TW452601B - Sputtering device and sputtering method - Google Patents

Sputtering device and sputtering method Download PDF

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Publication number
TW452601B
TW452601B TW087100533A TW87100533A TW452601B TW 452601 B TW452601 B TW 452601B TW 087100533 A TW087100533 A TW 087100533A TW 87100533 A TW87100533 A TW 87100533A TW 452601 B TW452601 B TW 452601B
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Taiwan
Prior art keywords
target
sputtering
substrate
auxiliary
plating
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TW087100533A
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Chinese (zh)
Inventor
Masahiko Kobayashi
Nobuyuki Takahashi
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Anelva Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A sputtering device includes a chamber equipped with an exhaust system. A sputtering power source applies specific high frequency electric power to the target. A supplemental electrode is provided so that it surrounds the flight path of sputter particles between the target and a substrate. The supplemental electrode is either maintained at a floating potential so that it is capacitively coupled with the target to which high frequency electric power has been applied, in addition, high frequency electric power of the same frequency may be applied directly to the supplemental electrode. A plasma P' is formed on the inside of the supplemental electrode, and the sputter particles released from the target are ionized. An extraction-use electric field is set up by an electric field establishment means, and is directed perpendicularly to the substrate. This construction and its associated method allow a film to be formed with good bottom coverage on the inner surfaces of holes whose aspect ratio is over 4.

Description

4 5 2 6 0 1 明説 明發、五 域 領 術 技 之 明 發 為 係 明 發 本 即 法 方 鍍 漉 及 置 裝 鍍0 種 一 於 關 像 明 發 本 ; 功 置 之 裝化 鍍子 濺離 之 圼 上 子 造粒 製鍍 之濺 件得 元使 體 Μ 導可 半該 種有 各備 在具 用種 使 一 該於 種關 1 是 Λ、/ 關特 術 0^0 濺]β例種 前 之 Μ 在各 能於 置 装 ’ 相 中之 之 層 件類 元 種 體同 導不 半止 之 防 路 Μ 電 用 輯該 邏及 和Μ 體、 憶成 記 形 之 之 種 _ 各線 像配 之 ， 之 且好 並良 ο 圼 程Μ 製可 鍍須 濺必 該 , 用中 使程 偽製 ’ 鍍 時濺 之在 造 ’ 製求 之要 膜地 蔽烈 障強 的 經 散 已 擴近 互 最 地 性 圍 範 蓋 覆 效 有 體 具 加 更 得 說 若 面使 Ά 之泛 洞廣 孔所 之 之 上中 板AM 基 D 在在 成如 形例 該 ’ 住話 覆的 被點 構 *ί1- 種 1 用 採 係 構 該 而 膜象 蔽琨 障染 ; 有污 置互 設相 . 之 面間 内 之 之 層 孔散 , 觸擴 )-接和 體之層 晶上線 電層配 效散點 場擴接 τ(於該 FE設止 I 該防 OS在夠 C 是能 之 ， 而 用造 ， S ο Γ Π 記 之 個 各 有 行 進 在 Ο 造 構 的 生 發 (請先閱讀背面之注意事項再填寫本頁) 經消部中央標準局員工消費合作社印掣 T-w 該置 接 設 連 ’ 了 膜 為緣 ’ 絕 中間 之層 造在 構該 線有 配行 層進 多M 之 所 業 ， 作線 線配 配層 之上 元和 單 線 體配 憶 層 線内 配孔 間通 層 貫 該在 將 該 且用 而採 ， 也 孔 ’ 通時 貫 此 業 作 之 内 孔 通 貫 該 至 入 埋 止 以 可 而 膜0 障 有 成 形 此 ο 因 造 , 構景 之背 生為 發作 η)來 ο • 1 J t rtM a 力 η 曾 •1 Hy. am之 nt度 Co體 - 積 SSM rofe c /1. T 象洞 現孔 染之 污漾 互這 相像 該 幅 者之 或元 徑位 直 萬 之百 4 C 6 開在 洞 ’ 孔如 於例 對 。 相中 J 之 度 高 深提 之年 洞 每 孔 在 zi\ E b i t ) 橫 值 縱比 其 之 ’ 寬 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 4 5 260 1 A7 B7 經滴部中央標if局負工消費合作社印來 五、發明説明 ( 2 ) 1 1 I DR AH 之 中 其 縱 橫 比 係 為 4左右 但是 在256 百 萬 位 元 之 1 1 1 DR AH 之 中 其 縱 橫 比 係 為 5〜6左 右 〇 1 請 1 I 在 有 障 蔽 膜 存 在 之 狀 態 下 其 相 對 於 孔洞 之 周 圍 之 面 上 先 閱 1 I 之 堆 積 量 係 必 須 有 1 0 至 1 5 之 堆 積 量 之薄 膜 堆 積 在 孔 讀 背 面 1 1 I 洞 之 底 面 上 0 就 比 較 高 之 縱 橫 比 之 孔 洞 而言 並 不 容 易 提 之 注 1 | 意 I 高 其 底 面 有 效 覆 Μ 範 圍 率 (該對於孔洞底面之堆積速度 事 項 1 | 再 1 J 相 iti 對 於 孔 洞 周 圍 之 面 上 之 成 膜 速 度 之 比 值） 而進行該成 填 寫 ，食 本 膜 作 業 〇 當 該 底 面 有 效 覆 蓋 範 圍 率 圼 降 低之 時 則 該 在 孔 % 1 I 洞 底 面 之 障 蔽 膜 會 變 得 比 較 薄 因 此 很可 能 會 發 生 有 像 1 1 I 接 點 (面） 洩 漏 (J υ η c t i 〇 η - -1 e a k) 之 元 件 特性 之 致 命 之 缺 陷。 \ 1 該 作 為 提 高 其 底 面 有 效 覆 蓋 範 圍 率 之 方法 一 直 到 a 前 ΐτ 為 止 已 經 開 發 有 準 直 濺 鍍 法 (C 〇 1 1 i id a t e s P u 11 e Γ) 和 低 1 1 壓 遠 間 隔 濺 鍍 法 之 方 法 V 該 準 直 濺 鍍 法 (col 1 i i a t e 1 I S P u t t e Γ ) 係 在 標 靶 和 基 板 之 間 9 設 置 有該 沿 著 垂 直 於 基 1 1 板 之 方 向 而 打 開 有 許 多 之 孔 洞 之 板 件 (準直儀： 1 coll i IB a t 0 Γ ) y該準直濺鍍法（C 0 11 i 1 at e s p u t t e r ) 係 為 1 1 —一 種 僅 選 擇 性 地 只 有 使 得 該 幾 乎 沿 著 垂 直於 基 板 之 方 向 而 1 1 進 行 飛 行 之 濺 鍍 粒 子 (通常* 係為濺鈹原子·「 ) 來 到 達 至 1 ! 基 板 之 方 法 0 而 該 低 壓 遶 間 隔 濺 鍍 法 ， 偽為 一 種 加 長 該 標 1 i I 靶 和 基 板 間 之 距 離 (¾ 陰常 大約為3倍 至 5倍 ) 而 相 對 地 1 1 使 得 許 多 之 該 幾 乎 沿 著 垂 直 於 基 板 之 方 尚而 進 行 飛 行 之 濺 1 1 鍍 粒 子 入 射 至 基 板 中 同 時 ， 還 藉 由 該使 得 其 壓 力 比 起 1 1 通 常 之 壓 力 遷 來 得 更 低 (在0 .8 ID T 0 Γ r左右以下） 而 且 加 ί I 長 其 平 均 白 由 行 程 K 使 得 這 濺 鍍 粒 子， 並 不 會 發 生 有 1 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -5 - 4 5 260 1 A7 B7五、發明説明（3 ) 經米.部中央標孽局®ί：工消費合作社印製 法 之 象 現 亂 散 法 鍍 賤 直 準 該 在 是 但4 5 2 6 0 1 The instructions for the hair and the five-field collar technique are the hair for the hair, which is the French plating and the installation plating. The first is for the Guanfa Mingfa; the functional equipment is sprayed away.圼 上 子 Granulated and sputtered pieces are made to make the body M. This type has each kind of equipment, so that it should be related to the species. 1 is Λ, / 特特 术 0 ^ 0 splashing] β before the species The M is in the layers of each type that can be installed in the phase. The body is more than half of the road defense. The electricity is used to edit the logic and the M body and the seeds that are memorized. It is good and good. The process M system must be plated and must be splashed, and the process must be used to fake the 'spattering in the plating process'. The requirements of the film to cover the strong barriers have been expanded to each other. The terrestrial enclosure covers the body structure, let alone say that if the surface makes the pan-holes and wide-holes above the mid-plate AM base D Species 1 should be constructed with a collection system, and the membrane image should be used to shield the dysentery; the contaminated layers are mutually opposite. The layers of holes in the surface , Expansion)-Connected to the layer-to-layer layer of the electrical layer, the effective layer scattering field expansion connection τ (set the I in the FE, the anti-OS is enough C is enough, and the use, S ο Γ Π Each has its own hair in progress. (Please read the precautions on the back before filling out this page.) It is printed by the Consumer Cooperative of the Central Standard Bureau of the Ministry of Consumer Affairs. In the construction of this line, there are matching layers for multiple M, as the line layer matching layer and the single line body memory layer line, the distribution between the hole through the layer should be used and used, also hole ' Throughout this work, the inner hole of the work should pass through to the ground until it can be buried, but the film can be formed. The reason is that the back of the scene is a seizure η). Ο • 1 J t rtM a 力 η Once • 1 Hy. Am nt degree Co body-product SSM rofe c / 1. T like a hole in the hole stained with stains and reciprocal resemblance to this one's or element diameter is one hundred thousand 4 C 6 open in the hole 'hole as In the case right. In the phase, the height and depth of the hole in the annual hole are zi \ E bit). The horizontal value is longer than its width. The paper size is applicable to China National Standard (CNS) A4 (210X 297 mm) 4 5 260 1 A7 B7 Printed by the Central Government Bureau of the Ministry of Industry and Commerce, Consumer Cooperatives. 5. Description of Invention (2) The aspect ratio of 1 1 I DR AH is about 4 but among the 1 1 1 DR AH of 256 million bits. The aspect ratio is about 5 ~ 6. 1 1 Please read 1 I in the presence of the barrier film on the surface surrounding the hole. The 1 I deposition amount must be a film with a 10 to 15 deposition amount. Stacked on the back of the hole reading 1 1 I The bottom surface of the hole 0 Not easy to mention with respect to holes with a high aspect ratio Note 1 | Meaning I The bottom surface effectively covers the range of coverage (the matter of stacking speed for the bottom surface of the hole 1 | another 1 J phase iti for the face around the hole The ratio of the film formation speed above) and fill in the composition, food and film operations. When the effective coverage rate of the bottom surface decreases, the barrier film on the bottom surface of the hole% 1 I will become thinner, so it is very likely A fatal defect in component characteristics like 1 1 I contact (face) leakage (J υ η cti 〇η--1 eak) will occur. \ 1 As a method to improve the effective coverage of its bottom surface, a collimated sputtering method (C 〇1 1 i id ates P u 11 e Γ) and a low 1 1 far-interval sputtering have been developed up to a front ΐτ. Method V: The collimated sputtering method (col 1 iiate 1 ISP utte Γ) is provided between the target and the substrate. 9 A plate member having a plurality of holes opened along a direction perpendicular to the base 1 1 plate is provided. (Collimator: 1 coll i IB at 0 Γ) y The collimated sputtering method (C 0 11 i 1 at esputter) is 1 1 — a kind of only selectively makes the almost along the direction perpendicular to the substrate And 1 1 flying sputtering particles (usually * is beryllium atom · ") to reach 1! Substrate method 0 and the low-voltage winding interval sputtering method is a pseudo-long target 1 i I target and substrate The distance between them (¾ Yin is usually about 3 to 5 times) and relatively 1 1 makes many Spatter flying along the square perpendicular to the substrate 1 1 At the same time that the plated particles are incident on the substrate, the pressure is lowered than the normal pressure of 1 1 (at 0.8 ID T 0 Γ Below r) and its length is increased by I, the average white length is made by the stroke K, so that the sputtered particles do not occur. 1 paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -5-4 5 260 1 A7 B7 V. Description of the invention (3) Ministry of Standards and Standards Bureau of the Ministry of Economic Affairs®: Industrial Printing Cooperative Cooperatives Printed by the Law of Presentation and Dispersal Method

