KR101231668B1 - 스퍼터링 장치 및 스퍼터링 방법 - Google Patents
스퍼터링 장치 및 스퍼터링 방법 Download PDFInfo
- Publication number
- KR101231668B1 KR101231668B1 KR1020060069713A KR20060069713A KR101231668B1 KR 101231668 B1 KR101231668 B1 KR 101231668B1 KR 1020060069713 A KR1020060069713 A KR 1020060069713A KR 20060069713 A KR20060069713 A KR 20060069713A KR 101231668 B1 KR101231668 B1 KR 101231668B1
- Authority
- KR
- South Korea
- Prior art keywords
- targets
- target
- parallel
- sputtering
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2005-00220889 | 2005-07-29 | ||
| JP2005220889A JP4922581B2 (ja) | 2005-07-29 | 2005-07-29 | スパッタリング装置及びスパッタリング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20070014992A KR20070014992A (ko) | 2007-02-01 |
| KR101231668B1 true KR101231668B1 (ko) | 2013-02-08 |
Family
ID=37673492
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020060069713A Active KR101231668B1 (ko) | 2005-07-29 | 2006-07-25 | 스퍼터링 장치 및 스퍼터링 방법 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4922581B2 (https=) |
| KR (1) | KR101231668B1 (https=) |
| CN (1) | CN1904132B (https=) |
| TW (1) | TWI401333B (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101083443B1 (ko) * | 2007-03-01 | 2011-11-14 | 가부시키가이샤 알박 | 박막 형성 방법 및 박막 형성 장치 |
| JP4707693B2 (ja) * | 2007-05-01 | 2011-06-22 | 株式会社アルバック | スパッタリング装置及びスパッタリング方法 |
| JP2009024230A (ja) * | 2007-07-20 | 2009-02-05 | Kobe Steel Ltd | スパッタリング装置 |
| KR20100030676A (ko) * | 2007-08-20 | 2010-03-18 | 가부시키가이샤 알박 | 스퍼터링 방법 |
| WO2010090197A1 (ja) * | 2009-02-04 | 2010-08-12 | シャープ株式会社 | 透明導電膜形成体及びその製造方法 |
| WO2011031056A2 (ko) * | 2009-09-09 | 2011-03-17 | 주식회사 티엔텍 | 기판진동장치가 구비된 스퍼터링 시스템 및 그 제어방법 |
| CN102312206B (zh) * | 2010-06-29 | 2015-07-15 | 株式会社爱发科 | 溅射方法 |
| JP5813874B2 (ja) * | 2011-08-25 | 2015-11-17 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | スパッタリング装置およびスパッタリング方法 |
| CN103014639B (zh) * | 2012-12-12 | 2015-02-25 | 京东方科技集团股份有限公司 | 溅射靶材及溅射装置 |
| CN104878356B (zh) * | 2015-06-08 | 2017-11-24 | 光驰科技(上海)有限公司 | 一种磁控溅射靶材磁铁放置角度的确定方法 |
| KR102580293B1 (ko) * | 2016-01-05 | 2023-09-19 | 삼성디스플레이 주식회사 | 스퍼터링 장치 |
| JP2020143356A (ja) * | 2019-03-08 | 2020-09-10 | 株式会社アルバック | スパッタリング装置及びスパッタリング方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002508447A (ja) | 1997-12-17 | 2002-03-19 | ユナキス・トレーディング・アクチェンゲゼルシャフト | マグネトロンスパッタ供給源 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02258976A (ja) * | 1988-09-26 | 1990-10-19 | Tokuda Seisakusho Ltd | スパッタ装置 |
| JPH0364460A (ja) * | 1989-07-31 | 1991-03-19 | Hitachi Ltd | 薄膜形成装置 |
| JPH111770A (ja) * | 1997-06-06 | 1999-01-06 | Anelva Corp | スパッタリング装置及びスパッタリング方法 |
| TW399245B (en) * | 1997-10-29 | 2000-07-21 | Nec Corp | Sputtering apparatus for sputtering high melting point metal and method for manufacturing semiconductor device having high melting point metal |
| DE19949394A1 (de) * | 1999-10-13 | 2001-04-19 | Balzers Process Systems Gmbh | Elektrische Versorgungseinheit und Verfahren zur Reduktion der Funkenbildung beim Sputtern |
| JP4703828B2 (ja) * | 2000-09-07 | 2011-06-15 | 株式会社アルバック | スパッタリング装置及び薄膜製造方法 |
| CN1358881A (zh) * | 2001-11-20 | 2002-07-17 | 中国科学院长春光学精密机械与物理研究所 | 真空多元溅射镀膜方法 |
