US20070098590A1 - Ni-pt alloy and target comprising the alloy - Google Patents

Ni-pt alloy and target comprising the alloy Download PDF

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Publication number
US20070098590A1
US20070098590A1 US10/596,671 US59667105A US2007098590A1 US 20070098590 A1 US20070098590 A1 US 20070098590A1 US 59667105 A US59667105 A US 59667105A US 2007098590 A1 US2007098590 A1 US 2007098590A1
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US
United States
Prior art keywords
alloy
high purity
purity
target
powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/596,671
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English (en)
Inventor
Yuichiro Shindo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JX Nippon Mining and Metals Corp
Nippon Mining Holdings Inc
Original Assignee
Nikko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikko Materials Co Ltd filed Critical Nikko Materials Co Ltd
Assigned to NIKKO MATERIALS CO., LTD. reassignment NIKKO MATERIALS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SHINDO, YUICHIRO
Assigned to NIPPON MINING & METALS CO., LTD. reassignment NIPPON MINING & METALS CO., LTD. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: NIKKO MATERIALS CO., LTD.
Publication of US20070098590A1 publication Critical patent/US20070098590A1/en
Assigned to NIPPON MINING HOLDINGS, INC. reassignment NIPPON MINING HOLDINGS, INC. MERGER (SEE DOCUMENT FOR DETAILS). Assignors: NIPPON MINING & METALS CO., LTD.
Assigned to JX NIPPON MINING & METALS CORPORATION reassignment JX NIPPON MINING & METALS CORPORATION CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: NIPPON MINING HOLDINGS, INC.
Priority to US12/957,013 priority Critical patent/US7959782B2/en
Abandoned legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/03—Alloys based on nickel or cobalt based on nickel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/16—Making metallic powder or suspensions thereof using chemical processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/16—Making metallic powder or suspensions thereof using chemical processes
    • B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
    • B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
    • C25C1/00—Electrolytic production, recovery or refining of metals by electrolysis of solutions
    • C25C1/20—Electrolytic production, recovery or refining of metals by electrolysis of solutions of noble metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN

Definitions

  • the present invention relates to a Ni—Pt alloy superior in workability, a sputtering target manufacturing by rolling a Ni—Pt alloy ingot, and a manufacturing method of such Ni—Pt alloy and Ni—Pt alloy target.
  • Ni—Pt is used as a sputtering target for semiconductor devices, and this Ni—Pt target was conventionally manufactured with the powder metallurgy process. In other words, the target was manufactured by sintering Ni powder and Pt powder, or by sintering Ni—Pt alloy powder.
  • gas components easily get mixed into the target, and not only does this reduce purity, it causes abnormal electrical discharge during sputtering, induces the generation of particles, and deteriorates the deposition characteristics.
  • a Ni—Pt product formed via melting and casting has a problem in that it is extremely hard and brittle.
  • a Ni—Pt ingot is rolled, there is a problem in that grain boundary fractures occur, and it is not possible to manufacture a flat and even planar target. This is the reason targets were manufactured with the powder metallurgy process as described above.
  • Patent Document 1 considered the cause of fractures to be the coarsened crystal grains in the target and, in order to obtain fine crystal grains, attempted to inhibit the coarsening of crystals by preparing a mold with large heat capacity or a water-cooled mold, and performing rapid quenching by inhibiting the temperature rise of the mold.
  • Patent Document 1 there is a drawback in that large equipment is necessary for preparing a mold with large heat capacity or a water-cooled mold, and there is a problem in that it is difficult to inhibit the coarsening of crystals unless the cooling speed is considerably fast.
  • An object of the present invention is to provide technology capable of rolling a Ni—Pt alloy ingot upon reducing the hardness thereof, and manufacturing a rolled target stably and efficiently.
  • the present inventors discovered that by increasing the purity of the Ni—Pt alloy, it is possible to significantly reduce the hardness of the Ni—Pt alloy ingot.
  • the present invention provides 1) a Ni—Pt alloy superior in workability containing Pt in a content of 0.1 to 20 wt % and having a Vickers hardness of 40 to 90, and a target comprising the Ni—Pt alloy, and 2) the Ni—Pt alloy and Ni—Pt alloy target according to 1) above having a purity of 99.99% or higher.
  • the present invention also provides 3) a manufacturing method of Ni—Pt alloy superior in workability comprising a step of subjecting a raw material Ni having a purity of 3N level to electrochemical dissolution, a step of neutralizing the electrolytically leached solution with ammonia, a step of removing impurities by filtering the neutralized solution with activated carbon, a step of blowing carbon dioxide into the resultant solution to form nickel carbonate and exposing the resultant product to a reducing atmosphere to prepare high purity Ni powder, a step of leaching a raw material Pt having a purity of 3N level with acid, a step of subjecting the leached solution to electrolysis to prepare high purity electrodeposited Pt, and a step of dissolving the resultant high purity Ni powder and high purity electrodeposited Pt, 4) the manufacturing method of Ni—Pt alloy according to 3) above wherein the Ni—Pt alloy has a purity of 99.99% or higher, and 5) the manufacturing method of Ni—Pt alloy superior in workability according to 3) or 4)
  • the present invention also provides 6) the manufacturing method of a Ni—Pt alloy target, wherein the dissolved Ni—Pt alloy ingot manufactured based on any one of the methods according to 3) to 5) above.