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valve)之密閉之容器。該濺鍍室1，係為不銹鐧 之金屬製品，而圼電氣性之接地狀態。該排氣系統11，ί系 為一具備有渦輪分子幫浦和擴散用幫浦之多段式之真空排 氣系統。該排氣系統11，可Μ對於該濺鍍室1内，進行排 氣，而一直排氣到1 0〜8 To r r左右為止。該排氣：系統1 1， 係具備有可變孔板（v a r ί a b 1 e — 〇 r i f i c e )等之圖式上所並 沒有顯示出之排氣速度調整器*因此可以用來調整其排氣 速度1:1 標靶2，係為一厚度6miB ·、直徑300 ειβ左右之圓板狀物。 該標靶2，係透過金屬製之標靶座架21以及絕緣體22，而 被安裝在濺鍍室1上。 在標靶2之背後•係設置有磁鐵組裝體3 0，Μ用來進行 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公嫠） (諸先閲讀背面之注意事項再填寫本頁) 訂 9 A7 B7 45 260 1 五、發明説明（7 ) (讀先閲讀背面之注意事項再填寫本頁) 該磁控管濺鍍作業。該磁鐵組装體3 0 *係由中心磁鐵3 1、 和該用Μ包圍住該中心磁鐵3 1之周圍磁鐵3 2、和該用K連 接中心磁鐵31及周圔磁鐵32之圓板狀之軛板33所構成的。 雖然各個磁鐵31和32，都是永久磁鐵*但是，也可Μ使用 電磁鐵*來構成這些中心磁鐵3 1及周圍磁鐵3 2。 該濺鍍用電源3，係胞加一定之高頻電力至標靶2中而構 成的；若說得更加具體一點的話*即該濺鍍用電源3，係 藉由6k W左右之電力*而供應頻率13,56MHz左右之高頻至 標靶2中。在該濺鍍用電源3和標靶2之間，係設置有圖式 上並未顯示出之匹配器（κι a t c h e r )，Κ進行該阻抗匹配作 業。 該氣體導人用手段4 *偽主要由該用Μ積存有像氬氣 (Af)之濺鍍放電用氣體之高壓氣體筒41、Μ及該用Μ連接 高壓氣體茼41和濺鍍室1之配管42、Κ及該設置在配管42 上之閥43及流量調整器44而構成的。 經濟部中央標率局負工消費合作社印聚 基板座架5，係透過絕緣體5 3，而被密閉地設置在濺鍍 室I中；該基板座架5 >係平行於標靶2，而用Μ保持固定 注基板5 0。在該基板座架5，係設置有圖式上並未顯示出 之靜電暇附機構，Κ藉由靜電作用而吸附注基板5 0。該靜 電吸附機構，係在基板座架5内，設置有吸附電極 > 而施 加直流電壓至該吸附電極中。在該基板座架5内，像設置 有圖式上並未顯示出之加熱機構，以便在進行成膜作業之 時，加熱該基板50，而能夠非常有效率地進行成膜作業。 本實施形態之裝置之相當大之特徵點•就是設置有輔助 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） 10 45 260 1 A7 B7 經Μ部中央標单局員工消費合作社印製 五、發明説明 (8 1 .1 I 電 極 6 Μ包圍住該標靶2和基 板50間之濺鍍粒子之飛行路 1 1 1 徑 〇 1 I 輔 助 電 極 6 係為画筒狀物 而和標靶 2 Κ及基板5 0 t —— 請 先 閱 1 I 起 被 設 置 在 同 __. 個 釉上 〇 該輔 助電極6， 係為板厚度2ιτ κι左 讀 背 面 1 1 I 右 之 圓 筒 狀 物 並 且， 該 輔助 電極6之内 徑係為3 5 0〜 冬 1 I 意 1 400m m左右 而高度為50® ffi左右° 事 項 \ I 再 1 1 該 輔 助 電 極 8 係透過絕緣體6 1，而保 持固定在濺鍍 室1 填 寫 本 衣 上 〇 相 對 於 該 藉 由 濺鍍 放 電所 形成之電漿P，該輔肋電 極6 育 1 I f 則 成 為 浮 游 電 位 1 I 1 在 該 藉 由 濺 鍍 用 電源 而 施加 高頻至標靶2中而形成有 電 1 1 漿 P之時 該輔助電極6 會透 過該放電空間之電容量 -而 L 訂 和 標 靶 2進行電容性结合’ |該輔助電極6 則會隨著標靶2 1 1 之 口 壬 週 期 性 之 電 位 變化 該輔 肋電極6之 電位，也會圼 週 1 1 期 性 地 發 生 變 化 而在 輔 助電 極6之内側 ，設定有高頻 電 1 1 I 場 0 藉 由 該 高 頻 電 場之 作 用， 而在輔肋電極6之内側， 呈 1 輔 助 性 地 形 成 有 電 漿P ' 0 1 1 該 藉 由 濺 鍍 放 電 所形 成 之電 漿P、和該 藉由輔肋電極 6之 I ί 作 用 所 形 成 之 電 漿 P，， 係 有該 在空間上圼連績之狀態- kk 1 I 及 該 在 外 表 上 並 Μ 法區 別 之狀 態存在。也可Μ發現到 該 1 1 I 藉 由 濺 鍍 放 電 所 形 成之 電 漿P 會擴散至 該輔助電極6之内 1 1 側 之 空 間 中 0 不 論 是電 漿 P發生擴散現象 ，或者是另一 涸 1 1 所 形 成 之 電 漿 Ρ ' 和 電漿 P圼連鱷狀態，在 本質上並沒有 什 1 I 麽 不 同 處 0 在 電 漿 P發生擴散琨象之狀態 下|於該電漿 P發 [ I 生 有 擴 敗 琨 象 之 場 所， 也 能夠 藉由輔助電極6之作用， 而 1 1 本紙張尺度適用中國國家標準（CNS ) Α4規格（2丨0Χ297公嫠） -11- 45 260 1 A7 經滴部中央榡嗥局員Μ消費合作社印製 B7五、發明説明（9 ) 維持住相當密度之電漿。 藉由輔助電極6之作用，而另外地形成另一個電漿，在 本質上，也並沒有什麽不同處。 於圖1所示之裝置中，係在輔助電極6之内側，設置有磁 場設定用手段7，Μ設定該用來捕捉住電漿之磁場。該磁 場設定用手段7 >係由該用Μ包圍注該輔肋電極6之外側而 被配置在濺鍍室1内之第1磁鐵71、Μ及該配置在基板座架 5之下方之第2磁鐵72所構成的。 第1磁鐵71*係為和輔助電極6—起被配置在同一個軸上 之圓筒狀之永久磁鐵，而在第1磁鐵71之裡面和外面，會 出現相互並不相同之磁極。該第1磁鐵71，係透過金屬製 之保持固定用構件7]1，而被安裝在濺鍍室1上*因此*第 1磁鐵7 1，會成為圼電氣性之接地電位。 第1磁鐵7 1之大小，係隨著標靶2和基板5 0之大小，而跟 著變化。在使用直徑300«!®之標靶2之狀態下，則該第1磁 鐵71，會成為内徑350snm左右、外徑400miB左右、及高度 4 0 m 左右。並且該第1磁鐵7 1，在内側之面之表面上，像 使用著5 0 0高斯（g a n s s )左右之強度之物質》 第2磁鐵7 2，係為比起基板座架5之直徑而還來得更小之 圓筒狀之永久磁鐵。第2磁鐵7 2，係和第1磁鐵7 1 —起被配 置成為同心狀。在第2磁鐵72中，於第2磁鐵72之上端面和 下端面，會出現該相互並不相同之磁極。第2磁鐵72之大 小，係隨著基板50之大小•而跟著變化。在使用直徑8英 时之基板5 0之狀態下*則會使用該内徑大約1 4 0 m m、外徑 本紙張尺度適用中國國家標準（CNS ) A4规格（2丨OX 297公嫠) (讀先閱讀背面之注意事項再填寫本頁) —12 - 4 5 260 1 A7 經濟部中央標冷局員工消費合作社印製 B7五、發明説明（10 ) 大約1 8 0 m m、及高度大約3 0 m Π1之磁鐵*來作為第2磁鐵7 2。 該第2磁鐵72之強度，例如在上端面之表面上*像為100高 斯（gauss)左右° 該第1磁鐵71之内面之磁極、和第2磁鐵72之上端面之磁 極*係相互地呈並不相同；而第1磁趟7 1之外面、和第2磁 鐵72之下端面，係相互地成為並不相同之磁極。在濺鍍室 1中，係設定有圖1所示之磁力線73。 前述之磁場設定用手段7，係在該輔助電極6之内側，形 成有高密度之電漿P’，而捕捉住該電漿中之主要之電子， Μ防止電漿P’之擴散現象發生。當在電漿"中而設定有磁 場之時，則該電漿中之主要之電子，會被磁力線所捕捉注 *因此，可Μ防止電漿P之擴散現象發生。結果*該電賭 密度，會變得比較高。在本實施形態中，係設定有圖1所 示之磁力線73。因此，特別是可Μ防止住該電漿Ρ'朝向著 基板座架5之外側之區域而進行擴散之現象發生。所以> 在該輔肋電極6之內側，能夠維持住高密度之電漿。 在本莨施形態之裝置中，偽設置有電場設定用手段8， 而用來設定該垂直於基板5 0之電場 > 以便於從該形成在輔 助電極6之內側中之電漿Ρ '，吸引出離子，而且使得該離 子，入射至基板50中。該電場設定用手段8，係由該用以 施加高頻電壓至基板50中而藉由該高頻和電漿Ρ’間之作用 而胞加該自偏電壓至基板50中之基板偏壓用高頻電源81所 構成的σ 當藉由該基板偏壓用高頻電源81而施加高頻電壓至基板 本紙張尺度適用中國國家標準（CNS ) Α4規格（2丨ΟΧ 297公釐） --- - i - I 私 mr —- - -iL· 一aJ (請先閱讀背面之注意事項再填寫本页) 452601 A7 B7 五、發明説明（U ) 50中之時，則電漿P'中之帶電粒子，會呈週期性地被拉近 至基板5 0之表面。此時，比起正離子，則會有許多之遷移 率（niobility)比較高之電子*被拉近至基板50之表面。結 果，該基板50之表面，就會變成為與該被餳壓成為負電位 之狀態之相同之狀態。在前述之例子中之基板偏壓用高頻 電源8 1之狀態下，係胞加該平均值為一1 0 0 V左右之偏電壓 至基板5 0中ϋ 該施加有前述之基板偏電壓之狀態，和該在藉由直流二 極放電而形成有電漿之狀態下之陰極尖端區域，係為相同 的；即該陁加有前述之基板偏電壓之狀態》係成為該被設 定在電漿Ρ1和基板50之間而具備有該朗向著基板50圼降低 之電位傾斜度之電場（Μ下，則稱為引出用電場。）之狀態 。該引出用電場，係為垂直地朝向著基板50之電場。 經沪部中央標準局員工消費合作社印裝 (讀先閱讀背面之注意事項再填艿本I) 在本啻施形態之装置中*於濺鍍室1之器壁之内側，係 設置有該用Μ防止該濺鍍粒子附著在並不需要濺鍍粒子之 場所上之防吸附用屏蔽件9。當該濺鍍粒子附著在濺鍍室1 之器壁上之時，則會隨著時間之經過*而堆積出薄膜。當 該薄膜 > 達到某個程度之數量之時，則會由於内部應力之 關係，而使得該薄膜發生剝離現象該剝離掉之薄膜片， 會成為灰塵微粒，而在濺鍍室1内，進行浮游。當該灰塵 微粒到達至基板50之時，就會發生有像局部之膜厚異常之 不良現象。 因此|本實施形態之裝置*係藉由該防吸附用屏蔽件9 ，來覆蓋住該濺鍍室1之器壁之内側，以防止該濺鍍粒子 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X297公釐) ~ 4 5 26 0 t丨 A7 B7五、發明説明（12 ) 經湳部中央標準局tJi工消費合作.社印掣 上 壁 器 在室 著鍍 附濺 件0 屏 3J 附 吸 防 該 該件 著蔽 沿屏 為用 保附 I 吸 狀防 形該 之 0 Λί 狀 形 之 成 構 而 狀 衫 之 壁 器 之 (諳先閱讀背面之注意事項再填寫本頁) 屏離 用剝 附膜 吸薄 防 之 該出 在積 ο 堆 l_h所 止 防 Μ 用 該 有 置 設 像 室 鍍 濺 在 置 設 地 卸 裝 由 自 可 為 係 面 表 之 9 件 蔽 膜室 薄鍍 之濺 著從 附夠 所 能 果也 如 -, 話 且 的 而度 i 厚 凸之 凹度 之程 落 -ΠΊ- 录 生 發 會 達 到 經 已 屏 用 附 吸 防 該 下 取 件 蔽 著 接 作 之 置 裝 , 鍍 90濺 件之 蔽態 屏形 用施 附實 吸本 防就 的而 新 ’ «IL 上 換 交 而 圖 用 使 閥 閘 之 出 示 顯 未 並 上 式 圖 該 過 通 。 儉 ο S' 5 說板 作基 來 氣 tF 直 架 一 座而 板 ’ 基氣 在排 置行 載進 而 ， ’ 内 勾 1 1 室 室 鍍 鍍濺 濺該 至於 入對 搬地 被先 ’ 預 \ί- e ， lv且 a V 、3 後 然UPS from the 'produced by the Ministry of the Ministry of low Γ) down to the degree of flia speed 11 film 01 into (C the instrument will be able to determine this in the product' heap will be grains' plated splash particles should be plated off There is damage due to the loss, and the force will also be reduced-this is due to the lowering in this method due to the plating 'splashing away from the distance between the pressure plate and the base, and the target should be long and long; And, the question that can be asked about the quilt is only Γ) 逑 te XL ru image sp at BΘ ΤΗ t 3 ο m produces 11 questions 01 (C question method of plating low spatter drop straightness speed the film 'into K The right-left plating splash booth of the institute is far lower than the horizontal and vertical. It is necessary to make the product ready for use. The method of making the plating splash chamber far lower should be clear as the answer to the question has been resolved. The pair of needles is enough to tk and 埒 M, and the state of knowledge is based on the original formula. Covering the bottom of the well, the hole in S is 4 The skill of the technical work is the rate of the problem. The solution to the problem is to do it first (read the notes on the back before you fill out this page). The title of the paragraph is tTTIH. In order to ask Di Fanli special source S to use the plating method to install the plating of the splash chemical 11¾ 嚭 之 明 发 's record of electricity and assistance. The auxiliary path has a way to make it possible K Electric is set to fly, go to M's and go to the 'sub-position', and the particle target is plated with a cursor; the power of the source floats between the power and electricity. Application, the auxiliary is targeted, the target is surrounded by the package, and the package is moved to the electrode system, and the electric and auxiliary equipment are provided in the system. The target is the target of the young bird. The reason is to apply the power to the pulp, the side, the other side. The size of the paper is applicable to the Chinese National Standard (CNS) A4 (2IOX297 mm) 6 -P60 1 A7 B7 The consumption cooperation of employees of the Central Standards Bureau of Dibu The instructions (4 1 I have the sputtering chamber with a row of m% Μ), and the sputtering chamber is equipped with: the target 1 1 1 placed in the sputtering chamber and the target for sputtering with Μ The 1 I power supply for sputtering and the gas AM used to introduce gas into the sputtering chamber. Please read the 1 I method first. And the ion sputtering device can be equipped with the power for reading. Back 1 1 I The substrate is held and fixed on the substrate holder at the position where the 1I particles I incident by the sputtering process are emitted from the target. 0 Matters 1 i 1 1 1 The problem described is therefore the scope of the patent application of the present invention. The ionization sputtering device of the invention described in item 2 of the invention. The sputtering power source I 1 I 9 times is applied to the m On target. 0 and an auxiliary electric 1 1 | electrode is provided to surround the flying path of the sputtered particles between the target and the substrate 0 and 1 1 and an auxiliary high-frequency power source is connected to the auxiliary rib electrode and 1 order is applied The high-frequency power of the same frequency as the power source for m plating is used. In addition, the auxiliary electrode 1 1 is capacitively combined with the target, and a plasma λ 1 I is formed on the inner side of the auxiliary electrode. In order to solve -1 刖 逑The problem is therefore that the present invention requests the invention described in item 13 of the patent. The ionized sputtering device of the invention is provided with an electric field setting 1 1 by means for setting the electric current perpendicular to the substrate so as to be easily accessible from the shape i. The plasma generated in the inside of the auxiliary electrode V attracts ions and causes the 1 I ions to be radiated into the substrate. 1 1 I In order to solve the aforementioned problems, the patent of the present invention The ionization sputtering device according to the invention described in item 1 1 4 is provided with a magnetic field setting means on the inside of the auxiliary rib electrode 1 1 to set the magnetic field 0 1 I for capturing the plasma 1 I in order to Solve the aforementioned problems. Therefore, the scope of the present invention is patented. The first paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm). SO 1 A7 B7 was printed by the Ministry of Central Bureau of Standards, Consumer Consumption Cooperative. Explanation (5 1) The ionization sputtering device of the invention described in item 5, wherein the auxiliary electrode ϊ 1 1 1 is formed of a magnetic body or a magnet, and f is used for setting the aforementioned magnetic field 1 | Please 1 means Part or all of it is composed of the auxiliary rib electrode. 0 Read 1 I In order to solve the aforementioned problems, the invention is described in the patent application scope of the patent application range 1 1 I 6 in which the ionization sputtering device is described. Note 1 of the auxiliary electrode I means that the I surface is the same material as the target, or a material that does not deface the substrate. 1 I and 1 f are filled in. In order to solve the aforementioned problems, the present invention φ Please cover the inventions described in item 1 I7 on page 1 of the patent scope, which are covered by the inventions in items 1 Η 2 3 and 1 1 I 4 of the aforementioned patent application scope 1 1 Please apply for the scope of the patent. [The sputtering method described in item S shall be used to set the auxiliary electrode capacitor and the auxiliary electrode capacitor 1 to cover the flight path of the sputtering particles between the target and the substrate. The high-frequency power applied to the aforementioned target and also 1 1 I keep the pressure in the sputtering chamber at 10 DlT or Γ n -100 ΙΏ To rr range 1 pressure In order to solve the previous problem, the sputtering method described in the scope of patent application 1 1 item 9 of the present invention is used to enclose the -h · sputtering particles between the target and the 1 I substrate. The flying path is set to -V. The auxiliary electrode has a capacitance of 1 1 and I is combined with the high-frequency power applied to the target of the front ridge and moved 1 1 so that the pressure in the sputtering chamber during the m operation is maintained at the Comparing the distance between the target and the substrate from 1 to 1, the pressure of the m-coated particles can be averaged from ί t under the pressure that the stroke can be shortened sufficiently Cl Ι (Implementation Mode of Invention) 1 This paper size applies Chinese national standard Rate {CNS) A4 specification (210X 297 mm) 8 a 45 260 A7 B7 V. Description of the invention (6 After the Ministry of Consumers ’Central