JP3464998B2 - Ion plating apparatus and method for controlling thickness and composition distribution of deposited film by ion plating - Google Patents
Ion plating apparatus and method for controlling thickness and composition distribution of deposited film by ion platingInfo
- Publication number
- JP3464998B2 JP3464998B2 JP05262593A JP5262593A JP3464998B2 JP 3464998 B2 JP3464998 B2 JP 3464998B2 JP 05262593 A JP05262593 A JP 05262593A JP 5262593 A JP5262593 A JP 5262593A JP 3464998 B2 JP3464998 B2 JP 3464998B2
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- film
- forming material
- hearth
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は、耐磨耗性や耐蝕性、装
飾的価値、電磁気的特性、光学的特性を要求される金属
あるいは非金属の物体の表面に、例えばＴｉｎ、ＴｉＣ
Ｎ、Ａｌ2Ｏ3、ｃ−ＢＮ、Ｓｉ3Ｎ4、ＳｉＯ2等を形成
するイオンプレーティング装置及びイオンプレーティン
グによる蒸着膜の膜厚と組成分布を制御する方法に関す
る。BACKGROUND OF THE INVENTION The present invention relates to a surface of a metal or non-metal object which is required to have abrasion resistance, corrosion resistance, decorative value, electromagnetic characteristics and optical characteristics, such as Tin, TiC.
N, Al 2 O 3, c -BN, Si 3 N 4, an ion plating apparatus and an ion plating Tin forming a SiO 2 or the like
The present invention relates to a method for controlling the film thickness and composition distribution of a vapor deposition film by means of a magnet.
【０００２】[0002]
【従来の技術】従来、ホローカソード電子銃の電子ビー
ム発生装置を備えたイオンプレーティング装置として、
図１或いは図２に示すように、真空室ａ内に被処理物ｂ
と成膜材料ｃとの間にバイアス電源ｄによりバイアスを
かけ、両者の間に電離空間ｅを形成させると共に、その
電離空間ｅに対向させてホローカソード型電子銃ｆを設
け、該電子銃ｆの外周と成膜材料ｃを収めたハースｇの
周囲とに夫々集束コイルｈ，ｉを設けた構成のものが知
られている（特公昭５１−２０１７０号、特公昭５１−
１３４７１号公報参照）。図１、図２に於いて、ｊは反
応ガスを真空室ａ内へ導入する導入口を示し、電子銃ｆ
から供給される電子ビームｋをハースｇ内の成膜材料ｃ
に照射して該成膜材料ｃを蒸発させると共にその蒸発物
をイオン化又は活性化し、同時にイオン化又は活性化し
た反応ガスと共に電離空間ｅ中を輸送して被処理物ｂに
膜として付着させる。2. Description of the Related Art Conventionally, as an ion plating apparatus equipped with an electron beam generator for a hollow cathode electron gun,
As shown in FIG. 1 or 2, an object to be treated b is placed in a vacuum chamber a.
A bias power supply d applies a bias between the film forming material c and the film forming material c to form an ionization space e therebetween, and a hollow cathode electron gun f is provided so as to face the ionization space e. There is known a structure in which focusing coils h and i are provided around the outer circumference of the hearth and around the hearth g containing the film-forming material c (Japanese Patent Publication Nos. 51-20170 and 51-170, respectively).
(See Japanese Patent No. 13471). In FIGS. 1 and 2, j indicates an inlet for introducing the reaction gas into the vacuum chamber a, and an electron gun f
The electron beam k supplied from the film forming material c in the hearth g
To evaporate the film-forming material c and ionize or activate the vaporized material, and at the same time transport it in the ionization space e together with the ionized or activated reaction gas to adhere it to the object to be treated b as a film.
