JPH02194167A - Vacuum arc evaporation device - Google Patents

Abstract

PURPOSE:To obtain an excellent film in an industrial scale wherein mixing of molten particles from an evaporation face is regulated to the lower limit by arranging a coaxial air core coil at the position between an arc evaporation source and a base plate in the front of the central axial line of the evaporation face of the arc evaporation source and exciting this air core coil. CONSTITUTION:A film is formed on a base plate 6 in a vacuum chamber 2 by leading plasma of film forming material generated from a vacuum arc evaporation source 4. A coaxial air core coil 1 is arranged to the outside of the tubular part 3 of the chamber at the position between the evaporation source and the base plate 6 in the front of the central axial line X of the evaporation face 5 of the evaporation source 4 of a vacuum arc vapor deposition device. The evaporation source 4 is placed at such position that the lines 7 of magnetic force of a magnetic field diverge outward in the radial direction from the end of the coil by excitation of the coil 1. The magnetic field directed to the outside has a component parallel to the evaporation face 5 and orthogonally crosses ions and electrons emitted from the arc spot of the evaporation source 4. Since the arc spot is forcedly moved by electromagnetic mutual repulsive action, the arc spot is rounded and moved on the evaporation face 5 at high velocity. Therefore generation of a molten part is inhibited around the arc spot.

Description

Detailed Description of the Invention (Field of Industrial Application) The present invention is used for forming coatings in the fields of wear-resistant coatings for cutting tools, bearings, gears, etc., electronic components, printed circuits, optics, magnetic devices, etc. This invention relates to improvements in vacuum arc evaporation equipment.

(Prior art) The vacuum arc evaporation method basically uses an evaporation source (
Coating material particles are generated by arc discharge from the cathode,
This is a method in which this is deposited on a substrate to which a negative bias voltage is applied, and high-energy cathode material atoms are emitted as a plasma beam from the cathode, which is the evaporation source, due to a high arc current, and between the cathode and the substrate. It is accelerated by the applied voltage and forms a film on the substrate. One of the features of this vacuum arc evaporation method is that because the energy of the incident particles is high, it is possible to obtain a film with high density, excellent strength and durability, and it is attracting industrial attention. The main points are that the film formation rate is fast and the productivity is high.

The advanced conventional technology of vacuum arc evaporation will be supplemented with representative examples.

Prior art example (I), Japanese Patent Publication No. 58-3033.

In summary, ``an arc discharge is generated between an evaporation source material and an arc electrode in a vacuum chamber, and a beam of particles consisting of atoms and ions of the evaporation source material is ejected at a low voltage of 100 volts or less. 300 amperes of arc discharge current imparting a kinetic energy of about 10 to 100 electron volts to each particle to deposit said particles on the surface of a substrate, and an apparatus for carrying out this method includes: In order to improve the beam directivity, it is disclosed that the anode is formed into a truncated conical tube shape to determine the beam directivity direction, and the beam width is controlled by controlling its aperture degree and diameter expansion angle. It is stated that the use of magnetic fields is effective in improving the properties.

Prior art example (■), Japanese Patent Publication No. 52-14690.

In summary, ``In a vacuum metal coating system that includes an evaporation source metal cathode placed on a cooling bed, a trigger electrode that generates a cathode point of discharge on the evaporation surface of the cathode, an exhaust chamber, and an arc electrode, the anode is an envelope. , the evaporation surface of the cathode faces the inner space of the envelope, and the cathode spot holding device controls the evaporation surface of the cathode and prevents the cathode spot from transferring from the evaporation surface to the non-evaporation surface of the cathode. This structure improves arc stability and cathode material utilization.

Prior art example' (■) Conventional vacuum arc evaporation techniques, including those disclosed in the above-mentioned two patent publications, have the disadvantage that, in addition to plasma particles consisting of ions and neutrons generated from the cathode evaporation surface, molten particles of the cathode material, that is, plasma Macro particles, macro drop left, etc., which are larger than particles, are generated, and these are mixed into the deposited film on the substrate, causing deterioration of the film surface roughness and reduction of adhesion, and in the case of reactive coating films. There is a problem that molten particles are incorporated into the film without reacting.