| JP4246547B2 (ja) * | 2003-05-23 | 2009-04-02 | 株式会社アルバック | スパッタリング装置、及びスパッタリング方法 |
-
2005
- 2005-07-29 JP JP2005220889A patent/JP4922581B2/ja not_active Expired - Fee Related
-
2006
- 2006-07-12 TW TW095125494A patent/TWI401333B/zh active
- 2006-07-25 KR KR1020060069713A patent/KR101231668B1/ko active Active
- 2006-07-28 CN CN2006101076272A patent/CN1904132B/zh active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002508447A (ja) | 1997-12-17 | 2002-03-19 | ユナキス・トレーディング・アクチェンゲゼルシャフト | マグネトロンスパッタ供給源 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200710251A (en) | 2007-03-16 |
| CN1904132B (zh) | 2011-07-20 |
| TWI401333B (zh) | 2013-07-11 |
| JP2007031817A (ja) | 2007-02-08 |
| JP4922581B2 (ja) | 2012-04-25 |
| CN1904132A (zh) | 2007-01-31 |
| KR20070014992A (ko) | 2007-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4336739B2 (ja) | 成膜装置 | |
| US20100078309A1 (en) | Sputtering method and sputtering apparatus | |
| KR101231668B1 (ko) | 스퍼터링 장치 및 스퍼터링 방법 | |
| CN101528972A (zh) | 薄膜形成方法及薄膜形成装置 | |
| CN101657562B (zh) | 溅镀装置及溅镀方法 | |
| CN100535178C (zh) | 溅射方法及其装置 | |
| TWI414621B (zh) | Sputtering target and sputtering method using the target | |
| US6740212B2 (en) | Rectangular magnetron sputtering cathode with high target utilization | |
| KR101231669B1 (ko) | 스퍼터링 장치 및 스퍼터링 방법 | |
| CN101871092B (zh) | 溅射方法 | |
| TWI383061B (zh) | Magnetron sputtering electrode and sputtering device using magnetron sputtering electrode | |
| CN101784694B (zh) | 溅射方法 | |
| JPH11350123A (ja) | 薄膜製造装置および液晶表示基板の製造方法 | |
| JP4999602B2 (ja) | 成膜装置 | |
| TWI381062B (zh) | A target assembly, and a sputtering apparatus provided with the target assembly | |
| JP4959175B2 (ja) | マグネトロンスパッタ電極及びマグネトロンスパッタ電極を備えたスパッタリング装置 | |
| KR101293129B1 (ko) | 스퍼터링장치 | |
| JP2025119345A (ja) | 成膜装置及び成膜方法 | |
| JPH09111448A (ja) | スパッタ装置 | |
| CN103147048A (zh) | 连续式溅镀设备 | |
| WO2002000960A1 (fr) | Dispositif de pulverisation magnetron |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| A201 | Request for examination | ||
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1 |
|
| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
|
| FPAY | Annual fee payment |
Payment date: 20151229 Year of fee payment: 4 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |
|
| FPAY | Annual fee payment |
Payment date: 20170116 Year of fee payment: 5 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |
|
| FPAY | Annual fee payment |
Payment date: 20171207 Year of fee payment: 6 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 6 |
|
| FPAY | Annual fee payment |
Payment date: 20181219 Year of fee payment: 7 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 7 |
|
| FPAY | Annual fee payment |
Payment date: 20200120 Year of fee payment: 8 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 8 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 9 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 10 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 11 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 12 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 13 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |