JP2895339B2 - Arc plasma plating equipment - Google Patents
Arc plasma plating equipmentInfo
- Publication number
- JP2895339B2 JP2895339B2 JP5073967A JP7396793A JP2895339B2 JP 2895339 B2 JP2895339 B2 JP 2895339B2 JP 5073967 A JP5073967 A JP 5073967A JP 7396793 A JP7396793 A JP 7396793A JP 2895339 B2 JP2895339 B2 JP 2895339B2
- Authority
- JP
- Japan
- Prior art keywords
- arc
- magnetic field
- cathode
- current
- arc plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Physical Vapour Deposition (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、アークプラズマを利用
して、材料の表面に薄膜を形成するアークプラズマプレ
ーティング装置の改良に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in an arc plasma plating apparatus for forming a thin film on the surface of a material by using arc plasma.
【０００２】[0002]
【従来の技術】アークプラズマプレーティングを行なう
場合、陰極から発生させるアークプラズマは、可能な限
り均一で、粒子が細かく、かつ、陽極に向かって均一に
拡散するものであることが望ましい。このようなビーム
を得るためには、陰極の面が完全な平面であり、角隅部
も丸みのないシャープなエッジとなっていることが必要
である。2. Description of the Related Art When performing arc plasma plating, it is desirable that the arc plasma generated from the cathode be as uniform as possible, fine in particles, and uniformly diffused toward the anode. In order to obtain such a beam, it is necessary that the surface of the cathode is a perfect plane and that the corners have sharp edges without roundness.
【０００３】然しながら、通常は、角隅部から強いプラ
ズマが発生するため、角隅部が先に消耗し、そのためエ
ッジが丸くなるものである。そうすると、その丸くなっ
た角隅部から発生するプラズマの粒子が粗くなり、その
飛翔角度も不適切となり、プレーティングの効率が低下
すると共に、得られる薄膜の品位が低下するという問題
があった。そのため、陰極面を頻繁に修正加工する必要
があり、効率の低下をまぬがれなかった。[0003] However, usually, since strong plasma is generated from the corners, the corners are consumed first and the edges are rounded. Then, the plasma particles generated from the rounded corner become coarse, the flight angle becomes inappropriate, and the plating efficiency is reduced, and the quality of the obtained thin film is reduced. Therefore, it was necessary to frequently modify the cathode surface, and the reduction in efficiency was not avoided.
【０００４】アークプラズマプレーティングを行なうと
き、アーク陰極の角隅部が先に消耗するのを防止するた
め、アーク陰極の近傍に永久磁石を設け、その磁界をア
ーク陰極に作用させ、不均一な消耗を防止する技術は公
知である。磁界をかけると、角隅部からの蒸散が抑制さ
れ、得られる薄膜の品位が向上することが知られてい
る。When performing arc plasma plating, a permanent magnet is provided near the arc cathode to prevent the corners of the arc cathode from being worn out first, and the magnetic field is applied to the arc cathode to make the arc cathode non-uniform. Techniques for preventing wear are known. It is known that when a magnetic field is applied, evaporation from corners is suppressed, and the quality of the obtained thin film is improved.
【０００５】然しながら、従来公知の装置では、磁界が
一定であるので、アーク電流が大きいときは磁界が不足
する反面、アーク電流が小さいときは磁界が過大とな
り、結局電極の不均一な消耗を充分効果的に防止でき
ず、薄膜の品質低下が不可避である。However, in the known device, the magnetic field is constant, so that when the arc current is large, the magnetic field is insufficient. On the other hand, when the arc current is small, the magnetic field becomes excessive. It cannot be effectively prevented, and quality degradation of the thin film is inevitable.
【０００６】[0006]
【発明が解決しようとする課題】本発明は、上記の問題
点を解決するためなされたものであり、その目的とする
ところは、アーク陰極の不均一な消耗を防止し、高品位
の薄膜形成が可能なアークプラズマプレーティング装置
を提供することにある。SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to prevent the non-uniform consumption of an arc cathode and to form a high-quality thin film. To provide an arc plasma plating apparatus that can perform the above.