  • the present invention is able to easily perform cool rolling to a dissolved Ni—Pt alloy ingot without requiring any equipment, such as preparing a mold with large heat capacity or a water-cooled mold, for accelerating the cooling speed in order to inhibit the coarsening of crystals, and yields a superior effect in that it is possible to improve the quality of the Ni—Pt alloy deposition by reducing impurities contained in the Ni—Pt alloy target and realizing high purification.
  • the present invention can be applied to a Ni—Pt alloy containing Pt in a content of 0.1 to 20 wt %.
  • This component composition is required in the deposition of a Ni—Pt alloy material of semiconductor devices, and is also a composition range of the Ni—Pt alloy or target of the present invention capable of reducing the hardness.
  • the Vickers hardness obtained by the Ni—Pt alloy of the present invention is 40 to 90.
  • the Vickers hardness is within the range of 40 to 90, and is within a range where cold rolling can be performed. This is a significant feature of the present invention.
  • the Pt content is set to be 0.1 to 20 wt %.
  • the Ni—Pt alloy and Ni—Pt alloy target of the present invention have a purity of 99.99% or higher.
  • the Vickers hardness is within the range of 40 to 90, and is within a range where cold rolling can be performed.
  • Ni—Pt alloy superior in workability is explained; as for a Ni raw material, foremost, a raw material Ni having a purity of 3N level is subject to electrochemical dissolution, the electrolytically leached solution is thereafter neutralized with ammonia, and the neutralized solution is filtered with activated carbon to remove impurities.
  • Pt raw material a raw material Pt having a purity of 3N level is leached with acid, and this leached solution is subject to electrolysis to manufacture high purity electrodeposited Pt.
  • the obtained Ni—Pt alloy has a purity of 99.99% (4N) or higher.
  • Ni—Pt alloy ingot obtained via melting and casting as described above has a Pt content of 0.1 to 20 wt % and a Vickers hardness of 40 to 90. Also as described above, this ingot is superior in workability.
  • the high purity Ni powder and high purity electrodeposited Pt obtained as described above were dissolved under a vacuum where the degree of vacuum was 10 ⁇ 4 Torr to obtain high purity Ni-20% Pt alloy.
  • the hardness of this alloy was Hv 80. This alloy was rolled at room temperature to obtain a target.
  • Example 2 As with Example 1, high purity Ni-10% Pt alloy was prepared. The hardness of this alloy was Hv 65. This alloy was rolled at room temperature to obtain a target. There were no generation of cracks or fractures in the target, and rolling could be performed easily. The results are shown in Table 2. TABLE 2 (wtppm) Example 2 Example 3 Example 4 Fe 2.0 1.9 1.8 Cr 0.6 0.6 Co 0.5 0.5 0.5 Cu 0.1 0.1 0.1 Al 0.1 0.1 0.1 O 20 20 20 C 10 10 10 N ⁇ 10 ⁇ 10 ⁇ 10 Hardness 45 55 65 Plastic Workability at Excellent Excellent Excellent Room Temperature
  • the present invention yields a superior effect in that it is easy to perform cold rolling to a dissolved Ni—Pt alloy ingot, and is capable of simultaneously reducing the impurities contained in the Ni—Pt alloy target to realize high purification. As a result, it is possible to improve the quality of Ni—Pt alloy deposition.
US10/596,671 2004-03-01 2005-02-08 Ni-pt alloy and target comprising the alloy Abandoned US20070098590A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/957,013 US7959782B2 (en) 2004-03-01 2010-11-30 Method of manufacturing a Ni-Pt alloy