【０００３】このとき、電子ビームｋは、電子銃ｆ近傍
の集束コイルｈとハースｇの周囲の集束コイルｉにより
集束され、電子ビームｋが成膜材料ｃに照射されるよう
に軌道が決定される。また、蒸発しイオン化された成膜
材料ｃおよび反応ガスのイオンとプラズマは、集束コイ
ルｈ，ｉにより形成される磁場によって拘束され、電離
空間ｅを通って被処理物ｂへ輸送される。At this time, the electron beam k is focused by the focusing coil h near the electron gun f and the focusing coil i around the hearth g, and the trajectory is determined so that the electron beam k is irradiated on the film forming material c. It Further, the vaporized and ionized film forming material c, the ions of the reaction gas and the plasma are restrained by the magnetic field formed by the focusing coils h and i, and are transported to the object b to be processed through the ionization space e.
【０００４】こうしたイオンプレーティングの作動時に
於いて、集束コイルｈは、電子銃ｆの電子放出面から安
定した電子放出を行なわせることと、電子銃ｆから放出
された電子ビームｋを成膜材料ｃの直上にまで輸送する
役割を営み、また、集束コイルｉは、電子ビームｋを適
度に集束させ、ビームを効率よく成膜材料ｃに入射させ
ることと、電子銃ｆの集束コイルｈとの合成磁場により
電子ビームｋを成膜材料ｃに偏向させる役割を営む。こ
れらの役割は、成膜材料ｃを効率よく安定して蒸発させ
ることを主目的としている。集束コイルｈ，ｉによって
形成される磁場の磁束線を図３に示す。During operation of such ion plating, the focusing coil h causes stable electron emission from the electron emission surface of the electron gun f, and the electron beam k emitted from the electron gun f is used as a film forming material. In addition, the focusing coil i appropriately focuses the electron beam k so that the beam is efficiently incident on the film forming material c and the focusing coil h of the electron gun f is used. It plays the role of deflecting the electron beam k to the film forming material c by the synthetic magnetic field. These roles are mainly aimed at efficiently and stably evaporating the film forming material c. The magnetic flux lines of the magnetic field formed by the focusing coils h and i are shown in FIG.
【０００５】[0005]
【発明が解決しようとする課題】従来のイオンプレーテ
ィング装置では、集束コイルｈ，ｉは、上記のように成
膜材料ｃを効率よく安定して蒸発させることを主目的と
して設計されているため、電子ビームｋは成膜材料ｃの
一定位置に照射され、蒸発しイオン化した成膜材料ｃの
イオン、反応ガスのイオン及びそのプラズマは、集束コ
イルｈ，ｉによって形成された磁場によりハースｇの中
心軸のまわりに拘束されるものの、任意に上記イオン及
びプラズマの分布を制御できない欠点があった。そのた
め、被処理物ｂに付着する成膜材料ｃの効率を損なうこ
となく任意の膜厚分布の膜や化合物膜の場合には組成が
均一な膜を形成することが困難であった。In the conventional ion plating apparatus, the focusing coils h and i are designed mainly for efficiently and stably evaporating the film forming material c as described above. The electron beam k is irradiated to a certain position of the film forming material c, and the ions of the film forming material c that have been vaporized and ionized, the ions of the reaction gas, and the plasma thereof are absorbed by the magnetic field formed by the focusing coils h and i. Although constrained around the central axis, there was a drawback that the distribution of the above-mentioned ions and plasma could not be controlled arbitrarily. Therefore, it is difficult to form a film having a uniform composition in the case of a film having a desired film thickness distribution or a compound film without impairing the efficiency of the film forming material c attached to the object to be processed b.
【０００６】例えば、図４に示すように、電子ビームｋ
の集束性及び軌道に影響を及ぼすことなく集束コイル
ｈ，ｉによる磁場を大きくすると、Ａで示すように被処
理物ｂへの付着効率が４０％程度と大きくなるが、その
膜厚分布は±５０％程度の不均一さを生じ、一方、集束
コイルｈ，ｉによる磁場を小さくすると、Ｂで示すよう
に膜厚分布は±１５％程度に均一になるが、付着効率は
５％程度の小さなものになる。更に、化合物膜形成に必
要な十分高い密度のプラズマを均一に被処理物ｂの近傍
に形成できないため、例えばＴｉＮ膜をＦｅの被処理物
ｂに形成した場合、場所により、図５に示すように、Ｔ
ｉＮ膜のＸ線回折強度が被処理物ｂのＦｅに比べて非常
に小さい膜が形成される場合がある。For example, as shown in FIG.