As a conventional technique for solving this problem, there is a magnetic field utilizing device shown in FIG. The plasma generated from the source is guided through the pipe (d) by bending under the action of the magnetic field of the solenoid (C) and leading to the substrate (b). However, the molten particles are not affected by the magnetic field and cannot reach the substrate (which is located in an optically shadowed position).
In this way, it is possible to form a high-quality film that does not contain molten particles.

Prior art example (■), Japanese Patent Publication No. 60-36468.

This device is another example of a vacuum arc evaporation device that uses a magnetic field, and as shown in FIG.
) in front of the tubular anode (f) and the solenoid (g
), and the feature is that the number of turns per unit length of the part around the evaporation surface of the solenoid is more than twice that of other parts, and the magnetic field converges toward the cathode, as shown by the dotted line. .

It is said that the effect of the size and shape of this magnetic field makes it possible to achieve efficient use of evaporated materials due to the stability of the arc and the effect of the magnetic field guiding plasma.

(Problems to be Solved by the Invention) The vacuum evaporator of the prior art example (III) can avoid the problem of molten particles getting mixed into the film, but as shown in the figure, the device is large-scale and the usable space is limited. The narrowness, difficulties in implementation control, and small effective coating area make it unsuitable for implementation on an industrial scale.

Prior art example (IV) may be more practical than (III), but Publication No. 81I! As described in 1.1, the neutral components of the evaporated material reach the substrate in the same way as in the prior art, and therefore the problem of molten particles getting mixed into the coating is the same as in the prior art examples (1) and (II). remains unresolved.

(Means for Solving the Problems) The present invention solves the above-mentioned problems of the vacuum arc evaporation apparatus of the prior art, and minimizes the problem of defective coatings due to the contamination of molten particles from the evaporation surface. It is an object of the present invention to provide an improved vacuum arc evaporation apparatus that is capable of performing the following steps, meets the requirements for an industrial and economical apparatus, and realizes the characteristics of vacuum arc evaporation technology without any problems.

As a solution to this objective, the vacuum arc evaporation apparatus of the present invention uses a vacuum arc evaporation method in which plasma of a film forming material generated from an arc evaporation source under vacuum is guided to a substrate to form a film. As a device, at least one coaxial air-core coil is installed in front of the central axis of the evaporation surface of the arc evaporation source at a position between the substrate and the magnetic field leaking from the end of the coil due to excitation of the coil is radially smaller than the central axis. The evaporation surface is placed at a distance that diverges outward in the direction, and while the arc spot generated on the evaporation surface is orbited at high speed by the radial component of the magnetic field that diverges outward, the arc spot generated by the arc spot is The method is characterized in that the plasma is guided onto the substrate by passing through the vacuum space within the coil along the lines of magnetic force of the magnetic field to perform the coating.

(Function) The technical basis of the device of the present invention is explained as follows based on the principle of operation and in accordance with the configuration of the device.

Generally, as shown in Figure 1, when an air-core coil (1) is excited and there is no ferromagnetic object around it, the lines of magnetic field that are formed have a component in the direction of the central axis (X) at position (B) inside the coil. However, as it moves away from both ends of the coil, the lines of magnetic force (7) diverge radially outward from the axis (X), making a large detour around the outside of the coil and connecting to the lines of magnetic force on the opposite side of the coil. .

In the present invention, the evaporation surface of the vacuum arc evaporation source is placed at the position (A) where the magnetic field diverges outward, and the evaporated plasma flow is guided along the magnetic lines of force and passes through the coil internal position (B), and the opposite position ( A configuration is provided in which the coating is applied to the substrate installed in C).

Figure 2 schematically shows this configuration as a vacuum evaporation device, in which an air-core coil (1) is placed at a position (B) outside the tubular part (3) of a vacuum chamber (2) made of non-magnetic material.
In relation to this, the vacuum arc evaporation source (4) is placed at position (A) in the chamber (2) so that the center of the evaporation surface (5) coincides with the central axis (X), and at position (C). The substrate (6) is placed on. (7) shows the lines of magnetic force. (8) is a plasma generating arc confinement ring.

