JP2851320B2 - Vacuum arc deposition apparatus and method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial application field) The present invention is used for coating formation in the fields of wear-resistant coated electronic components such as vacuum tools, bearings, gears, printed circuits, optics, and magnetic devices. The present invention relates to a vacuum arc evaporation apparatus and an evaporation method.

(Prior Art) The vacuum arc evaporation method basically generates film material particles by arc discharge from an evaporation source (cathode) in a vacuum chamber and deposits them on a substrate to which a negative bias voltage is applied. In this method, a high-arc current emits high-energy cathode material atoms as a plasma beam from an arc spot generated on the evaporation surface of the cathode, which is the evaporation source, and accelerates by the voltage applied between the cathode and the substrate. And a film is formed on the substrate. One of the features of this vacuum arc vapor deposition method is that since the energy of the incident particles is high, the density of the film is high, and a film having excellent strength and durability can be obtained. The reason is that the film forming rate (film forming speed) is high and the productivity is high.

The advanced technology of the vacuum arc deposition method will be supplementarily described with representative examples.

Summary of the Prior Art (I), Japanese Patent Publication No. Sho 58-3033 Summarizes, "Arc discharge is generated between an evaporation source material and an arc electrode in a vacuum chamber, and a beam of particles comprising atoms and ions of the evaporation source material is generated. Injecting, at this time, supplying an arc discharge current of about 50 to 300 amperes at a low voltage of 100 volts or less to give each particle about 10 to 100 electron volts of kinetic energy, and deposit the particles on the surface of the substrate In order to enhance the directivity of the beam, the anode is formed in a truncated cone shape to determine the beam directing direction, and the aperture and the expansion angle are controlled. It is disclosed that the beam width is regulated by
It is described that the use of a magnetic field is effective for further improving the directivity.

Summary of the prior art (II), Japanese Patent Publication No. 52-14690 Summary: "Evaporation source metal cathode disposed on cooling floor, trigger electrode for generating discharge cathode point (arc spot) on evaporation surface of cathode, exhaust chamber, In a vacuum metallizing apparatus provided with an arc electrode, the anode is the envelope, the evaporation surface of the cathode faces the space inside the envelope, and the cathode point holding device controls the evaporation surface of the cathode, and the cathode point is the cathode. It is placed near the cathode so as to prevent the transition from the evaporating surface to the non-evaporating surface. "
The utilization rate of cathode material is improved.

Prior art example (III) In the conventional vacuum arc evaporation technique including the disclosure of the above two publications, in addition to plasma particles consisting of ions and neutrons generated from the cathode evaporation surface, molten particles of the cathode material, that is, plasma particles Larger macroverticles, macro droplets, etc. are generated, which are mixed into the deposited film on the substrate, causing deterioration of the film surface roughness, lowering of adhesion, and in the case of a reactive coating film, There is a problem that the molten particles are taken into the film without being reacted.

As a prior art for solving this problem, there is a magnetic field utilizing device shown in FIG. 11, that is, a vacuum in which a solenoid (c) is disposed by bending a vacuum arc evaporation source (a) and a substrate (b) at a right angle. The plasma generated from the source is bent under the action of the magnetic field of the solenoid (c) to bend in the pipeline (d) and guided to the substrate (b). In addition, the molten particles go straight without being affected by the magnetic field and cannot reach the substrate (b) in the position where they are optically shadowed. Thus, it is possible to form a high-quality film containing no molten particles. .

This apparatus is another example of a vacuum arc vapor deposition apparatus using a magnetic field, and as shown in FIG. 12, a cathode evaporation surface (e) is used. It has a feature in that a tubular anode f and a solenoid (g) are arranged in front of the tubular anode f, and the number of turns per unit length of the portion around the evaporation surface of the solenoid is at least twice that of the other portions. The magnetic field converges toward the cathode as shown by. It is said that the action based on the magnitude and shape of the magnetic field can realize efficient use of the evaporant due to the stability of the arc and the effect of the magnetic field guiding the plasma.

(Problems to be Solved by the Invention) In the vacuum evaporation apparatus of the prior art example (III), the problem that the molten particles are mixed in the coating film can be avoided, but as shown in the figure, the apparatus is large and the used space is small. It is not suitable for industrial-scale implementation because of its small size, difficult implementation control, and small effective coating area.

