TW200710251A - Sputtering apparatus and sputtering method - Google Patents
Sputtering apparatus and sputtering methodInfo
- Publication number
- TW200710251A TW200710251A TW095125494A TW95125494A TW200710251A TW 200710251 A TW200710251 A TW 200710251A TW 095125494 A TW095125494 A TW 095125494A TW 95125494 A TW95125494 A TW 95125494A TW 200710251 A TW200710251 A TW 200710251A
- Authority
- TW
- Taiwan
- Prior art keywords
- targets
- sputtering
- power supply
- sputtering apparatus
- potential
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
Abstract
This invention provides a sputtering device that avoid any non-erosive area remaining on target, and a sputtering apparatus that form films of uniform quality during sputtering process. The sputtering apparatus (2) in this invention comprises four targets (241) arranged at predetermined space in a vacuum chamber (21), and AC power supply (E). Each of AC power sources (E) is connected, to two of the targets one by one so as to apply negative potential and positive potential or grounding potential to the targets alternately. The main feature is that each AC power supply (E) is connected to two of non-adjacent targets (241).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005220889A JP4922581B2 (en) | 2005-07-29 | 2005-07-29 | Sputtering apparatus and sputtering method |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200710251A true TW200710251A (en) | 2007-03-16 |
TWI401333B TWI401333B (en) | 2013-07-11 |
Family
ID=37673492
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095125494A TWI401333B (en) | 2005-07-29 | 2006-07-12 | Sputtering apparatus and sputtering method |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4922581B2 (en) |
KR (1) | KR101231668B1 (en) |
CN (1) | CN1904132B (en) |
TW (1) | TWI401333B (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008108185A1 (en) * | 2007-03-01 | 2008-09-12 | Ulvac, Inc. | Thin film forming method, and thin film forming apparatus |
JP4707693B2 (en) * | 2007-05-01 | 2011-06-22 | 株式会社アルバック | Sputtering apparatus and sputtering method |
JP2009024230A (en) * | 2007-07-20 | 2009-02-05 | Kobe Steel Ltd | Sputtering apparatus |
KR20100030676A (en) * | 2007-08-20 | 2010-03-18 | 가부시키가이샤 알박 | Sputtering method |
WO2010090197A1 (en) * | 2009-02-04 | 2010-08-12 | シャープ株式会社 | Object coated with transparent conductive film and process for producing same |
WO2011031056A2 (en) * | 2009-09-09 | 2011-03-17 | 주식회사 티엔텍 | Sputtering system comprising a substrate-vibrating apparatus, and method for controlling same |
CN102312206B (en) * | 2010-06-29 | 2015-07-15 | 株式会社爱发科 | Sputtering method |
WO2013026491A1 (en) * | 2011-08-25 | 2013-02-28 | Applied Materials, Inc. | Sputtering apparatus and method |
CN103014639B (en) * | 2012-12-12 | 2015-02-25 | 京东方科技集团股份有限公司 | Sputtering target material and sputtering device |
CN104878356B (en) * | 2015-06-08 | 2017-11-24 | 光驰科技(上海)有限公司 | A kind of determination method of magnetic control spattering target magnet placed angle |
KR102580293B1 (en) * | 2016-01-05 | 2023-09-19 | 삼성디스플레이 주식회사 | Sputtering apparatus |
JP2020143356A (en) * | 2019-03-08 | 2020-09-10 | 株式会社アルバック | Sputtering apparatus and sputtering method |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02258976A (en) * | 1988-09-26 | 1990-10-19 | Tokuda Seisakusho Ltd | Sputtering device |
JPH0364460A (en) * | 1989-07-31 | 1991-03-19 | Hitachi Ltd | Thin film forming device |
JPH111770A (en) * | 1997-06-06 | 1999-01-06 | Anelva Corp | Sputtering apparatus and sputtering method |
TW399245B (en) * | 1997-10-29 | 2000-07-21 | Nec Corp | Sputtering apparatus for sputtering high melting point metal and method for manufacturing semiconductor device having high melting point metal |
US6093293A (en) | 1997-12-17 | 2000-07-25 | Balzers Hochvakuum Ag | Magnetron sputtering source |
DE19949394A1 (en) * | 1999-10-13 | 2001-04-19 | Balzers Process Systems Gmbh | Electrical supply unit and method for reducing sparking during sputtering |
JP4703828B2 (en) * | 2000-09-07 | 2011-06-15 | 株式会社アルバック | Sputtering apparatus and thin film manufacturing method |
CN1358881A (en) * | 2001-11-20 | 2002-07-17 | 中国科学院长春光学精密机械与物理研究所 | Vacuum multi-unit sputtering plating method |
JP4246547B2 (en) * | 2003-05-23 | 2009-04-02 | 株式会社アルバック | Sputtering apparatus and sputtering method |
-
2005
- 2005-07-29 JP JP2005220889A patent/JP4922581B2/en active Active
-
2006
- 2006-07-12 TW TW095125494A patent/TWI401333B/en active
- 2006-07-25 KR KR1020060069713A patent/KR101231668B1/en active IP Right Grant
- 2006-07-28 CN CN2006101076272A patent/CN1904132B/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2007031817A (en) | 2007-02-08 |
KR20070014992A (en) | 2007-02-01 |
KR101231668B1 (en) | 2013-02-08 |
CN1904132B (en) | 2011-07-20 |
CN1904132A (en) | 2007-01-31 |
JP4922581B2 (en) | 2012-04-25 |
TWI401333B (en) | 2013-07-11 |
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