Generally, when a magnetic field is applied to plasma, the plasma tends to move in a direction along the lines of magnetic force and has a property that it is difficult to move in a direction perpendicular to the lines of magnetic force. This is due to the effect of so-called "Larmor swirling motion," in which charged particles move in a manner that wraps around magnetic lines of force when they move in a space with magnetic force. In order to guide plasma using this effect, if the electrons in the plasma are guided by a magnetic field, the ions will move to areas with high negative charge electron density due to the electrostatic effect, so the number of electrons that can be trapped will be It is preferable to apply a magnetic field of 10 Gauss or more.

As a result of this, the evaporation surface (5) of the cathodic arc source (4)
The plasma generated at ) flows along the illustrated magnetic lines of force (7) and reaches the substrate (6). This phenomenon can be seen in the prior art example (I
[)(IV) should also occur.

This effect has the function of relatively reducing the number of molten particles directed toward the substrate. That is, this induction effect does not act on neutral molten particles, whereas ions are selectively guided to the substrate.

Next, in the present invention, in contrast to the prior art example (IV) in which the arc evaporation source is placed at a position where the magnetic field converges, the arc evaporation source is placed at a position where the lines of magnetic force of the magnetic field from the end of the coil diverge radially outward. Place an arc evaporation source on the This outward magnetic field has a radial component, that is, a component parallel to the evaporation surface, and is orthogonal to the ions and electrons flowing out from the arc spot of the arc evaporation source, forcing the arc spot to move due to electromagnetic mutual repulsion. Therefore, the arc spot moves around the evaporation surface at high speed. As a result, the time the arc spot stays in one place is shortened, the generation of molten parts around the arc spot is suppressed, the amount of molten particles generated from the evaporation surface is reduced, and the diameter of the molten particles is reduced. It produces the effect of changing.

By combining the above two effects, the present invention speeds up the movement of the arc spot using the radially outward magnetic field component to generate plasma with less molten particles mixed in from the evaporation surface, and further selectively collects only ions using the magnetic field. By guiding, a reduction in the incorporation of melt flow particles into the coating is achieved.

Furthermore, the present invention has the effect that a plasma flow can be obtained in a convergent state, which can be advantageously utilized in practice. That is, the plasma flow is guided along the lines of magnetic force, is once converged to a diameter smaller than the evaporation surface at a spatial position inside the coil, and then diverges again. At this time, if the substrate is placed close to the coil, a small area can be coated with a highly concentrated plasma stream.

The shape, size, and coating location of the substrate to be coated are not limited. If the substrate is, for example, a drilling drill, then only the cutting edge is important to coat, so the cutting edge can be placed close to the coil to take advantage of the plasma focused flow effect. Of course, if a large area needs to be coated, the substrate can be placed at a considerable distance from the coil and the plasma stream diverged along the magnetic field can be used.

Regarding the convergence of plasma flow, prior art (1) (II
), the evaporated ions inevitably spread out and diverge from the evaporation surface, and in prior art example (IV), the plasma flow moves along the magnetic lines of force but spreads out from the evaporation surface.

Furthermore, another advantageous effect simultaneously obtained with the present invention is that the arc spot moves around the evaporation surface at high speed, so that the arc spot runs all over the evaporation surface, which spreads the evaporation material uniformly. It has the effect that it can be used up.

Regarding prior art (1) and (II), if no special control is applied, the arc spot may stay only in a part of the evaporation surface, and the wear of that part tends to progress. By placing a coil on the back of the material and creating a magnetic field similar to that of a planar magnetron sputtering device,
A method of forcibly moving the arc spot is known.

In the present invention, the evaporated material is consumed uniformly without providing such a special mechanism.

(Examples) Hereinafter, the present invention will be described in more detail based on examples with reference to the accompanying drawings.

FIG. 3 shows essential parts of an example of the vacuum arc evaporation apparatus of the present invention. Since this is similar to the schematic diagram in FIG. 2, equivalent parts will be indicated by the same reference numerals and the explanation thereof will be referred to.