Standards Bureau, M Industrial and Consumer Cooperatives, India Fanfan K, the implementation of the present invention will be described . First, a description will be given of the first actual form of the invention of the sputtering apparatus corresponding to item 1 of the scope of patent application of the present invention. FIG. 1 is a schematic front view showing the structure of a sputtering apparatus according to a first embodiment of the invention corresponding to the first item of the patent application scope of the present invention. The sputtering apparatus shown in FIG. 1 is provided with The sputtering chamber 1 having an exhaust system 11. The sputtering chamber 1 includes: a target 2 installed in the sputtering chamber 1; a sputtering power source 3 for performing sputtering treatment on the target 2; and a gas required by the K Then, a gas introduction means 4 is introduced into the sputtering chamber 1. The sputtered particles * emitted from the target 2 by the sputtering process are incident on the substrate 50 held and fixed on the substrate holder 5. The sputtering chamber 1 is a closed container provided with a gate valve which is not shown in the drawings. The sputtering chamber 1 is a stainless steel metal product and is electrically grounded. The exhaust system 11 is a multi-stage vacuum exhaust system having a turbo molecular pump and a diffusion pump. The exhaust system 11 exhausts the inside of the sputtering chamber 1 and exhausts the air to about 10 to 8 Torr. The exhaust: System 11 is equipped with an exhaust speed adjuster * not shown on the drawings with variable orifice plates (var ί ab 1 e — 〇rifice), so it can be used to adjust its exhaust The speed 1: 1 target 2 is a circular plate with a thickness of 6miB · and a diameter of about 300 ειβ. The target 2 is mounted on the sputtering chamber 1 through a target holder 21 and an insulator 22 made of metal. Behind Target 2 • A magnet assembly 30 is provided, and M is used for the paper size. The Chinese National Standard (CNS) A4 specification (210X297 cm) is applied. (Please read the precautions on the back before filling this page) Order 9 A7 B7 45 260 1 V. Description of the invention (7) (Read the precautions on the back before filling in this page) The magnetron sputtering operation. The magnet assembly 3 0 * is composed of a center magnet 31 and a peripheral magnet 3 surrounding the center magnet 31 with M 2, and a circular plate-shaped one that connects the center magnet 31 and the peripheral magnet 32 with K. The yoke plate 33 is formed. Although each of the magnets 31 and 32 is a permanent magnet *, the central magnet 31 and the surrounding magnet 32 may be constituted by using an electromagnet *. The sputtering power source 3 is formed by adding a certain high-frequency power to the target 2. If it is more specific *, the sputtering power source 3 is based on a power of about 6k W *. Supply high frequency of about 13,56MHz to target 2. A matching device (κι t c h e r) not shown in the figure is provided between the sputtering power source 3 and the target 2, and K performs the impedance matching operation. The gas introduction means 4 * Pseudo-high pressure gas cylinders 41, M, which are used to store a gas for sputtering discharge like argon (Af), and the high-pressure gas 茼 41 and the sputtering chamber 1 which are connected by the M The pipes 42 and K, and the valve 43 and the flow regulator 44 provided on the pipe 42 are configured. The printed substrate holder 5 of the Central Standards Bureau of the Ministry of Economic Affairs and Consumer Cooperatives is hermetically arranged in the sputtering chamber I through the insulator 5 3; the substrate holder 5 > is parallel to the target 2 and Hold the injection substrate 50 with M fixed. The substrate holder 5 is provided with an electrostatic attachment mechanism (not shown in the drawing), and the substrate is attracted to the substrate 50 by the electrostatic action. The electrostatic adsorption mechanism is provided in the substrate holder 5 and provided with an adsorption electrode > and a DC voltage is applied to the adsorption electrode. A heating mechanism (not shown) is provided in the substrate holder 5 so that the substrate 50 is heated during the film formation operation, and the film formation operation can be performed very efficiently. A considerable feature of the device of this embodiment is that the paper size is set to assist the Chinese national standard (CNS) Α4 specification (210X297 mm) 10 45 260 1 A7 B7 printed by the Consumer Cooperatives of the Central Bureau of Standards Bureau of the Ministry of M 5. Description of the invention (8 1 .1 I electrode 6 M surrounds the flying path of the sputtered particles between the target 2 and the substrate 50 1 1 1 diameter 0 1 I auxiliary electrode 6 Target 2 Κ and substrate 5 0 t —— Please read 1 I and set it on the same glaze. The auxiliary electrode 6 is the thickness of the board 2ιτ κι. Left read the back 1 1 I Right cylindrical In addition, the inner diameter of the auxiliary electrode 6 is about 3 5 0 ~ 1 winter 1 I about 1 400m m and the height is about 50 ffi. Matters \ I 1 1 The auxiliary electrode 8 is transmitted through the insulator 6 1 and remains fixed. In the sputtering chamber 1, fill in this shirt. Compared with the plasma P formed by sputtering discharge, the auxiliary rib electrode 6 and 1 I f become floating potentials. 1 I 1 When the high-frequency is applied to the target 2 by the sputtering power source to form electricity 1 1 paste P, the auxiliary electrode 6 will pass through the capacitance of the discharge space-and L order and target 2 Capacitive bonding '| The auxiliary electrode 6 will change periodically with the potential of the target 2 1 1 The potential of the auxiliary rib electrode 6 will also change periodically on the auxiliary electrode 1 1 A high-frequency electric 1 1 I field 0 is set inside 6 by the high-frequency electric field, and a plasma P ′ 0 1 1 is auxiliaryly formed inside the auxiliary rib electrode 6 by the sputtering The plasma P formed by the plating discharge and the plasma P formed by the action of the I of the auxiliary rib electrode 6 are in a state of continuous success in space-kk 1 I and the external appearance and There is a state distinguished by the M method. It can also be found that the plasma P formed by the 1 1 I sputter discharge will diffuse into the space inside the 1 1 side of the auxiliary electrode 0 regardless of the plasma P The diffusion phenomenon, or the state of plasma P ′ and plasma P, which is formed by another 涸 1 1, is essentially not the same as 1 I. 0 In the state where the diffusion phenomenon of plasma P occurs | In the place where the plasma P is generated, I can also use the role of the auxiliary electrode 6, and the paper size of this paper applies the Chinese National Standard (CNS) Α4 specification (2 丨 0 × 297). -11- 45 260 1 A7 Printed by B7, member of the Central Government Bureau of the Ministry of Consumer Affairs, B7. V. Invention Description (9) Maintain a relatively dense plasma. By the action of the auxiliary electrode 6, the formation of another plasma is not fundamentally different. In the device shown in Fig. 1, a magnetic field setting means 7 is provided inside the auxiliary electrode 6, and M sets the magnetic field for capturing the plasma. The magnetic field setting means 7 is a first magnet 71, M arranged in the sputtering chamber 1 by surrounding the outer side of the auxiliary rib electrode 6 with M, and the first magnet 71, M arranged below the substrate holder 5 2 magnets 72. The first magnet 71 * is a cylindrical permanent magnet arranged on the same axis as the auxiliary electrode 6, and inside and outside of the first magnet 71, magnetic poles different from each other appear. The first magnet 71 is mounted on the sputtering chamber 1 through a metal holding and fixing member 7] 1 *. Therefore, the first magnet 7 1 becomes an electric ground potential. The size of the first magnet 71 varies with the size of the target 2 and the substrate 50. When the target 2 with a diameter of 300 «! ® is used, the first magnet 71 will have an inner diameter of about 350 snm, an outer diameter of about 400 miB, and a height of about 40 m. In addition, the first magnet 71 is, on the surface of the inner surface, like a substance having a strength of about 500 gauss. The second magnet 7 2 is larger than the diameter of the substrate holder 5. A smaller cylindrical permanent magnet. The second magnet 7 2 is arranged concentrically with the first magnet 7 1. In the second magnet 72, magnetic poles different from each other appear on the upper end face and the lower end face of the second magnet 72. The size of the second magnet 72 changes with the size of the substrate 50. In the state of using a substrate with a diameter of 8 inches and 50 *, the inner diameter of about 140 mm and the outer diameter will be used. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (2 丨 OX 297 cm) (read Read the notes on the back before filling in this page) —12-4 5 260 1 A7 Printed by the Consumers Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs B7 V. Invention Description (10) Approx. 180 mm and height 30 m The magnet * of Π1 is used as the second magnet 72. The strength of the second magnet 72 is, for example, on the surface of the upper end face * like about 100 gauss °. The magnetic pole on the inner face of the first magnet 71 and the magnetic pole on the upper face of the second magnet 72 are mutually present. It is not the same; the outer surface of the first magnetic path 71 and the lower end surface of the second magnet 72 are mutually different magnetic poles. In the sputtering chamber 1, magnetic field lines 73 shown in Fig. 1 are set. The aforementioned means 7 for setting a magnetic field is formed inside the auxiliary electrode 6 with a high-density plasma P ', which captures the main electrons in the plasma, and prevents the diffusion of the plasma P'. When a magnetic field is set in the plasma, the main electrons in the plasma will be captured by the magnetic field lines. * Therefore, the diffusion of the plasma P can be prevented. As a result, * the density of e-gambling becomes higher. In this embodiment, the magnetic field lines 73 shown in Fig. 1 are set. Therefore, in particular, it is possible to prevent the plasma P ′ from spreading toward a region outside the substrate holder 5. Therefore, inside the auxiliary rib electrode 6, a high-density plasma can be maintained. In the device according to this embodiment, an electric field setting means 8 is provided pseudo to set the electric field perpendicular to the substrate 50 > so as to facilitate the plasma P ′ formed from the inside of the auxiliary electrode 6, Ions are attracted, and the ions are made incident on the substrate 