【０００７】[0007]
【課題を解決するための手段】上記の目的は、アーク陰
極の近傍に磁界を作用させる磁界発生装置と、上記磁界
がアーク電流の単調増加関数として変化するよう制御す
る回路とを設けたことを特徴とするアークプラズマプレ
ーティング装置によって達成できる。It is an object of the present invention to provide a magnetic field generator for applying a magnetic field near an arc cathode and a circuit for controlling the magnetic field to change as a monotonically increasing function of the arc current. This can be achieved by a characteristic arc plasma plating apparatus.
【０００８】[0008]
【作用】上記の如き構成であると、アーク陰極上におけ
るアーク点の移動速度がアーク電流に応じて増減するの
で、アーク点がアーク陰極上の特定領域に集中すること
がなく、アーク陰極の不均一な消耗が防止され、高品位
の薄膜を効率よく形成することが可能となるものであ
る。With the above arrangement, the moving speed of the arc point on the arc cathode increases or decreases in accordance with the arc current, so that the arc point does not concentrate on a specific area on the arc cathode, and the arc cathode does not move. Uniform wear is prevented, and a high-quality thin film can be efficiently formed.
【０００９】[0009]
【実施例】以下、図面を参照しつゝ本発明を具体的に説
明する。図１は、本発明に係るアークプラズマプレーテ
ィング装置の一実施例を示す説明図であり、図中、１は
処理室、２は被処理体、３はアーク陰極、４は陰極ホル
ダー、５はシールド電極、６は挿入抵抗、７及び８は絶
縁性のシーリング部材、９は磁界発生用コイル、１０は
アークプラズマ発生用の直流電源、１１は励磁電流制御
用抵抗、１２はバイアス電源、１３はプレーティング電
流調整用抵抗である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the drawings. FIG. 1 is an explanatory view showing an embodiment of an arc plasma plating apparatus according to the present invention, in which 1 is a processing chamber, 2 is an object to be processed, 3 is an arc cathode, 4 is a cathode holder, and 5 is a cathode holder. A shield electrode, 6 is an insertion resistor, 7 and 8 are insulating sealing members, 9 is a magnetic field generating coil, 10 is a DC power supply for generating arc plasma, 11 is an exciting current control resistor, 12 is a bias power supply, and 13 is a bias power supply. This is a plating current adjusting resistor.
【００１０】処理室１内には、減圧下で窒素その他の反
応ガスを供給し、被処理体２とアーク陰極３を適宜の間
隔を保って対向させ、かつ、処理室１の壁とアーク陰極
３の間に直流電源１０から高電圧を印加してアークプラ
ズマを発生させる。アーク電流は、処理室１の壁からア
ーク陰極３に流れ、次いで陰極ホルダー４を通り、更
に、互いに並列に接続されている磁界発生用コイル９及
び励磁電流制御用抵抗１１から成る回路を通って流れ
る。一方、処理室１の壁と被処理体２の間には、バイア
ス電源１２によりプレーティイグ電流調整用抵抗１３を
介して電圧が印加され、これによりアークプラズマの一
部が被処理体２の表面に収集、付着せしめられ、アーク
プラズマプレーティングが行われるものである。尚、抵
抗１３はプレーティング電流調整用の抵抗であり、抵抗
１１は励磁電流制御用の抵抗である。In the processing chamber 1, a nitrogen or other reactive gas is supplied under reduced pressure, the workpiece 2 and the arc cathode 3 are opposed to each other at an appropriate interval, and the wall of the processing chamber 1 is During the period 3, a high voltage is applied from the DC power supply 10 to generate arc plasma. The arc current flows from the wall of the processing chamber 1 to the arc cathode 3, then passes through the cathode holder 4, and further passes through a circuit composed of a magnetic field generating coil 9 and an exciting current controlling resistor 11 connected in parallel with each other. Flows. On the other hand, a voltage is applied between the wall of the processing chamber 1 and the processing target 2 via the plating current adjusting resistor 13 by the bias power supply 12, whereby a part of the arc plasma is applied to the surface of the processing target 2. They are collected, adhered, and subjected to arc plasma plating. The resistor 13 is a resistor for adjusting the plating current, and the resistor 11 is a resistor for controlling the exciting current.