To supplement the explanation, the vacuum arc evaporation source (4) made of Ti is connected to the negative side of the arc power source (9), and there is BN around it.
A vacuum chamber (2) and an insulator 00 are equipped with an arc confinement ring (8) made of
) and has a water cooling mechanism.
The evaporation surface faces the front of the vacuum chamber (2). 0 indicates an arc ignition mechanism. The air-core electromagnetic coil (1), which is arranged after the same central axis (X) on the outside of the tubular part (3) of the chamber between the substrate (6), which is not shown separately in this figure, is in this example single. However, multiple coils may be arranged. The plasma generated on the evaporation surface is guided to the substrate (6) in the chamber through a tubular part (3) that also serves as an anode inside the coil.

In this example, the evaporation surface (5) of the evaporation source cathode is φ100, the center diameter of the coil (1) is φ184, and the distance from the end of the coil to the cathode evaporation surface is 80 mm.

The shape of the magnetic field when the coil is excited at 3000 AT is shown in FIG. 4, and the magnetic field strength at each part is shown in Table 1 in units of Gauss.

Table 1 Magnetic field strength at each part (unit, Gauss) As is known from Table 1, the radial component of the magnetic field on the cathode evaporation surface (5) is not uniform.

That is, on the central axis (X), it is naturally 0 due to the symmetry of the shape, and increases toward the periphery. Here, the operating situation will be explained by regarding a position at a radius of 35 mm that is 70% of the outer diameter of the evaporation surface (inner and outer areas are approximately equal) as a representative point.

From FIG. 4 and Table 1, it is known that the magnetic lines of force excited by the coil diverge as they move away from the central axis (X) and have a radial component at the cathode evaporation surface.

In the above device, when a vacuum arc discharge is generated by the arc ignition mechanism θ while supplying electric power from the arc power source (9), it can be visually observed that the plasma flow from the evaporation surface (5) is guided along the magnetic field lines. It can be observed. That is, the light emitting part of the plasma flow generated from the evaporation surface converges inside the coil along the magnetic field to a diameter of about 60% of the evaporation surface, and then diverges into the opposite side of the vacuum chamber. At this time, the arc spot on the evaporation surface (5) was moving circumferentially at high speed.

With this device, a substrate made of SOS 304 stainless steel (6
) at a position 350 mm from the evaporation surface (5), and the operating conditions were: excitation of the coil (1) at 13,000 At, arc current at 100 A, substrate bias voltage at -50 V, and Nt gas pressure in the vacuum chamber (2) at 10 mTorr.
Reactive vacuum arc deposition of the coating was performed and the coating thickness was approximately 2.5 μm, as shown in FIG.
M) As shown in the photograph, a good coating with less contamination of molten particles could be achieved. SEM of the coating in Figure 6
For comparison, the photograph shows prior art example (1) (according to the conventional method corresponding to [3), the substrate was placed at a position 200 mm from the evaporation surface where almost the same evaporation rate as above was obtained, and the other conditions were the same. It is known that the present invention provides significantly better results when compared with the coatings shown in Figure 1.

Furthermore, Table 2 shows the results of counting the surface roughness (Ra value) and the density of molten particles with a diameter of 0.6 μm or more by image processing based on SEM images for the coating according to the present invention and the coating of the comparative example.

Table 2 □ From the quantitative data, it is known that the present invention can significantly improve the surface roughness and reduce the number of fused particles by nearly 1710.

Prior art example (I[
Compared to [), the device of the present invention has a compact hour wheel structure and is easy to implement industrially.

Next, in order to investigate the relationship between the amount of molten particles mixed into the coating and the magnetic field strength, coating was performed while changing the excitation of the coil to OAT, 1000^T, and 2000AT.As the excitation increased, the evaporation surface It was observed that the swirling motion of the arc spot became faster, and the results of the SEM photographs of the coatings were obtained in FIGS. 7, 8, and 9, respectively.

When the coil is not excited, there is a lot of molten particles mixed in, as shown in the photo in Figure 7, but when the coil is excited at 2000^T, as shown in the photo in Figure 9, there is less molten particles mixed in, and at 3000A.
The results obtained are almost the same as those shown in FIG. 5 for T excitation. In the case of excitation 1000AT, as shown in the photograph in Figure 8, although there are fewer molten particles mixed in than in the case of non-excitation in Figure 7, a considerable number remain, and the particle size is also large. It is known that the reduction of molten particles progresses between 100OAT and 2000A
The radial components on the evaporation surface at T are about 7 Gauss and 13 Gauss, respectively, so the radial component of this magnetic field is about 1
When it exceeds 0 Gauss, it is judged that the reduction of molten particles progresses.