50. The means 8 for setting the electric field is used to apply a high-frequency voltage to the substrate 50 and to apply the self-bias voltage to the substrate bias in the substrate 50 by the action between the high-frequency and the plasma P ′. Σ formed by the high-frequency power supply 81 When high-frequency voltage is applied to the substrate by the high-frequency power supply 81 for biasing the substrate, the paper size applies the Chinese National Standard (CNS) A4 specification (2 丨 〇 × 297 mm) --- -i-I private mr —---iL · a aJ (please read the precautions on the back before filling this page) 452601 A7 B7 V. In the description of the invention (U) 50, the charge in the plasma P 'will be charged. The particles are periodically drawn to the surface of the substrate 50. At this time, many electrons * having higher niobility are drawn closer to the surface of the substrate 50 than positive ions. As a result, the surface of the substrate 50 becomes the same state as the state where the sugar pressure becomes a negative potential. In the state of the high-frequency power supply 81 for substrate bias in the foregoing example, the cell adds the average bias voltage of about 100 V to the substrate 50 to the substrate 50. The state is the same as the cathode tip region in the state where the plasma is formed by the DC diode discharge; that is, the state where the aforementioned substrate bias voltage is added is the state set in the plasma Between P1 and the substrate 50, there is provided a state of an electric field (hereinafter referred to as an extraction electric field) for the potential gradient which decreases toward the substrate 50 基板. The extraction electric field is an electric field which is perpendicular to the substrate 50. Printed by the Consumers' Cooperative of the Central Bureau of Standards of the Ministry of Shanghai (read the precautions on the back and then fill out this I) In the device of this application form * It is installed inside the wall of the sputtering chamber 1 The anti-adsorption shield 9 prevents the sputtered particles from adhering to a place where the sputtered particles are not needed. When the sputtered particles adhere to the wall of the sputtering chamber 1, a thin film is deposited over time *. When the number of films > reaches a certain level, the film will peel off due to the internal stress. The peeled film pieces will become dust particles in the sputtering chamber 1. Floating. When the dust particles reach the substrate 50, a defect such as a local film thickness abnormality occurs. Therefore, the device of this embodiment * covers the inside of the wall of the sputtering chamber 1 with the anti-adsorption shielding member 9 to prevent the sputtering particles. The paper size applies the Chinese National Standard (CNS) Λ4 Specifications (210X297 mm) ~ 4 5 26 0 t 丨 A7 B7 V. Description of the invention (12) The tJi industry and consumer cooperation of the Central Standards Bureau of the Ministry of Economic Affairs. To prevent this piece of cover along the screen is to attach I. To prevent the shape of the 0 Λί shape of the structure and shape the wall of the shirt (谙 first read the precautions on the back before filling this page) The peeling film absorbs the thin film, and it should be stored in the stack. The pile l_h is prevented by the M. Use the installed image room to splash and unload at the installation place. The 9 pieces of masking film room can be used for the surface coating. From the point where the fruit is enough, such as-, then the degree of the i-thickness of the convexity of the process falls -ΠΊ- Recording hair will reach the installed device that has been screened with a suction to prevent the lower part from being hidden, The shielded screen shape of the 90-plated spatter is new and effective. ‘« IL is switched and the map is displayed by using the valve gate and the above diagram should be passed. Jian ο S '5 said that the board is made of base gas tF, and the board' base gas is carried in the row, and then, the inner hook 1 1 chambers are plated and splashed, and they should be moved to the ground before being moved. -e, lv and a V, 3 then

室 鍍 濺 該 ο 段至 止手， 為用體 右入氣 左導用 ΓΓ體程 To氣製 9 該之 \ 動 等 10啟Γ) 到就(A 上 之 後 之 ο 5 板 基 該 上 置 載 在 該 人 導 而 氣0 像 之 量 M 定 室 壓 鍍 之 濺内 該 圍 得範3 使之源 Μ 右電 , 左 用 器ΓΓ鍍 整To濺 調 〇> 該 度 qis 速 啟 氣ΓΓ， 排To下 nu 之 之 1 ο 力 铳？ 壓 在 系 持 谁 0 ^ a 該 仕 制可。 控]-下 内 1 力 且 並 砠¾ a ^ 0 頻 電 高 CO 放 用源鍍 壓電濺 饍用管 板鍍控 基濺磁 該該生 動由產 啟藉以 ， 中 2 靶 標 至 壓 電 頻 高 之 定 現 電 放 鍍 濺 管 控 磁 該 由 藉 象極此 電 助 ’ 輔合 和結極 ί 性電 容 助 電輔 0行至 Ρ進送 漿而傳 電 ， 會 有 量 ， 成容頻 形電高 ，之之 方間中 下空 之 電 放 過 透 Μϋ Tm( 靶 標 IE1BS 過 slji_ 而員該 靶 標 該 因 中 結 本紙張尺度適用中國國家標準（CNS ) A4规格（2丨OX 297公釐） 15 452601 A7 經濟部中央標率局員工消費合作社印製 B7五、發明説明（13 ) 果，在輔肋電極6之内側，就形成有電漿P’。 藉由該基板偏壓用高頻電源81，而施加該基板偏電壓至 該基板5 0中。結果，在電漿P '和基板5 0之間，設定有該引 出用電場。 該由標靶2所發射出之濺鍍粒子，會到達至基板5 0，而 在基板5 0上，堆積出該由標靶2之材料所組成之薄膜e當 薄膜到達所要求之厚度之時，則分別地停止該濺鍍用電源 3、基板偏壓用高頻電源31、Μ及氣體導人用手段（氣體導 人用系統）4之動作。接著 > 再一次地對於該濺鍍室1内， 進行排氣作業之後*由該濺鍍室1，取出基板50。 在製造該障蔽膜之狀態下，係使用钛金屬製之標靶2。 在最初，僖導入氬氣（Ar)*來作為製程用氣體，Κ形成I太 薄_。然後，再導入氮氣（Ν2 )，來作為製程用氣體，以使 得鈦和氮氣發生反應。藉由前述之反應，則可Μ得到該在 鈦薄膜之上而層合有氮化钛薄膜之障蔽膜。 許多之該由標靶2所發射出之濺鍍粒子*在通過電漿Ρ_ 中之時，會發生離子化作用*而成為離子化濺鍍粒子。可 Μ藉由該引出用電場，而非常有效率地從電隳Ρ ^中，吸引 出該離子化濺鍍粒子，而且能夠極有效率地使得該離子化 濺鍍粒子 > 入射至基板50中。 該離子化濺鍍粒子，可以非常有效率地一直到達至該形 成於基板50表面上之孔洞之内部為止。因此*非常有肋於 該對於孔洞内而呈琨出相當良好之底面有效覆蓋範圍率地 進行成膜作業。關於這點，則在Κ下之敘述中，作更詳细 一 16 一 本紙張尺度速用中國國家榇準（CNS ) Λ4規格（210X297公釐） (誚先閱讀背面之注意·事項再填寫本頁) 經濟部中央標準局員X,消費合作社印製 5 260 1 A7 B7五、發明説明（u ) 之說明。 圖2係為一進行堆積之薄膜之剖面概略圖，而用K說明 該圼離子化之濺鍍粒子之作用。 就正如圖2(a)所顯示的，在該形成於基板50表面上之微 细之孔洞5 0 0内而堆積出薄膜5 1 0之時，則會有該薄膜5 1 0 非常旺盛地堆積在孔洞5 0 0之開口之邊緣5 0 3之部份上之傾 向產生《該非常旺盛地呈突出之部份之薄膜510*被稱為 「懸垂體（overhang)」。當形成有懸垂體（over hang)之時 ，則孔洞5 0 0之開口 •會變得比較小，因此•就外表上來 看的話，則該縱橫比，會變得比較高。所Μ，該可以到達 至孔洞500内之濺鍍原子的數量，會變得比較少，結果導 致該底面有效覆蓋範圍率會降低。 在這裡•就正如圖2 ( b)所顯示的，當該離子化濺鍍粒子 2 0，到達至基板5 0之時，則該離子化濺鍍粒子2 0 *會再一 次地對於該懸垂體部份之薄膜5 1 0，進行濺鑛處理，而使 (請先閱讀背面之注意事領再填窍本買) *1Τ 膜 薄 之 份 δ 體 垂 懸 ’ 該 ο 得 5 使 膜 * 薄用 之作 份之 ρ ο 音 2 體子 垂粒 懸鍍 該濺 得化 象 現 塌 崩 生 發 子會 aft 0 該10 於 由 度 芻 濺 化 子 雜 該 此 因 内 ο ο 5 同 至 入 落 時 同 小 變 □ 開 之 ο ο 5 同 孔 該 止 洞 在 積 4tc 堆 膜 薄 該 進 促 以 可 也 子 防 Μ 可 , 用 ο 乍 2 子積 粒堆 鍍膜 濺薄 化 之 子 上 離面 該底 垂粒 懸 鍍 之 濺 樣化 這子 ,3c 像翮 ο 該 率由 圍藉 範M 蓋 可 覆僅 效不 有 了 面除 底 ， 該象 高現 提鍍 夠濺 能再 . 之 果份 结部 ο 體 入象 導現 而鍍 電 濺 放再 鍍 之 濺份 行 部 進體 了垂 為懸 該該 由生 藉產 夠來 能 ， 選子 ， 翹 外之 之體 用M 作 用 之程 o UV 2 象 子 之 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ 297公釐） 17 45 260 1 A7 B7 經濟部中央標準局員工消費合作社印繁 五、發明説明（15 ) 在本實腌形態之裝置中*係藉由該電場設定用手段8， 而朝尚著基板50並且垂直於基板50之方向上，設定該用Μ 降低電位之引岀用電場。該離子化濺鍍粒子20，係被該引 出用電場所導引而相當容易地垂直人射至基板50中。該離 子化濺鍍粒子20*可以非常容易地到達至該相當深之孔洞 5 0 0之底面為止。至於這點，也可以非常有助於提高該底 面有效覆蓋範園率。 當該供應至標靶2之高頻電力為13.56MHz、6kW，而該基 板偏壓用高頻電源81施加至標靶中之高頻電力為13.56MHz 、200W，並且該濺鍍室1內之壓力為30inT〇rr之時，則可以 對於該縱横比4之孔洞，以5 0 %左右之底面有效覆蓋範圍 率*來進行該成膜作業。 前述之成膜壓力之條件，就為了得到適當之離子化濺鍍 粒子之效果而言，係是相當重要的。當該成膜壓力超過 10 niTorr之時，就可Μ充分地進行該濺鍍粒子之離子化作 用。但是•由於在濺鍍粒子之飛行路徑上*存在有許多之 氣體分子的關偽，所Μ會有該使得圼離子化之濺鍍粒子發 生有散亂琨象而無法充分地到達至基板5 0為止之問題產生 。因此* 一般來講，最好設定該成膜壓力係在IOibToΓΓ至 ΙΟΟιβΤογγ範圍内。 也必須使得前述之成膜壓力之條件、和離子化濺鍍粒子 之平均自由行程間之關係，成為在最適當之狀態下。為了 得到適當之離子化濺鍍粒子之作用，因此，當由標靶2發 射出該濺鍍粒子而使得該濺鍍粒子到達至基板50之時，就 {請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨0X297公釐） 18 — 2 60 1 A7 B7 經满部中央標準局員工消費合作社印掣 五、發明説明 (16 ) 1 1 | 必 須 相 當 高 之 機 率 而 使 得 該 濺 鍍 粒 子 能 夠 和 電 子 及 1 1 t 離 子 發 生 衝 撞 0 所 K 比 較 起 該 標 靶 2和基板50間之距 I | 離 該 能 夠 充 分 地 m 短 該 m 鍍 粒 子 之 平 均 白 由 行 程 之 動 作 諸 先 閱 t 1 t 偽 是 非 常 重 要 的 〇 ή 背 1 1 I 此 時 之 平 均 自 由 行 程 若 說 得 更 正 確 一 點 係 為 該 濺 鍍 之 注 1 I 意 1 粒 子 衝 撞 到 該 電 漿 中 之 離 子 時 之 平 均 白 由 行 程 但 是 該 事 項 1 I 再 1 1 平 均 白 由 行 程 大 致 來 說 也 可 以 近 於 該 製 程 用 窗 體 群 ίξ 本 ’衣 之 間 之 平 均 自 由 行 程 0 至 於 這 個 理 由 係 因 為 在 該 製 程 用 頁 1 1 氣 not 腊 群 之 間 而 頻 繁 地 發 生 有 衝 撞 之 時 該 濺 鍍 粒 子 也 會 頻 I 1 I 繁 地 衝 撞 到 該 製 程 用 氣 體 的 緣 故 0 \ 1 當 由 前 述 之 簧 施 形 態 之 例 子 而 來 作 說 明 之 時 如 果 該 標 1 訂 靶 2和基板50間之距離為120 拉扭 左 右 而 該 成 膜 壓 力 為 30 m 1 1 To Γ Γ 的 話 則 該 平 均 i 由 行 程 會 成 為 在 5 ΙΗ in Μ下 、因此 i [ ， 比 較 起 該 標 靶 2和基板50間之距離 該平均自由行程 [ 1 I 已 經 有 充 分 地 進 行 m 短 〇 所 以 該 濺 鍍 粒 子 也 會 頻 繁 地 1 和 離 子 發 生 有 jse,- 衝 撞 現 象 而 能 夠 促 進 該 離 子 化 作 用 0 1 1 魷 正 如 前 面 所 敍 述 的 本 實 施 形 態 之 裝 置 能 夠 非 常 有 1 I 效 率 地 使 得 該 濺 鍍 粒 子 發 生 離 子 化 作 用 而 使 得 該 濺 鍍 ! 1 粒 子 垂 直 地 人 射 至 基 板 50 中 本 實 形 態 之 装 置 係 可 1 1 I >λ igj. 對 於 該 具 有 相 當 高 之 縱 横 比 之 孔 洞 Η 非 常 高 之 底 面 有 1 1 效 覆 蓋 範 圍 率 來 進 行 該 成 膜 作 業 0 本 實 形 態 之 裝 置 f 1 1 利 用 該 投 入 至 標 靶 2中之電力之- -部份 來形成該用於 1 i 離 子 化 作 用 之 電 漿 P ' 〇 因 此 本 實 施 形 態 之 装 置 並 不 需 i I 要 另 外 一 涸 電 源 所 以 就 成 本 方 面 而 言 係 是 非 常 有 利 的 1 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X 297公釐） 19 45 260 t A7 經消部中央標準局員工消費合作社印繁 B7五、發明説明（17 ) 。在前逑之條件中，係推定假設有：該施加至標靶2中之 高頻電力之30¾左右，會被傳送至該輔助電極6中。 在前述之實施彤態之裝置中*由於該輔助電搔6曝露在 電漿P '中》所Μ很有可能該輔助電極6本身*也會被進行 濺鍍處理。因此，當該輔助電極6被進行濺鍍處理之時， 則會有該被濺鍍處理過之輔助電極6到達至基板5 0而污損 到該基板5 0之問題產生。 為了解決該問題，所Μ最好可以使用該與標靶2為相同 之材料、或者近似於標靶2之材料*來形成該輔肋電極6。 在標靶2為鈦金鼷製之狀態下，則也可Μ使用钛或者鈦合 金而來形成該輔助電極6。在這裡，所謂「近似於標靶材 料之材料」，係意味著所諝「並不會污損到基板之材料」 可以藉由該與標靶2為相同之材料，來被覆住該輔助電 極6之表面。在標靶2為鈦金屬製之狀態下•則在該輔肋電 極6之表面上，形成有100w左右之厚度之鈦金屬膜。可Μ 藉由電解電鍍或者濺鍍處理，來進行前述之被覆作業。如 果隨著該成膜處理之作業次數之增加而可能會露出底材之 材料的話，就可以交換新的輔助電極6。 在該輔助電極6之表面*施加Μ例如像鋁陽極處理之耐 電漿化作用之表面處理，就可Κ並不會因為電漿Ρ'之作用 而被進行濺鍍處理。 在前述之磁場設定用手段7中，該被設定成為用來連接 第1磁鐵71和第2磁鐵72之磁力線*則會由電漿Ρ’開始而到 達至基板5 0。該磁場設定用手段7，係適合被使用來作為 (誚先閣讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) Α4规格（210X 297公釐） -20 - 45 260 1 A7 B7 經消部中央標苹局負工消費合作社印製 五、發明説明 (18 ) 1 從 電 漿 Ρ , 中 而 吸 引 出 電子 和 離子 0 此外 當該 電子 對 於 基 1 1 I 板 50之 電 子 撞 擊 發 生有 問 題之 時 ，就 正 如Μ 下所 敘 逑 的 1 1 J 可 Μ 改 變 該 磁 場 設 定用 手 段7 請 先 1 1 圖 3係為顯示出該變更該在圖1 之 装置 中 之磁 場設 定 用 手 Μ 讀 1 ! 1 j 段 之 構 成 之 變 化 例 的 前視 概 略圓 〇 在該 Ifij 3之例子中 1 I 第 1磁鐵71之内面和第2磁 鐵 72之 上 端面 ί系為 相同 的 而 成 $ 項 1 I 為 例 如 S極 而第1 磁 鐵71 之 外面 和 第2磁鐵72之下端面 再 1 係 為 相 同 的 而 成 為 洌 如Η極t 1在濺鍍室1 中 -係 設定 有 圖 3 寫 本 頁 展 1 所 示 磁 力 線 74 « 在 該圖 3所示之磁場形狀中 由於該從 1 1 電 漿 Ρ ' 開 始 而 直 接 地 到達 至 基板 50 之磁 力 線比 較少 所 VX | ， 該 由 電 漿 中 而 吸 引 出電 子 和離 子 之效 果 *會 比起 圖 1所 1 訂 示 之 狀 態 遷 來 得 更 少0 但 是， 此 時， 例 如像 該由 於 電 子 1 I 之 撞 擊 所 造 成 基 板 50之 損 傷， 則 會變 得 比較 少 。 1 1 接 著 就 該 對 懕 於 本發 明 之申 請 專利 範 圍第 2項之濺鍍 ! ί 裝 置 之 發 明 的 第 2實施形態 來作說明 >画4係、 為顯 示 出 該 1 對 應 於 本 發 明 之 申 請 專利 範 r=ta 圍第 2項之發明之第2實 施 形 態 1 I 中 之 濺 鍍 装 置 之 構 成 的前 視 概略 圖 1 1 I 該 第 2實施形態之裝置 和第1 實 施形 態 之裝 置間 不 同 1 i 處 係 為 該 施 加 筒 頻 電力 至 該輔 助 電極 6中之做法 >在該 1 1 輔 助 雷 極 6 係連接有輔助用高頻電源6 2 、而輔肋用高頻 1 1 電 源 62 係 為 頻 率 400kHz 飞 輸出 功 率500W左右 〇 ! Ι 該 輔 助 用 高 頻 電 源 62 > 偽 藉由 同 心軸 電 纜線 等之 傳 送 線 1 1 I 63 而 連 接 至 該 輔 肋 電極 6 並且 該同心軸電纜線等之 ί I 傳 送 線 63 則 透 過 該 圖式 上 並未 顯 示出 之 絕緣 材料 而 圼 1 1 本紙悵尺度適用中國國家標隼（CNS ) A4規格（210X297公釐） -2 1 - 4 5 2 6 〇 t a? B7 五、發明説明（19 密閉地貫通過該濺鍍室1 雖然於本實施形態中*係在該 輔肋電極6之上端面，連接有該傳送線63，但是，也可K 在該輔助電極6之外側面等處，連接有該傳送線63。 也可以採用Μ下所述之構造：該使得其用以保持固定住 該輔助電極6之絕緣體61，成為管狀，並且在内部中設置 有同心軸電纜線，Μ連接至該輔助電極6之構造；以及， 該藉由可Μ用於傳送高頻之同心軸管等，以進行該輔肋電 極6之保持固定作業之構造。在該同心軸管固定於濺鍍室1 之狀態下|則該同心軸管和濺鍍室1 >會成為絕緣狀態。 在該第2霣施形態中，則可以自由地切換高頻電壓和負 直流電壓，而施加至標靶2中。在標靶2，係連接有該用Μ 腌加高頻電力之第1濺鍍用電源3 4、和該用Μ施加負直流 電壓之第2濺鍍用電源35。藉由該切換器36，而可Μ自由 地選擇任何一邊之濺鍍用電源。 經滴部中央標苹局員工消費合作社印製 (請先Μ讀背面之注^^項再填寫本頁) 該用Μ施加高頻電力之第1濺鍍用電源34，則可Κ使用 該與前述之第1實施形態中之濺鍍用電源3為相同之鍍用 電源。第1濺鍍用電源34、和輔助用高頻電源62，必須要 能夠施加出（輸出）相同頻率之高頻。此外，該作為第2濺 鍍用電源3 5，則必須使用該能夠施加出（輸出）一6 Ο Ο V左右 之電壓之濺鍍用電源。' 在該第2實腌形態中*當使用第1濺鍍用電源34而施加高 頻電壓至該標靶2中之時*則該標靶2和輔肋電極6，會透 過該放電空間之電容量，而進行電容性結合，因此，可Κ 非常有效率地在該輔助電極6之内側，形成有電漿Ρ %在 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X297公釐） 22 452601 A7 B7 五、發明説明（2〇 經濟部中央標隼局負工消f合作社印製 該實施彤態中，由於必須使用該輔肋用高頻電源62，因此 會有成本比較高之缺點存在，但是，卻能夠形成有密度更 高之電漿P '。结果，可以提高該濺鍍粒子之離子化效率。 在與第1實施形態為相同之壓力條件下，對於該縱横比4之 孔洞，進行濺鍍處理，則可K得到大約6 0 %左右之底面有 效覆蓋範圍率。 接著，就該對應於本發明之申請專利範圍第5項之濺鍍 裝置之發明的第3實施形態，來作說明。圖5係為顯示出本 發明之第3實施形態中之濺鍍裝置之構成的前視概略圖。 該窖施形態之裝置和前面所逑之各個實胞形態之裝置間 之不同處，即該輔肋電極6係構成為該磁場設定用手段7之 一部份之作法。該輔肋電極6之靠近基板座架5部份之大約 一半之部位6 0 ]，係由磁性材料所構成的（Μ下，刖稱為磁 性體部。）。該磁性體部6 0 1，條由磁性不锈鋼、或者該在 表面上而進行有電鍍鎳之防蝕處理之鐵材所形成的。 在基板座架5之下方，係設置有該與第1實施形態中之第 2磁鐵72為相同之輔助用磁鐵75。該輔助電極6之磁性體部 601，係形成有該藉由這個輔助用磁鐵所造成之磁場之磁 路 > 同時•該輔肋電極6之磁性體部601，也會隨著時間之 增加而發生磁化作用，因此，該輔助電極6之磁性體部601 ，會和第2磁鐵75，一起構成該磁場設定用手段7。 即使在該第3實施形態中，由於也和圔1所示之狀態同樣 地，係可Μ在該輔肋電極6之內側，捕捉住電漿Ρ '，所Μ 可Μ得到相當高密度之電漿？_，而更進一步地提高該濺鑛 (請先閲讀背面之注意事項再填寫本頁} -5 本紙張尺度適用中國國家榇準（CNS ) Α4規格（2Ι0Χ29·；公釐） 23 - 452601 A7 經滴部中央標隼局負工消費合作社印^ B7五、發明説明（21 ) 粒子之離子化比率··然後，由於使用該輔肋電極6 «來同 時兼作為該磁場設定用手段7之一部份|因此*即使就成 本方面來看的話|也是非常有利的。 雖然，該輔助電極6之一部份，係為磁性體，但是*毫 無疑問的，該輔肋電極6，也可以全部皆為磁性體。g卩使 是一開始，該磁性體就可Μ發生有磁化作用，也就是說， 該磁性體當然可Μ為磁鐵。 接著，就該對應於本發明之申請專利範圍第5項之濺鍍 裝置之發明的第4實施肜態，來作說明。圖6係為顯示出本 發明之第4實施形態中之濺鍍裝置之構成的俯視概略圖。 在該莨施形態之裝置中，係使用該輔助電極6*而來形 成整個之磁場設定用手段7。在該實施形態中之輔助電極6 ，係為沿著該濺鍍室1之高度方向而成為長條之角棒狀之 構件。就正如圖6所顯示的》在圓周上，隔著相同之間隔 ，而設置有許多個之輔肋電極6。各個之輔肋電極6·係由 已經磁化過之磁性體、也就是磁鐵所形成的。 各個之輔肋電極6之内側之表面，都是成為相同之磁極（ 例如S極），而各個之輔肋電極6之外側之表面*都是成為 另一個之相同之磁極（例如Ν極）。在各個之輔助電極6之内 側·係形成有該圼周圍狀之像圖5所示之尖點磁場。在該 尖點磁場中*由於電漿Ρ’並不容易沿著橫切之方向而擴散 通過該磁力線76*因此*在在各個之輔助電極6之内側， 會捕捉到電漿Ρ 结果，可以形成高密度之電漿Ρ '。 藉由該尖點磁場，則能夠非常有效率地進行該濺鍍粒子 本紙張尺度適用+國國家標準（CNS ) Α4規格（210Χ 297公釐） _ _ {請先閲讀背面之注意事項再填寫本頁) 5 2 6 0 1 A7 B7 經滴部中央標準局員工消費合作社印製 五、發明説明 22 ) i | 之 離 子 化 作 業 由 於 可 以防 止 該 電 漿P ' 朝 向 著各 個 之輔 助 1 ! ! 電 極 S而進行擴散 |因此也能夠抑制注該由於各個之輔助 ». 1 | 電 極 6之電漿Ρ ’所進行之濺鍍作業和所造成之損傷 、Μ及 請 先 閱 1 I 該 由 於 電 子 撞 擊 所 造 成 之加 埶 現 象 〇 讀 背 1 1 面 I 就 正 如 圖 β所顯示的 係針對該2 個之 輔 肋 電極 2 ，而設 1 I I 置 有 1個之輔肋用高頻電源62 並且*使用該二分割器 事 項 1 1 再 1 使 得 該 簿 送 線 呈 分 歧 狀 ，而 供 nfff 懕 高 頻電 力 至 各個 之 輔助 電 填 —j 本 極 2中· 、可Μ在各個之輔助電極6 設置 有 專 用之 輔 肋用 高 頁 1 I 頻 電 源 62 也 可 Μ 由 1個之輔肋用高頻電源62，呈分歧狀 1 1 \ 地 供 fftp 應 高 頻 電 力 至 各 個 之輔 助 電 極 6中 、當調整各個之輔 ] I 助 電 極 6之配置間隔 而使得該在相鄰接之輔助電極6間 之 1 訂 高 頻 結 合 再 一 起 之 時 ，則 僅 需 要 1個之電力供應場所 1 I 就 可 滿 足 需 要 而 不 必再 進 行 分 歧0 在 這 種狀 態 下， 於 1 I 各 個 之 輔 肋 電 極 6之間 則最好使得該高頻 >發生有共振 I ! I 現 象 那 就 會 更 加 適 當 C I 本 發 明 之 離 子 化 濺 鍍 装置 除 了 可以 被 使 用在 各 種之 半 1 1 導 體 元 件 製 造 上 之 外 ，也 能 夠 使 用在 液 晶 顯示 器 和其 他 1 I 之 各 種 之 電 子 製 品 製 造上 1 I (發明之效果） 1 1 I 就 正 如 以 上 之 說 明 所 敘述 的 若 藉由 本 發 明之 甲 請専 利 1 1 範 圍 第 1項所記載之發明的話 由於在該形成於輔肋電極 1 1 内 側 之 電 漿 中 該 濺 鍍粒 子 會 發 生離 子 ib 作用 因此 可 1 t Μ 對 於 該 具 有 相 當 高 之 縱横 比 之 孔 洞， 圼 非 常高 之 底面 有 1 I 效 覆 蓋 範 圍 率 地 進 行 該 成膜 作 業 〇 此時 由 於係 使 用一 部 1 1 本紙張尺度適用中國國家標隼（CNS ) A4規格（2丨0X297公嫠） 25 - 15 260 1 A7 B7 五、發明説明（23 ) 經"部中央標準局員工消費合作社印製 分之該投 再另外設 當低廉。 若藉由 ，因為係 合之輔肋 粒子對於 若藉由 ，除了前 出該離子 地垂直入 有效率地 縱横比之 地進行該 若藉由 ，因為可 之内側之 更進一步 若藉由 •除了前 該磁場設 造：所Μ 若藉由 ，除了前 人至標靶中之電力*來形成電漿，所Κ並不需要 置另一個電源，因此該裝置成本，也可Κ變得相 本發明之 由輔助用 電極中* 該底面有 本發明之 述之效果 化濺鍍粒 射至基板 到達至孔 孔洞，更 成膜作業 本發明之 Μ藉由該 電漿，所 地提高該 本發明之 逑之效果 定用手段 ，即使就 本發明之 述之效果 申請專利範圍第2項所記載之發明的話 高頻電源，施加高頻至該進行電容性結 所Μ能夠更進一步地提高該離子化濺鍍 效覆蓋範圍率所達成之效果。 申請專利範圍第3項所記載之發明的話 之外，更因為藉由該引出用電場而吸引 子，而使得離子化濺鍍粒子，非常容易 中*所Μ該離子化濺鍍粒子，遨能夠更 洞之底面。因此|對於該具有相當高之 加能夠圼非常高之底面有效覆蓋範圍率 Ο 申請專利範圍第4項所記載之發明的話 磁場設定用手段*來捕捉住該輔肋電極 Μ電漿密度會變得比較高。因此，能夠 濺鍍粒子之離子化比率。 申請專利範圍第5項所記載之發明的話 之外，更因為係藉由輔助電極，而構成 之一部份或者全部，因此*可以簡化構 成本之方面來看的話，也是非常有利的 申請專利範圍第6項所記載之發明的話 之外，更因為係藉由對於該輔助電極* (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) Α4規格（2]Ox 297公釐） 26 ^5260 11 at B7五、發明説明（24 ) 經"部中央標隼局負工消費合作社印製 項 基7r 該第 止圍 防範 夠利 能專 也請 JW申 所之 ’ 明 理發 處本 鍍由 濺藉 行若 隹 生 產 題 問 之 損 污 板 話 的 明 發 之 載 記 所 防 可 更 外 之 果 效 ο 之 I 生 項 6 發 第之 圍題 範問 利等 專傷 請損 之 之 槿 述電 前 肋 了輔 除該 止 的件 明條 發之 之當 載適 記 最 所在 項為 9成 或 8 » 第件 圍條 範 之 利力 專壓 請膜 申成 之該 明得 發使 本以 由可 藉則 若 ’ 話 圍 範 蓋 覆 效 有 面 底 高 提 該 到 得 地 分 充 當 相 夠 **月 * 〇 此果 因效 , 之 下率 之 項" 1 圖 第 略 圍概 範視 利前 專的 請成 申構 之 之 明置 發裝 本鍍 於濺 應 之 對中 > 該 態 明出形 說示施 箪顯簧 簡為η 之係m 式1 2 園明 _ ϊ Φ ( 發 明 說 Μ 用 而 圖 路 概 面 r^y 诤 之 膜 薄 之 積 堆 行 進 1 為 餘 (請先閱讀背面之注意事項再填寫本頁 用 作 之 子 粒 鍍 濺 之 化 子 £t 親 圈呈 0 圖 在 該 更 變 該 出 示 顯 為 係 手 定 設 埸 磁 之 中 置 裝 之 。 ί画 略 概 視 前 的 例 化 變 之 成 構 團之 段 4 之 圖明 發 為 第 係 5 之 項S 2 第略 園 概 範視 利 刖 專的 請成 申 構 之 之 明置 發裝 本鍍 於濺 應之 對中 該態 出形 示施 顯實 2 圖 略 既 視 W月 圖的 成 構 之 置 裝 鍍 濺 之 中 態 肜 施 實 3 第 之 明 發 本 出 示 顯 為 構 之 置 裝 鍍 濺 之 中 態 形 施 實 4 第 之 明 發 本 出 示 顯 為 係 6 圖 圖 略 概 視 俯 的 成The chamber is sputtered from the ο section to the stop. To use the body right to the left, the left guide uses the ΓΓ system to the system 9 this, the movement etc. 10 start Γ) to the right (A after the ο 5) the board should be placed on In the splash of the person leading the gas 0 image M in the fixed chamber pressure plating, the surrounding range 3 makes it the source M right electricity, the left device ΓΓ plating To sputtering adjustment 〇 > The degree qis quick start gas ΓΓ, exhaust To under nu of 1 ο force? Who is the pressure? 0 ^ a The official system can be controlled.-] 内 内 1 force and 砠 ¾ a ^ 0 high frequency CO discharge source plated piezoelectric sputtering Tube plated control base sputtering magnetism should be based on the production start, middle 2 target to the high-frequency piezoelectric current spot electroplating sputtering control magnetism should be assisted by the image electrode and the capacitor. The electric auxiliary line 0 to P feeds the slurry and transmits electricity. There will be a large amount of electricity, and the electric capacity in the space will pass through the Mϋ Tm (the target IE1BS passes slji_, and the target should be driven by the target). The paper size of the paper is applicable to the Chinese National Standard (CNS) A4 (2 丨 OX 297 mm) 15 452601 A7 Economy Printed by B7 Employee Consumer Cooperative of the Central Standards Bureau. V. Invention Description (13) As a result, a plasma P 'is formed inside the auxiliary rib electrode 6. The substrate is biased with a high-frequency power supply 81, and this is applied. The substrate bias voltage reaches the substrate 50. As a result, the extraction electric field is set between the plasma P 'and the substrate 50. The sputtering particles emitted by the target 2 reach the substrate 50. On the substrate 50, a thin film consisting of the material of the target 2 is deposited. When the thin film reaches the required thickness, the sputtering power source 3 and the substrate bias high-frequency power source are stopped separately. 31. Operation of M and gas introduction means (gas introduction system) 4. Then > After exhausting the inside of the sputtering chamber 1 again, * from the sputtering chamber 1, take out the substrate 50 In the state of manufacturing the barrier film, a target 2 made of titanium was used. Initially, argon (Ar) * was introduced as a process gas, and K was formed to be too thin. Then, nitrogen ( Ν2), as a process gas, so that titanium and nitrogen react. Then, the barrier film on which the titanium nitride film is laminated on the titanium film can be obtained. Many of the sputtered particles emitted by the target 2 * will pass through the plasma P_, and ion will occur. Ionization * and become ionized sputtered particles. The ionized sputtered particles can be very efficiently attracted from the electric field by the extraction electric field, and the ions can be made extremely efficiently. The sputtered particles are incident on the substrate 50. The ionized sputtering particles can reach the inside of the hole formed on the surface of the substrate 50 very efficiently. Therefore, it is very ribbed. The film formation operation can be performed with a good coverage of the bottom surface in the hole. Regarding this point, in the description under K, I will make more detailed information. 16 A paper size quick use China National Standards (CNS) Λ4 specifications (210X297 mm) (诮 Please read the notes and notes on the back before filling in this Page) Member X of the Central Standards Bureau of the Ministry of Economic Affairs, printed by Consumer Cooperatives 5 260 1 A7 B7 V. Description of invention description (u). Fig. 2 is a schematic cross-sectional view of a deposited thin film, and the effect of the plutonium ionized sputtered particles is described by K. Figs. As shown in FIG. 2 (a), when the thin film 5 1 0 is deposited in the fine holes 5 0 0 formed on the surface of the substrate 50, the thin film 5 1 0 is very vigorously deposited on The tendency of the part 5 0 3 of the opening 5 0 of the hole to produce "the film 510 * which is very vigorously protruding part is called" overhang ". When an overhang is formed, the opening of the hole 500 will become smaller, so • the aspect ratio will become higher when viewed from the outside. Therefore, the number of the sputtered atoms that can reach into the hole 500 will be relatively small, and as a result, the effective coverage rate of the bottom surface will be reduced. Here • As shown in Figure 2 (b), when the ionized sputtered particles 20 reach the substrate 50, the ionized sputtered particles 20 * will once again be applied to the overhanging body. Part of the film 5 1 0, the splattering process, so that (please read the precautions on the back, then fill in the tips to buy) * 1T thin film δ body hanging 'the ο get 5 make the film * thin use The contribution of the work is ρ ο tone 2 body particles are suspended and plated, the splashed chemical phenomenon is now collapsed, and the hair growth will be aft 0 the 10 is mixed with the cause by the degree of splashing, ο 5 is the same as the falling Small change □ Open ο ο 5 The hole with the same hole in the 4tc stack film should be promoted to prevent the M can be used, with ο 2 sub-stack deposition coating film thinned off the surface of the bottom particles The surface of the sputter plate is 3c like 翮 ο The rate is covered by the range M cover can only cover the surface without removing the bottom. In the image, the electroplating sputter and then the plating sputtered into the body should be suspended, and the production should be borrowed. Can, select children, use the process of M for the outside body o UV 2 The paper size of the elephant is applicable to the Chinese National Standard (CNS) A4 specification (210 × 297 mm) 17 45 260 1 A7 B7 Central Bureau of Standards, Ministry of Economic Affairs Employee Consumer Cooperative Co., Ltd. Yin Fan 5. Description of the Invention (15) In the actual pickled device *, the electric field setting means 8 is used to set the application direction M toward the substrate 50 and perpendicular to the substrate 50. The electric field is used to reduce the potential. The ionized sputtered particles 20 are guided by the lead-out electric field and are relatively easily projected vertically into the substrate 50 by a person. The ionized sputtering particles 20 * can easily reach the bottom surface of the relatively deep hole 500. As for this point, it can also be very helpful to increase the effective coverage rate of the base. When the high-frequency power supplied to the target 2 is 13.56 MHz and 6 kW, and the high-frequency power applied to the target by the substrate bias high-frequency power supply 81 is 13.56 MHz and 200 W, and the When the pressure is 30 in Torr, the film formation operation can be performed on the hole with an aspect ratio of 4 at a bottom surface effective coverage rate of about 50% *. The conditions of the aforementioned film formation pressure are important in order to obtain the effect of appropriate ionized sputtering particles. When the film forming pressure exceeds 10 niTorr, the ionization of the sputtered particles can be sufficiently performed. But • Because there are many false gas molecules in the flight path of the sputtered particles, there will be scattered artifacts that will cause the ionized sputtered particles to reach the substrate 5 0 So far problems arise. Therefore * In general, it is best to set the film formation pressure in the range of IOibToΓΓ to 100μβΤογγ. It is also necessary to make the relationship between the conditions of the aforementioned film formation pressure and the average free stroke of the ion-sputtered particles in the most appropriate state. In order to obtain the proper effect of the ionized sputtering particles, when the sputtering particles are emitted from the target 2 so that the sputtering particles reach the substrate 50, {Please read the precautions on the back before filling in this Page) This paper size applies to Chinese National Standard (CNS) A4 specification (2 丨 0X297 mm) 18 — 2 60 1 A7 B7 Printed by the Consumers' Cooperatives of the Central Standards Bureau of the People's Republic of China 5. Inventive Notes (16) 1 1 | Required Quite a high probability that the sputtered particles can collide with electrons and 1 1 t ions. Compared with the distance between the target 2 and the substrate 50 I | from the target can be sufficiently m shorter than the average of the m plated particles It is very important to read the action of the stroke in advance. The t 1 t pseudo is very important. Back 1 1 I If the average free stroke at this time is more correctly stated, it is the note 1 of the sputtering. The average white time of the ions in the slurry is determined by the stroke but the Item 1 I then 1 1 The average travel distance can also be roughly close to the process group. The average free travel distance between the clothes is 0. This reason is because the process uses the page 1 1 air not wax group. When there are frequent and frequent collisions, the sputtered particles will also frequently collide with the process gas. I \ 1 When the above example of spring application is used as an example to explain If the distance between target 1 and target 50 and substrate 50 is about 120 pulling and twisting, and the film forming pressure is 30 m 1 1 To Γ Γ, the average travel distance of i will be under 5 ΙΗ in Μ, so i [, compare From the distance between the target 2 and the substrate 50, the average free path [1 I has been sufficiently short m, so the sputtered particles will also frequently 1 and ions have jse,-collision phenomenon can promote The ionization effect is as described above. The device of this embodiment can very effectively make the sputtering particles ionize and make the sputtering! 1 particles are shot into the substrate 50 vertically. The device in the actual form can be 1 1 I > λ igj. For the hole with a relatively high aspect ratio, the very high bottom surface has a 1 1 effective coverage ratio to perform the film forming operation. 0 The device in the actual form f 1 1 The--part of the electric power input into the target 2 is used to form the plasma P 'for 1 i ionization. Therefore, the device of this embodiment does not require i I and requires another power source. It is very advantageous in terms of cost. 1 This paper size is applicable to the Chinese National Standard (CNS) Λ4 specification (210X 297 mm) 19 45 260 t A7. The Consumers' Cooperative of the Central Standards Bureau of the Ministry of Consumer Affairs printed and printed B7. 5. Description of the invention (17). In the foregoing conditions, it is presumed that approximately 30¾ of the high-frequency power applied to the target 2 will be transmitted to the auxiliary electrode 6. In the above-mentioned implementation device *, since the auxiliary electrode 6 is exposed to the plasma P ′, it is very likely that the auxiliary electrode 6 itself * will also be subjected to a sputtering process. Therefore, when the auxiliary electrode 6 is subjected to a sputtering process, there is a problem that the auxiliary electrode 6 that has been subjected to the sputtering process reaches the substrate 50 and the substrate 50 is stained. In order to solve this problem, the auxiliary rib electrode 6 can be formed by using the same material as the target 2 or a material similar to the target 2 *. In a state where the target 2 is made of titanium gold, the auxiliary electrode 6 may be formed using titanium or a titanium alloy. Here, the so-called "material similar to the target material" means that the "material that does not stain the substrate" can cover the auxiliary electrode 6 with the same material as the target 2. The surface. When the target 2 is made of titanium metal, a titanium metal film having a thickness of about 100 W is formed on the surface of the auxiliary rib electrode 6. The aforementioned coating operation can be performed by electrolytic plating or sputtering. If the material of the substrate may be exposed as the number of operations of the film forming process increases, a new auxiliary electrode 6 can be exchanged. By applying M to the surface * of the auxiliary electrode 6 such as an aluminum anode-treated surface treatment resistant to plasma, it is possible that K is not sputtered due to the action of the plasma P ′. In the magnetic field setting means 7 described above, the magnetic field lines * which are set to connect the first magnet 71 and the second magnet 72 will start from the plasma P 'and reach the substrate 50. The magnetic field setting method 7 is suitable for being used (read the precautions on the back of the first cabinet, and then fill out this page) This paper size applies the Chinese National Standard (CNS) Α4 specification (210X 297 mm) -20-45 260 1 A7 B7 Printed by the Consumer Electronics Cooperative of the Central Bureau of the Ministry of Consumer Affairs. V. Invention Description (18) 1 The electrons and ions are attracted from the plasma P, 0 In addition, when the electrons are related to the electrons of the base 1 1 I plate 50 When there is a problem with the impact, just like 1 1 J described below, you can change the magnetic field setting method. 7 Please first 1 1 Figure 3 shows the change of the magnetic field setting in the device of Figure 1. Hand M reads the circle of the front view of the modification example of the constitution of 1! 1 j. In the example of Ifij 3, the inner surface of the first magnet 71 and the upper surface of the second magnet 72 are the same. The term 1 I is, for example, the S pole, and the outer surface of the first magnet 71 and the lower end surface of the second magnet 72 are the same, and become the pole t 1 In the sputtering chamber 1-Figure 3 is set to write this page. The magnetic field lines 74 shown in Figure 1 «In the magnetic field shape shown in Figure 3, because it starts from 1 1 plasma P ', it directly reaches the substrate 50. The magnetic field lines are relatively small, so the effect of attracting electrons and ions from the plasma * will be less than the state shown in Figure 1 0. However, at this time, for example, the electron 1 I Damage to the substrate 50 caused by the impact will be relatively small. 1 1 Next, a description will be given of the sputtering applied to item 2 of the scope of patent application of the present invention! Ί The second embodiment of the invention of the device will be described > Draw 4 series, in order to show that 1 corresponds to the application of the present invention Patent specification r = ta The second embodiment 1 of the second invention 1 is a schematic front view of the structure of the sputtering device 1 I 1 The device of the second embodiment is different from the device of the first embodiment 1 The position i is the method of applying barrel frequency power to the auxiliary electrode 6 > The 1 1 auxiliary lightning pole 6 is connected with an auxiliary high-frequency power source 6 2, and the auxiliary rib high-frequency 1 1 power source 62 is The frequency is 400kHz and the output power is about 500W. Ι The auxiliary high-frequency power source 62 > is connected to the auxiliary rib electrode 6 and the concentric shaft cable by a transmission line 1 1 I 63 of the concentric shaft cable or the like. ί I transmission line 63 passes through an insulating material not shown in the drawing and 1 1 paper National Standard (CNS) A4 specification (210X297 mm) -2 1-4 5 2 6 〇ta? B7 V. Description of the invention (19 Pass through the sputtering chamber 1 tightly, although in this embodiment * is in The upper end surface of the auxiliary rib electrode 6 is connected to the transmission line 63, but the transmission line 63 may be connected to the outer side of the auxiliary electrode 6 or the like. The structure described below may also be adopted: The structure is such that the insulator 61 for holding and fixing the auxiliary electrode 6 has a tubular shape, and a concentric shaft cable is provided in the inside, and the structure connected to the auxiliary electrode 6 is provided. Frequency concentric shaft tube, etc., to maintain the structure of the auxiliary rib electrode 6. In the state where the concentric shaft tube is fixed in the sputtering chamber 1, the concentric shaft tube and the sputtering chamber 1 will become Insulation state. In this second application mode, high-frequency voltage and negative DC voltage can be freely switched and applied to the target 2. The target 2 is connected with the MV and high-frequency power. The first sputtering power source 34 and the second sputtering power source applying a negative DC voltage. 35. With this switch 36, you can freely choose the power supply for sputtering on either side. Printed by the Consumers Cooperative of the Central Bureau of Standards and Technology (please read the note ^^ on the back before filling this page) ) The first sputtering power source 34 to which high-frequency power is applied by M, can be used as the same plating power source 3 as the sputtering power source 3 in the aforementioned first embodiment. The first sputtering power source 34 and the auxiliary high-frequency power source 62 must be capable of applying (outputting) high frequencies of the same frequency. In addition, as the second sputtering power source 35, it is necessary to use a sputtering power source capable of applying (outputting) a voltage of about 60 volts. 