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004-056097 2004-03-01
JP2004056097 2004-03-01
PCT/JP2005/001813 WO2005083138A1 (ja) 2004-03-01 2005-02-08 Ni-Pt合金及び同合金ターゲット

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2005/001813 A-371-Of-International WO2005083138A1 (ja) 2004-03-01 2005-02-08 Ni-Pt合金及び同合金ターゲット

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/957,013 Division US7959782B2 (en) 2004-03-01 2010-11-30 Method of manufacturing a Ni-Pt alloy

Publications (1)

Publication Number Publication Date
US20070098590A1 true US20070098590A1 (en) 2007-05-03

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US10/596,671 Abandoned US20070098590A1 (en) 2004-03-01 2005-02-08 Ni-pt alloy and target comprising the alloy
US12/957,013 Active US7959782B2 (en) 2004-03-01 2010-11-30 Method of manufacturing a Ni-Pt alloy

Family Applications After (1)

Application Number Title Priority Date Filing Date
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Country Status (7)

Country Link
US (2) US20070098590A1 (zh)
EP (2) EP2468906B1 (zh)
JP (2) JP4409572B2 (zh)
KR (2) KR101021488B1 (zh)
CN (1) CN100567535C (zh)
TW (1) TWI264480B (zh)
WO (1) WO2005083138A1 (zh)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040256035A1 (en) * 2002-01-18 2004-12-23 Yasuhiro Yamakoshi Target of high-purity nickel or nickel alloy and its producing method
US20060037680A1 (en) * 2003-01-10 2006-02-23 Nikko Materials Co., Ltd Nickel alloy sputtering target
US20060292028A1 (en) * 2003-10-07 2006-12-28 Nikko Materials Co., Ltd. High-purity ni-v alloy target therefrom high-purity ni-v alloy thin film and process for producing high-purity ni-v alloy
US20070074790A1 (en) * 2003-10-24 2007-04-05 Nikko Materials Co., Ltd. Nickel alloy sputtering target and nickel alloy thin film
US20090028744A1 (en) * 2007-07-23 2009-01-29 Heraeus, Inc. Ultra-high purity NiPt alloys and sputtering targets comprising same
WO2010080469A2 (en) 2008-12-19 2010-07-15 E. I. Du Pont De Nemours And Company Mechanically reliable solar cell modules
US20110068014A1 (en) * 2004-03-01 2011-03-24 Jx Nippon Mining & Metals Corporation Ni-Pt Alloy and Target Comprising the Same
US20110135942A1 (en) * 2009-02-10 2011-06-09 Jx Nippon Mining & Metals Corporation Nickel Alloy Sputtering Target and Nickel Silicide Film
US9249497B2 (en) 2010-03-19 2016-02-02 Jx Nippon Mining & Metals Corporation Ni alloy sputtering target, Ni alloy thin film and Ni silicide film
US9328412B2 (en) 2010-08-31 2016-05-03 Jx Nippon Mining & Metals Corporation Fe—Pt-based ferromagnetic material sputtering target
US10337100B2 (en) 2014-03-27 2019-07-02 Jx Nippon Mining & Metals Corporation Sputtering target comprising Ni—P alloy or Ni—Pt—P alloy and production method therefor
CN113881920A (zh) * 2020-07-03 2022-01-04 光洋应用材料科技股份有限公司 镍铂合金靶材及其制法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5301530B2 (ja) * 2008-03-28 2013-09-25 Ｊｘ日鉱日石金属株式会社 磁性材ターゲット用白金粉末、同粉末の製造方法、白金焼結体からなる磁性材ターゲットの製造方法及び同焼結磁性材ターゲット
KR101032011B1 (ko) 2009-02-10 2011-05-02 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 니켈 합금 스퍼터링 타겟 및 니켈실리사이드막
US8968537B2 (en) * 2011-02-09 2015-03-03 Applied Materials, Inc. PVD sputtering target with a protected backing plate
JP6340621B2 (ja) * 2013-07-26 2018-06-13 三菱マテリアル株式会社 Ｎｉスパッタリングターゲット及びその製造方法
CN104726829A (zh) * 2013-12-18 2015-06-24 有研亿金新材料股份有限公司 一种高纯NiPt合金靶材及其制备方法
CN104018128B (zh) * 2014-05-29 2016-08-24 贵研铂业股份有限公司 一种镍铂合金溅射靶材及其制备方法
US20170198582A1 (en) 2014-05-30 2017-07-13 National Oilwell Varco, L.P. Well site pump with integrated driver and hydraulic motor and method of using same
KR102012118B1 (ko) 2015-06-26 2019-08-19 고쿠리츠다이가쿠호진 토쿄고교 다이가꾸 반도체 디바이스 전극용의 실리사이드 합금막 및 실리사이드 합금막의 제조 방법
CN106282639B (zh) * 2016-09-19 2018-02-16 中材科技股份有限公司 一种铂镍合金溅射靶材及其制备方法
CN111304608B (zh) * 2020-03-17 2021-10-15 贵研铂业股份有限公司 一种晶粒高定向取向的镍铂合金溅射靶材及其制备方法
CN112853131B (zh) * 2020-12-30 2022-07-19 有研亿金新材料有限公司 一种高纯度低气体含量镍铂合金的制备方法
IT202100003281A1 (it) 2021-02-15 2022-08-15 Bluclad S P A Lega pt-ni elettrodepositata anallergica e relativi bagno e ciclo galvanico

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2269497A (en) * 1940-08-26 1942-01-13 Owens Corning Flberglas Corp Nickel-platinum alloy
US5188713A (en) * 1991-03-05 1993-02-23 Envirochip Technologies Ltd. Process for recovery of metal
US5282946A (en) * 1991-08-30 1994-02-01 Mitsubishi Materials Corporation Platinum-cobalt alloy sputtering target and method for manufacturing same
US6238494B1 (en) * 1997-07-11 2001-05-29 Johnson Matthey Electronics Inc. Polycrystalline, metallic sputtering target
US6531396B1 (en) * 1999-11-17 2003-03-11 Institute Of Materials Research And Engineering Method of fabricating a nickel/platinum monsilicide film
US20040256035A1 (en) * 2002-01-18 2004-12-23 Yasuhiro Yamakoshi Target of high-purity nickel or nickel alloy and its producing method
US20060037680A1 (en) * 2003-01-10 2006-02-23 Nikko Materials Co., Ltd Nickel alloy sputtering target