Furthermore, from the viewpoint of efficiently guiding plasma to the substrate in the present invention, FIG. 10 shows the results of investigating the influence of the excitation current on the film formation rate.

From FIG. 10, it is known that the film formation rate increases as the excitation intensity increases, but tends to be saturated at 3000 AT or more.

This phenomenon can be explained by the following physical phenomenon.

That is, when a magnetic field is applied, electrons are trapped by the magnetic field lines by Larmor motion, and are limited to motion parallel to the magnetic field lines. In order to be able to utilize this phenomenon, the radius of the Larmor motion described above must be the size of the actual device, For example, it needs to be sufficiently small compared to the diameter of the evaporation surface. This Larmor radius is expressed by the formula, m
It is given by V/eB (m: electron mass, V: electron velocity, e: elementary charge, B: magnetic field strength). In other words, the Larmor radius is inversely proportional to the magnetic field strength, so if the magnetic field becomes stronger due to excitation, the Larmor radius will become smaller.
Electrons will be more strongly trapped in the magnetic field.

As an example, assuming that the electrons immediately after being emitted from the arc spot have an energy of about 20 eV, which corresponds to the discharge voltage, the Larmor radius is calculated in a magnetic field of 60 Gauss near the evaporation surface when excited at 3000 AT. is approximately 2.5 m. Comparing the diameter of this Larmor motion with the diameter of the evaporation surface, it is about 1/20, and it can be said that electrons are sufficiently trapped in this magnetic field.

Although it is difficult to definitively determine how much magnetic field should be applied depending on the relationship with other implementation conditions,
From Fig. 10, the film formation rate is saturated at 3000 AT, and 0
Judging from the fact that it tends to improve rapidly at ~100 OAT, excitation of at least 1000 AT or more is required.
3QOOAT is determined to be suitable. In the present invention, the magnetic field is the weakest near the evaporation surface due to divergence, and the Larmor radius is maximum, so the magnetic field strength at this position is at least 20 Gauss or more in order to efficiently induce magnetic plasma. It has been determined that a magnetic field of 60 Gauss is preferably required.

In the above embodiments, the evaporation surface and the coil are described as circular, but each figure is considered to be a cross-sectional shape, and the evaporation surface and the coil may be configured in other shapes, for example, rectangular. Further, the present invention is not limited by the length or number of coils.

For example, it is preferable to extend the tubular part (3) in FIG. 3a in the axial direction, to make the coil (1) longer in the axial direction, or to arrange two or more coils in a row, within a range that does not impede industrial practicality. . This is essentially the same as the embodiment shown in FIG. 3a, but since the plasma is guided over a longer distance, the number of molten particles can be further reduced due to the geometrical effect.

In addition, by utilizing the effect of obtaining a converged plasma beam for the same reason as above, an aperture slightly larger than the diameter of the plasma stream squeezed along the magnetic field is provided in the inner part of the coil (1). It is also preferable to install an orifice. This is because, while this orifice allows ions guided by the magnetic field to pass through, its geometric shape has a large blocking effect on neutral molten particles that do not have an induction effect.

Furthermore, from the viewpoint of economy, a preferred embodiment is a device in which at least a portion of an air-core coil that forms a magnetic field is excited by a mark discharge current.

Figure 3b schematically depicts this embodiment. The illustration numbers are the same as those in FIG. 3a, and redundant explanation will be omitted. Here, the air-core coil is divided into (1a) and (1b), and the air-core coil (1a) is excited by the arc discharge current supplied from the mark power source (9) as shown. For example, if a coil with 30 turns is prepared and a vacuum arc discharge is generated with an arc current of 100 A, excitation of 3000 AT is possible, which clearly has the same effect as the physical phenomenon described earlier with reference to Figure 3a. has.

Moreover, no special power source is required for coil excitation, which helps simplify the system and is economical.