When the magnetic field generated by the focusing coils h and i is increased without affecting the focusing property and the trajectory of the object b, the adhesion efficiency to the object b to be processed is increased to about 40% as shown by A, but the film thickness distribution is ±. When the magnetic field generated by the focusing coils h and i is reduced, the film thickness distribution becomes uniform to about ± 15% as shown by B, but the adhesion efficiency is as small as about 5%. It becomes a thing. Furthermore, since a plasma having a sufficiently high density necessary for forming a compound film cannot be uniformly formed in the vicinity of the object b to be processed, when a TiN film is formed on the object b to be processed Fe, for example, as shown in FIG. To T
In some cases, a film having an X-ray diffraction intensity of the iN film that is much smaller than that of Fe of the object to be processed b is formed.
【０００７】本発明は、上記の従来のイオンプレーティ
ング装置の欠点を解決するもので、電子ビームを成膜材
料の任意の位置に揺動して照射させると共に、蒸発しイ
オン化された蒸発物質のイオン、反応ガスイオン及びそ
のプラズマの分布を任意に制御することにより、被処理
物に付着する成膜材料の付着効率を損なうことなくしか
も任意の膜厚分布で膜を形成でき、化合物膜の場合には
組成が均一な膜を形成できるイオンプレーティング装置
を提供すること、及びイオンプレーティングにより形成
される蒸着膜の膜厚と組成分布を制御する方法を提案す
ることを目的とするものである。The present invention solves the above-mentioned drawbacks of the conventional ion plating apparatus, in which an electron beam is oscillated to irradiate an arbitrary position of a film forming material, and at the same time, a vaporized and ionized vaporized substance is removed. By arbitrarily controlling the distribution of ions, reactive gas ions and its plasma, it is possible to form a film with an arbitrary film thickness distribution without impairing the adhesion efficiency of the film forming material that adheres to the object to be processed. It is an object of the present invention to provide an ion plating apparatus capable of forming a film having a uniform composition, and to propose a method for controlling the film thickness and composition distribution of a vapor deposition film formed by ion plating. .
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
に請求項１に記載の発明は、真空室内に、蒸着膜が形成
される被処理物と、該真空室内の下方に設けられた成膜
材料を溶解させるハースと、ガス導入口とを設け、該被
処理物にはこれに直流バイアスをかける直流バイアス装
置が接続され、更に、該ハースに向けて電子ビームを供
給する電子ビーム発生装置を複数個設けて該各電子ビー
ム発生装置に夫々独立に電子ビームを発生させるための
電源を夫々接続し、該電子ビーム発生装置から供給され
る電子を効率よく成膜材料へ照射させると共に蒸発する
成膜材料と導入ガスをイオン化するための磁場を形成す
る集束コイルをハースの周囲と上方に備え、更に、該ハ
ースから蒸発する成膜材料のイオンと該ガス導入口から
導入したガスのイオン及びプラズマを揺動させる複数の
集束コイルを被処理物の背後に備えたイオンプレーティ
ング装置であって、前記各電源に、前記電子ビームの前
記成膜材料への照射位置を揺動させるための出力制御装
置を設け、該出力制御装置で前記各電源の出力を制御し
て前記電子ビームの前記成膜材料への照射位置を変化さ
せて揺動させながら、前記被処理物の背後に備えた前記
複数の集束コイルへの電流を制御して、前記ハースから
蒸発する前記成膜材料のイオンと前記導入ガスのイオン
及びプラズマを前記電子ビームと同期して揺動させなが
ら前記被処理物に向けて誘導し、前記被処理物の表面に
形成される反応蒸着膜の組成分布を制御することを特徴
としている。また、上記目的を達成するために請求項２
に記載の発明は、真空室内に、蒸着膜が形成される被処
理物と、該真空室内の下方に設けられた成膜材料を溶解
させるハースと、ガス導入口とを設け、該被処理物には
これに直流バイアスをかける直流バイアス装置が接続さ
れ、更に、該ハースに向けて電子ビームを供給する電子
ビーム発生装置を複数個設けて該各電子ビーム発生装置
に夫々独立に電子ビームを発生させるための電源を夫々
接続し、該電子ビーム発生装置から供給される電子を効
率よく成膜材料へ照射させると共に蒸発する成膜材料と
導入ガスをイオン化するための磁場を形成する集束コイ
ルをハースの周囲と上方に備え、更に、該ハースから蒸
発する成膜材料のイオンと該ガス導入口から導入したガ
スのイオン及びプラズマを揺動させる複数の集束コイル
を前記被処理物の背後 に備えたイオンプレーティング装
置に於いて、前記各電源の出力を制御して前記電子ビー
ムの前記成膜材料への照射位置を揺動させながら、前記
被処理物の背後に備えた前記複数の集束コイルへの電流
を制御して、前記ハースから蒸発する前記成膜材料のイ
オンと前記導入ガスのイオン及びプラズマを前記電子ビ
ームと同期して揺動させながら前記被処理物に向けて誘
導し、前記被処理物の表面に形成される反応蒸着膜の組
成分布を制御することを特徴とするイオンプレーティン
グによる蒸着膜の膜厚と組成分布を制御することを特徴
としている。 [Means for Solving the Problems] To achieve the above object
