70 | 30 | 80 | 110 |
室温下的塑性加工性 | △ | ○ | ○ | ◎ | ◎ | × |
实施例2 | 实施例3 | 实施例4 | |
Fe | 2.0 | 1.9 | 1.8 |
Cr | 0.6 | 0.6 | 0.6 |
Co | 0.5 | 0.5 | 0.5 |
Cu | 0.1 | 0.1 | 0.1 |
Al | 0.1 | 0.1 | 0.1 |
O | 20 | 20 | 20 |
C | 10 | 10 | 10 |
N | <10 | <10 | <10 |
硬度 | 45 | 55 | 65 |
室温下的塑性加工性 | ◎ | ◎ | ◎ |
Claims (6)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP056097/2004 | 2004-03-01 | ||
JP2004056097 | 2004-03-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1926254A true CN1926254A (zh) | 2007-03-07 |
CN100567535C CN100567535C (zh) | 2009-12-09 |
Family
ID=34908895
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005800065132A Active CN100567535C (zh) | 2004-03-01 | 2005-02-08 | Ni-Pt合金和Ni-Pt合金靶 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20070098590A1 (zh) |
EP (2) | EP1721997B1 (zh) |
JP (2) | JP4409572B2 (zh) |
KR (2) | KR101021488B1 (zh) |
CN (1) | CN100567535C (zh) |
TW (1) | TWI264480B (zh) |
WO (1) | WO2005083138A1 (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102803550A (zh) * | 2010-03-19 | 2012-11-28 | 吉坤日矿日石金属株式会社 | 镍合金溅射靶、Ni合金薄膜及镍硅化物膜 |
CN103348037A (zh) * | 2011-02-09 | 2013-10-09 | 应用材料公司 | 具有受保护的背板的pvd溅射靶 |
CN104018128A (zh) * | 2014-05-29 | 2014-09-03 | 贵研铂业股份有限公司 | 一种镍铂合金溅射靶材及其制备方法 |
CN104726829A (zh) * | 2013-12-18 | 2015-06-24 | 有研亿金新材料股份有限公司 | 一种高纯NiPt合金靶材及其制备方法 |
CN106282639A (zh) * | 2016-09-19 | 2017-01-04 | 中材科技股份有限公司 | 一种铂镍合金溅射靶材及其制备方法 |
CN111304608A (zh) * | 2020-03-17 | 2020-06-19 | 贵研铂业股份有限公司 | 一种晶粒高定向取向的镍铂合金溅射靶材及其制备方法 |
CN112853131A (zh) * | 2020-12-30 | 2021-05-28 | 有研亿金新材料有限公司 | 一种高纯度低气体含量镍铂合金的制备方法 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4376487B2 (ja) * | 2002-01-18 | 2009-12-02 | 日鉱金属株式会社 | 高純度ニッケル合金ターゲットの製造方法 |
JP4466902B2 (ja) * | 2003-01-10 | 2010-05-26 | 日鉱金属株式会社 | ニッケル合金スパッタリングターゲット |
US8871144B2 (en) * | 2003-10-07 | 2014-10-28 | Jx Nippon Mining & Metals Corporation | High-purity Ni-V alloy target therefrom high-purity Ni-V alloy thin film and process for producing high-purity Ni-V alloy |
US7605481B2 (en) * | 2003-10-24 | 2009-10-20 | Nippon Mining & Metals Co., Ltd. | Nickel alloy sputtering target and nickel alloy thin film |
KR101021488B1 (ko) * | 2004-03-01 | 2011-03-16 | Jx닛코 닛세끼 킨조쿠 가부시키가이샤 | 니켈-플라티늄 합금 및 동(同) 합금 타겟트 |
US20090028744A1 (en) * | 2007-07-23 | 2009-01-29 | Heraeus, Inc. | Ultra-high purity NiPt alloys and sputtering targets comprising same |
JP5301530B2 (ja) * | 2008-03-28 | 2013-09-25 | Jx日鉱日石金属株式会社 | 磁性材ターゲット用白金粉末、同粉末の製造方法、白金焼結体からなる磁性材ターゲットの製造方法及び同焼結磁性材ターゲット |
US20100154867A1 (en) | 2008-12-19 | 2010-06-24 | E. I. Du Pont De Nemours And Company | Mechanically reliable solar cell modules |
