CN216891174U - Arc ion plating device and ta-C deposition coating device - Google Patents
Arc ion plating device and ta-C deposition coating device Download PDFInfo
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Abstract
The utility model belongs to the technical field of vacuum coating, and particularly relates to an arc ion plating device and a ta-C deposition coating device. The device comprises an ion plating shell with a straight cylindrical square cavity with one closed end and an open end, wherein two groups of cathode arc source components are fixed in the ion plating shell, the cathode arc source components are inclined at a certain angle or parallel to the central axis of the straight cylindrical square cavity, after the device works, positive ions and uncharged particles are generated on the surface of a cathode arc target material, when a plated workpiece is connected with a negative pole of a bias power supply, the positive ions move towards the direction of the plated workpiece under the electromagnetic driving action formed by a guide magnetic field and an auxiliary anode, and are deposited on the surface of the workpiece to form a coating film under the action of negative bias, and the uncharged particles move forwards along the speed direction of the uncharged particles and are deposited on the inner wall of another carbon target or the ion plating shell. The ion plating shell has large volume and short path, and is directly connected with the vacuum cavity, so that the deposition rate is greatly improved.
Description
Technical Field
The utility model belongs to the technical field of vacuum coating, and particularly relates to an arc ion plating device and a ta-C deposition coating device.
Background
Diamond-like Carbon (DLC) coatings are short for DLC coatings. Diamond-like carbon (DLC) films are a metastable type of film of amorphous carbon containing some amount of diamond bonds (sp2 and sp 3). The main component of the film is carbon, which can form different crystalline and disordered structures because it can exist in three different hybridization modes sp3, sp2 and sp l. This also complicates the study of carbon-based films. In the SP3 hybrid structure, the four valence electrons of one carbon atom are distributed into the oriented SP3 orbital with a tetrahedral structure, and the carbon atom forms strong, male bonds with neighboring atoms, a bonding mode which we also refer to as diamond bonds. In the SP2 hybrid structure, three of the four valence electrons of carbon enter the triangular oriented SP2 orbital and form a male bond on one plane, and the fourth electron is located in the p pi orbital on the same plane as the male bond. The pi orbitals form weak pi bonds with one or more adjacent atoms. In the sp l structure, two of the four valence electrons enter pi orbitals to form a male bond in the direction along the x axis, and the other two valence electrons enter p pi orbitals of the y axis and the z axis to form pi bonds. The DLC carbon film can be doped with various elements to obtain a doped DLC (N-DLC) film. All of them have the same bonding pattern of sp3, sp2 and sp1, so they have many properties similar to diamond film.
Diamond-like carbon (DLC) films have many excellent properties similar or comparable to those of diamond, such as high hardness, high elastic modulus, low friction coefficient, good biocompatibility, good acoustic properties, good electrical properties, and the like. DLC films have been developed to this day, are well known and concerned by more and more researchers and industry, and have great application prospects in various industrial fields. At present, DLC films have wide application in a plurality of fields such as aerospace, precision machinery, micro-electro-mechanical devices, magnetic disk memories, automobile parts, optical devices, biomedicine and the like, and are high-performance inorganic non-metallic film materials with important application prospects.
