KR20060114384A - 니켈-플라티늄 합금 및 동(同) 합금 타겟트 - Google Patents
니켈-플라티늄 합금 및 동(同) 합금 타겟트 Download PDFInfo
- Publication number
- KR20060114384A KR20060114384A KR1020067019867A KR20067019867A KR20060114384A KR 20060114384 A KR20060114384 A KR 20060114384A KR 1020067019867 A KR1020067019867 A KR 1020067019867A KR 20067019867 A KR20067019867 A KR 20067019867A KR 20060114384 A KR20060114384 A KR 20060114384A
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- South Korea
- Prior art keywords
- alloy
- target
- purity
- high purity
- solution
- Prior art date
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- 229910001260 Pt alloy Inorganic materials 0.000 title claims abstract description 48
- 239000000956 alloy Substances 0.000 title description 6
- 229910045601 alloy Inorganic materials 0.000 title description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000000843 powder Substances 0.000 claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 239000002994 raw material Substances 0.000 claims abstract description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 10
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000012535 impurity Substances 0.000 claims abstract description 7
- 238000002386 leaching Methods 0.000 claims abstract description 6
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 5
- 239000001569 carbon dioxide Substances 0.000 claims abstract description 5
- 229910002092 carbon dioxide Inorganic materials 0.000 claims abstract description 5
- 229910000008 nickel(II) carbonate Inorganic materials 0.000 claims abstract description 5
- ZULUUIKRFGGGTL-UHFFFAOYSA-L nickel(ii) carbonate Chemical compound [Ni+2].[O-]C([O-])=O ZULUUIKRFGGGTL-UHFFFAOYSA-L 0.000 claims abstract description 5
- 239000002253 acid Substances 0.000 claims abstract description 4
- 238000001914 filtration Methods 0.000 claims abstract description 3
- 230000003472 neutralizing effect Effects 0.000 claims abstract description 3
- 238000007664 blowing Methods 0.000 claims abstract 2
- 238000005096 rolling process Methods 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000004090 dissolution Methods 0.000 abstract description 2
- 238000005868 electrolysis reaction Methods 0.000 abstract 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 27
- 238000005336 cracking Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 4
- 238000005266 casting Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000004070 electrodeposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005097 cold rolling Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004663 powder metallurgy Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009770 conventional sintering Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25C1/00—Electrolytic production, recovery or refining of metals by electrolysis of solutions
- C25C1/20—Electrolytic production, recovery or refining of metals by electrolysis of solutions of noble metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
Abstract
Description
Claims (8)
- Pt 함유량이 0.1~20wt%인 Ni-Pt 합금으로서, 비커스 경도가 40~90인 것을 특징으로 하는 가공성이 우수한 Ni-Pt 합금.
- 제1항에 있어서, 99.99% 이상의 순도를 가지는 것을 특징으로 하는 Ni-Pt 합금.
- 3N 레벨의 원료 Ni를 전기화학적으로 용해하는 공정, 이 전해 침출한 용액을 암모니아로 중화하는 공정, 중화한 용액을 활성탄을 사용하여 여과하여 불순물을 제거하는 공정, 탄산가스를 취입하여 탄산 니켈로 하여, 환원성 분위기에서 고순도 Ni 분말을 제조하는 공정, 한편 3N 레벨의 원료 Pt를 산으로 침출하는 공정, 침출한 용액을 전해에 의해 고순도 전석 Pt를 제조하는 공정으로 이루어지며, 이들의 제조된 고순도 Ni 분말과 고순도 전석 Pt를 용해하는 공정으로 이루어지는 것을 특징으로 하는 가공성이 우수한 Ni-Pt 합금의 제조방법.
- 제3항에 있어서, 99.99% 이상의 순도를 가지는 것을 특징으로 하는 Ni-Pt 합금의 제조방법.
- 제3항 또는 제4항에 있어서, Pt함유량이 0.1~20wt%인 Ni-Pt 합금으로서, 비커스 경도가 40~90인 것을 특징으로 하는 가공성이 우수한 Ni-Pt 합금의 제조방법.
- 제3항 내지 제5항 중 어느 한 항의 공정에 의해 제조한 용해 후의 Ni-Pt 합금 잉고트를 압연하는 것을 특징으로 하는 Ni-Pt 합금 타겟트의 제조방법.
- Pt 함유량이 0.1~20wt%인 Ni-Pt 합금으로서, 비커스 경도가 40~90인 것을 특징으로 하는 가공성이 우수한 Ni-Pt 합금 타겟트.