In the invention according to claim 1 , in the vacuum chamber, an object to be processed on which a vapor deposition film is formed, a hearth provided below the vacuum chamber for dissolving a film forming material, and a gas inlet are provided, A DC bias device for applying a DC bias to the object is connected to the object to be processed, and a plurality of electron beam generators for supplying an electron beam to the hearth are further provided to provide each of the electron beams.
To independently generate electron beams in each
Power sources are connected to each other , and a focusing coil that forms a magnetic field for ionizing the film forming material and the gas to be vaporized while efficiently irradiating the film forming material with electrons supplied from the electron beam generator is provided around the hearth. Prepare above, and
Ion of the film forming material that evaporates from the source and the gas inlet
Ion and plasma of the introduced gas
Ion platey with focusing coil behind the workpiece
A power supply device, each of the power sources is connected to the front of the electron beam.
An output control device for swinging the irradiation position on the film-forming material.
The output control device controls the output of each power source.
Change the irradiation position of the electron beam to the film forming material.
While swinging and swinging,
From the hearth by controlling the current to multiple focusing coils
Ions of the film forming material and ions of the introduced gas that evaporate
And swinging the plasma in synchronization with the electron beam
To the object to be treated, and to the surface of the object to be treated.
Characterized by controlling the composition distribution of the formed reactive vapor deposition film
I am trying. Further, in order to achieve the above object, claim 2
The invention described in (1) , the vacuum chamber is provided with an object to be processed on which a vapor-deposited film is formed, a hearth provided below the vacuum chamber to dissolve a film-forming material, and a gas introduction port. applying a DC bias current bias device connected thereto to further generate electron beams each independently a plurality provided the respective electron beam generating apparatus an electron beam generator for supplying an electron beam toward the hearth Turn the respective <br/> connection order to form a magnetic field for ionizing the film forming material and introducing gas evaporated with irradiates the electrons supplied from the electron beam generator efficiently to the film-forming material A plurality of focusing coils are provided around and above the hearth , and further, ions of the film forming material evaporated from the hearth, ions of the gas introduced from the gas inlet and plasma are oscillated.
The In ion plating apparatus having behind the object to be processed, while oscillating the irradiation position of the to the film-forming material of the electron beam by controlling the output of each power supply, the
Current to the plurality of focusing coils provided behind the workpiece
By controlling the induced toward the object to be processed while the ions and ions of the plasma and the introduction gas in the film-forming material that evaporates is swung in synchronization with the electron beam from the hearth, the object to be processed Ion plating characterized by controlling the composition distribution of the reaction-deposited film formed on the surface of silicon
Characterized by controlling the thickness and composition distribution of the deposited film by grayed
I am trying.