Although the prior art example (IV) seems to be more practical than (III), as described in column 8 of the publication, the neutral component of the evaporate reaches the substrate as in the prior art. Therefore, the problem that the molten particles are mixed in the coating remains unsolved as in the prior art examples (I) and (II).

(Means for Solving the Problems) The present invention solves the above-mentioned problems of the prior art vacuum arc evaporation apparatus and minimizes the problem of coating defects due to mixing of molten particles from the evaporation surface. It is an object of the present invention to provide an improved vacuum arc vapor deposition apparatus capable of satisfying the requirements as an industrial and economical apparatus and realizing the characteristics of the vacuum arc vapor deposition technique without hindrance.

As a solution corresponding to this object, the vacuum arc vapor deposition apparatus of the present invention, as described in claim 1, has at least one coil coaxial with the evaporation surface at a position between the arc evaporation source, and The magnetic field lines of the magnetic field formed by the excitation of the coil are arranged so as to converge at a spatial position inside the coil. The said evaporation source is arrange | positioned in the position which a magnetic field line diverges radially outward of an evaporation surface, as described in Claim 2.

Regarding the strength of the magnetic field, the radial component of the diverging magnetic field on the evaporation surface is about
The induction magnetic field at the evaporating surface is at least 20 Gauss, preferably at least about 60 Gauss.

It is desirable that an orifice having an opening slightly larger than the diameter of the plasma flow confined by the magnetic field is arranged in a portion inside the coil in the apparatus.

As a specific device configuration of the vacuum arc vapor deposition device of the present invention, as described in claim 6, a tubular portion is provided between the side of the vacuum chamber that stores the arc evaporation source and the side that stores the substrate, and at least one One coil is arranged at a position outside the tubular portion and such that the lines of magnetic force of a magnetic field formed by exciting the coil converge at a spatial position inside the coil. Thus, as described in claim 7, the arc spot generated on the evaporating surface is caused to circulate at a high speed on the evaporating surface by the diverging magnetic force lines, and the plasma passes through the space position inside the coil along the magnetic force lines. To the substrate to form a coating. The tubular portion is an orifice with an opening slightly larger than the diameter of the plasma flow constricted along the magnetic field, as defined in claim 8.

According to the vacuum vapor deposition method of the present invention, at least one coil is arranged coaxially with the evaporation surface between the arc evaporation source and the substrate, and a magnetic field formed by exciting the coil is provided. Converge the lines of magnetic force in the space inside the coil,
The arc evaporation source is located at a position where the magnetic field lines diverge outward in the radial direction of the evaporation surface, and the arc spot generated on the evaporation surface is caused to circulate at high speed on the evaporation surface by the diverged magnetic field lines, thereby turning the plasma into magnetic field lines. Along the inner space of the coil and guides the substrate to form a coating.

(Operation) The technical basis of the device of the present invention will be described below in accordance with the device configuration based on the operation principle.

In general, as shown in FIG. 1, when the coil (1) is excited, a magnetic field line (7) formed is moved to a position (B) in the coil.
In this case, the component in the direction of the central axis (X) almost disappears, but as the distance from the both ends of the coil (1), the lines of magnetic force (7) diverge radially outward from the axis (X), and the outside of the coil (1) becomes larger. Bypasses to the magnetic field lines on the opposite side of the coil (1).

In the present invention, the evaporation surface of the vacuum arc evaporation source is placed at the position (A) where the magnetic field diverges outward, and the evaporated plasma flow is guided along the line of magnetic force and passes through the position (B) inside the coil (B) to the opposite position ( A configuration is provided for coating the substrate that has arrived at C).

FIG. 2 schematically shows this configuration as a vacuum evaporation apparatus, which includes a coil (1) arranged at a position (B) outside a tubular portion (3) of a vacuum chamber (2) made of a non-magnetic material. In relation, the vacuum arc evaporation source (4) is arranged at the position (A) in the chamber (2) such that the center of the evaporation surface (5) coincides with the central axis (X), and the substrate is located at the position (C). (6) is arranged. (7) shows the lines of magnetic force. (8) is a plasma generation arc confinement ring.

Generally, when a magnetic field is applied to the plasma, the plasma tends to move in a direction along the line of magnetic force, and hardly moves in a direction perpendicular to the line of magnetic force. This is due to the so-called "Larmor swirling motion" in which charged particles move around a magnetic field line when moving in a space having a magnetic force. In order to guide the plasma by this effect, if the electrons in the plasma are guided by a magnetic field, the ions move to the part where the electron density of the negative charge is high due to the electrostatic effect, so the number of electrons that can be trapped It is preferable to apply a magnetic field of 10 gauss or more.

