TWI401333B - Sputtering apparatus and sputtering method - Google Patents

Sputtering apparatus and sputtering method Download PDF

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Publication number
TWI401333B
TWI401333B TW095125494A TW95125494A TWI401333B TW I401333 B TWI401333 B TW I401333B TW 095125494 A TW095125494 A TW 095125494A TW 95125494 A TW95125494 A TW 95125494A TW I401333 B TWI401333 B TW I401333B
Authority
TW
Taiwan
Prior art keywords
targets
target
sputtering
substrate
magnet
Prior art date
Application number
TW095125494A
Other languages
English (en)
Chinese (zh)
Other versions
TW200710251A (en
Inventor
小林大士
谷典明
小松孝
清田淳也
中村肇
新井真
Original Assignee
愛發科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 愛發科股份有限公司 filed Critical 愛發科股份有限公司
Publication of TW200710251A publication Critical patent/TW200710251A/zh
Application granted granted Critical
Publication of TWI401333B publication Critical patent/TWI401333B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW095125494A 2005-07-29 2006-07-12 Sputtering apparatus and sputtering method TWI401333B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005220889A JP4922581B2 (ja) 2005-07-29 2005-07-29 スパッタリング装置及びスパッタリング方法

Publications (2)

Publication Number Publication Date
TW200710251A TW200710251A (en) 2007-03-16
TWI401333B true TWI401333B (zh) 2013-07-11

Family

ID=37673492

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095125494A TWI401333B (zh) 2005-07-29 2006-07-12 Sputtering apparatus and sputtering method

Country Status (4)

Country Link
JP (1) JP4922581B2 (https=)
KR (1) KR101231668B1 (https=)
CN (1) CN1904132B (https=)
TW (1) TWI401333B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101083443B1 (ko) * 2007-03-01 2011-11-14 가부시키가이샤 알박 박막 형성 방법 및 박막 형성 장치
JP4707693B2 (ja) * 2007-05-01 2011-06-22 株式会社アルバック スパッタリング装置及びスパッタリング方法
JP2009024230A (ja) * 2007-07-20 2009-02-05 Kobe Steel Ltd スパッタリング装置
KR20100030676A (ko) * 2007-08-20 2010-03-18 가부시키가이샤 알박 스퍼터링 방법
WO2010090197A1 (ja) * 2009-02-04 2010-08-12 シャープ株式会社 透明導電膜形成体及びその製造方法
WO2011031056A2 (ko) * 2009-09-09 2011-03-17 주식회사 티엔텍 기판진동장치가 구비된 스퍼터링 시스템 및 그 제어방법
CN102312206B (zh) * 2010-06-29 2015-07-15 株式会社爱发科 溅射方法
JP5813874B2 (ja) * 2011-08-25 2015-11-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ スパッタリング装置およびスパッタリング方法
CN103014639B (zh) * 2012-12-12 2015-02-25 京东方科技集团股份有限公司 溅射靶材及溅射装置
CN104878356B (zh) * 2015-06-08 2017-11-24 光驰科技(上海)有限公司 一种磁控溅射靶材磁铁放置角度的确定方法
KR102580293B1 (ko) * 2016-01-05 2023-09-19 삼성디스플레이 주식회사 스퍼터링 장치
JP2020143356A (ja) * 2019-03-08 2020-09-10 株式会社アルバック スパッタリング装置及びスパッタリング方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02258976A (ja) * 1988-09-26 1990-10-19 Tokuda Seisakusho Ltd スパッタ装置
JPH0364460A (ja) * 1989-07-31 1991-03-19 Hitachi Ltd 薄膜形成装置
TW399245B (en) * 1997-10-29 2000-07-21 Nec Corp Sputtering apparatus for sputtering high melting point metal and method for manufacturing semiconductor device having high melting point metal
TW452601B (en) * 1997-06-06 2001-09-01 Anelva Corp Sputtering device and sputtering method
TW486719B (en) * 1999-10-13 2002-05-11 Balzers Process Systems Gmbh Power supply unit and method to reduce the spark formation when sputtering
TW593714B (en) * 2000-09-07 2004-06-21 Ulvac Inc Sputtering apparatus and film manufacturing method
JP2004346388A (ja) * 2003-05-23 2004-12-09 Ulvac Japan Ltd スパッタ源、スパッタリング装置、及びスパッタリング方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6093293A (en) 1997-12-17 2000-07-25 Balzers Hochvakuum Ag Magnetron sputtering source
CN1358881A (zh) * 2001-11-20 2002-07-17 中国科学院长春光学精密机械与物理研究所 真空多元溅射镀膜方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02258976A (ja) * 1988-09-26 1990-10-19 Tokuda Seisakusho Ltd スパッタ装置
JPH0364460A (ja) * 1989-07-31 1991-03-19 Hitachi Ltd 薄膜形成装置
TW452601B (en) * 1997-06-06 2001-09-01 Anelva Corp Sputtering device and sputtering method
TW399245B (en) * 1997-10-29 2000-07-21 Nec Corp Sputtering apparatus for sputtering high melting point metal and method for manufacturing semiconductor device having high melting point metal
TW486719B (en) * 1999-10-13 2002-05-11 Balzers Process Systems Gmbh Power supply unit and method to reduce the spark formation when sputtering
TW593714B (en) * 2000-09-07 2004-06-21 Ulvac Inc Sputtering apparatus and film manufacturing method
JP2004346388A (ja) * 2003-05-23 2004-12-09 Ulvac Japan Ltd スパッタ源、スパッタリング装置、及びスパッタリング方法

Also Published As

Publication number Publication date
TW200710251A (en) 2007-03-16
CN1904132B (zh) 2011-07-20
JP2007031817A (ja) 2007-02-08
JP4922581B2 (ja) 2012-04-25
KR101231668B1 (ko) 2013-02-08
CN1904132A (zh) 2007-01-31
KR20070014992A (ko) 2007-02-01

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