JP2009167530A (ja) * | 2009-02-10 | 2009-07-30 | Nippon Mining & Metals Co Ltd | ニッケル合金スパッタリングターゲット及びニッケルシリサイド膜 |
KR101032011B1 (ko) | 2009-02-10 | 2011-05-02 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 니켈 합금 스퍼터링 타겟 및 니켈실리사이드막 |
JP5226155B2 (ja) | 2010-08-31 | 2013-07-03 | Jx日鉱日石金属株式会社 | Fe−Pt系強磁性材スパッタリングターゲット |
JP6340621B2 (ja) * | 2013-07-26 | 2018-06-13 | 三菱マテリアル株式会社 | Niスパッタリングターゲット及びその製造方法 |
CN106133185B (zh) | 2014-03-27 | 2018-09-28 | 捷客斯金属株式会社 | 包含Ni-P合金或Ni-Pt-P合金的溅射靶及其制造方法 |
WO2015183600A1 (en) | 2014-05-30 | 2015-12-03 | National Oilwell Varco, L.P. | Wellsite pump with integrated driver and hydraulic motor and method of using same |
WO2016208704A1 (ja) | 2015-06-26 | 2016-12-29 | 国立大学法人東京工業大学 | 半導体デバイス電極用のシリサイド合金膜及びシリサイド合金膜の製造方法 |
CN113881920A (zh) * | 2020-07-03 | 2022-01-04 | 光洋应用材料科技股份有限公司 | 镍铂合金靶材及其制法 |
IT202100003281A1 (it) | 2021-02-15 | 2022-08-15 | Bluclad S P A | Lega pt-ni elettrodepositata anallergica e relativi bagno e ciclo galvanico |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2269497A (en) * | 1940-08-26 | 1942-01-13 | Owens Corning Flberglas Corp | Nickel-platinum alloy |
JPS6333563A (ja) | 1986-07-25 | 1988-02-13 | Tanaka Kikinzoku Kogyo Kk | スパツタリング用Pt−Ni合金タ−ゲツトの製造方法 |
GB2242203A (en) * | 1990-03-21 | 1991-09-25 | Johnson Matthey Plc | Catalyst material comprising platinum alloy supported on carbon |
US5188713A (en) * | 1991-03-05 | 1993-02-23 | Envirochip Technologies Ltd. | Process for recovery of metal |
JPH0543921A (ja) * | 1991-08-12 | 1993-02-23 | Murata Mfg Co Ltd | ニツケル微粉末の製造方法 |
EP0535314A1 (en) * | 1991-08-30 | 1993-04-07 | Mitsubishi Materials Corporation | Platinum-cobalt alloy sputtering target and method for manufacturing same |
US6569270B2 (en) * | 1997-07-11 | 2003-05-27 | Honeywell International Inc. | Process for producing a metal article |
JPH11152592A (ja) * | 1997-11-18 | 1999-06-08 | Japan Energy Corp | 高純度ニッケルの製造方法及び薄膜形成用高純度ニッケル材料 |
JPH11335821A (ja) | 1998-05-20 | 1999-12-07 | Japan Energy Corp | 磁性薄膜形成用Ni−Fe合金スパッタリングターゲット、磁性薄膜および磁性薄膜形成用Ni−Fe合金スパッタリングターゲットの製造方法 |
SG97821A1 (en) * | 1999-11-17 | 2003-08-20 | Inst Materials Research & Eng | A method of fabricating semiconductor structures and a semiconductor structure formed thereby |
US20020139457A1 (en) * | 2001-04-02 | 2002-10-03 | Coppola Vito A. | Method of suppressing the oxidation characteristics of nickel |
US7435325B2 (en) * | 2001-08-01 | 2008-10-14 | Nippon Mining & Metals Co., Ltd | Method for producing high purity nickle, high purity nickle, sputtering target comprising the high purity nickel, and thin film formed by using said spattering target |