'In the second solid pickled form * when a high-frequency voltage is applied to the target 2 using the first sputtering power source 34 * the target 2 and the auxiliary rib electrode 6 will pass through the discharge space The capacitance is capacitively combined. Therefore, a plasma P% can be formed inside the auxiliary electrode 6 very efficiently. In this paper, the Chinese National Standard (CNS) Λ4 specification (210X297 mm) is applied. 22 452601 A7 B7 V. Description of the invention (20) Printed by the Ministry of Economic Affairs of the Central Bureau of Standards and Labor and Cooperatives of the Ministry of Economic Affairs. In the implementation of this state, the high-frequency power supply 62 for the auxiliary ribs must be used, so there is a disadvantage of relatively high cost. However, a higher density plasma P ′ can be formed as a result. As a result, the ionization efficiency of the sputtered particles can be improved. Under the same pressure conditions as in the first embodiment, for the hole with the aspect ratio of 4, By performing the sputtering process, the effective coverage rate of the bottom surface of about 60% can be obtained by K. Next, the third embodiment of the invention of the sputtering apparatus corresponding to item 5 of the scope of patent application of the present invention is made. Explanation. Figure 5 shows the display A schematic front view of the structure of the sputtering device in the third embodiment of the invention. The difference between the device in the cellar form and the device in each of the previous cell forms, that is, the auxiliary rib electrode 6 is configured as The magnetic field setting method is a part of the method 7. The part 6 0 of the auxiliary rib electrode 6 which is close to about half of the part of the substrate holder 5] is made of a magnetic material (hereinafter, referred to as magnetic The body part.). The magnetic body part 601 is formed of magnetic stainless steel or an iron material which is provided with an anti-corrosion treatment of nickel plating on the surface. The substrate holder 5 is provided below the substrate holder 5. It is the same auxiliary magnet 75 as the second magnet 72 in the first embodiment. The magnetic body portion 601 of the auxiliary electrode 6 is formed with a magnetic circuit of a magnetic field caused by the auxiliary magnet > The magnetic body portion 601 of the auxiliary rib electrode 6 also undergoes magnetization with the increase of time. Therefore, the magnetic body portion 601 of the auxiliary electrode 6 and the second magnet 75 constitute the magnetic field setting means 7 together. Even in this third embodiment, since As in the state shown in 圔 1, the plasma P ′ can be captured inside the auxiliary rib electrode 6 to obtain a plasma with a relatively high density ?, and the sputtering can be further improved. Mining (Please read the notes on the back before filling this page} -5 This paper size is applicable to China National Standard (CNS) A4 size (2Ι0 × 29 ·; mm) 23-452601 A7 Cooperative seal ^ B7 V. Description of the invention (21) Ionization ratio of particles ... Then, since the auxiliary rib electrode 6 «is also used as part of the magnetic field setting means 7 | therefore * even in terms of cost If you look at it, it is also very beneficial. Although a part of the auxiliary electrode 6 is a magnetic body, there is no doubt that the auxiliary rib electrode 6 may be all a magnetic body. g is that at the beginning, the magnetic body can be magnetized, that is, the magnetic body can of course be a magnet. Next, a description will be given of a fourth embodiment of the invention of the sputtering apparatus corresponding to item 5 of the scope of patent application of the present invention. Fig. 6 is a schematic plan view showing the structure of a sputtering apparatus according to a fourth embodiment of the present invention. In the device of this application form, the auxiliary electrode 6 * is used to form the entire magnetic field setting means 7. The auxiliary electrode 6 in this embodiment is a long angular rod-shaped member formed along the height direction of the sputtering chamber 1. As shown in FIG. 6, a plurality of auxiliary rib electrodes 6 are provided on the circumference at the same interval. Each of the auxiliary rib electrodes 6 is formed of a magnetized magnet, that is, a magnet. The inner surface of each auxiliary rib electrode 6 becomes the same magnetic pole (for example, S pole), and the outer surface * of each auxiliary rib electrode 6 becomes the same magnetic pole (for example, N pole) of another. Inside each of the auxiliary electrodes 6, a sharp-point magnetic field like that shown in Fig. 5 is formed around the ridge. In this sharp point magnetic field * because the plasma P 'is not easy to diffuse through the magnetic field lines 76 in the transverse direction * so * the plasma P will be captured inside the auxiliary electrodes 6 as a result, it can be formed High density plasma P '. With the sharp point magnetic field, the sputtered particles can be carried out very efficiently. The paper size is applicable + National Standard (CNS) A4 specification (210 × 297 mm) _ _ {Please read the precautions on the back before filling in this Page) 5 2 6 0 1 A7 B7 Printed by the Consumer Standards Cooperative of the Central Standards Bureau of Didi Ministry. 5. Description of invention 22) The ionization operation of i | can prevent the plasma P 'from facing the auxiliary 1!! Electrode S Diffusion | Therefore, it is also possible to suppress the injection due to the various auxiliary ». 1 | Sputtering and damage caused by the plasma P 'of electrode 6 and M, please read 1 I This should be caused by electron impact Adding the phenomenon of reading the back 1 1 surface I is as shown in Figure β for the two auxiliary rib electrodes 2, and set 1 II with 1 auxiliary rib with a high-frequency power source 62 and * use the two Divider matters 1 1 and 1 make the book feed line divergent, and provide nfff 懕 high frequency power Force to each auxiliary electric filling —j this pole 2 ·, each auxiliary electrode 6 can be provided with a special auxiliary rib for high page 1 I frequency power supply 62 can also be used 1 auxiliary rib for high frequency power supply 62, it is divided into 1 1 \ ground for fftp should be high-frequency power to each auxiliary electrode 6, when adjusting each auxiliary] I configuration interval of the auxiliary electrode 6 so that the 1 between adjacent auxiliary electrodes 6 When the high-frequency combination is ordered together, only one power supply site 1 I is needed to meet the needs without having to diverge. In this state, it is best to be between the auxiliary rib electrodes 6 of each I. If the resonance I! I phenomenon occurs, it will be more appropriate CI. The ion sputtering device of the present invention can be used not only in the manufacture of various half 1 1 conductor elements, but also in liquid crystal displays. And other 1 I electronic products 1 I (Effect of the invention) 1 1 I As described in the above description, if the invention described in the item 1 of the 1 1 range of the present invention is used, the electricity formed on the inner side of the auxiliary rib electrode 1 1 The sputtered particles in the slurry will undergo the ion ib action, so 1 t Μ can be used to form the film with a very high aspect ratio of the hole, and the very high bottom surface has 1 I effective coverage. Use 1 1 This paper size is applicable to China National Standards (CNS) A4 specifications (2 丨 0X297) 嫠 25-15 260 1 A7 B7 V. Description of the invention (23) Printed by " Ministry Central Standards Bureau Staff Consumer Cooperatives The system should be set as a low price. If you use, because the bound auxiliary rib particles, if you use, except the front, the ions are perpendicularly moved into the efficient aspect ratio, and the inside is possible, because the inner side of the can is further, if, except by the magnetic field before Design: If the plasma is formed by the electric power * from the previous person to the target, the K does not need to install another power source, so the cost of the device can also be used as an auxiliary for the invention. In the electrode * The bottom surface has the effect of the present invention. The sputtered particles are shot to the substrate to reach the holes, and the film is formed. The M of the present invention is used to increase the effect of the present invention. Means, even if the invention described in the patent scope item 2 is applied for the effect of the present invention, applying a high frequency to the capacitive junction can further improve the coverage of the ionization sputtering effect The effect achieved. In addition to the invention described in item 3 of the scope of patent application, because the attractor is attracted by the extraction electric field, the ionized sputtered particles are very easy to be neutralized. Underside of the hole. Therefore, for this, the effective coverage rate can be very high, and the effective coverage rate is very high. If the invention described in the fourth item of the patent application is applied, the magnetic field setting means * will capture the plasma density of the auxiliary rib electrode. Relatively high. Therefore, the ionization ratio of the sputtered particles can be achieved. In addition to the invention described in item 5 of the scope of patent application, because part or all of it is formed by the auxiliary electrode, it is also very advantageous for the scope of patent application if it can simplify the constitution. In addition to the invention described in item 6, it is because the auxiliary electrode * (please read the precautions on the back before filling this page) This paper size applies the Chinese National Standard (CNS) Α4 specification (2) Ox 297 mm) 26 ^ 5260 11 at B7 V. Description of the invention (24) The Ministry of Standards and Technology Bureau of the Central Bureau of Work and Consumer Cooperatives printed the project base 7r. The cut of the haircut is protected by the instructions of Mingfa issued by the splash-borrowed Rugao production question, which can damage the stained board. The I item is 6th issue, the question is Fan Wenli and other special injuries. Please report the loss of electricity before the supplementary statement. If the relevant item is issued, the appropriate item is 90% or 8%. »The benefit of the first paragraph of the article is specifically for the application. Have a reason By the way, if the words are covered, the coverage will be effective, and the deserved points will be sufficient to achieve the necessary ** month * 〇 This effect is caused by the effect of the lower rate " 1 A special request to apply the structure of the bright hair set plated to the center of the splash> The state of the shape shows that the system of Shi Xing's obvious spring is simply η m Formula 1 2 Yuan Ming _ ϊ Φ (Invention said The map of the road outline r ^ y 诤 the thin film of the stack is more than 1 (please read the precautions on the back before filling in this page to use the seeds of the plated splashing £ tt circle circle 0 picture in this more The presentation should be changed to be installed in the magnetic field by hand. The outline of the previous picture is changed into a group of paragraph 4 and the picture is issued as item 5 of the system S 2 Fan Shili's special request to apply the structure of the installation of the hair is plated in the pair of splashes. This form shows the manifestation of the reality. 2 The figure shows the structure of the installation and the splash of the month. Practice 3 No. 2 Mingfa presents the structured display The implementation of the middle form of the 4th display of the Mingfa is clearly shown in the figure 6