As a result, the plasma generated on the evaporation surface (5) of the cathode arc source (4) flows along the magnetic field lines (7) shown and reaches the substrate (6).

This effect has the effect of relatively reducing the amount of molten particles going to the substrate. In other words, this induction effect does not act on neutral molten particles, whereas ions are selectively guided to the substrate.

Next, in the present invention, in contrast to the conventional technique (IV) in which the arc evaporation source is placed at a position where the magnetic field converges, the position where the magnetic field lines of the magnetic field from the coil end diverge outward in the radial direction is opposite to the position where the magnetic field converges. Place the arc evaporation source on This outward magnetic field has a radial component, that is, a component parallel to the evaporation surface, is orthogonal to ions and electrons flowing out of the arc spot of the arc evaporation source, and forcibly moves the arc spot by electromagnetic mutual repulsion. Therefore, the arc spot orbits at a high speed on the evaporation surface. As a result, the time during which the arc spot stays at one location is shortened, the generation of molten parts around the arc spot is suppressed, the amount of molten particles generated from the evaporation surface is reduced, and the diameter of the molten particles is reduced. This causes the effect of

By coexistence of the above two actions, in the present invention, the movement of the arc spot is accelerated by a radially outward magnetic field component to generate a plasma with little mixed particles from the evaporation surface, and further selectively selectively only ions by the magnetic field. By inducing, a reduction in the incorporation of melt flow particles into the coating is achieved.

Further, in the present invention, there is an effect that a plasma flow can be obtained in a convergent state as an effect that can be advantageously used in practical use. That is, the plasma flow is guided along the magnetic force lines, once converged to a smaller diameter than the evaporation surface at the space position inside the coil, and then diverges again. At this time, if the substrate is arranged close to the coil, it is possible to coat with a plasma flow converged on a small area at a high density.

The substrate to be coated is not limited in its shape, size and coating location. Therefore, when the substrate is a drill, for example, the coating is important only on the cutting edge, so that the cutting edge can be arranged close to the coil to utilize the plasma focused flow action. Of course, when coating is required over a large area, the substrate may be placed at a considerable distance from the coil and the plasma flow diverged along the magnetic field may be used.

Regarding the focusing property of the plasma flow, the prior art (I) (I
In I), the evaporated ions are necessarily spread and diffused by the evaporation surface, and in the prior art example (IV), the plasma flow moves along the lines of magnetic force but spreads from the evaporation surface.

Further, another advantageous operation that can be simultaneously obtained in the present invention is that the arc spot orbits the evaporation surface at a high speed, so that the arc spot runs all over the evaporation surface, thereby uniformly consuming the evaporation material. There is an effect that can be made.

Regarding the prior arts (I) and (II), when no special control is applied, the arc spot stays only on a part of the evaporation surface, and a coil is arranged on the back surface of the evaporation material to correct the arc spot. There is known a method of forcibly moving an arc spot by forming a similar magnetic field. In the present invention, the evaporating material is uniformly consumed without providing such a special mechanism.

(Examples) Hereinafter, the present invention will be described more specifically with reference to the accompanying drawings according to examples.

FIGS. 3a and 3b show a vacuum arc evaporation apparatus 1 according to the present invention.
The main part of the example is shown. Since it is based on the schematic diagram of FIG. 2, the same reference numerals are written and indicated in the equivalent parts, and the description is used.

To supplement the explanation, the vacuum arc evaporation source (4) made of Ti is connected to the minus side of the arc power supply (9), and the arc confinement ring (8) made of BN is arranged around the source. Vacuum chamber (2) and insulator (10) connected to the side
Holder with water-cooling mechanism, insulated through the hole (11)
And the evaporating surface is arranged to face the front side of the vacuum chamber (2). (12) shows an arc ignition mechanism. The coil (1) arranged under the same central axis (X) on the outside of the chamber tubular part (3) between the substrate (6) which is not shown in the figure and not shown in the figure is unitary in this example. However, a plurality of coils may be arranged. On the evaporation surface, the generated plasma is guided to the substrate (6) in the chamber through the tubular portion (3) also serving as the anode inside the coil.

If the numerical value of this example is shown, the evaporation surface 5 of the evaporation source cathode is φ
100 mm, the center diameter of the coil 1 is φ184 mm, and the distance from the coil end to the cathode evaporation surface is 80 mm.

FIG. 4 shows the shape of the magnetic field when the coil was excited at 3000 AT, and the magnetic field strength at each part is shown in Table 1 in unit Gauss.

As can be seen from Table 1, the radial component of the magnetic field on the cathode evaporation surface (5) is not uniform. That is, on the central axis (X), the value is naturally zero due to the symmetry of the shape, and becomes larger toward the periphery. Here, the operation state will be described by regarding a position at a radius of 35 mm of 70% of the outer diameter of the evaporation surface (substantially equal in inner and outer areas) as a representative point.

From FIG. 4 and Table 1, it is known that the lines of magnetic force excited by the coil diverge as they move away from the central axis (X), and have a radial component on the cathode evaporation surface.

When vacuum arc discharge is generated by the arc ignition mechanism (12) while power is supplied from the arc power supply (9) in the above-described apparatus, the situation where the plasma flow from the evaporation surface (5) is guided along the magnetic field lines is visually observed. Can be observed. That is, the light emitting portion of the plasma flow generated from the evaporation surface converges to about 60% of the diameter of the evaporation surface inside the coil and along the magnetic field, and then diverges into the opposite side of the vacuum chamber. At this time, the arc spot on the evaporation surface (5) was moving circumferentially at high speed.

With this apparatus, a SUS304 stainless steel substrate (6) was placed at a position 350 mm from the evaporation surface (5), and the operating conditions were as follows: coil (1) excitation 3000AT, arc current 100A, substrate bias voltage -50V The reactive vacuum arc deposition of the TiN film was performed at a N ₂ gas pressure of 10 mTorr in the vacuum chamber (2). As shown in the scanning electron microscope (SEM) photograph of the film in FIG. Good coating with less mixing of molten particles could be performed. The SEM photograph of the coating of FIG. 6 is shown for comparison with the prior art example (I) (I
According to the conventional method corresponding to I), the substrate is placed at a position 200 mm from the evaporation surface where the same evaporation rate as above can be obtained, and the other shows a coating film coated under the same conditions. It is known that significantly better results are obtained.

Further, the coating according to the present invention and the coating of the comparative example were subjected to image processing based on the surface roughness (Ra value) and the SEM image to obtain a diameter.
Table 2 shows the results obtained by counting the density of the molten particles having a size of 0.6 μm or more.

From this, it is known from the quantitative data that a great improvement in surface roughness and a reduction in the number of molten particles by almost 1/10 can be realized by the present invention.

Prior art example that can prevent the mixing of molten particles into the coating (II
Compared with I), the device of the present invention has a simple structure, is compact, and is easy to implement industrially.

Next, to investigate the relationship between the amount of molten particles mixed into the coating and the magnetic field strength, the excitation of the coil was set to 0AT, 1000AT and 2000A.
When the coating was performed by changing the temperature to T, it was observed that the rotation of the arc spot on the evaporation surface was accelerated as the excitation was increased, and that the coating of FIGS. 7, 8 and 9 was respectively obtained. The result of SEM photograph was obtained.

In the case where the coil was not excited, as shown in the photograph of FIG. 7, the mixing of the molten particles was large, but in the case of the 2000 AT excitation, the mixing of the molten particles was small as shown in the photograph of FIG. The result is almost the same as the figure. In the case of excitation 1000AT, as shown in the photograph of FIG. 8, the mixing of the molten particles is smaller than that of the case of non-excitation in FIG. 7, but a considerable number remains.
Also, the particle size is large. Exciting 1000AT and 2000AT
It is known that the reduction of molten particles progresses between these conditions. 1000
The radial components on the evaporation surface at AT and 2000AT are about 7 gauss and 13 gauss, respectively. Therefore, when the radial component of the magnetic field exceeds about 10 gauss, it is determined that the reduction of the molten particles proceeds.

FIG. 10 shows the results of examining the effect of the excitation current on the film formation rate from the viewpoint of efficiently inducing plasma to the substrate in the present invention. From FIG. 10, it is known that the film formation rate increases as the excitation intensity increases, but tends to saturate at 3000 AT or more.

