KR20060114384A - 니켈-플라티늄 합금 및 동(同) 합금 타겟트 - Google Patents
니켈-플라티늄 합금 및 동(同) 합금 타겟트 Download PDFInfo
- Publication number
- KR20060114384A KR20060114384A KR1020067019867A KR20067019867A KR20060114384A KR 20060114384 A KR20060114384 A KR 20060114384A KR 1020067019867 A KR1020067019867 A KR 1020067019867A KR 20067019867 A KR20067019867 A KR 20067019867A KR 20060114384 A KR20060114384 A KR 20060114384A
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- KR
- South Korea
- Prior art keywords
- alloy
- target
- purity
- high purity
- solution
- Prior art date
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25C1/00—Electrolytic production, recovery or refining of metals by electrolysis of solutions
- C25C1/20—Electrolytic production, recovery or refining of metals by electrolysis of solutions of noble metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
Abstract
Description
Claims (8)
- Pt 함유량이 0.1~20wt%인 Ni-Pt 합금으로서, 비커스 경도가 40~90인 것을 특징으로 하는 가공성이 우수한 Ni-Pt 합금.
- 제1항에 있어서, 99.99% 이상의 순도를 가지는 것을 특징으로 하는 Ni-Pt 합금.
- 3N 레벨의 원료 Ni를 전기화학적으로 용해하는 공정, 이 전해 침출한 용액을 암모니아로 중화하는 공정, 중화한 용액을 활성탄을 사용하여 여과하여 불순물을 제거하는 공정, 탄산가스를 취입하여 탄산 니켈로 하여, 환원성 분위기에서 고순도 Ni 분말을 제조하는 공정, 한편 3N 레벨의 원료 Pt를 산으로 침출하는 공정, 침출한 용액을 전해에 의해 고순도 전석 Pt를 제조하는 공정으로 이루어지며, 이들의 제조된 고순도 Ni 분말과 고순도 전석 Pt를 용해하는 공정으로 이루어지는 것을 특징으로 하는 가공성이 우수한 Ni-Pt 합금의 제조방법.
- 제3항에 있어서, 99.99% 이상의 순도를 가지는 것을 특징으로 하는 Ni-Pt 합금의 제조방법.
- 제3항 또는 제4항에 있어서, Pt함유량이 0.1~20wt%인 Ni-Pt 합금으로서, 비커스 경도가 40~90인 것을 특징으로 하는 가공성이 우수한 Ni-Pt 합금의 제조방법.
- 제3항 내지 제5항 중 어느 한 항의 공정에 의해 제조한 용해 후의 Ni-Pt 합금 잉고트를 압연하는 것을 특징으로 하는 Ni-Pt 합금 타겟트의 제조방법.
- Pt 함유량이 0.1~20wt%인 Ni-Pt 합금으로서, 비커스 경도가 40~90인 것을 특징으로 하는 가공성이 우수한 Ni-Pt 합금 타겟트.
- 제7항에 있어서, 99.99% 이상의 순도를 가지는 것을 특징으로 하는 Ni-Pt 합금 타겟트.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2004-00056097 | 2004-03-01 | ||
JP2004056097 | 2004-03-01 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020097019099A Division KR101021488B1 (ko) | 2004-03-01 | 2005-02-08 | 니켈-플라티늄 합금 및 동(同) 합금 타겟트 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060114384A true KR20060114384A (ko) | 2006-11-06 |
KR100925691B1 KR100925691B1 (ko) | 2009-11-10 |
Family
ID=34908895
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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KR1020097019099A KR101021488B1 (ko) | 2004-03-01 | 2005-02-08 | 니켈-플라티늄 합금 및 동(同) 합금 타겟트 |
KR1020067019867A KR100925691B1 (ko) | 2004-03-01 | 2005-02-08 | 니켈-플라티늄 합금 및 동(同) 합금 타겟트 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020097019099A KR101021488B1 (ko) | 2004-03-01 | 2005-02-08 | 니켈-플라티늄 합금 및 동(同) 합금 타겟트 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20070098590A1 (ko) |
EP (2) | EP2468906B1 (ko) |
JP (2) | JP4409572B2 (ko) |
KR (2) | KR101021488B1 (ko) |
CN (1) | CN100567535C (ko) |
TW (1) | TWI264480B (ko) |
WO (1) | WO2005083138A1 (ko) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4376487B2 (ja) * | 2002-01-18 | 2009-12-02 | 日鉱金属株式会社 | 高純度ニッケル合金ターゲットの製造方法 |
JP4466902B2 (ja) * | 2003-01-10 | 2010-05-26 | 日鉱金属株式会社 | ニッケル合金スパッタリングターゲット |
CN101186979B (zh) * | 2003-10-07 | 2012-06-13 | Jx日矿日石金属株式会社 | 高纯度Ni-V合金的制造方法 |