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6333563A (ja) 1986-07-25 1988-02-13 Tanaka Kikinzoku Kogyo Kk スパツタリング用Ｐｔ−Ｎｉ合金タ−ゲツトの製造方法
GB2242203A (en) 1990-03-21 1991-09-25 Johnson Matthey Plc Catalyst material comprising platinum alloy supported on carbon
JPH0543921A (ja) * 1991-08-12 1993-02-23 Murata Mfg Co Ltd ニツケル微粉末の製造方法
JPH11152592A (ja) * 1997-11-18 1999-06-08 Japan Energy Corp 高純度ニッケルの製造方法及び薄膜形成用高純度ニッケル材料
JPH11335821A (ja) 1998-05-20 1999-12-07 Japan Energy Corp 磁性薄膜形成用Ｎｉ−Ｆｅ合金スパッタリングターゲット、磁性薄膜および磁性薄膜形成用Ｎｉ−Ｆｅ合金スパッタリングターゲットの製造方法
US20020139457A1 (en) * 2001-04-02 2002-10-03 Coppola Vito A. Method of suppressing the oxidation characteristics of nickel
CN1715454A (zh) 2001-08-01 2006-01-04 株式会社日矿材料 高纯镍、由其构成的溅射靶及通过该靶形成的高纯镍薄膜
JP2003213405A (ja) * 2002-01-18 2003-07-30 Nikko Materials Co Ltd 高純度ニッケル又はニッケル合金ターゲット及びその製造方法
JP2003213407A (ja) 2002-01-24 2003-07-30 Nikko Materials Co Ltd 高純度ニッケル又はニッケル合金スパッタリングターゲット及びその製造方法
US6845542B2 (en) * 2002-08-27 2005-01-25 The Research Foundation Of State University Of New York Portable, fully contained and disposable suction device
CN101186979B (zh) 2003-10-07 2012-06-13 Jx日矿日石金属株式会社 高纯度Ni-V合金的制造方法
WO2005041290A1 (ja) 2003-10-24 2005-05-06 Nikko Materials Co., Ltd. ニッケル合金スパッタリングターゲット及びニッケル合金薄膜
CN100567535C (zh) 2004-03-01 2009-12-09 日矿金属株式会社 Ni-Pt合金和Ni-Pt合金靶

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2269497A (en) * 1940-08-26 1942-01-13 Owens Corning Flberglas Corp Nickel-platinum alloy
US5188713A (en) * 1991-03-05 1993-02-23 Envirochip Technologies Ltd. Process for recovery of metal
US5282946A (en) * 1991-08-30 1994-02-01 Mitsubishi Materials Corporation Platinum-cobalt alloy sputtering target and method for manufacturing same
US6238494B1 (en) * 1997-07-11 2001-05-29 Johnson Matthey Electronics Inc. Polycrystalline, metallic sputtering target
US6531396B1 (en) * 1999-11-17 2003-03-11 Institute Of Materials Research And Engineering Method of fabricating a nickel/platinum monsilicide film
US20040256035A1 (en) * 2002-01-18 2004-12-23 Yasuhiro Yamakoshi Target of high-purity nickel or nickel alloy and its producing method
US20060037680A1 (en) * 2003-01-10 2006-02-23 Nikko Materials Co., Ltd Nickel alloy sputtering target