This development can be explained by the following physical development. In other words, by the application of a magnetic field, electrons are trapped in lines of magnetic force by Larmor motion, and are limited to movement parallel to the lines of magnetic force. However, in order to be able to use this phenomenon, the radius of the above Larmor motion is the size of the actual device, For example, it must be sufficiently smaller than the diameter of the evaporation surface. This Larmor radius is given by the formula, mV⊥ / eB (where m: electron mass, V⊥: electron velocity, e: elementary charge, B: magnetic field strength). That is, since the Larmor radius is inversely proportional to the magnetic field strength, if the magnetic field becomes stronger by excitation, the Larmor radius becomes smaller, and electrons are more strongly trapped in the magnetic field.

Here, as an example, assuming that the electrons immediately after being emitted from the arc spot have energy of about 20 eV corresponding to the discharge voltage, the magnetic field near the evaporation surface when excited at 3000 AT
When calculated at 60 Gauss, the Larmor radius is about 2.5 mm
It is. The diameter of this Larmor motion is about 1/20 compared to the diameter of the evaporation surface, and it can be said that electrons are sufficiently trapped in this magnetic field.

It is difficult to unambiguously determine how much magnetic field should be applied due to the relationship with other implementation conditions.
From FIG. 10, judging from the tendency that the film formation rate is saturated at 3000 AT and tends to sharply increase at 0 to 1000 AT, excitation of at least 1000 AT is necessary, and 3000 AT is judged to be suitable. In the present invention, the magnetic field is weakest due to divergence in the vicinity of the evaporation surface and the Larmor radius is maximized.Therefore, if the magnetic field strength at this position is indicated, in order to perform efficient magnetic field plasma induction, at least 20 gauss or more is required. Preferably, a magnetic field of 60 Gauss is determined to be necessary.

In the above embodiments, the evaporating surface and the coil have been described as being circular. However, the drawings may be regarded as having a cross-sectional shape, and the evaporating surface and the coil may be formed in other shapes, for example, rectangular. The present invention is not limited by the length and number of coils.

For example, it is also preferable to extend the tubular portion (3) of FIG. 3a in the axial direction and lengthen the coil (1) in the axial direction, or to arrange two or more coils, without impairing industrial utility. . This is essentially the same as in the embodiment of FIG. 3a, but the distance over which the plasma is guided is longer and the geometric effect can further reduce the amount of molten particles.

Also, by utilizing the effect that a converged plasma beam is obtained for the same reason as described above, the inside of the coil (1) has an opening slightly larger than the diameter of the plasma flow constricted along the magnetic field. It is also preferable to provide an orifice. This orifice is capable of passing ions guided to the magnetic field, but has a large blocking effect on neutral molten particles, which have no induction effect due to their geometry.

Further, as a preferred embodiment from the viewpoint of economy, there is a device in which at least a part of a coil forming a magnetic field is excited by an arc discharge current.

FIG. 3b schematically shows this embodiment. The illustrations with the same numbers as those in FIG. 3a are omitted. Here, the coil is divided into (1a) and (1b), and the coil (1a) is excited by an arc discharge current supplied from a power supply (9) which is narrow as shown. For example, if a coil with 30 turns is prepared and a vacuum arc discharge is generated with an arc current of 100 A, excitation of 3000 AT is possible, and the same action as the physical phenomenon described earlier with reference to FIG. Having. In addition, no special power supply is required for coil excitation, which contributes to simplification of the system and is economical.

Coil (1b) is not required, but coil (1a)
If only the discharge current and the magnetic field are controlled independently, inconvenience arises, and this can be compensated for. That is, a certain percentage of the magnetic field is excited by the discharge current, and the coil (1b)
By taking a method of obtaining a predetermined strength by compensating for this, the independence of the control can be maintained, but the exciting power supply of the coil (1b) can be significantly reduced in size and economy can be realized as compared with the previous embodiment. .

Since the gist of the present invention is to reduce the ratio of molten particles, rather than selecting a low melting point material such as Al, which originally generates a large amount of molten particles, as a material for evaporation, Ti, Zr, H
More preferable results can be obtained by selecting a relatively high melting point metal such as f, Nb, Ta, Cr, Mo, W or an alloy containing these as a main component as the material for evaporation. In other words, in the case of a melting point metal originally having a very large number of melting particles, even if the melting particles are reduced by the present invention, there is still a large amount of mixing, and while lacking practicality as a coating, the melting point metal of a high melting point metal is originally used. This is because the ratio of the acting ions increases, and the ratio of the vapor guided to the vicinity of the substrate in the total amount of evaporation increases.