【００１１】従って、励磁電流制御用抵抗１１及びプレ
ーティング電流調整用抵抗１３を適切に設定しておけ
ば、常時アーク電流に比例した適切な励磁電流が磁界発
生用コイル９に流れるようになる。このようにすると、
常にアーク電流に比例した適切な磁界をアーク陰極３に
かけることができるようになり、アーク電流が大きいと
きに磁界が不足したり、アーク電流が小さいときは磁界
が過大となるという問題が解消され、アーク点がアーク
陰極３上の特定領域に集中することもなくなり、アーク
陰極の不均一な消耗が防止され、高品位の薄膜形成が可
能となるものである。Therefore, if the exciting current controlling resistor 11 and the plating current adjusting resistor 13 are properly set, an appropriate exciting current always proportional to the arc current flows through the magnetic field generating coil 9. This way,
An appropriate magnetic field proportional to the arc current can always be applied to the arc cathode 3. This solves the problem that the magnetic field becomes insufficient when the arc current is large and the magnetic field becomes excessive when the arc current is small. In addition, the arc points are not concentrated on a specific area on the arc cathode 3, the uneven consumption of the arc cathode is prevented, and a high-quality thin film can be formed.
【００１２】こゝで具体的な実験例を示せば、アーク陰
極３として、直径６５ｍｍ、長さ３０ｍｍのＴｉ電極を
用い、シールド電極５との間隙を５ｍｍとし、処理室１
内に窒素ガスを３０ｍｌ／ｍｉｎで供給しつつ２×１０
-2ｔｏｒｒに減圧し、ステンレスの被処理体２とアーク
陰極３の間に６５Ｖの無負荷電圧を印加（バイアス４５
０ＶＤＣ、陰極ホルダー４の抵抗１３０Ω）してアーク
放電を発生させ、処理室内を２００℃に保ってプレーテ
ィング処理を行なった。処理期間中、磁界発生用コイル
９によるアーク陰極３の近傍の磁界は、アーク電流の変
化に応じて７０〜１００Ｇの範囲で変化した。３時間に
わたり多数の被処理体２にＴｉＮ薄膜を形成したが、処
理後においてもアーク陰極３の表面は平坦で、角隅部が
丸く不均一に消耗するということが極めて少なく、その
ため長時間にわたり修正加工を施すことなく使用を継続
できた。また、被処理体２の表面に形成されたＴｉＮ薄
膜も均一な厚さの高品位のものであった。Here, a specific experimental example will be described. As the arc cathode 3, a Ti electrode having a diameter of 65 mm and a length of 30 mm is used, the gap with the shield electrode 5 is set to 5 mm, and the processing chamber 1
While supplying nitrogen gas at 30 ml / min.
The pressure was reduced to -2 torr and a no-load voltage of 65 V was applied between the stainless steel workpiece 2 and the arc cathode 3 (bias 45
An arc discharge was generated by applying 0 VDC and the resistance of the cathode holder 4 of 130Ω), and the plating process was performed while maintaining the processing chamber at 200 ° C. During the processing period, the magnetic field in the vicinity of the arc cathode 3 by the magnetic field generating coil 9 changed in the range of 70 to 100 G according to the change of the arc current. The TiN thin film was formed on a large number of workpieces 2 over 3 hours. Even after the processing, the surface of the arc cathode 3 was flat, the corners were rounded, and there was very little uneven wear. Use could be continued without any modification. Further, the TiN thin film formed on the surface of the processing target 2 was also of high quality with a uniform thickness.
【００１３】[0013]
【発明の効果】本発明は、叙上の如く構成されるから、
本発明によるときは、アーク陰極の不均一な消耗が防止
できるので、長時間にわたり陰極に修正加工を施すこと
なく操業ができ、かつ、高品位の薄膜形成が可能なアー
クプラズマプレーティング装置を提供できるものであ
る。Since the present invention is configured as described above,
According to the present invention, an arc plasma plating apparatus capable of preventing non-uniform consumption of an arc cathode, capable of operating for a long time without performing a repair process on the cathode, and capable of forming a high-quality thin film is provided. You can do it.