DLC films can be classified into hydrogen-free diamond-like carbon films (a-C) and hydrogenated diamond-like carbon films (a-C: H) due to differences in the source of carbon and the preparation method. Excessive hydrogen content can reduce the binding force and hardness of the coating and increase the internal stress. The hydrogen in DLC is slowly released at higher temperatures, causing the coating to work unstably. The tetrahedral amorphous carbon film (ta-C) is a class of diamond-like carbon, is a series of hydrogen-free amorphous carbon films with sp3 bond content of 80-90%, has the characteristics of high hardness, high elastic modulus, good chemical resistance and thermal shock resistance and the like, and has the advantages of uniform structure, large-area deposition, low cost, flat surface and the like. The diamond-like film is prepared by various methods such as ion beam assisted deposition, magnetron sputtering, vacuum cathode arc deposition, plasma enhanced chemical vapor deposition, ion implantation and the like. The vacuum cathodic arc deposition CVAD has high ionization rate of 60-80%, can output high-valence plasma, has the advantages of high ion energy up to 100eV, strong film-substrate binding force, low deposition temperature, high deposition rate, easy transition to industrial production and the like, is suitable for depositing large-area hard wear-resistant carbon films, and can conveniently prepare pure ta-C and doped ta-C films. The technology is characterized in that an arc is ignited by an arc ignition device in high vacuum, a cathode arc moves on the surface of a target under the maintenance of a power supply and the pushing of a magnetic field, the carbon target is evaporated by the arc, and the evaporated carbon passes through a high potential barrier in front of the target and is ionized into carbon ions under the action of an induced field effect. The carbon ions bombard the substrate at high speed under the action of negative bias of the substrate and deposit to form a film. The power supply for maintaining arc discharge has low voltage of 15-150V and high current of 20-200AThe characteristics of (1). The diameter of cathode arc spot is 1-10 micrometers, and the current density is up to
. During the deposition process, the graphite target is easy to generate a large amount of macroscopic carbon particles with different sizes under the action of high-temperature electric arc, and the particles and carbon ions are deposited on the substrate together, so that the deposited film contains a large amount of particles, the surface is rough, and the performance of the film is greatly reduced.
On the basis of CVAD, Aksenov et al developed a magnetic filtration cathodic arc technique. The main technical improvement is that a magnetic filter tube is arranged in front of a cathode arc, and the motion track of carbon ions reaching a substrate is changed by the action of a magnetic field on the ions. The magnetic filtration has strict screening effect on fine atomic groups, and can be deposited on a substrate through a magnetic field pipeline only when the charge and the size of particles are right, and un-ionized carbon molecules, atoms and large particles are deposited on the inner wall of the magnetic field pipeline, so that macroscopic carbon particles in the film are eliminated, and the quality of the ta-C film is improved. Also, to eliminate the adverse effects of macroscopic graphite particles during the deposition of ta-C thin films, some researchers have used a shield plate in front of the target to reduce the carbon particles in the film. However, both magnetic filtration and shielding plates significantly reduce the deposition rate and reduce the area of the uniform deposition zone.
SUMMERY OF THE UTILITY MODEL
The utility model aims to overcome the defects of the prior art and provide an arc ion plating device and a ta-C deposition coating device
The technical scheme adopted by the utility model is as follows: the utility model provides an electric arc ion plating device, is including having the ion plating casing of the square form cavity of straight section of thick bamboo, the square form cavity of straight section of thick bamboo one end is sealed and the other end forms the ion outlet for the opening, the ion plating casing is equipped with two installation faces that form certain contained angle or is close to sealed one end and is equipped with two installation faces that parallel at sealed one end, and two installation faces are symmetrical about the square form cavity center pin of straight section of thick bamboo, are fixed with a set of negative pole arc source module respectively on two installation faces, fix respectively and form between the target surface of target in the negative pole arc source module on two installation faces and be greater than 0 and less than or equal to 135 contained angles and set up towards the ion outlet direction or form parallel and relative relation that sets up.
And an included angle which is larger than 0 and smaller than or equal to 90 degrees is formed between the carbon target surfaces in the cathode arc source assemblies respectively fixed on the two mounting surfaces.
The ion plating shell is provided with two parallel mounting surfaces at one end close to the closed end, and the target surfaces of the targets in the cathode arc source components respectively fixed on the two mounting surfaces form a parallel and opposite relationship.
The ion plating shell is characterized in that a rectangular coil is sleeved on the outer wall of the ion plating shell and used for forming a magnetic field which has focusing and accelerating effects on positively charged particles.
A ta-C deposition coating device provided with the arc ion plating device comprises a deposition shell with a vacuum chamber, a vacuum pumping system, a bias power supply system, an auxiliary anode power supply system, the arc ion plating device and a filament ion source device;
the end of the ion plating shell, which is provided with an ion outlet, is connected with the deposition shell, and the straight cylindrical square cavity is communicated with the vacuum chamber through the ion outlet;
the deposition shell is provided with a vacuumizing port which is connected with a vacuumizing system and used for vacuumizing the vacuum chamber to form a vacuum environment; a workpiece rotating frame for placing a plated workpiece in the film plating process is arranged in the deposition shell; the workpiece rotating frame is connected with the negative pole of the bias power supply system to form negative bias;
the target material in the cathode arc source component is a carbon target, and carbon ions with positive charge are generated after electrification.