JP4376487B2 (ja) * | 2002-01-18 | 2009-12-02 | 日鉱金属株式会社 | 高純度ニッケル合金ターゲットの製造方法 |
JP2003213405A (ja) * | 2002-01-18 | 2003-07-30 | Nikko Materials Co Ltd | 高純度ニッケル又はニッケル合金ターゲット及びその製造方法 |
JP2003213407A (ja) | 2002-01-24 | 2003-07-30 | Nikko Materials Co Ltd | 高純度ニッケル又はニッケル合金スパッタリングターゲット及びその製造方法 |
US6845542B2 (en) * | 2002-08-27 | 2005-01-25 | The Research Foundation Of State University Of New York | Portable, fully contained and disposable suction device |
JP4466902B2 (ja) * | 2003-01-10 | 2010-05-26 | 日鉱金属株式会社 | ニッケル合金スパッタリングターゲット |
US8871144B2 (en) * | 2003-10-07 | 2014-10-28 | Jx Nippon Mining & Metals Corporation | High-purity Ni-V alloy target therefrom high-purity Ni-V alloy thin film and process for producing high-purity Ni-V alloy |
US7605481B2 (en) * | 2003-10-24 | 2009-10-20 | Nippon Mining & Metals Co., Ltd. | Nickel alloy sputtering target and nickel alloy thin film |
KR101021488B1 (ko) * | 2004-03-01 | 2011-03-16 | Jx닛코 닛세끼 킨조쿠 가부시키가이샤 | 니켈-플라티늄 합금 및 동(同) 합금 타겟트 |
-
2005
- 2005-02-08 KR KR1020097019099A patent/KR101021488B1/ko active IP Right Grant
- 2005-02-08 WO PCT/JP2005/001813 patent/WO2005083138A1/ja active Application Filing
- 2005-02-08 KR KR1020067019867A patent/KR100925691B1/ko active IP Right Grant
- 2005-02-08 US US10/596,671 patent/US20070098590A1/en not_active Abandoned
- 2005-02-08 EP EP05709865A patent/EP1721997B1/en active Active
- 2005-02-08 EP EP11188413.6A patent/EP2468906B1/en active Active
- 2005-02-08 CN CNB2005800065132A patent/CN100567535C/zh active Active
- 2005-02-08 JP JP2006510388A patent/JP4409572B2/ja active Active
- 2005-02-21 TW TW094105007A patent/TWI264480B/zh active
-
2009
- 2009-10-09 JP JP2009235184A patent/JP5113134B2/ja active Active
-
2010
- 2010-11-30 US US12/957,013 patent/US7959782B2/en active Active
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102803550A (zh) * | 2010-03-19 | 2012-11-28 | 吉坤日矿日石金属株式会社 | 镍合金溅射靶、Ni合金薄膜及镍硅化物膜 |
CN102803550B (zh) * | 2010-03-19 | 2014-12-10 | 吉坤日矿日石金属株式会社 | 镍合金溅射靶、Ni合金薄膜及镍硅化物膜 |
CN103348037A (zh) * | 2011-02-09 | 2013-10-09 | 应用材料公司 | 具有受保护的背板的pvd溅射靶 |
CN103348037B (zh) * | 2011-02-09 | 2016-01-20 | 应用材料公司 | 具有受保护的背板的pvd溅射靶 |
CN104726829A (zh) * | 2013-12-18 | 2015-06-24 | 有研亿金新材料股份有限公司 | 一种高纯NiPt合金靶材及其制备方法 |
CN104018128A (zh) * | 2014-05-29 | 2014-09-03 | 贵研铂业股份有限公司 | 一种镍铂合金溅射靶材及其制备方法 |
CN104018128B (zh) * | 2014-05-29 | 2016-08-24 | 贵研铂业股份有限公司 | 一种镍铂合金溅射靶材及其制备方法 |
CN106282639A (zh) * | 2016-09-19 | 2017-01-04 | 中材科技股份有限公司 | 一种铂镍合金溅射靶材及其制备方法 |
CN111304608A (zh) * | 2020-03-17 | 2020-06-19 | 贵研铂业股份有限公司 | 一种晶粒高定向取向的镍铂合金溅射靶材及其制备方法 |
CN112853131A (zh) * | 2020-12-30 | 2021-05-28 | 有研亿金新材料有限公司 | 一种高纯度低气体含量镍铂合金的制备方法 |
