CN102199753A - Magnetron-enhanced aluminum ion vapor deposition process and apparatus - Google Patents
Magnetron-enhanced aluminum ion vapor deposition process and apparatus Download PDFInfo
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- CN102199753A CN102199753A CN 201010131250 CN201010131250A CN102199753A CN 102199753 A CN102199753 A CN 102199753A CN 201010131250 CN201010131250 CN 201010131250 CN 201010131250 A CN201010131250 A CN 201010131250A CN 102199753 A CN102199753 A CN 102199753A
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Abstract
The invention relates to the technical field of aluminum ion vapor deposition (IVD), discloses a magnetron-enhanced ion vapor deposition process and apparatus, and is used for solving the problems of low deposition rate, low coating efficiency, partial ionization of film material atoms or molecules and low ionization rate. The magnetron-enhanced ion vapor deposition process comprises the following specific schemes of: installing and fixing a substrate on the upper part in a vacuum chamber, installing and fixing an evaporation source below the substrate, earthing the vacuum chamber, connecting the substrate with a bias power supply, connecting the evaporation source with an evaporation power supply, introducing argon gas to the vacuum chamber, and setting a magnetic field B in the orthogonal direction of an electric field E generated between the substrate and evaporation source. The invention has the advantages of enhanced ionization effect, ionization of numerous atoms or molecules of the film material, large ion current, high deposition rate and high coating efficiency, and simultaneously the ionized film material atoms or molecules have strong diffraction property, and can be plated to manufacture substrates with complicated shapes.
Description
Technical field
The present invention relates to a kind of ion (IVD Ion Vapor Deposition Aluminum) technology of aluminizing, especially relate to by the magnetic control enhancement techniques and improve aluminize a kind of technology of (IVD Ion VaporDeposition Aluminum) of ion.
Background technology
D.M.Mattox had proposed vacuum ionic evaporation coating principle in 1963: in vacuum chamber, utilize electric field to make working gas discharge or be evaporated the material part ionization, at the working gas ion or when being evaporated substance ion bombardment effect, evaporant or its reactant be deposited on carry out plated film on the substrate surface.Ion plating organically combines gas glow discharge phenomenon, plasma technique and vacuum-evaporation three.
Ion aluminize (IVD Ion Vapor Deposition Aluminum) be meant by ion plating and obtain bonding force good homogeneous fine aluminium coating at matrix surface, early than studying successfully by McDonnell-Douglas Corporation the seventies in 20th century.The ion plating aluminum coating is a kind of supercoat that has a extensive future; be widely applied in the field of aerospace; be used to improve the galvanic corrosion consistency of titanium alloy fastener and fasten aluminium; in F-4, F-15, F-18 and B-767 aircraft structure, adopt; American army mark MIL-STD-1568A regulation, ion aluminize can be used as steel-iron components for cadmium technology.
Ion (the IVD Ion Vapor Deposition Aluminum) advantage of aluminizing is that film adhesion is strong, and diffraction is good, can be coated with the certain thickness aluminum coating of high purity to substrate.But having deficiency is film material atom or only part ionization of molecule, and ionization level is low, so sedimentation rate is little, plated film efficient is low, has influenced coating quality.
Summary of the invention
For solving the problems of the technologies described above, the purpose of this invention is to provide a kind of can improve film forming compactness, further strengthening membrane material and substrate surface bonding force, accelerate film forming sedimentation rate, efficient height, magnetic control with better film material diffraction strengthens aluminize (IVD) technology and realize a kind of device of this technology of ion.In addition, the present invention also may be used on being coated with other materials except that A1, in the ion plating as metals such as Ti, Fe, Co, Cr and alloy thereof; Simultaneously, very strong diffraction is arranged, can be coated with complex-shaped substrate by the film material atom of ionization or molecule.
Concrete technical scheme of the present invention is:
A kind of magnetic control strengthens the ion aluminum plating process, substrate 2 is fixed on top in the vacuum chamber 1, evaporation source 5 is fixed on substrate 2 over against the below, with vacuum chamber 1 ground connection, substrate 2 connects grid bias power supply 3, evaporation source 5 connects evaporation power supply 4, and vacuum chamber 1 fills the working gas argon gas, and the orthogonal directions of the electric field E that produces between substrate 2 is with evaporation source 5 is provided with magnetic field B.
The invention discloses a kind of device of realizing above-mentioned technology, this device is arranged in the vacuum chamber 1, is installed between substrate 2 and the evaporation source 5, is installed by left and right sides two portions symmetry and forms; Each part comprises positive plate 6, magnet 8 and pole shoe 9; Positive plate 6 covers the surface of magnet 8, is fixedly mounted on then on the pole shoe 9; Positive plate 6 is electrically connected vacuum chamber 1 ground connection with vacuum chamber 1; Described left and right sides two portions pole polarity is relative;
In addition, for solving the glow discharge that exists in the working process, evaporation source 5 heat radiations, heat is carried in the heating of film material, be evaporated the film material and carry heat, reach electronics and carry energy generation pyritous problem, magnet 8 both sides are provided with cooling-water duct 7 and damage to avoid magnet 8 demagnetizations or solenoid;
For obtaining better technique effect, two-part work angle of inclination, the described left and right sides can be regulated, and regulation range is 180 °～0 ° of 6 angle of two positive plates;
Described magnet 8 adopts permanent magnet;
For can accurately controlling magnetic flux, described magnet 8 adopts electromagnet;
The present invention not only can be used for working gas (Ar in the ion aluminum plating process
+) and the enhancing of film material atom or molecule ionization effect, can be widely applied in the ion film plating technology of multiple film material simultaneously, improve film-formation result.Ion film plating technology as Ti, Fe, Co, Cr metal etc. and alloy thereof.
Principle of the present invention is: in (IVD) technological process of aluminizing at ion, by increasing and the orthogonal magnetic field of electric field, strengthen the ionization effect of working gas and film material atom or molecule, thereby improve quality of forming film.
The Ar that ionization goes out
+Quickening to fly to negative electrode under electric field action is substrate 2, and 2 surface bombardments are cleaned to substrate.Positivity film material atom or molecule quicken to fly to substrate 2 surface depositions under electric field E effect, improve coating speed, form the film that compactness is good, bonding force is strong.
Ar
+ Bombard substrate 2 surfaces, can remove the oxide compound or the pollutent of substrate surface, be beneficial to substrate 2, improve film compactness with combination between film material atom or the molecule.Because argon gas ionization effect strengthens, so bombardment effect strengthens.Simultaneously, very strong diffraction is arranged, can be coated with complex-shaped substrate by the film material atom of ionization or molecule.
This ion (IVD) magnetic control of aluminizing strengthens supplementary unit and not only can be used for the ion working gas (Ar in (IVD) technology that aluminizes
+) and the enhancing of film material atom or molecule ionization effect, can be widely applied in the ion film plating technology of multiple film material simultaneously, improve film-formation result.Ion film plating technology as metals such as Ti, Fe, Co, Cr and alloy thereof.
Advantage of the present invention is: strengthened the ionization effect, the atom of film material or molecule can obtain very big ionic current in a large number by ionization, make sedimentation rate accelerate plated film efficient height.Simultaneously, very strong diffraction is arranged, can be coated with complex-shaped substrate by the film material atom of ionization or molecule.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is that the ion of prior art (IVD) structure of aluminizing is formed synoptic diagram;
Fig. 2 is apparatus structure of the present invention and scheme of installation;
1. vacuum chambers among the figure, 2. substrate, 3. grid bias power supply, 4. evaporation power supply, 5. evaporation source, 6. positive plate, 7. cooling-water duct, 8. magnet, 9. pole shoe.
Embodiment
Specify the present invention below in conjunction with accompanying drawing: device of the present invention is further improvement on the basis of existing technology, prior art is as shown in Figure 1: in the vacuum chamber 1, indoor top installs and fixes substrate 2, its below is over against evaporation source 5, vacuum chamber 1 ground connection, substrate 2 connects grid bias power supply 3, and evaporation source 5 connects evaporation power supply 4, vacuum chamber 1 applying argon gas.