【０００９】[0009]
【作用】電子ビーム発生装置からの電子ビームが集束コ
イルにより誘導されてハース内の成膜材料を照射する
と、該成膜材料が蒸発してイオン化すると共に真空室内
に導入した不活性ガス或いは反応ガスのプラズマとイオ
ンが発生し、これらのイオンとプラズマはバイアスがか
けられた被処理物表面に蒸着膜或いは反応蒸着膜として
付着する。複数個の電子ビーム発生装置には夫々電子ビ
ーム発生用の電源が接続されており、各電源の出力を制
御することにより該電子ビームを揺動させると同時に該
被処理物の背後に設けた集束コイルへの電流を、前記各
電源の出力制御と同期させて制御することにより、成膜
材料のイオン、導入ガスのイオン及びそのプラズマの分
布を任意に制御する磁場を形成することが出来、被処理
物に付着する成膜材料の付着効率を損なわずに任意の膜
厚分布で成膜し、化合物膜の場合は組成が均一な膜を成
膜することが出来る。When the electron beam from the electron beam generator is guided by the focusing coil to irradiate the film forming material in the hearth, the film forming material is vaporized and ionized, and the inert gas or the reaction gas introduced into the vacuum chamber is also applied. Plasma and ions are generated, and these ions and plasma are deposited as a vapor deposition film or a reactive vapor deposition film on the surface of the object to be processed which is biased. Each of the plurality of electron beam generators is connected to a power source for generating an electron beam. By controlling the output of each power source, the electron beam is oscillated and at the same time a collector provided behind the object to be processed. the current to the flux coil, each
By controlling in synchronization with the output control of the power source, it is possible to form a magnetic field that arbitrarily controls the distribution of the ions of the film forming material, the ions of the introduced gas and its plasma, and the film forming material that adheres to the object to be processed It is possible to form a film with an arbitrary film thickness distribution without deteriorating the adhesion efficiency of the compound, and to form a film having a uniform composition in the case of a compound film.
【００１０】[0010]
【実施例】本発明の実施例を図面に基づき説明すると、
図６及び図７に於いて、符号１は真空室を示し、該真空
室１内の上方には蒸着膜が形成される被処理物２が適当
な手段で設けられ、該被処理物２の下方にはこれとの間
で直流バイアス装置３により直流バイアスがかけられた
ハース４が設けられる。更に、該真空室１内には、成膜
材料１０を収めたハース４に向けて電子を照射するホロ
ーカソード電子銃で構成された電子ビーム発生装置５
と、不活性ガス或いは反応ガスを導入するガス導入口６
とが設けられる。該電子ビーム発生装置５の近傍には集
束コイル７が設けられ、ハース４の周囲と上方には集束
コイル８、１３が設けられる。１１は真空ポンプに接続
される真空排気口、１２は電離空間である。Embodiments of the present invention will be described with reference to the drawings.
6 and 7, reference numeral 1 denotes a vacuum chamber, and an object to be processed 2 on which a vapor deposition film is formed is provided above the inside of the vacuum chamber 1 by an appropriate means. A hearth 4 to which a DC bias is applied by a DC bias device 3 is provided below the hearth 4. Further, in the vacuum chamber 1, an electron beam generator 5 composed of a hollow cathode electron gun for irradiating the hearth 4 containing the film forming material 10 with electrons.
And a gas inlet 6 for introducing an inert gas or a reaction gas
And are provided. A focusing coil 7 is provided near the electron beam generator 5, and focusing coils 8 and 13 are provided around and above the hearth 4. Reference numeral 11 is a vacuum exhaust port connected to a vacuum pump, and 12 is an ionization space.