WO2005041290A1 (ja) * | 2003-10-24 | 2005-05-06 | Nikko Materials Co., Ltd. | ニッケル合金スパッタリングターゲット及びニッケル合金薄膜 |
CN100567535C (zh) * | 2004-03-01 | 2009-12-09 | 日矿金属株式会社 | Ni-Pt合金和Ni-Pt合金靶 |
US20090028744A1 (en) * | 2007-07-23 | 2009-01-29 | Heraeus, Inc. | Ultra-high purity NiPt alloys and sputtering targets comprising same |
JP5301530B2 (ja) * | 2008-03-28 | 2013-09-25 | Jx日鉱日石金属株式会社 | 磁性材ターゲット用白金粉末、同粉末の製造方法、白金焼結体からなる磁性材ターゲットの製造方法及び同焼結磁性材ターゲット |
US20100154867A1 (en) | 2008-12-19 | 2010-06-24 | E. I. Du Pont De Nemours And Company | Mechanically reliable solar cell modules |
JP2009167530A (ja) * | 2009-02-10 | 2009-07-30 | Nippon Mining & Metals Co Ltd | ニッケル合金スパッタリングターゲット及びニッケルシリサイド膜 |
KR101032011B1 (ko) | 2009-02-10 | 2011-05-02 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 니켈 합금 스퍼터링 타겟 및 니켈실리사이드막 |
TWI502092B (zh) * | 2010-03-19 | 2015-10-01 | Jx Nippon Mining & Metals Corp | Nickel alloy sputtering target, Ni alloy film and silicon nitride film |
JP5226155B2 (ja) | 2010-08-31 | 2013-07-03 | Jx日鉱日石金属株式会社 | Fe−Pt系強磁性材スパッタリングターゲット |
US8968537B2 (en) * | 2011-02-09 | 2015-03-03 | Applied Materials, Inc. | PVD sputtering target with a protected backing plate |
JP6340621B2 (ja) * | 2013-07-26 | 2018-06-13 | 三菱マテリアル株式会社 | Niスパッタリングターゲット及びその製造方法 |
CN104726829A (zh) * | 2013-12-18 | 2015-06-24 | 有研亿金新材料股份有限公司 | 一种高纯NiPt合金靶材及其制备方法 |
EP3106540B1 (en) | 2014-03-27 | 2018-04-25 | JX Nippon Mining & Metals Corp. | Method of producing a ni-p alloy or a ni-pt-p alloy sputtering target |
CN104018128B (zh) * | 2014-05-29 | 2016-08-24 | 贵研铂业股份有限公司 | 一种镍铂合金溅射靶材及其制备方法 |
US20170198582A1 (en) | 2014-05-30 | 2017-07-13 | National Oilwell Varco, L.P. | Well site pump with integrated driver and hydraulic motor and method of using same |
KR102012118B1 (ko) | 2015-06-26 | 2019-08-19 | 고쿠리츠다이가쿠호진 토쿄고교 다이가꾸 | 반도체 디바이스 전극용의 실리사이드 합금막 및 실리사이드 합금막의 제조 방법 |
CN106282639B (zh) * | 2016-09-19 | 2018-02-16 | 中材科技股份有限公司 | 一种铂镍合金溅射靶材及其制备方法 |
CN111304608B (zh) * | 2020-03-17 | 2021-10-15 | 贵研铂业股份有限公司 | 一种晶粒高定向取向的镍铂合金溅射靶材及其制备方法 |
CN113881920A (zh) * | 2020-07-03 | 2022-01-04 | 光洋应用材料科技股份有限公司 | 镍铂合金靶材及其制法 |
CN112853131B (zh) * | 2020-12-30 | 2022-07-19 | 有研亿金新材料有限公司 | 一种高纯度低气体含量镍铂合金的制备方法 |
IT202100003281A1 (it) | 2021-02-15 | 2022-08-15 | Bluclad S P A | Lega pt-ni elettrodepositata anallergica e relativi bagno e ciclo galvanico |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2269497A (en) * | 1940-08-26 | 1942-01-13 | Owens Corning Flberglas Corp | Nickel-platinum alloy |
JPS6333563A (ja) | 1986-07-25 | 1988-02-13 | Tanaka Kikinzoku Kogyo Kk | スパツタリング用Pt−Ni合金タ−ゲツトの製造方法 |
GB2242203A (en) | 1990-03-21 | 1991-09-25 | Johnson Matthey Plc | Catalyst material comprising platinum alloy supported on carbon |
US5188713A (en) * | 1991-03-05 | 1993-02-23 | Envirochip Technologies Ltd. | Process for recovery of metal |
JPH0543921A (ja) * | 1991-08-12 | 1993-02-23 | Murata Mfg Co Ltd | ニツケル微粉末の製造方法 |
US5282946A (en) * | 1991-08-30 | 1994-02-01 | Mitsubishi Materials Corporation | Platinum-cobalt alloy sputtering target and method for manufacturing same |