CN112853131B (zh) * | 2020-12-30 | 2022-07-19 | 有研亿金新材料有限公司 | 一种高纯度低气体含量镍铂合金的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101021488B1 (ko) | 2011-03-16 |
US7959782B2 (en) | 2011-06-14 |
EP1721997A4 (en) | 2009-11-11 |
JP4409572B2 (ja) | 2010-02-03 |
KR20090101393A (ko) | 2009-09-25 |
KR100925691B1 (ko) | 2009-11-10 |
TWI264480B (en) | 2006-10-21 |
EP1721997B1 (en) | 2012-03-28 |
TW200530429A (en) | 2005-09-16 |
JPWO2005083138A1 (ja) | 2007-11-22 |
EP1721997A1 (en) | 2006-11-15 |
EP2468906A1 (en) | 2012-06-27 |
EP2468906B1 (en) | 2014-07-23 |
US20110068014A1 (en) | 2011-03-24 |
CN100567535C (zh) | 2009-12-09 |
US20070098590A1 (en) | 2007-05-03 |
WO2005083138A1 (ja) | 2005-09-09 |
JP5113134B2 (ja) | 2013-01-09 |
JP2010047843A (ja) | 2010-03-04 |
KR20060114384A (ko) | 2006-11-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1926254A (zh) | Ni-Pt合金和Ni-Pt合金靶 | |
KR100457724B1 (ko) | 스퍼터링용 텅스텐 타겟트 및 그 제조방법 | |
US20100163425A1 (en) | Ultrahigh-Purity Copper and Process for Producing the Same | |
CN1715454A (zh) | 高纯镍、由其构成的溅射靶及通过该靶形成的高纯镍薄膜 | |
KR100881851B1 (ko) | 고순도 루테니움 분말, 이 고순도 루테니움 분말을소결하여 얻는 스퍼터링 타겟트 및 이 타겟트를 스퍼터링하여 얻은 박막 및 고순도 루테니움 분말의 제조방법 | |
EP3514249B1 (en) | Metal mask material and method for manufacturing same | |
JP2015034337A (ja) | 高純度銅スパッタリングターゲット用銅素材及び高純度銅スパッタリングターゲット | |
CN111893325A (zh) | 一种高纯钽锭及其制备方法 | |
EP2692877B1 (en) | Copper alloy and method for producing copper alloy | |
CN1766143A (zh) | 经过锭冶金的细粒铌片 | |
JP2019183256A (ja) | スパッタリングターゲット材 | |
WO2022024891A1 (ja) | Cu-Ni-Al系銅合金板材、その製造方法および導電ばね部材 | |
CN111621667A (zh) | 一种铜钛合金及其制备方法 | |
JP5252722B2 (ja) | 高強度・高導電性銅合金及びその製造方法 | |
JP4023282B2 (ja) | イリジウムスパッタリングターゲットの製造方法及びその方法で得られたターゲット | |
JP4831594B2 (ja) | 高純度バナジウムスパッタリングターゲットの製造方法 | |
JP2002332528A (ja) | 高純度ルテニウムのリサイクル方法及びリサイクルされた高純度ルテニウムからのターゲットの製造方法 | |
JP5950632B2 (ja) | スパッタリングターゲットの製造方法 | |
JP2003138322A (ja) | 高純度金属の製造方法、高純度金属、同高純度金属からなるスパッタリングターゲット及び該スパッタリングターゲットにより形成した薄膜 | |
JPH1161392A (ja) | Ru薄膜形成用スパッタリングターゲットの製造方法 | |
CN117604292A (zh) | 一种用于真空腔体的铝合金材料及其制备方法 | |
JP3411212B2 (ja) | 薄膜形成用高純度Ir材料の製造方法 | |
KR20210111671A (ko) | 스퍼터링 타깃재 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: JX NIPPON MINING + METALS CORPORATION Free format text: FORMER NAME: NIPPON MINING + METALS CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: JX Nippon Mining & Metals Corporation Address before: Tokyo, Japan Patentee before: Nippon Mining & Metals Co., Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: JX NIPPON MINING & METALS CORPORATION Address before: Tokyo, Japan Patentee before: JX Nippon Mining & Metals Corporation |