- 제7항에 있어서, 99.99% 이상의 순도를 가지는 것을 특징으로 하는 Ni-Pt 합금 타겟트.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004056097 | 2004-03-01 | ||
JPJP-P-2004-00056097 | 2004-03-01 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020097019099A Division KR101021488B1 (ko) | 2004-03-01 | 2005-02-08 | 니켈-플라티늄 합금 및 동(同) 합금 타겟트 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060114384A true KR20060114384A (ko) | 2006-11-06 |
KR100925691B1 KR100925691B1 (ko) | 2009-11-10 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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KR1020067019867A KR100925691B1 (ko) | 2004-03-01 | 2005-02-08 | 니켈-플라티늄 합금 및 동(同) 합금 타겟트 |
KR1020097019099A KR101021488B1 (ko) | 2004-03-01 | 2005-02-08 | 니켈-플라티늄 합금 및 동(同) 합금 타겟트 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020097019099A KR101021488B1 (ko) | 2004-03-01 | 2005-02-08 | 니켈-플라티늄 합금 및 동(同) 합금 타겟트 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20070098590A1 (ko) |
EP (2) | EP1721997B1 (ko) |
JP (2) | JP4409572B2 (ko) |
KR (2) | KR100925691B1 (ko) |
CN (1) | CN100567535C (ko) |
TW (1) | TWI264480B (ko) |
WO (1) | WO2005083138A1 (ko) |
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JP4376487B2 (ja) * | 2002-01-18 | 2009-12-02 | 日鉱金属株式会社 | 高純度ニッケル合金ターゲットの製造方法 |
JP4466902B2 (ja) * | 2003-01-10 | 2010-05-26 | 日鉱金属株式会社 | ニッケル合金スパッタリングターゲット |
US8871144B2 (en) * | 2003-10-07 | 2014-10-28 | Jx Nippon Mining & Metals Corporation | High-purity Ni-V alloy target therefrom high-purity Ni-V alloy thin film and process for producing high-purity Ni-V alloy |
WO2005041290A1 (ja) * | 2003-10-24 | 2005-05-06 | Nikko Materials Co., Ltd. | ニッケル合金スパッタリングターゲット及びニッケル合金薄膜 |
WO2005083138A1 (ja) * | 2004-03-01 | 2005-09-09 | Nippon Mining & Metals Co., Ltd. | Ni-Pt合金及び同合金ターゲット |
US20090028744A1 (en) * | 2007-07-23 | 2009-01-29 | Heraeus, Inc. | Ultra-high purity NiPt alloys and sputtering targets comprising same |
WO2009119196A1 (ja) * | 2008-03-28 | 2009-10-01 | 日鉱金属株式会社 | 磁性材ターゲット用白金粉末、同粉末の製造方法、白金焼結体からなる磁性材ターゲットの製造方法及び同焼結磁性材ターゲット |
US20100154867A1 (en) | 2008-12-19 | 2010-06-24 | E. I. Du Pont De Nemours And Company | Mechanically reliable solar cell modules |
JP2009167530A (ja) * | 2009-02-10 | 2009-07-30 | Nippon Mining & Metals Co Ltd | ニッケル合金スパッタリングターゲット及びニッケルシリサイド膜 |
KR101032011B1 (ko) | 2009-02-10 | 2011-05-02 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 니켈 합금 스퍼터링 타겟 및 니켈실리사이드막 |
US9249497B2 (en) | 2010-03-19 | 2016-02-02 | Jx Nippon Mining & Metals Corporation | Ni alloy sputtering target, Ni alloy thin film and Ni silicide film |
WO2012029498A1 (ja) | 2010-08-31 | 2012-03-08 | Jx日鉱日石金属株式会社 | Fe-Pt系強磁性材スパッタリングターゲット |
US8968537B2 (en) * | 2011-02-09 | 2015-03-03 | Applied Materials, Inc. | PVD sputtering target with a protected backing plate |
JP6340621B2 (ja) * | 2013-07-26 | 2018-06-13 | 三菱マテリアル株式会社 | Niスパッタリングターゲット及びその製造方法 |
CN104726829A (zh) * | 2013-12-18 | 2015-06-24 | 有研亿金新材料股份有限公司 | 一种高纯NiPt合金靶材及其制备方法 |
WO2015146604A1 (ja) | 2014-03-27 | 2015-10-01 | Jx日鉱日石金属株式会社 | Ni-P合金又はNi-Pt-P合金からなるスパッタリングターゲット及びその製造方法 |
CN104018128B (zh) * | 2014-05-29 | 2016-08-24 | 贵研铂业股份有限公司 | 一种镍铂合金溅射靶材及其制备方法 |
EP3149333A1 (en) | 2014-05-30 | 2017-04-05 | National Oilwell Varco, L.P. | Wellsite pump with integrated driver and hydraulic motor and method of using same |