The workpiece rotating frame is in a circular ring shape, a heating pipe is arranged in the deposition shell, and the heating pipe is arranged on the inner side of the workpiece rotating frame.
The heating pipes are arranged at intervals and divided into two groups, are positioned at 0-degree and 180-degree positions with the center of the workpiece rotating frame as the center of a circle in a row, and are equal in distance from the center of the workpiece rotating frame.
The deposition shell is characterized in that a first transition target is fixed on the inner wall of the deposition shell, a second air inlet pipe is arranged close to the first transition target, the workpiece rotating frame is annular, the first transition target is provided with a plurality of pieces, the distance from the first transition target to the circle center of the workpiece rotating frame is equal, and an ion source assembly is arranged in the deposition shell.
The deposition shell is internally provided with a second transition target and a third air inlet pipe, the workpiece rotating frame is annular, the second transition target and the third air inlet pipe are arranged on the inner side of the workpiece rotating frame, the second transition target is provided with a plurality of air inlets, the distance from the second transition target to the circle center of the workpiece rotating frame is equal, and the third air inlet pipe is arranged between the second transition target.
And an auxiliary anode is arranged in the ion plating shell or the deposition shell and is connected with the power supply anode of the pulse direct-current bias power supply system.
The utility model has the following beneficial effects: after the device works, positive ions and uncharged particles are deposited on the surface of the target of the cathode arc source component, when a plated workpiece is connected with a negative electrode of the bias power supply system, the positive ions move towards the direction of the plated workpiece under the action of an electric field formed by negative bias, the positive ions are deposited on the surface of the workpiece to form a coating film, and the uncharged particles move forwards along the speed direction of the uncharged particles and are deposited on the inner wall of another carbon target or an ion plating shell. The ion plating shell with the straight cylindrical square cavity has a large volume and a short path, is directly connected with the vacuum cavity, and greatly improves the deposition rate.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the prior art descriptions will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is within the scope of the present invention for those skilled in the art to obtain other drawings based on the drawings without inventive labor.
FIG. 1 is a schematic view showing the structure of an arc ion plating apparatus according to example 1;
FIG. 2 is a schematic view showing a particle distribution in the arc ion plating apparatus according to example 1;
FIG. 3 is a perspective view of a ta-C deposition coating apparatus according to example 1;
FIG. 4 is a sectional view of a ta-C deposition coating apparatus in example 1;
FIG. 5 is a schematic view showing the structure of an arc ion plating apparatus according to example 2;
FIG. 6 is a schematic structural view of an arc ion plating apparatus according to example 3;
FIG. 7 is a schematic view showing a particle distribution in the arc ion plating apparatus in example 3;
in the figure, 1, a housing is ion-plated; 2, a cathode arc source assembly; 3, an ion outlet; 4, a rectangular coil; 5, depositing a shell; 6, an auxiliary anode; 7, rotating the workpiece; 8, vacuumizing the opening; 9, heating a pipe; 10, a first transition target; 11, an ion source assembly; 12, a second transition target material; 13, a third air inlet pipe.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings.
It should be noted that all expressions using "first" and "second" in the embodiments of the present invention are used for distinguishing two entities with the same name but different names or different parameters, and it should be noted that "first" and "second" are merely for convenience of description and should not be construed as limitations of the embodiments of the present invention, and the descriptions thereof in the following embodiments are omitted
The terms of direction and position of the present invention, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "top", "bottom", "side", etc., refer to the direction and position of the attached drawings. Accordingly, the use of directional and positional terms is intended to illustrate and understand the present invention and is not intended to limit the scope of the present invention.
Example 1:
as shown in fig. 1, an arc ion plating apparatus includes an ion plating casing 1 having a straight cylindrical square cavity, one end of the straight cylindrical square cavity is closed and the other end forms an ion outlet 3 for opening, the ion plating casing 1 is provided with two mounting surfaces forming a certain included angle at the closed end or two parallel mounting surfaces near the closed end, the two mounting surfaces are symmetrical about a central axis of the straight cylindrical square cavity, two mounting surfaces are respectively fixed with a set of cathode arcs 2, and an included angle larger than 0 and smaller than or equal to 135 ° is formed between target surfaces of targets in the cathode arc source assembly 2 respectively fixed on the two mounting surfaces and is arranged toward the ion outlet 3 direction.
