CN1904132B - 溅射装置和溅射方法 - Google Patents

溅射装置和溅射方法 Download PDF

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Publication number
CN1904132B
CN1904132B CN2006101076272A CN200610107627A CN1904132B CN 1904132 B CN1904132 B CN 1904132B CN 2006101076272 A CN2006101076272 A CN 2006101076272A CN 200610107627 A CN200610107627 A CN 200610107627A CN 1904132 B CN1904132 B CN 1904132B
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China
Prior art keywords
targets
target
sputtering
parallel
substrate
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CN2006101076272A
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Chinese (zh)
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CN1904132A (zh
Inventor
小林大士
谷典明
小松孝
清田淳也
中村肇
新井真
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Ulvac Inc
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Ulvac Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
CN2006101076272A 2005-07-29 2006-07-28 溅射装置和溅射方法 Active CN1904132B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005220889A JP4922581B2 (ja) 2005-07-29 2005-07-29 スパッタリング装置及びスパッタリング方法
JP2005-220889 2005-07-29
JP2005220889 2005-07-29

Publications (2)

Publication Number Publication Date
CN1904132A CN1904132A (zh) 2007-01-31
CN1904132B true CN1904132B (zh) 2011-07-20

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ID=37673492

Family Applications (1)

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CN2006101076272A Active CN1904132B (zh) 2005-07-29 2006-07-28 溅射装置和溅射方法

Country Status (4)

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JP (1) JP4922581B2 (https=)
KR (1) KR101231668B1 (https=)
CN (1) CN1904132B (https=)
TW (1) TWI401333B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101083443B1 (ko) * 2007-03-01 2011-11-14 가부시키가이샤 알박 박막 형성 방법 및 박막 형성 장치
JP4707693B2 (ja) * 2007-05-01 2011-06-22 株式会社アルバック スパッタリング装置及びスパッタリング方法
JP2009024230A (ja) * 2007-07-20 2009-02-05 Kobe Steel Ltd スパッタリング装置
KR20100030676A (ko) * 2007-08-20 2010-03-18 가부시키가이샤 알박 스퍼터링 방법
WO2010090197A1 (ja) * 2009-02-04 2010-08-12 シャープ株式会社 透明導電膜形成体及びその製造方法
WO2011031056A2 (ko) * 2009-09-09 2011-03-17 주식회사 티엔텍 기판진동장치가 구비된 스퍼터링 시스템 및 그 제어방법
CN102312206B (zh) * 2010-06-29 2015-07-15 株式会社爱发科 溅射方法
JP5813874B2 (ja) * 2011-08-25 2015-11-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ スパッタリング装置およびスパッタリング方法
CN103014639B (zh) * 2012-12-12 2015-02-25 京东方科技集团股份有限公司 溅射靶材及溅射装置
CN104878356B (zh) * 2015-06-08 2017-11-24 光驰科技(上海)有限公司 一种磁控溅射靶材磁铁放置角度的确定方法
KR102580293B1 (ko) * 2016-01-05 2023-09-19 삼성디스플레이 주식회사 스퍼터링 장치
JP2020143356A (ja) * 2019-03-08 2020-09-10 株式会社アルバック スパッタリング装置及びスパッタリング方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1358881A (zh) * 2001-11-20 2002-07-17 中国科学院长春光学精密机械与物理研究所 真空多元溅射镀膜方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02258976A (ja) * 1988-09-26 1990-10-19 Tokuda Seisakusho Ltd スパッタ装置
JPH0364460A (ja) * 1989-07-31 1991-03-19 Hitachi Ltd 薄膜形成装置
JPH111770A (ja) * 1997-06-06 1999-01-06 Anelva Corp スパッタリング装置及びスパッタリング方法
TW399245B (en) * 1997-10-29 2000-07-21 Nec Corp Sputtering apparatus for sputtering high melting point metal and method for manufacturing semiconductor device having high melting point metal
US6093293A (en) 1997-12-17 2000-07-25 Balzers Hochvakuum Ag Magnetron sputtering source
DE19949394A1 (de) * 1999-10-13 2001-04-19 Balzers Process Systems Gmbh Elektrische Versorgungseinheit und Verfahren zur Reduktion der Funkenbildung beim Sputtern
JP4703828B2 (ja) * 2000-09-07 2011-06-15 株式会社アルバック スパッタリング装置及び薄膜製造方法
JP4246547B2 (ja) * 2003-05-23 2009-04-02 株式会社アルバック スパッタリング装置、及びスパッタリング方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1358881A (zh) * 2001-11-20 2002-07-17 中国科学院长春光学精密机械与物理研究所 真空多元溅射镀膜方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP平3-277771A 1991.12.09
JP特开2000-353316A 2000.12.19

Also Published As

Publication number Publication date
TW200710251A (en) 2007-03-16
TWI401333B (zh) 2013-07-11
JP2007031817A (ja) 2007-02-08
JP4922581B2 (ja) 2012-04-25
KR101231668B1 (ko) 2013-02-08
CN1904132A (zh) 2007-01-31
KR20070014992A (ko) 2007-02-01

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