JP4922581B2 - スパッタリング装置及びスパッタリング方法 - Google Patents

スパッタリング装置及びスパッタリング方法 Download PDF

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Publication number
JP4922581B2
JP4922581B2 JP2005220889A JP2005220889A JP4922581B2 JP 4922581 B2 JP4922581 B2 JP 4922581B2 JP 2005220889 A JP2005220889 A JP 2005220889A JP 2005220889 A JP2005220889 A JP 2005220889A JP 4922581 B2 JP4922581 B2 JP 4922581B2
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Japan
Prior art keywords
targets
target
substrate
sputtering
film
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JP2005220889A
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English (en)
Japanese (ja)
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JP2007031817A5 (https=
JP2007031817A (ja
Inventor
大士 小林
典明 谷
孝 小松
淳也 清田
肇 中村
新井　　真
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Ulvac Inc
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Ulvac Inc
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Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP2005220889A priority Critical patent/JP4922581B2/ja
Priority to TW095125494A priority patent/TWI401333B/zh
Priority to KR1020060069713A priority patent/KR101231668B1/ko
Priority to CN2006101076272A priority patent/CN1904132B/zh
Publication of JP2007031817A publication Critical patent/JP2007031817A/ja
Publication of JP2007031817A5 publication Critical patent/JP2007031817A5/ja
Application granted granted Critical
Publication of JP4922581B2 publication Critical patent/JP4922581B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2005220889A 2005-07-29 2005-07-29 スパッタリング装置及びスパッタリング方法 Expired - Fee Related JP4922581B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005220889A JP4922581B2 (ja) 2005-07-29 2005-07-29 スパッタリング装置及びスパッタリング方法
TW095125494A TWI401333B (zh) 2005-07-29 2006-07-12 Sputtering apparatus and sputtering method
KR1020060069713A KR101231668B1 (ko) 2005-07-29 2006-07-25 스퍼터링 장치 및 스퍼터링 방법
CN2006101076272A CN1904132B (zh) 2005-07-29 2006-07-28 溅射装置和溅射方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005220889A JP4922581B2 (ja) 2005-07-29 2005-07-29 スパッタリング装置及びスパッタリング方法

Publications (3)

Publication Number Publication Date
JP2007031817A JP2007031817A (ja) 2007-02-08
JP2007031817A5 JP2007031817A5 (https=) 2008-08-21
JP4922581B2 true JP4922581B2 (ja) 2012-04-25

Family

ID=37673492

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005220889A Expired - Fee Related JP4922581B2 (ja) 2005-07-29 2005-07-29 スパッタリング装置及びスパッタリング方法

Country Status (4)

Country Link
JP (1) JP4922581B2 (https=)
KR (1) KR101231668B1 (https=)
CN (1) CN1904132B (https=)
TW (1) TWI401333B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101083443B1 (ko) * 2007-03-01 2011-11-14 가부시키가이샤 알박 박막 형성 방법 및 박막 형성 장치
JP4707693B2 (ja) * 2007-05-01 2011-06-22 株式会社アルバック スパッタリング装置及びスパッタリング方法
JP2009024230A (ja) * 2007-07-20 2009-02-05 Kobe Steel Ltd スパッタリング装置
KR20100030676A (ko) * 2007-08-20 2010-03-18 가부시키가이샤 알박 스퍼터링 방법
WO2010090197A1 (ja) * 2009-02-04 2010-08-12 シャープ株式会社 透明導電膜形成体及びその製造方法
WO2011031056A2 (ko) * 2009-09-09 2011-03-17 주식회사 티엔텍 기판진동장치가 구비된 스퍼터링 시스템 및 그 제어방법
CN102312206B (zh) * 2010-06-29 2015-07-15 株式会社爱发科 溅射方法
JP5813874B2 (ja) * 2011-08-25 2015-11-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ スパッタリング装置およびスパッタリング方法
CN103014639B (zh) * 2012-12-12 2015-02-25 京东方科技集团股份有限公司 溅射靶材及溅射装置
CN104878356B (zh) * 2015-06-08 2017-11-24 光驰科技(上海)有限公司 一种磁控溅射靶材磁铁放置角度的确定方法
KR102580293B1 (ko) * 2016-01-05 2023-09-19 삼성디스플레이 주식회사 스퍼터링 장치
JP2020143356A (ja) * 2019-03-08 2020-09-10 株式会社アルバック スパッタリング装置及びスパッタリング方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02258976A (ja) * 1988-09-26 1990-10-19 Tokuda Seisakusho Ltd スパッタ装置
JPH0364460A (ja) * 1989-07-31 1991-03-19 Hitachi Ltd 薄膜形成装置
JPH111770A (ja) * 1997-06-06 1999-01-06 Anelva Corp スパッタリング装置及びスパッタリング方法
TW399245B (en) * 1997-10-29 2000-07-21 Nec Corp Sputtering apparatus for sputtering high melting point metal and method for manufacturing semiconductor device having high melting point metal
US6093293A (en) 1997-12-17 2000-07-25 Balzers Hochvakuum Ag Magnetron sputtering source
DE19949394A1 (de) * 1999-10-13 2001-04-19 Balzers Process Systems Gmbh Elektrische Versorgungseinheit und Verfahren zur Reduktion der Funkenbildung beim Sputtern
JP4703828B2 (ja) * 2000-09-07 2011-06-15 株式会社アルバック スパッタリング装置及び薄膜製造方法
CN1358881A (zh) * 2001-11-20 2002-07-17 中国科学院长春光学精密机械与物理研究所 真空多元溅射镀膜方法
JP4246547B2 (ja) * 2003-05-23 2009-04-02 株式会社アルバック スパッタリング装置、及びスパッタリング方法

Also Published As

Publication number Publication date
TW200710251A (en) 2007-03-16
CN1904132B (zh) 2011-07-20
TWI401333B (zh) 2013-07-11
JP2007031817A (ja) 2007-02-08
KR101231668B1 (ko) 2013-02-08
CN1904132A (zh) 2007-01-31
KR20070014992A (ko) 2007-02-01

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