Figure 2 shows that the structure and the scheme of installation of device of the present invention, described being arranged in the vacuum chamber 1 is installed between substrate 2 and the evaporation source 5, installed by left and right sides two portions symmetry and forms; Each part comprises positive plate 6, magnet 8 and pole shoe 9; Positive plate 6 covers the surface of magnet 8, is fixedly mounted on then on the pole shoe 9; Positive plate 6 is electrically connected with vacuum chamber 1 sidewall, vacuum chamber 1 ground connection; Described left and right sides two portions pole polarity is relative;
Owing to have glow discharge in the working process, evaporation source 5 heat radiations produce high temperature, and magnet 8 both sides are provided with cooling-water duct 7 and damage to avoid magnet 8 demagnetizations or solenoid;
For obtaining better technique effect, two-part work angle of inclination, the described left and right sides can be regulated, and regulation range is 180 °～0 ° of 6 angle of two positive plates;
Described magnet 8 adopts permanent magnet;
For can accurately controlling magnetic flux, described magnet 8 can also adopt electromagnet.
Claims (7)
1. a magnetic control strengthens the ion aluminum plating process, substrate (2) is fixed on the interior top of vacuum chamber (1), evaporation source (5) is fixed on substrate (2) over against the below, with vacuum chamber (1) ground connection, substrate (2) connects grid bias power supply (3), evaporation source (5) connects evaporation power supply (4), and vacuum chamber (1) applying argon gas is characterized in that: the orthogonal directions of the electric field E that produces between the same evaporation source of substrate (2) (5) is provided with magnetic field B.
2. device of realizing the described technology of claim 1, it is characterized in that: this device is arranged in the vacuum chamber (1), is installed between substrate (2) and the evaporation source (5), is installed by left and right sides two portions symmetry and forms; Each part comprises positive plate (6), magnet (8) and pole shoe (9); Positive plate (6) covers the surface of magnet (8), is fixedly mounted on then on the pole shoe (9); The same vacuum chamber of positive plate (6) (1) is electrically connected, vacuum chamber (1) ground connection; Described left and right sides two portions pole polarity is relative.
3. device according to claim 2 is characterized in that: magnet (8) both sides are provided with cooling-water duct (7).
4. device according to claim 3 is characterized in that: two-part work angle of inclination, the described left and right sides can be regulated, and regulation range is 180 °～0 ° of an angle between two positive plates (6).
5. device according to claim 3 is characterized in that: described magnet (8) adopts permanent magnet.
6. device according to claim 3 is characterized in that: described magnet (8) adopts electromagnet.
7. the application of the described technology of claim 1 is characterized in that: be applied to and be coated with in other ion platings as metals such as Ti, Fe, Co, Cr and alloy thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010131250 CN102199753A (en) | 2010-03-24 | 2010-03-24 | Magnetron-enhanced aluminum ion vapor deposition process and apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010131250 CN102199753A (en) | 2010-03-24 | 2010-03-24 | Magnetron-enhanced aluminum ion vapor deposition process and apparatus |
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| CN102199753A true CN102199753A (en) | 2011-09-28 |
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| CN 201010131250 Pending CN102199753A (en) | 2010-03-24 | 2010-03-24 | Magnetron-enhanced aluminum ion vapor deposition process and apparatus |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2256886Y (en) * | 1996-02-02 | 1997-06-25 | 吉林大学 | Magnetic controlled arc discharge ion-plating device |
| US6077403A (en) * | 1997-06-06 | 2000-06-20 | Anelva Corporation | Sputtering device and sputtering method |
| CN1281057A (en) * | 1999-10-11 | 2001-01-24 | 中国科学院力学研究所 | Equipment and process for preparing film by pulse aided filter and arc deposition |
| CN201665706U (en) * | 2010-03-24 | 2010-12-08 | 沈阳科友真空技术有限公司 | Magnetic control enhanced ion aluminum-plating device |
-
2010
- 2010-03-24 CN CN 201010131250 patent/CN102199753A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2256886Y (en) * | 1996-02-02 | 1997-06-25 | 吉林大学 | Magnetic controlled arc discharge ion-plating device |
| US6077403A (en) * | 1997-06-06 | 2000-06-20 | Anelva Corporation | Sputtering device and sputtering method |
| CN1281057A (en) * | 1999-10-11 | 2001-01-24 | 中国科学院力学研究所 | Equipment and process for preparing film by pulse aided filter and arc deposition |
| CN201665706U (en) * | 2010-03-24 | 2010-12-08 | 沈阳科友真空技术有限公司 | Magnetic control enhanced ion aluminum-plating device |
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Application publication date: 20110928 |