Although the coil (1b) is not essential, the coil (1a)
) alone causes inconvenience when it is desired to control the discharge current and magnetic field independently, so this can be compensated for. In other words, a certain proportion of the magnetic field is excited by the discharge current, and the coil (lb)
By compensating for this and obtaining a predetermined strength, control independence can be maintained, while the excitation power source for the coil (1b) can be significantly smaller and more economical than in the previous embodiment. .

The key point of the present invention is to reduce the proportion of molten particles, so rather than selecting a material with a low melting point such as A1, which originally generates a large number of molten particles, as the evaporation material, Ti and Zr.
5If, V, Nb, Ta, Cr.

More preferable results can be obtained by selecting metals with relatively high melting points such as Mo and W, or alloys containing these as main components, as the evaporation material. In other words, in the case of a low-melting point metal that originally has a large number of molten particles, even if the molten particles are reduced by the present invention, there will still be a large amount of contamination, making it impractical as a coating. This is because, in addition to fewer particles being generated, the proportion of ions affected by the magnetic field increases, and the proportion of vapor guided close to the substrate out of the total evaporation amount increases.

Furthermore, in the case of the above-mentioned high-melting point metals, in many cases, they combine with each element of N5C10 to form compounds with high functions such as high hardness, so in many cases, the above-mentioned high-melting point metals are reactive with nitrogen, hydrocarbons, oxygen, etc. Deposited in the presence of gas. It is well known to those skilled in the art that the reactant gases present during evaporation form a thin layer of higher melting compounds on the evaporation surface, suppressing the generation of molten particles. From this, it can be said that reactive coating, which is performed using the above-mentioned high melting point metal as an evaporation material while introducing a reactive gas, is the most suitable mode for carrying out the present invention.

In experiments conducted by the inventor using a combination of Ti, Zr, and nitrogen gas, when the nitrogen gas was gradually increased, due to the effects of the present invention and the nitrogen gas, the nitrogen partial pressure of l ya Torr was significantly increased. A decrease in molten particles mixed into the coating was observed.

Furthermore, according to the method of the present invention, under suitable substrate bias voltage conditions, not only the number of molten particles is reduced;
The properties of the film itself also allow for good coating.

In other words, the properties of the high melting point metal compound film formed according to the present invention in the course of the experiments of the present invention were significantly changed by the substrate bias voltage, and the film performance was the highest that was previously obtained by controlling the substrate bias voltage. It turns out that something of this standard can be easily achieved.

For example, in the apparatus of the embodiment described above, the substrate is placed directly facing the evaporation surface at a position of 350 ff1ffl, the coil excitation is 3000 AT, the arc current is 100 A, N,
Gas pressure 10mTorr, substrate temperature 300-350℃
The hardness of the 2.0-2.5 μm TiN film formed by
Table 3 shows the analysis results by line diffraction. As can be seen from this result, the bulk hardness is 1800 to 2100 kg/m11
+'' TiN, substrate bias voltage -50V to -1
In the range of 50V, the TiN film has a very hard coating of 2,600 to 3,100 kg/mm", which is the highest standard for a TiN film made by vacuum evaporation.Furthermore, the X-ray diffraction results also show that it has excellent wear resistance in the above substrate bias voltage range. A film oriented in the (111) plane, which has excellent properties and is suitable for applications such as cutting tools, has been obtained.
No. 123 proposes the X-ray diffraction intensity ratio 1 (111)/I (200) from the (111) plane and the (200) plane as an index showing the wear resistance performance of TiN, and I (111) )/I (200)>75 is considered good, and as is known from Table 3, the above bias voltage range is also judged to be good based on this evaluation standard. This suitable substrate bias voltage range varies slightly depending on the temperature conditions of the substrate and the type of coating, but -30V to -200V is suitable for hard coatings, and especially C-50V to -200V. Suitable results are obtained at 150v.

In another example, a coating for decorative purposes was formed.