And an included angle which is larger than 0 and smaller than or equal to 90 degrees is formed between the carbon target surfaces in the cathode arc source assembly 2 respectively fixed on the two mounting surfaces. In the present embodiment, it is specifically set to 90 °.
The cathode arc source assembly 2 includes a target, a target base for fixing the target, an arc striking device, and other parts necessary or unnecessary for the cathode arc source, and the specific structure can be found in the cathode arc source structures with different structural advantages such as patents CN201210444314.1, CN201811360933.6, etc. After the cathode arc source assembly 2 is powered on, the arc spot generated by the arc striking device etches on the target surface to generate ions and particles, for example, a carbon target is used to generate carbon ions and carbon particles, for example, a metal target (such as chromium) is used to generate metal ions and metal particles, the particles can be attached to the film along with the deposition of the metal ions, so that the surface of the coated film is uneven, as shown in fig. 2, in operation, the cathode arc source assembly 2 emits charged carbon ions or uncharged carbon particles, in the emission process, the initial velocity direction is the direction right ahead of the target surface, the moving direction of the charged carbon ions is deviated to the direction of the ion outlet 3 under the action of the electric field until the charged carbon ions leave from the ion outlet 3, the magnetic field formed by the rectangular coil 4 accelerates the charged carbon ions to leave from the ion outlet 3 and relatively concentrates the charged carbon ions, and the uncharged carbon particles are not influenced by the electric field and the magnetic field, the deposition rate is greatly increased by advancing along the initial speed direction until the deposition is carried out on the side wall of the ion plating shell 1, the volume of the ion plating shell with the straight cylindrical square cavity is large, the path is short, and the deposition rate is directly connected with the vacuum cavity.
The ion plating shell 1 is sleeved with a rectangular coil 4 on the outer wall, and the rectangular coil 4 is used for forming a magnetic field which has focusing and accelerating effects on positively charged particles.
A ta-C deposition coating device is provided, as shown in fig. 3 and 4, and comprises a deposition shell 5 with a vacuum chamber, a vacuum pumping system, a bias power supply system, an auxiliary anode power supply system, an arc ion plating device and a filament ion source device;
one end of the ion plating shell 1, which is provided with an ion outlet 3, is connected with a deposition shell 5, and the straight cylindrical square cavity is communicated with the vacuum chamber through the ion outlet 3;
the deposition shell 5 is provided with a vacuum pumping port 8 which is connected with a vacuum pumping system and used for pumping the vacuum chamber to form a vacuum environment; a workpiece rotating frame 7 for placing a plated workpiece in the film plating process is arranged in the deposition shell 5; the workpiece rotating frame 7 is connected with the negative pole of the bias power supply system to form negative bias;
the target material in the cathode arc source component 2 is a carbon target, and positive charged carbon ions are generated after electrification.
As shown in fig. 3, there may be a plurality of cathode arc source assemblies 2, for example, 3 cathode arc source assemblies 2 in one group of cathode arc source assemblies 2 on each mounting surface of the present embodiment, wherein "one group" does not refer to the number of cathode arc source assemblies 2, but groups all cathode arc source assemblies 2 disposed on one mounting surface.
The workpiece rotating frame 7 is annular, a heating pipe 9 is arranged in the deposition shell 5, and the heating pipe 9 is installed on the inner side of the workpiece rotating frame 7. The heating pipes 9 are used for heating the workpiece in the coating process, in this embodiment, the heating pipes 9 are provided with a plurality of heating pipes (12 heating pipes as shown in the drawing) and are installed at intervals, the plurality of heating pipes 9 are divided into two groups, the two groups are respectively located at 0 degree and 180 degrees with the center of the workpiece rotating frame 7 as the center of the circle, and the distances from the center of the workpiece rotating frame 7 are equal.