US6569270B2 (en) * | 1997-07-11 | 2003-05-27 | Honeywell International Inc. | Process for producing a metal article |
JPH11152592A (ja) * | 1997-11-18 | 1999-06-08 | Japan Energy Corp | 高純度ニッケルの製造方法及び薄膜形成用高純度ニッケル材料 |
JPH11335821A (ja) | 1998-05-20 | 1999-12-07 | Japan Energy Corp | 磁性薄膜形成用Ni−Fe合金スパッタリングターゲット、磁性薄膜および磁性薄膜形成用Ni−Fe合金スパッタリングターゲットの製造方法 |
SG97821A1 (en) * | 1999-11-17 | 2003-08-20 | Inst Materials Research & Eng | A method of fabricating semiconductor structures and a semiconductor structure formed thereby |
US20020139457A1 (en) * | 2001-04-02 | 2002-10-03 | Coppola Vito A. | Method of suppressing the oxidation characteristics of nickel |
CN1715454A (zh) | 2001-08-01 | 2006-01-04 | 株式会社日矿材料 | 高纯镍、由其构成的溅射靶及通过该靶形成的高纯镍薄膜 |
JP2003213405A (ja) * | 2002-01-18 | 2003-07-30 | Nikko Materials Co Ltd | 高純度ニッケル又はニッケル合金ターゲット及びその製造方法 |
JP4376487B2 (ja) * | 2002-01-18 | 2009-12-02 | 日鉱金属株式会社 | 高純度ニッケル合金ターゲットの製造方法 |
JP2003213407A (ja) | 2002-01-24 | 2003-07-30 | Nikko Materials Co Ltd | 高純度ニッケル又はニッケル合金スパッタリングターゲット及びその製造方法 |
US6845542B2 (en) * | 2002-08-27 | 2005-01-25 | The Research Foundation Of State University Of New York | Portable, fully contained and disposable suction device |
JP4466902B2 (ja) * | 2003-01-10 | 2010-05-26 | 日鉱金属株式会社 | ニッケル合金スパッタリングターゲット |
CN101186979B (zh) | 2003-10-07 | 2012-06-13 | Jx日矿日石金属株式会社 | 高纯度Ni-V合金的制造方法 |
WO2005041290A1 (ja) | 2003-10-24 | 2005-05-06 | Nikko Materials Co., Ltd. | ニッケル合金スパッタリングターゲット及びニッケル合金薄膜 |
CN100567535C (zh) | 2004-03-01 | 2009-12-09 | 日矿金属株式会社 | Ni-Pt合金和Ni-Pt合金靶 |
-
2005
- 2005-02-08 CN CNB2005800065132A patent/CN100567535C/zh active Active
- 2005-02-08 KR KR1020097019099A patent/KR101021488B1/ko active IP Right Grant
- 2005-02-08 US US10/596,671 patent/US20070098590A1/en not_active Abandoned
- 2005-02-08 WO PCT/JP2005/001813 patent/WO2005083138A1/ja active Application Filing
- 2005-02-08 KR KR1020067019867A patent/KR100925691B1/ko active IP Right Grant
- 2005-02-08 JP JP2006510388A patent/JP4409572B2/ja active Active
- 2005-02-08 EP EP11188413.6A patent/EP2468906B1/en active Active
- 2005-02-08 EP EP05709865A patent/EP1721997B1/en active Active
- 2005-02-21 TW TW094105007A patent/TWI264480B/zh active
-
2009
- 2009-10-09 JP JP2009235184A patent/JP5113134B2/ja active Active
-
2010
- 2010-11-30 US US12/957,013 patent/US7959782B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JPWO2005083138A1 (ja) | 2007-11-22 |
CN1926254A (zh) | 2007-03-07 |
TW200530429A (en) | 2005-09-16 |
KR20090101393A (ko) | 2009-09-25 |
KR101021488B1 (ko) | 2011-03-16 |
US20070098590A1 (en) | 2007-05-03 |
WO2005083138A1 (ja) | 2005-09-09 |
EP1721997B1 (en) | 2012-03-28 |
EP2468906A1 (en) | 2012-06-27 |
EP1721997A1 (en) | 2006-11-15 |
JP5113134B2 (ja) | 2013-01-09 |
KR100925691B1 (ko) | 2009-11-10 |
JP4409572B2 (ja) | 2010-02-03 |
US7959782B2 (en) | 2011-06-14 |
TWI264480B (en) | 2006-10-21 |
EP2468906B1 (en) | 2014-07-23 |
EP1721997A4 (en) | 2009-11-11 |
US20110068014A1 (en) | 2011-03-24 |
CN100567535C (zh) | 2009-12-09 |
JP2010047843A (ja) | 2010-03-04 |
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