【００１４】なお、本発明の構成は、上記の実施例のみ
に限定されるものではない。例えば、磁界発生用コイル
を処理室内でアーク陰極の至近距離内に設けたり、磁界
発生用コイルに永久磁石を併用したりすることも可能で
ある。又、上記には、アーク電流に比例した電流を磁界
発生用コイルに流し、アーク電流に比例して磁界を制御
するよう説明した。この方式は磁界の制御装置が単純で
ある上、効果も優れているので推奨されるが、一般的に
は、例えば、アーク電流をＩ、磁界をＢとして、 Ｂ＝ａ＋ｂＩ＋ｃＩ2 Ｂ＝ｄＩn （ａ，ｂ，ｃ，ｄ及びｎは定数） などの式で示される単調増加関数として磁界Ｂを変化さ
せてもそれぞれ一定の作用効果が認められるものである
から、本発明はこれらのすべてを包摂するものである。The configuration of the present invention is not limited to the above embodiment. For example, a magnetic field generating coil can be provided within a short distance of the arc cathode in the processing chamber, or a permanent magnet can be used in combination with the magnetic field generating coil. In the above description, a current proportional to the arc current is supplied to the magnetic field generating coil, and the magnetic field is controlled in proportion to the arc current. On this scheme field of the control device is simple, but recommended the effect is also excellent, in general, for example, the arc current I, the magnetic field as B, B = a + bI + cI 2 B = dI n ( a, b, c, d, and n are constants). Even when the magnetic field B is changed as a monotonically increasing function represented by the following equations, certain effects can be obtained. Therefore, the present invention includes all of them. Is what you do.
【図１】本発明に係るアークプラズマプレーティング装
置の一実施例を示す説明図である。FIG. 1 is an explanatory view showing one embodiment of an arc plasma plating apparatus according to the present invention.
１ 処理室 ２ 被処理体 ３ アーク陰極 ４ 陰極ホルダー ５ シールド電極 ６ 挿入抵抗 ７、８ シーリング部材 ９ 磁界発生用コイル １０ アークプラズマ発生用直流電源 １１ 励磁電流制御用抵抗 １２ バイアス電源 １３ プレーティング電流調整用抵抗 DESCRIPTION OF SYMBOLS 1 Processing room 2 Object 3 Arc cathode 4 Cathode holder 5 Shield electrode 6 Insertion resistance 7, 8 Sealing member 9 Magnetic field generation coil 10 Arc plasma generation DC power supply 11 Excitation current control resistance 12 Bias power supply 13 Plating current adjustment Resistance
Claims (2)
る磁界発生用コイル（９）を設け、その発生磁界をアー
ク電流の単調増加関数として変化させる回路を設けたこ
とを特徴とするアークプラズマプレーティング装置。An arc characterized in that a magnetic field generating coil (9) for generating a magnetic field is provided near an arc cathode (3), and a circuit for changing the generated magnetic field as a monotonically increasing function of an arc current is provided. Plasma plating equipment.
電流に比例するよう制御される請求項１に記載のアーク
プラズマプレーティング装置。2. The arc plasma plating apparatus according to claim 1, wherein the current of the magnetic field generating coil is controlled to be proportional to the arc current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5073967A JP2895339B2 (en) | 1993-03-31 | 1993-03-31 | Arc plasma plating equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5073967A JP2895339B2 (en) | 1993-03-31 | 1993-03-31 | Arc plasma plating equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06287749A JPH06287749A (en) | 1994-10-11 |
| JP2895339B2 true JP2895339B2 (en) | 1999-05-24 |
Family
ID=13533363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5073967A Expired - Lifetime JP2895339B2 (en) | 1993-03-31 | 1993-03-31 | Arc plasma plating equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2895339B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4827235B2 (en) * | 2005-09-07 | 2011-11-30 | 株式会社リケン | Arc type evaporation source and method for manufacturing film-formed body |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2851320B2 (en) * | 1988-09-26 | 1999-01-27 | 株式会社神戸製鋼所 | Vacuum arc deposition apparatus and method |
| JPH04221064A (en) * | 1990-12-21 | 1992-08-11 | Nkk Corp | Vacuum arc generator and ion beam generator with this device utilized therefor |
-
1993
- 1993-03-31 JP JP5073967A patent/JP2895339B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06287749A (en) | 1994-10-11 |
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