The deposition device is characterized in that a first transition target material 10 is fixed on the inner wall of the deposition shell 5, a second air inlet pipe is arranged close to the first transition target material 10, the workpiece rotating frame 7 is annular, the first transition target material 10 is provided with a plurality of materials, the distances from the first transition target material 10 to the circle center of the workpiece rotating frame 7 are equal, and an ion source assembly 11 is arranged in the deposition shell 5. The deposition device is characterized in that a first transition target material 10 is fixed on the inner wall of the deposition shell 5, a second air inlet pipe is arranged close to the first transition target material 10, the workpiece rotating frame 7 is annular, the first transition target material 10 is provided with a plurality of materials, the distances from the first transition target material 10 to the circle center of the workpiece rotating frame 7 are equal, and an ion source assembly 11 is arranged in the deposition shell 5. In this embodiment, the first transition target material 10 has 4 groups, which are two groups of Cr, Ti, Zr, and other metal targets and two groups of WC targets, respectively, the two groups of Cr, Ti, or Zr, and other metal targets are located at 45 degrees and 225 degrees around the center of the vacuum chamber, respectively, the two groups of WC targets are located at 135 degrees and 315 degrees around the center of the vacuum chamber, respectively, and the distances from the 4 groups of first transition target materials 10 to the center of the workpiece turret 7 are equal. In this embodiment, the ion source in the ion source assembly 11 employs a filament, and the filament is connected to the positive and negative electrodes of the pulsed dc bias power supply system to generate electrons during the operation.
A second transition target material 12 and a third air inlet pipe 13 are installed in the deposition shell 5, the workpiece rotating frame 7 is annular, the second transition target material 12 and the third air inlet pipe 13 are installed on the inner side of the workpiece rotating frame 7, the second transition target material 12 is provided with a plurality of materials, the distance from the second transition target material 12 to the circle center of the workpiece rotating frame 7 is equal, and the second air inlet pipe 12 is arranged between the second transition target materials 12. The second transition target 12 is a cylindrical target and is installed with the center of the vacuum chamber as the center of the circle, in this embodiment, the second transition target 12 has four groups, which are two groups of metal targets such as Cr, Ti, or Zr and two groups of WC targets, respectively, and are installed in the directions of 70 degrees, 110 degrees, 250 degrees, and 290 degrees with the center of the vacuum chamber as the center of the circle, and are equal to the center of the vacuum chamber. The third air inlet pipe 13 is installed inside the workpiece rotating frame 7, and specifically, two air inlet pipes are provided, which are respectively located at 90 degrees and 270 degrees around the center of the vacuum cavity, located in the middle of the second transition target material 12, and used for ventilating the second transition target material 12 during operation.
In the present embodiment, Cr targets are specifically used as the metal targets in the first transition target 10 and the second transition target 12.
An auxiliary anode 6 is arranged in the ion plating shell 1 or the deposition shell 5, the auxiliary anode 6 is connected with the positive electrode of the power supply of the pulse direct current bias power supply system, and in this embodiment, the auxiliary anode 6 is located in the ion plating shell 1 at a position close to the deposition shell 5.
The embodiment sets up multiunit target and trachea set through deposit the casing inboard and the work piece revolving rack is inboard in the vacuum chamber for it is faster when using sputter coating to plate the Cr transition layer, thereby improves deposition rate.