In decorative applications, deterioration of the surface quality due to the contamination of molten particles clouds the beautiful appearance, so this is the application in which the effects of the present invention are most demonstrated. It was found that the color tone can be controlled by bias voltage. As an example, while rotating the substrate to a position of 400 to 450 degrees from the evaporation surface using the above device, the coil excitation is 3000^T and the arc current is 60 degrees.
A, 0.5 pm Ti at Hz pressure 10 mTorr
The color tone when the N film was formed at various substrate bias voltages was
Shown in the table. As can be seen from this table, in the device of the present invention,
The color tone changed with a substrate voltage of -10V to -100V and was easily controllable. On the other hand, if the voltage exceeds -150V, cloudy appearance may occur due to the bombardment effect of the ion substrate, so from this example, it is clear that -10V to 150V is required to form a decorative film according to the present invention.
It is known that preferable results can be obtained if control is performed in accordance with the desired color tone within the substrate bias voltage range of v.

Table 3 Table 4 (Effects of the Invention) As described above, according to the present invention, in vacuum arc evaporation, a film with minimal contamination of molten particles from the evaporation surface and with good performance can be produced at a high deposition rate. can be formed,
It has excellent functionality and productivity, and since the device is constructed along a linear axis, it can be made into a simple and economical device.

[Brief explanation of the drawing]

Fig. 1 is a diagram showing the formation of a magnetic field by an air-core coil for explaining the principle of the present invention, Fig. 32 is a diagram schematically showing the configuration of the vacuum arc evaporation apparatus of the present invention, and Fig. 3a is a diagram showing the formation of a magnetic field by an air-core coil according to the present invention. FIG. 3B is a partially enlarged vertical side view showing the main parts of an example of the vacuum arc evaporation apparatus of the present invention, and FIG. Fig. 5 is a scanning electron microscope (SEM) photograph of a film formed by the device of the present invention at 3000 AT excitation, and Fig. 6 is a film formed by a prior art example for comparison. 38M photograph of the coating, Figure 7 is a 38M photograph of the coating in the case of no excitation, Figure 8 is 100OA
38M photograph of the coating in case of T excitation, Figure 9 is 200OA
A 38M photograph of the film in the case of T excitation, Figure 1O is a chart showing the relationship between the excitation intensity on the horizontal axis and the film formation rate on the vertical axis in the example, and Figure 11 is a vertical cross-sectional side view of the device of conventional technology example 12 are longitudinal sectional side views of the device of prior art example (2). (1) (la) (lb)...Air core coil, (2)
... Vacuum chamber, (3) ... Tubular part, (4)
・・Vacuum arc evaporation source, (5) ・・Evaporation surface, (6)・
...Substrate, (7)...Magnetic field lines, (8)...Arc confinement ring, (9)...Arc power supply, 0(1)...
Insulator, (II)...Cathode holder, 02)...
Arc ignition mechanism, (×)...center axis, (A)...
Magnetic field divergence position, (B)...Position inside the coil, (C)...
・Opposite magnetic field divergence position, (a)...Vacuum arc evaporation source, ω)...Substrate, (C)...Solenoid, (d)...
... Pipeline, (e) ... Cathode evaporation surface, (f) ... Tubular anode, ((2) ... Solenoid. Figure 9, Figure 10 βl Yu, @, I (AT)

Claims (3)

[Claims] (1) As a device for the vacuum arc evaporation method, which forms a film by guiding the plasma of the film-forming material generated from the arc evaporation source to the substrate under vacuum, the substrate is placed in front of the central axis of the evaporation surface of the cake evaporation source. disposing at least one coaxial air-core coil at a position between the two, and disposing the evaporation surface at a distance at which a magnetic field leaking from the end of the coil due to excitation of the coil diverges radially outward from the central axis; In this way, the arc spot generated on the evaporation surface is caused to orbit at high speed by the radial component of the magnetic field that diverges outward.
A vacuum arc evaporation apparatus characterized in that the plasma generated by the arc spot is passed through a vacuum space within the coil along the lines of magnetic force of the magnetic field and guided to the substrate to coat the substrate. (2) The vacuum arc according to claim 1, wherein the radial component of the diverging magnetic field on the evaporation surface is about 10 Gauss or more, and the inducing magnetic field on the evaporation surface is 20 Gauss or more. Vapor deposition equipment. (3) The vacuum arc evaporation apparatus according to claim 2, wherein the guiding magnetic field on the evaporation surface is about 60 Gauss.