明 說 統 之 室 系 號鍍氣 編灑排 ..l.f ·. *· 元 lH 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X297公釐） 27 4 5 2 6 0 1 A7B7五、發明説明（25) 2 :摞靶 3 :濺鍍用罨源 34 :第1濺鍍用霣源 35 :第2濺鍍用甯湄 36 :切換器 4 :氣踊導入用手段 5 :基板座架 50 :基板 6 :輔助電極 601 :磁性體部 62:輔肋用高頻霣源 71 :第1磁嫌 72 :第2磁雄 8 :霣場設定用手段 81:基板燔壓（bias)用高頻霣源 9:防吸附用屏W件 經濟部中央標準局負工消費合作社印掣 (請先閲讀背面之注袁事項再填寫本頁)It is said that the room number of the Tongzhi room is gas-plated .. lf ·. * · Yuan lH This paper size is applicable to the Chinese National Standard (CNS) Λ4 specification (210X297 mm) 27 4 5 2 6 0 1 A7B7 V. Description of the invention ( 25) 2: Radon target 3: Radon source for sputtering 34: Radon source for first sputtering 35: Ningmae for second sputtering 36: Switch 4: Means for introducing gas radon 5: Substrate holder 50: Substrate 6: Auxiliary electrode 601: Magnetic body part 62: High-frequency source for auxiliary ribs 71: First magnetic sensor 72: Second magnet 8: Field setting means 81: High-frequency source for substrate bias 9: Anti-adsorption screen W pieces Printed by the Central Standards Bureau of the Ministry of Economic Affairs and Consumer Cooperatives (please read the note on the back before completing this page)

本紙張尺度適用中國困家標车（CMS > A4规格（210X297公釐） 28This paper size applies to Chinese standard vehicles (CMS > A4 size (210X297 mm) 28

Claims (1)

^26^ 26 申請專利範圍Patent application scope 89. 7. 14 修正本 室濺 鍵行 濺進 之靶 統標 系 於 氣對 JA\ 3KW 有 用 具該 該和 有、 備靶 具標 為之 係内 ， 室 置鍍 装濺 鍍在 濺置 種設 一 該 1 和 之由 内 藉 室該 鍍在 濺定 至 固 入持 導保 體板 氣基 將得 Μ 使 用 Μ 該 用 和該 、 及 源 Μ 電 、 用段 鍍手 濺用 之入 理導 處體 鍍氣 置 位 之 Ϊ 射 入 ： 所為 之徵 子特 粒其 鍍， 濺置 之裝 出鍍 射源 發化 所子 G S 勸 標的 由架 而座 理板 處基 鑛之 濺上 之 逑 前 且 並 力 eJnl ο 頻靶 高 槱 有之 加逑 施前 ， 該 靶住 標圍 之包 逑 Μ 前 , 於極 對電 係助 ΕΒ , 輔 源有 電 置 用設 鍍還 濺 ， 極有 電加 肋施 輔被 該該 得和 使 * 遷 極 ’ 電 且肋 而輔 ; 該 徑得 路使 行 Κ 飛-之上 子位 粒電 鍍游 濺浮 之在 間持 板維 基 ’ 由内 藉 之 遷極 ’ 電 外助 另輔 , 該 合在 結而 性 ， 容力 申6gB w3 行頻 進高 ί 之 SS中 標靶 之 標 力之 雷述 頻前 高在 之加 述施 前該 室 鍍 濺 之 統 ¾ 氣 tl· 35¾ 。 有 置具 裝該 鍍有 濺備 該具 成為 構係 而 , ’ 置 漿裝 電鍍 有濺 >ύ SE 逋種 形一 ， 2 6 濺之 行 内 進室 靶鍍 標濺 於至 對入 以導 用體 該氣 和將 、Μ 靶用 標該 之和 內 ' 室源 鍍電 濺用 在鍍 置濺 設之 該理 和處 、 鍍 --------—教--- (請先閲讀背面之注意事項再填寫本頁) tT: -線- 經濟部智慧財產局員工消費合作社印製 由置 藉位 該 之 在到 定射 固入 持所 保之 板子 基粒 得鍍 使濺 Μ 之 用出 該射 及發 Μ 所 、 靶 段標 手由 用而 入理 導處 體鍍 氣濺 電 頻 高 有 加 · 施 為 ， 徵靶 特標 其之 * 述 置前 裝於 鍍對 濺係 化 ， 子源 離電 的用 架鍍 座濺 板之 基述 之前 上 和係 巴 I ， 標 極 之 電 述助 前輔 該該 住在 圍 ， 包且 Μ 而 極徑 電 路 助 行 輔飛 有 之 置子 設粒 還鍍 ’ 濺 且之 並間 ， 板 力基 源靶 電 標 用 之 鍍述 濺前 之和 述極 •1UgBf 工月 ΙΕ-8 與肋 該輔 有該 B ΰ , 施外 而此 源力 電電 頻頻 高高 用之 肋率 輔頻 有同 接相 連為 本紙張尺度適用中國國家標準（CNS)A4規格（210 Χ 297公釐） D8 經濟部智慧財產局員工消費合作社印*']衣 、申請專利範圍 ，進行電容性结合*而在該輔助電極之内側，形成有電漿 ，而構成該濺鍍裝置。 3. 如申請專利範圍第1或2項之漉鍍裝置，其中係設置有 電場設定用手段，用來設定該垂直於基板之電場，以便於 從該形成在前述之輔肋電極之内側中之電漿*吸引出離子 ，而且使得該雛子，入射至基板中。 4. 如申請專利範圍第1項之濺鍍裝置，其中係在前述之 輔助電極之内側，設置有磁場設定用手段，Μ設定該用於 捕捉住電漿之磁場。 5. 如申請專利範圍第4項之濺鍍裝置*其中前逑之輔助 雷極之一部份，係由磁性體或者磁鐵所形成的，而且，前 述之磁埸設定用手段之一部份*係由該輔助電極所構成的。 6. 如申請專利範圍第1項之濺鍍裝置，其中，係藉由和 標靶相同之材料或者接近標靶之材料，而被覆著前述之輔 助電極之表面 7. 如申譆專利範圍第1項之濺鍍裝置*其中係藉由和標 靶相同之材料或者接近標靶之材料，而形成前述之輔助電 極。 S.—種濺鏤方法，係為旛加有高頻電力至該設置在濺鍍 室内之標靶中，而對於該標靶*進行濺鍍處理，並且使得 由該標靶所發射出之濺鍍粒子，到達至基板，而在基板之 表面上，堆積出薄膜之濺鍍方法，其特徵為： 係使得該用Μ包圍庄標靶和基板間之濺鍍粒子之飛行路 徑而設置之輔助電極，圼電容性地結合有該施加至前述之 ----------------------訂·!------線 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 2 45 260 1 as DO C8 DS六、申請專利範圍 標靶中之高頻電力，同時，使得該濺鍍室内之壓力，維持 在iOmTorr〜100 niTorr之範圍之麗力下。 9. 一種濺鍍方法，係為施加有高頻電力至該設置在濺鍵 室内之標靶中，而對於該標靶*進行濺鍍處理，並且使得 由該標靶所發射出之濺鍍粒子，到達至基板，而在基板之 表面上*堆積出薄膜之濺鍍方法，其特徵為： 係使得該用Μ包圍住標靶和基板間之濺鍍粒子之飛行路 徑而設置之輔助電極，呈電容性地結合有該施加至前述之 標靶中之高頻電力，同時，使得該進行成膜作業中之濺鍍 室内之壓力，維持在該比較起該標靶和基板間之距離，而 可Μ使得濺鍍粒子之平均自由行程，能夠非常充分地進行 縮短之壓力下。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 ------l· I ^7*---------1. ----------------------- 本紙張尺度適用中國國家標準（CNS)A4規袼（210x 297公釐） 389. 7. 14 Corrected the target system of splashing in the splash key of this room is in the system of gas pair JA \ 3KW. There should be equipment, and the target equipment should be marked. Set up one and one from the internal borrowing room. The plating will be fixed to the gas guide base plate that will be fixed to the substrate. You will get Μ use 用 and 该, and source 电 electricity, use the section plating hand splashing guide. The body of the gas plating is placed in the injection: the characteristics of the characteristics of the plating, the splash of the installation of the plating source, the source of the chemical source GS recommended by the shelf and the base board at the base of the splash of the splatter In addition, the eJnl ο frequency target is applied before some high-frequency targets are applied. Before the target is enclosed, the target pair is assisted with EB, the auxiliary source is set with electroplating and splashing, and it is extremely charged. Rib Shi Fu was deserved and used to move the pole's electricity and ribs; the way was to make the line K Fei-the top sub-site plating electroplating and splashing floating in the intermediary board wiki 'borrowed from the inner pole 'Electricity is supplemented by electricity, and the unity is in harmony. Rong Lishen 6gB w3 Ray Biaoli target of the SS before said applying said high frequency before the addition of the splash of the plating chamber system ¾ gas tl · 35¾. There is a device to install the plated with a splash and the device to become a structure, and 'Paste installed with a plated and splashed> gt SE 逋 Shape one, 2 6 In the line of the sputtering target, the target plate is sputtered to the guide. The body and the gas, the M target with the target and the sum of the chamber source plating electrospray is used in the principle and place of the plating sputtering equipment, plating ---------- Teach --- (Please read first Note on the back, please fill out this page again) tT: -Line-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy The target of the target and the target section of the shooting and firing unit are used for the purpose of the guide. The body has a high frequency of electroplating and sputtering. The target is marked in the special standard. The source of the ion source is plated with the base plate and the splash plate is described above. It is used to support the front and back. I, the standard battery is used to help the front and the auxiliary should live in the surrounding area. Suppose the particles are also plated and sputtered, and the plate power base source target is used for electroplating. • 1UgBf month ⅠE-8 and rib should be supplemented by the B ΰ, and the high-frequency and high-efficiency rib-rate auxiliary frequency of the source should be connected to this paper standard. This paper applies the Chinese National Standard (CNS) A4 specification ( 210 X 297 mm) D8 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the scope of patent application, and capacitive coupling *, and a plasma is formed inside the auxiliary electrode to form the sputtering device. 3. For the electroplating device according to item 1 or 2 of the scope of patent application, an electric field setting means is provided for setting the electric field perpendicular to the substrate so as to facilitate the formation of the electric field from the inside of the auxiliary rib electrode. Plasma * attracts ions and causes the chicks to enter the substrate. 4. For example, the sputtering device of the scope of patent application No. 1 includes a magnetic field setting means inside the aforementioned auxiliary electrode, and M sets the magnetic field for capturing the plasma. 5. For example, the sputtering device in the scope of patent application No. 4 * The part of the auxiliary thunder pole of the front part is formed by a magnetic body or a magnet, and part of the means for setting the magnetic part mentioned above * It consists of this auxiliary electrode. 6. For example, the sputtering device of the scope of patent application, in which the surface of the aforementioned auxiliary electrode is covered with the same material as the target or a material close to the target. In the sputtering device of item *, the aforementioned auxiliary electrode is formed by using the same material as or close to the target. S.—A sputtering method is to add high-frequency power to the target set in the sputtering chamber, and perform sputtering treatment on the target *, and make the sputtering emitted by the target The sputtering method for plating particles to reach the substrate and depositing a thin film on the surface of the substrate is characterized by: an auxiliary electrode provided so that the flying path of the sputtering particles between the target and the substrate is surrounded by M , 圼 Capacitively combined with the above-mentioned ---------------------- ordering !! ------ (Please read the back Note: Please fill in this page again.) This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 2 45 260 1 as DO C8 DS. The pressure in the sputtering chamber is maintained at a level of force ranging from iOmTorr to 100 niTorr. 9. A sputtering method in which high-frequency power is applied to the target disposed in the sputtering key chamber, and the target * is subjected to a sputtering process, and the sputtering particles emitted by the target are sputtered. The sputtering method that reaches the substrate and deposits a thin film on the surface of the substrate is characterized in that: the auxiliary electrode provided so that the flying path of the sputtering particles between the target and the substrate is surrounded by M is Capacitively combines the high-frequency power applied to the aforementioned target, and at the same time, the pressure in the sputtering chamber during the film formation operation is maintained at the distance between the target and the substrate in comparison. Μ enables the average free stroke of the sputtered particles to be sufficiently reduced under a reduced pressure. (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -------- l ^ 7 * --------- 1. ---- ------------------- This paper size applies to China National Standard (CNS) A4 (210x 297 mm) 3
TW087100533A 1997-06-06 1998-01-16 Sputtering device and sputtering method TW452601B (en)

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