The process flow for depositing and coating the film by the ta-C film deposition equipment of the embodiment is as follows:
1. installing a workpiece: mounting the plated workpiece on a workpiece rotating stand 7;
2. vacuumizing: vacuumizing the vacuum cavity of the deposition shell 5 to the background vacuum through the vacuumizing port 8 by using a vacuum pumping system;
3. heating the workpiece: heating the workpiece by using a heating pipe 9;
4. bombarding and purifying the workpiece: turning on a bias power supply system, connecting a filament of the filament ion source device to an alternating current filament heating power supply to generate electrons, connecting a workpiece rotating frame 7 to the negative electrode of the bias power supply system, introducing argon, and performing workpiece cleaning action under the action of bias voltage through high-density gas plasma generated by the filament ion source;
5. plating a Cr transition layer: opening Cr targets in the first transition target 10 and the second transition target 12, opening a second air inlet pipe and a third air inlet pipe 12 in the vacuum cavity, and introducing argon to carry out film coating on a Cr transition layer;
6. plating a WC transition layer: opening WC targets in the first transition target material 10 and the second transition target material 12, opening a second air inlet pipe and a third air inlet pipe 12 in the vacuum cavity 2, and introducing argon to carry out coating of a WC transition layer;
7. and (3) plating a ta-C film: after the WC transition layer is coated, the sputtering target material and the gas source pipe in the vacuum cavity are closed, vacuum pumping is carried out again until the sputtering target material and the gas source pipe are in background vacuum, the cathode arc source component 2 is opened, the electromagnetic coil group is electrified, and carbon ions are generated and deposited to form a ta-C film; high-density carbon ions generated by the carbon ion generating chamber enter the deposition shell 6, and the density and the flux of the carbon ion flow entering the deposition shell 6 are adjusted by adjusting the arc current and the electromagnetic coil current; firstly, opening high bias voltage (1200-3500V) on a workpiece, adjusting the density and flux of carbon ion flow to be in a smaller state, and performing high-pressure bombardment implantation to form a firm C implantation layer; secondly, adjusting bias voltage to be in a deposition state (50-1500V), adjusting the density and flux of carbon ion flow to be in the deposition state, depositing the ta-C film, and forming the stress-controllable ta-C film through periodic adjustment of the bias voltage;
8. and (5) closing the power supply and the gas when the preset film thickness is reached, cooling to room temperature, filling the atmosphere, and taking out the workpiece.
In the step 6 and the step 7, the components of the transition film layer can be adjusted through adjusting the power of different targets, so that a pure metal Me film, a mixed metal Me film, a metal carbide film MeC and the like can be formed.
Example 2:
the structure and the coating process of this embodiment are substantially the same as those of embodiment 1, wherein the largest difference is that the arrangement of the internal structure of the arc ion plating apparatus is different, as shown in fig. 5, an included angle of 60 ° is formed between the target surfaces of the targets in the cathode arc source assembly 2 on the two mounting surfaces of this embodiment, and a transition surface is provided between the two mounting surfaces of this embodiment, so as to avoid the installation of the cathode arc source assembly 2 with insufficient space.
Example 3:
the structure and the coating process of this embodiment are substantially the same as those of embodiment 1, wherein the largest difference is that the arrangement of the internal structure of the arc ion plating apparatus is different, as shown in fig. 6, the target surfaces of the targets in the cathode arc source assembly 2 on the two mounting surfaces of this embodiment are arranged in parallel with a certain distance, as shown in fig. 7, the generated uncharged carbon particles are concentrated in the cavity between the target surfaces of the targets in the cathode arc source assembly 2 on the two mounting surfaces until moving to the target surface of the opposite target, and the charged carbon ions leave the cavity between the two target surfaces under the action of the electric field formed by the negative bias voltage and relatively intensively leave from the ion outlet 3, as shown in embodiment 1, a rectangular coil 4 is added to make the charged carbon ions leave at a faster speed and in a focused manner.
It will be understood by those skilled in the art that all or part of the steps in the method for implementing the above embodiments may be implemented by relevant hardware instructed by a program, and the program may be stored in a computer-readable storage medium, such as ROM/RAM, magnetic disk, optical disk, etc.
The above disclosure is only for the purpose of illustrating the preferred embodiments of the present invention, and it is therefore to be understood that the utility model is not limited by the scope of the appended claims.
Claims (10)
1. An arc ion plating apparatus, characterized in that: including ion plating casing (1) that has the square form cavity of straight section of thick bamboo, the square form cavity of straight section of thick bamboo one end is sealed and the other end forms ion outlet (3) for the opening, ion plating casing (1) is equipped with two installation faces that form certain contained angle or is close to sealed one end and is equipped with two installation faces that parallel in sealed one end, and two installation faces are symmetrical about the square form cavity center pin of straight section of thick bamboo, are fixed with a set of negative pole arc source module (2) on two installation faces respectively, fix respectively between the target surface of target in negative pole arc source module (2) on two installation faces and form contained angle and be greater than 0 and 135 and towards ion outlet (3) direction setting or form parallel and the relation of relative setting.
2. The arc ion plating apparatus according to claim 1, characterized in that: and an included angle which is larger than 0 and smaller than or equal to 90 degrees is formed between the carbon target surfaces in the cathode arc source assemblies (2) respectively fixed on the two mounting surfaces.