【００１１】こうした構成は従来のものと略同様で、電
子ビーム発生装置５からの電子ビーム９は集束コイル７
によりハース４の直上へと誘導され、ハース４の周囲の
集束コイル８により集束されてハース４内の成膜材料１
０を蒸発させ、その蒸発材料は該ハース４の上方に発生
するガス導入口６からのガスによるプラズマによりイオ
ン化され、該ガスが反応ガスの場合には該蒸発材料が反
応して被処理物２に膜状に付着するが、本発明に於いて
は、該電子ビーム９を成膜材料１０の任意の位置に揺動
して照射させるために、該電子ビーム発生装置５を複数
個設け、各発生装置５に夫々独立に電子ビーム９を発生
させるための電源１４を接続し、該ハース４から発生す
る成膜材料１０のイオンと導入ガスのイオン及びプラズ
マを電子ビーム９と同期して揺動させながら被処理物２
に向けて誘導することにより該被処理物２の表面での蒸
着膜の膜厚分布を制御する第２集束コイル１５を設け
た。１６は該電源１４の出力制御装置である。Such a structure is substantially the same as the conventional one, and the electron beam 9 from the electron beam generator 5 is focused on the focusing coil 7.
Is guided by the focusing coil 8 around the hearth 4 by the focusing coil 8 around the hearth 4 to form the film forming material 1 in the hearth 4.
0 is vaporized, and the vaporized material is ionized by the plasma generated by the gas from the gas inlet 6 generated above the hearth 4, and when the gas is a reactive gas, the vaporized material reacts and the object to be treated 2 In the present invention, a plurality of electron beam generators 5 are provided to swing and irradiate the electron beam 9 at an arbitrary position of the film forming material 10. A power source 14 for independently generating an electron beam 9 is connected to each of the generators 5, and ions of the film forming material 10, ions of an introduced gas and plasma generated from the hearth 4 are oscillated in synchronization with the electron beam 9. Object to be processed 2
A second focusing coil 15 is provided for controlling the film thickness distribution of the vapor deposition film on the surface of the object 2 to be processed by guiding the second focusing coil 15. Reference numeral 16 is an output control device of the power supply 14.
【００１２】該電子ビーム発生装置５は環状の集束コイ
ル７と同心に４個配置され、電子ビーム９により成膜材
料１０を蒸発させる時に集束コイル７、８、１３を夫々
調整して図８に示すような磁場を形成することができ
る。イオンは磁場の強さに反比例した回転半径（ラーマ
ー半径）で回転しながら磁束線に沿って運動することが
知られているが、電子ビーム発生装置５からの電子ビー
ム９は、集束コイル７、８、１３により形成される磁場
により拘束される。従って、図６、図７に示すように、
電子ビーム発生用電源１４ａにより電子ビーム発生装置
５ａから放射される電子ビームは９ａの軌道をもって成
膜材料１０へ照射される。他の電子ビーム発生装置５
ｂ、５ｃ、５ｄから放射される電子ビームも同様に各々
９ｂ、９ｃ、９ｄの軌道をもって成膜材料１０へ照射さ
れる。例えば、各電子ビーム発生用電源１４の出力を制
御して各電子ビーム発生装置５から放射する電子ビーム
電流を図９に示すように変化させると、最大電流の電子
ビームを発生する電子ビーム発生装置５は、時間ｔ＝ｔ
1、ｔ2、ｔ3、ｔ4の夫々の瞬間に５ａ、５ｂ、５ｃ、５
ｄと連続的に変化し、電子ビームの軌道もそれに対応し
て９ａ、９ｂ、９ｃ、９ｄと変化する。Four electron beam generators 5 are arranged concentrically with the annular focusing coil 7, and when the electron beam 9 evaporates the film-forming material 10, the focusing coils 7, 8 and 13 are adjusted respectively, as shown in FIG. A magnetic field as shown can be created. It is known that the ions move along the magnetic flux lines while rotating with a radius of gyration (Larmor radius) that is inversely proportional to the strength of the magnetic field, but the electron beam 9 from the electron beam generator 5 is It is constrained by the magnetic field formed by 8 and 13. Therefore, as shown in FIG. 6 and FIG.
The electron beam emitted from the electron beam generator 5a by the electron beam generating power supply 14a is applied to the film forming material 10 along the trajectory of 9a. Other electron beam generator 5
Similarly, the electron beams emitted from b, 5c, and 5d are also applied to the film forming material 10 with orbits of 9b, 9c, and 9d, respectively. For example, when the output of each electron beam generating power supply 14 is controlled to change the electron beam current emitted from each electron beam generating device 5 as shown in FIG. 9, an electron beam generating device that generates an electron beam of the maximum current is generated. 5 is time t = t
5a, 5b, 5c, 5 at each moment of 1 , t 2 , t 3 , t 4.
and the orbit of the electron beam correspondingly changes to 9a, 9b, 9c and 9d.