Further, most of the above-mentioned refractory metals combine with each of N, C, and O to form a compound having a high function such as high hardness. Etc. in the presence of a reactive gas. It is well known to those skilled in the art that the reactive gas present during evaporation forms a thinner, higher melting point compound layer on the evaporation surface to control the generation of molten particles. From this, it can be said that the reactive coating performed while introducing the reactive gas using the high melting point metal as the evaporating material is the most preferable embodiment of the present invention.

In an experiment performed by the inventor on a combination of Ti, Zr and nitrogen gas, when the nitrogen gas was gradually increased, the nitrogen gas effect of the present invention caused the nitrogen partial pressure to reach 1 mTorr.
It was observed that the amount of molten particles that significantly mixed the coating was reduced.

Further, according to the method of the present invention, under suitable substrate bias voltage conditions, not only the reduction of the molten particles but also the coating itself having good properties can be achieved.

In other words, it was found that the high-melting-point metal compound film formed by the present invention in the course of the experiment of the present invention can easily realize the highest level of film performance conventionally obtained by controlling the substrate bias voltage.

For example, in the apparatus of the embodiment described above, the substrate is placed directly at a position 350 mm from the evaporation surface, and the coil excitation 3000 A
T, arc current 100A, N ₂ gas pressure 10 mTorr, substrate temperature 300
Table 3 shows the hardness of the 2.0-2.5 .mu.m TiN film formed at .about.350 DEG C. and the results of analysis by X-ray diffraction. As a result the as known, to TiN bulk hardness 1800~2100kg / mm ^2, the range of the substrate bias voltage -50V~-150V 2600~310
The highest level of TiN film formed by the extremely hard vacuum deposition method of 0 kg / mm ² has been obtained. Further, from the results of X-ray diffraction, a film having excellent abrasion resistance and oriented to the (111) plane, which is considered to be suitable for applications such as cutting tools, is obtained in the above-mentioned substrate bias voltage range. Further, Japanese Patent Application Laid-Open No. 63-502123 proposes (111) / I (200) as an index indicating the performance of abrasion resistance of TiN, and I (111) / I (20)
0)> 75 is good, but as can be seen from Table 3, the above bias voltage range is also judged to be good from this standard. The preferable substrate bias voltage range has a property that slightly varies depending on the temperature condition of the substrate and the type of the coating, but as a condition for the hard coating, -30 V to -200 V
Is suitable, and a suitable result is obtained particularly at −50 V to 150 V.

In another example, a film for decorative use was formed. In decorative applications, deterioration of surface cleaning due to mixing of molten particles gives a beautiful appearance cloudiness, so the effect of the present invention is most exhibited.However, in addition, when coating is performed with the apparatus of the present invention, substrate It turned out that the color tone can be controlled by the bias voltage. As an example, while rotating the substrate from the evaporation surface to the position of 400~450mm in the device, the coil excitation 3000AT, arc current 60A, with N ₂ pressure 10 mTorr 0.5
Table 4 shows the color tone when a μm TiN film was formed at various substrate bias voltages. As can be seen from this table, in the device of the present invention, the color tone changes at a substrate voltage of -10 V to -100 V,
It was easily controllable. On the other hand, if the voltage exceeds -150 V, the appearance may be cloudy due to the ion bombardment effect of the substrate. It is known that a preferable result can be obtained by performing the control in accordance with the color tone required within the substrate bias voltage range.

(Effects of the Invention) As described above, according to the present invention, it is possible to form a coating film having a minimum performance and a good performance surface at a high deposition rate in a vacuum arc vapor deposition with a minimum of mixing of molten particles from an evaporation surface. It is excellent in function and productivity, and can be an economical device with a simple structure because the device is configured along a linear axis.

[Brief description of the drawings]