WO2016208704A1 (ja) | 2015-06-26 | 2016-12-29 | 国立大学法人東京工業大学 | 半導体デバイス電極用のシリサイド合金膜及びシリサイド合金膜の製造方法 |
CN106282639B (zh) * | 2016-09-19 | 2018-02-16 | 中材科技股份有限公司 | 一种铂镍合金溅射靶材及其制备方法 |
CN111304608B (zh) * | 2020-03-17 | 2021-10-15 | 贵研铂业股份有限公司 | 一种晶粒高定向取向的镍铂合金溅射靶材及其制备方法 |
CN113881920A (zh) * | 2020-07-03 | 2022-01-04 | 光洋应用材料科技股份有限公司 | 镍铂合金靶材及其制法 |
CN112853131B (zh) * | 2020-12-30 | 2022-07-19 | 有研亿金新材料有限公司 | 一种高纯度低气体含量镍铂合金的制备方法 |
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US5188713A (en) * | 1991-03-05 | 1993-02-23 | Envirochip Technologies Ltd. | Process for recovery of metal |
JPH0543921A (ja) * | 1991-08-12 | 1993-02-23 | Murata Mfg Co Ltd | ニツケル微粉末の製造方法 |
US5282946A (en) * | 1991-08-30 | 1994-02-01 | Mitsubishi Materials Corporation | Platinum-cobalt alloy sputtering target and method for manufacturing same |
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JP4376487B2 (ja) * | 2002-01-18 | 2009-12-02 | 日鉱金属株式会社 | 高純度ニッケル合金ターゲットの製造方法 |
JP2003213405A (ja) * | 2002-01-18 | 2003-07-30 | Nikko Materials Co Ltd | 高純度ニッケル又はニッケル合金ターゲット及びその製造方法 |
JP2003213407A (ja) * | 2002-01-24 | 2003-07-30 | Nikko Materials Co Ltd | 高純度ニッケル又はニッケル合金スパッタリングターゲット及びその製造方法 |
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JP4466902B2 (ja) * | 2003-01-10 | 2010-05-26 | 日鉱金属株式会社 | ニッケル合金スパッタリングターゲット |
US8871144B2 (en) * | 2003-10-07 | 2014-10-28 | Jx Nippon Mining & Metals Corporation | High-purity Ni-V alloy target therefrom high-purity Ni-V alloy thin film and process for producing high-purity Ni-V alloy |
WO2005041290A1 (ja) * | 2003-10-24 | 2005-05-06 | Nikko Materials Co., Ltd. | ニッケル合金スパッタリングターゲット及びニッケル合金薄膜 |
WO2005083138A1 (ja) * | 2004-03-01 | 2005-09-09 | Nippon Mining & Metals Co., Ltd. | Ni-Pt合金及び同合金ターゲット |
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2005
- 2005-02-08 WO PCT/JP2005/001813 patent/WO2005083138A1/ja active Application Filing
- 2005-02-08 EP EP05709865A patent/EP1721997B1/en active Active
- 2005-02-08 US US10/596,671 patent/US20070098590A1/en not_active Abandoned
- 2005-02-08 EP EP11188413.6A patent/EP2468906B1/en active Active
- 2005-02-08 KR KR1020067019867A patent/KR100925691B1/ko active IP Right Grant
- 2005-02-08 KR KR1020097019099A patent/KR101021488B1/ko active IP Right Grant
- 2005-02-08 CN CNB2005800065132A patent/CN100567535C/zh active Active
- 2005-02-08 JP JP2006510388A patent/JP4409572B2/ja active Active
- 2005-02-21 TW TW094105007A patent/TWI264480B/zh active
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2009
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Publication number | Publication date |
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JP4409572B2 (ja) | 2010-02-03 |
TWI264480B (en) | 2006-10-21 |
JP5113134B2 (ja) | 2013-01-09 |
EP1721997A4 (en) | 2009-11-11 |
EP2468906A1 (en) | 2012-06-27 |
EP2468906B1 (en) | 2014-07-23 |
KR20090101393A (ko) | 2009-09-25 |
CN1926254A (zh) | 2007-03-07 |
TW200530429A (en) | 2005-09-16 |
CN100567535C (zh) | 2009-12-09 |
US20110068014A1 (en) | 2011-03-24 |
EP1721997A1 (en) | 2006-11-15 |
KR100925691B1 (ko) | 2009-11-10 |
JPWO2005083138A1 (ja) | 2007-11-22 |
US20070098590A1 (en) | 2007-05-03 |
EP1721997B1 (en) | 2012-03-28 |
WO2005083138A1 (ja) | 2005-09-09 |
JP2010047843A (ja) | 2010-03-04 |
US7959782B2 (en) | 2011-06-14 |
KR101021488B1 (ko) | 2011-03-16 |
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