3. The arc ion plating apparatus according to claim 1, characterized in that: two parallel mounting surfaces are arranged at one end, close to the closed end, of the ion plating shell (1), and parallel and opposite arrangement relations are formed between target surfaces of targets in the cathode arc source components (2) which are respectively fixed on the two mounting surfaces.
4. The arc ion plating apparatus according to claim 1, characterized in that: the ion plating device is characterized in that a rectangular coil (4) is sleeved on the outer wall of the ion plating shell (1), and the rectangular coil (4) is used for forming a magnetic field which has focusing and accelerating effects on positively charged particles.
5. A ta-C deposition coating apparatus provided with the arc ion plating apparatus according to any one of claims 1 to 4, characterized in that: comprises a deposition shell (5) with a vacuum chamber, a vacuum-pumping system, a bias power supply system, an auxiliary anode power supply system, an arc ion plating device and a filament ion source device;
one end of the ion plating shell (1) provided with an ion outlet (3) is connected with the deposition shell (5), and the straight cylindrical square cavity is communicated with the vacuum chamber through the ion outlet (3);
the deposition shell (5) is provided with a vacuumizing port (8) which is connected with a vacuumizing system and used for vacuumizing the vacuum chamber to form a vacuum environment; a workpiece rotating frame (7) for placing a plated workpiece in the film plating process is arranged in the deposition shell (5); the workpiece rotating frame (7) is connected with the negative pole of the bias power supply system to form negative bias;
the target material in the cathode arc source component (2) is a carbon target, and positive charged carbon ions are generated after electrification.
6. The ta-C deposition coating device according to claim 5, characterized in that: the workpiece rotating frame (7) is annular, a heating pipe (9) is arranged in the deposition shell (5), and the heating pipe (9) is installed on the inner side of the workpiece rotating frame (7).
7. The ta-C deposition coating device according to claim 6, characterized in that: the heating pipes (9) are arranged at intervals, the heating pipes (9) are divided into two groups, the two groups are arranged at 0-degree and 180-degree positions with the center of the workpiece rotating frame (7) as the circle center, and the distances from the centers of the workpiece rotating frames (7) are equal.
8. The ta-C deposition coating device according to claim 5, characterized in that: the deposition device is characterized in that a first transition target (10) is fixed on the inner wall of the deposition shell (5), a second air inlet pipe is arranged close to the first transition target (10), the workpiece rotating frame (7) is annular, the first transition target (10) is provided with a plurality of materials, the distance from the first transition target to the circle center of the workpiece rotating frame (7) is equal, and an ion source assembly (11) is arranged in the deposition shell (5).
9. The ta-C deposition coating device according to claim 5, characterized in that: the deposition shell (5) is internally provided with a second transition target (12) and a third air inlet pipe (13), the workpiece rotating frame (7) is annular, the second transition target (12) and the third air inlet pipe (13) are arranged on the inner side of the workpiece rotating frame (7), the second transition target (12) is provided with a plurality of materials and has the same distance to the circle center of the workpiece rotating frame (7), and the third air inlet pipe (13) is arranged between the second transition target (12).
10. The ta-C deposition coating device according to claim 5, characterized in that: an auxiliary anode (6) is arranged in the ion plating shell (1) or the deposition shell (5), and the auxiliary anode (6) is connected with the power supply anode of the bias power supply system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123451867.3U CN216891174U (en) | 2021-12-30 | 2021-12-30 | Arc ion plating device and ta-C deposition coating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123451867.3U CN216891174U (en) | 2021-12-30 | 2021-12-30 | Arc ion plating device and ta-C deposition coating device |
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| Publication Number | Publication Date |
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| CN216891174U true CN216891174U (en) | 2022-07-05 |
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|---|---|---|---|
| CN202123451867.3U Active CN216891174U (en) | 2021-12-30 | 2021-12-30 | Arc ion plating device and ta-C deposition coating device |
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| CN (1) | CN216891174U (en) |
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Inventor after: Zhang Ke Inventor after: Lang Wenchang Inventor after: Zhang Zuhang Inventor after: Zhang Zhenhua Inventor after: Lin Qiao Inventor before: Zhang Ke Inventor before: Lang Wenchang Inventor before: Zhang Zuhang Inventor before: Zhang Zhenhua Inventor before: Lin Qiao |