FIG. 1 is a diagram showing the state of formation of a magnetic field by a coil for explaining the principle of the present invention, FIG. 2 is a diagram schematically showing the configuration of a vacuum arc evaporation apparatus of the present invention, and FIG. Partially enlarged longitudinal sectional side view showing a main part of an example of an arc evaporation apparatus, FIG.
FIG. 3b is a partially enlarged longitudinal side view showing a main part of another example of the vacuum arc vapor deposition apparatus of the present invention, FIG. 4 is a view showing a magnetic field distribution shape when a coil is excited in the present invention, and FIG. Scanning electron microscope (SEM) photograph of the coating formed by 3000AT excitation by the apparatus, FIG. 6 shows an SEM photograph of the coating formed by the prior art example for comparison, and FIG. 7 shows an SEM photograph of the coating in the case of no excitation. FIG. 8 is an SEM photograph of the coating in the case of 1000 AT excitation, FIG. 9 is a SEM photograph of the coating in the case of 2000 AT excitation, FIG.
The figure is a table showing the relationship between the excitation intensity of the horizontal axis and the film forming rate of the vertical width in the embodiment, FIG. 11 is a vertical side view of the apparatus of the prior art example III, FIG. It is a vertical side view. (1) (1a) (1b) ... coil, (2) ... vacuum chamber, (3) ... tubular part, (4) ... vacuum arc evaporation source, (5) ... evaporation surface, (6) ... board, (7) ... magnetic field lines, (8) ... arc confinement ring, (9) ... arc power supply, (10) ... insulator, (11) ... cathode holder, (12) ... Arc ignition mechanism, (X) ... central axis,
(A) ... magnetic field divergence position, (B) ... coil position,
(C): Opposite magnetic field divergence position, (a): Vacuum arc evaporation source, (b): Substrate, (c): Solenoid,
(D) ... conduit, (e) ... cathode evaporation surface, (f) ... tubular anode, (g) ... solenoid.

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁶ , DB name) C23C 14/00-14/58

Claims (9)

(57) [Claims] 1. A vacuum arc vapor deposition apparatus for forming a film by guiding a plasma of a film-forming material generated from an evaporation surface of an arc evaporation source to a substrate under vacuum to form at least one coil with the arc evaporation source and the arc evaporation source. Vacuum arc vapor deposition characterized by being arranged coaxially with the evaporation surface at a position between the substrate and the magnetic field lines of a magnetic field formed by exciting the coil so as to converge at a spatial position inside the coil. apparatus. 2. The vacuum arc evaporation apparatus according to claim 1, wherein the arc evaporation source is arranged at a position where magnetic lines of force diverge radially outward of the evaporation surface. 3. The magnetic field diverging on the evaporation surface has a radial component of about 10 gauss or more, and the guiding magnetic field on the evaporation surface is
3. The vacuum arc vapor deposition apparatus according to claim 1, wherein the vacuum arc vapor deposition rate is 20 gauss or more. 4. The vacuum arc vapor deposition apparatus according to claim 3, wherein the induction magnetic field on the evaporation surface is about 60 gauss. 5. The vacuum arc according to claim 1, wherein an orifice having an opening slightly larger than the diameter of the plasma flow confined along the magnetic field is arranged in a portion inside the coil. Evaporation equipment. 6. A vacuum arc evaporation apparatus for forming a film by guiding a plasma of a film forming material generated from an evaporation surface of an arc evaporation source in a vacuum chamber to a substrate, wherein the arc evaporation source of the vacuum chamber is housed. A tubular portion is provided between the side where the substrate is accommodated and the side where the substrate is housed, and at least one coil is provided at a position outside the tubular portion, and a magnetic field line of a magnetic field formed by exciting the coil is provided inside the coil. A vacuum evaporation apparatus, wherein the vacuum evaporation apparatus is arranged to converge at a spatial position. 7. The arc evaporation source is disposed at a position where magnetic lines of force diverge outward in the radial direction of the evaporation surface, and an arc spot generated on the evaporation surface is moved at a high speed on the evaporation surface by the diverged lines of magnetic force. 7. The vacuum arc vapor deposition apparatus according to claim 6, wherein the plasma is circulated and the plasma is passed along a line of magnetic force through a spatial position inside the coil and guided to the substrate to form a coating. 8. The vacuum deposition apparatus according to claim 6, wherein the tubular portion is an orifice having an opening slightly larger than the diameter of the plasma flow constricted along the magnetic field. 9. A vacuum arc vapor deposition method for forming a film by guiding a plasma of a film forming material generated from an arc evaporation surface to a substrate under vacuum, wherein at least one coil is provided between the arc evaporation source and the substrate. At a position coaxial with the evaporation surface, the magnetic field lines of the magnetic field formed by the excitation of the coil are converged at a spatial position inside the coil, and the magnetic field lines move the arc evaporation source out of the radial direction of the evaporation surface. Arranged at a position diverging in the direction, the arc spot generated on the arc evaporation surface is circulated at high speed on the evaporation surface by the diverged magnetic force lines, and the spatial position inside the coil along the plasma magnetic force lines is changed. A vacuum arc vapor deposition method, wherein the film is passed through the substrate to form a film.