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040256035A1 (en) * 2002-01-18 2004-12-23 Yasuhiro Yamakoshi Target of high-purity nickel or nickel alloy and its producing method
US20060137782A1 (en) * 2002-01-18 2006-06-29 Nikko Materials Co., Ltd. Target of high-purity nickel or nickel alloy and its producing method
US7740718B2 (en) 2002-01-18 2010-06-22 Nippon Mining & Metals Co., Ltd. Target of high-purity nickel or nickel alloy and its producing method
US7618505B2 (en) 2002-01-18 2009-11-17 Nippon Mining & Metals Co., Ltd. Target of high-purity nickel or nickel alloy and its producing method
US20060037680A1 (en) * 2003-01-10 2006-02-23 Nikko Materials Co., Ltd Nickel alloy sputtering target
US8871144B2 (en) 2003-10-07 2014-10-28 Jx Nippon Mining & Metals Corporation High-purity Ni-V alloy target therefrom high-purity Ni-V alloy thin film and process for producing high-purity Ni-V alloy
US20060292028A1 (en) * 2003-10-07 2006-12-28 Nikko Materials Co., Ltd. High-purity ni-v alloy target therefrom high-purity ni-v alloy thin film and process for producing high-purity ni-v alloy
US20100242674A1 (en) * 2003-10-07 2010-09-30 Nippon Mining And Metals Co., Ltd. High-Purity Ni-V Alloy, Target therefrom, High-Purity Ni-V Alloy Thin Film and Process for Producing High-Purity Ni-V Alloy
US7938918B2 (en) 2003-10-07 2011-05-10 Jx Nippon Mining & Metals Corporation High-purity Ni-V alloy, target therefrom, high-purity Ni-V alloy thin film and process for producing high-purity Ni-V alloy
US7605481B2 (en) 2003-10-24 2009-10-20 Nippon Mining & Metals Co., Ltd. Nickel alloy sputtering target and nickel alloy thin film
US20070074790A1 (en) * 2003-10-24 2007-04-05 Nikko Materials Co., Ltd. Nickel alloy sputtering target and nickel alloy thin film
US7959782B2 (en) 2004-03-01 2011-06-14 Jx Nippon Mining & Metals Corporation Method of manufacturing a Ni-Pt alloy
US20110068014A1 (en) * 2004-03-01 2011-03-24 Jx Nippon Mining & Metals Corporation Ni-Pt Alloy and Target Comprising the Same
US20090028744A1 (en) * 2007-07-23 2009-01-29 Heraeus, Inc. Ultra-high purity NiPt alloys and sputtering targets comprising same
WO2010080469A2 (en) 2008-12-19 2010-07-15 E. I. Du Pont De Nemours And Company Mechanically reliable solar cell modules
US20110135942A1 (en) * 2009-02-10 2011-06-09 Jx Nippon Mining & Metals Corporation Nickel Alloy Sputtering Target and Nickel Silicide Film
CN102165094A (zh) * 2009-02-10 2011-08-24 Jx日矿日石金属株式会社 镍合金溅射靶及镍硅化物膜
US8114341B2 (en) 2009-02-10 2012-02-14 Jx Nippon Mining & Metals Corporation Nickel alloy sputtering target and nickel silicide film
US9249497B2 (en) 2010-03-19 2016-02-02 Jx Nippon Mining & Metals Corporation Ni alloy sputtering target, Ni alloy thin film and Ni silicide film
US9328412B2 (en) 2010-08-31 2016-05-03 Jx Nippon Mining & Metals Corporation Fe—Pt-based ferromagnetic material sputtering target
US10337100B2 (en) 2014-03-27 2019-07-02 Jx Nippon Mining & Metals Corporation Sputtering target comprising Ni—P alloy or Ni—Pt—P alloy and production method therefor
CN113881920A (zh) * 2020-07-03 2022-01-04 光洋应用材料科技股份有限公司 镍铂合金靶材及其制法

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CN1926254A (zh) 2007-03-07
TW200530429A (en) 2005-09-16
KR20090101393A (ko) 2009-09-25
KR101021488B1 (ko) 2011-03-16
WO2005083138A1 (ja) 2005-09-09
EP1721997B1 (en) 2012-03-28
EP2468906A1 (en) 2012-06-27
EP1721997A1 (en) 2006-11-15
JP5113134B2 (ja) 2013-01-09
KR100925691B1 (ko) 2009-11-10
JP4409572B2 (ja) 2010-02-03
US7959782B2 (en) 2011-06-14
TWI264480B (en) 2006-10-21
EP2468906B1 (en) 2014-07-23
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US20110068014A1 (en) 2011-03-24
CN100567535C (zh) 2009-12-09
JP2010047843A (ja) 2010-03-04

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