【００１３】その結果、電子ビーム９は成膜材料１０の
上を任意の速度で揺動する。このとき、成膜材料１０に
於いて電子ビーム９が照射されている位置からは電子ビ
ーム９のエネルギーに対応した量の成膜材料１０が蒸発
し、イオン化される。更に、第２集束コイル１５は図
６、図７の例では４個設けるようにし、図１０のよう
に、各第２集束コイル１５ａ、１５ｂ、１５ｃ、１５ｄ
の電流を制御してその各磁場を夫々電子ビーム軌道９
ａ、９ｂ、９ｃ、９ｄに同期して変化させると、ハース
４から蒸発したイオン化された成膜材料１０のイオン、
導入ガスイオン、及びこれらのプラズマは、集束コイル
１３及び第２集束コイル１５により形成される磁場によ
り拘束される。例えば、図１０に於ける時間ｔ1の瞬間
に於いては、成膜材料１０のイオン等は図８、図９のよ
うに被処理物２の第２集束コイル１５ａの真下に向かっ
て誘導され、同様にｔ＝ｔ2、ｔ3、ｔ4の各瞬間に於い
ては、図９に１例を示したように夫々第２集束コイル１
５ｂの真下、或いは第２集束コイル１５ｃ、１５ｄの真
下に向かって誘導される。As a result, the electron beam 9 oscillates on the film forming material 10 at an arbitrary speed. At this time, an amount of the film forming material 10 corresponding to the energy of the electron beam 9 is evaporated and ionized from the position where the film forming material 10 is irradiated with the electron beam 9. Further, in the example of FIGS. 6 and 7, four second focusing coils 15 are provided, and as shown in FIG. 10, each second focusing coil 15a, 15b, 15c, 15d.
Current of each electron beam orbit 9
a, 9b, 9c, and 9d are changed in synchronization with the ions of the ionized film forming material 10 evaporated from the hearth 4,
The introduced gas ions and these plasmas are restricted by the magnetic field formed by the focusing coil 13 and the second focusing coil 15. For example, at the instant of time t 1 in FIG. 10, the ions and the like of the film forming material 10 are guided toward directly below the second focusing coil 15a of the object 2 as shown in FIGS. Similarly, at each instant of t = t 2 , t 3 , and t 4 , as shown in FIG.
The magnetic field is guided directly below 5b or directly below the second focusing coils 15c and 15d.
【００１４】従って、例えば被処理物２が大面積のもの
であっても、電子ビーム発生用電源１４及び第２集束コ
イル１５の電流波形を適当に選ぶことにより、被処理物
２に付着する成膜材料１０の付着効率を損なうことなく
厚さが均一な膜を形成することができ、反応ガスを導入
して化合物膜を形成するときには膜厚のみでなく組成も
均一な膜を形成することができる。Therefore, for example, even if the object 2 to be processed has a large area, it can be adhered to the object 2 to be processed by appropriately selecting the current waveforms of the electron beam generating power source 14 and the second focusing coil 15. A film having a uniform thickness can be formed without impairing the adhesion efficiency of the film material 10. When a reaction gas is introduced to form a compound film, not only the film thickness but also the composition can be formed. it can.
【００１５】本発明に基づくイオンプレーティング装置
により成膜材料１０としてＴｉを用意し、ガス導入口６
からＮ2ガスを導入してＦｅの被処理物２に形成したＴ
ｉＮ膜の膜厚分布とＸ線回折強度を夫々図１１、図１２
に示した。これにより明らかなように、膜厚分布は±５
％程度、付着効率は約５０％で、Ｘ線回折強度の大きい
ものが得られる。Ti is prepared as the film forming material 10 by the ion plating apparatus according to the present invention, and the gas introduction port 6 is used.
From which N 2 gas was introduced to form an object to be treated 2 of Fe
The film thickness distribution and the X-ray diffraction intensity of the iN film are shown in FIGS. 11 and 12, respectively.
It was shown to. As is clear from this, the film thickness distribution is ± 5
%, The adhesion efficiency is about 50%, and a high X-ray diffraction intensity is obtained.
【００１６】尚、被処理物２の被付着面が比較的小さい
場合や、膜を被処理物２の一部分に局所的に形成したい
場合には、必要な電子ビーム発生装置と第２集束コイル
を適当に選んで運転することにより、成膜材料のイオン
や導入ガスのイオン、及びそれらのプラズマを必要な方
向に誘導することも可能である。If the surface of the object to be processed 2 to be adhered is relatively small or if a film is to be locally formed on a part of the object to be processed 2, the necessary electron beam generator and second focusing coil are installed. It is also possible to induce the ions of the film-forming material, the ions of the introduced gas, and their plasmas in the required directions by appropriately selecting and operating them.
【００１７】[0017]
【発明の効果】以上のように本発明によれば、複数個の
電子ビーム発生装置に夫々接続した各電源の出力を制御
して電子ビームの成膜材料への照射位置を揺動させなが
ら、被処理物の背後に備えた複数の集束コイルへの電流
を調整して、ハースから蒸発する成膜材料のイオンと導
入ガスのイオン及びプラズマを電子ビームと同期して揺
動させながら被処理物に向けて誘導することにより、被
処理物の表面に形成される反応蒸着膜の組成分布を制御
することができるので、電子ビームを成膜材料の任意の
位置に照射できると同時に被処理物の被着面に任意の磁
場を形成することができ、任意の膜厚分布で付着効率良
く成膜を行なえ、化合物膜の場合には組成が均一な膜を
形成できる。 As described above , according to the present invention , a plurality of
Controls the output of each power supply connected to the electron beam generator
Do not swing the irradiation position of the electron beam to the film forming material.
Current to multiple focusing coils behind the workpiece.
To control the ions and ions of the deposition material that evaporate from the hearth.
The incoming gas ions and plasma are oscillated in synchronization with the electron beam.
By guiding the object toward the workpiece while moving it,
Control the composition distribution of the reaction vapor deposition film formed on the surface of the processed material
As it can be, the electron beam can be formed of any magnetic field to the deposition surface of the same time the article to be treated to be able irradiated at an arbitrary position of the film forming material, attached efficiently formed in any film thickness distribution performed film, Ru can be formed uniform film composition in the case of the compound film.
【図１】 従来のイオンプレーティング装置の截断側面
図FIG. 1 is a cutaway side view of a conventional ion plating apparatus.
【図２】 他の従来例の截断側面図FIG. 2 is a cutaway side view of another conventional example.
【図３】 従来のイオンプレーティング装置の集束コイ
ルにより形成される磁場の線図FIG. 3 is a diagram of a magnetic field formed by a focusing coil of a conventional ion plating apparatus.
【図４】 従来のイオンプレーティング装置による成膜
速度分布図FIG. 4 is a film-formation speed distribution chart of a conventional ion plating apparatus.
【図５】 従来のイオンプレーティング装置によるＴｉ
Ｎ膜の形成不良状態を示すＸ線回折強度の線図FIG. 5: Ti by a conventional ion plating device
Diagram of X-ray diffraction intensity showing poor formation of N film
【図６】 本発明の実施例のイオンプレーティング装置
の截断面図FIG. 6 is a sectional view of an ion plating apparatus according to an embodiment of the present invention.
【図７】 図６のＡ−Ａ線断面図7 is a sectional view taken along line AA of FIG.
【図８】 本発明の実施例による磁場の線図FIG. 8 is a diagram of a magnetic field according to an embodiment of the present invention.
【図９】 本発明の実施例の磁場の変動を示す線図FIG. 9 is a diagram showing the fluctuation of the magnetic field in the example of the present invention.
【図１０】 本発明の実施例に於ける電子ビーム電流と
第２集束コイル電流の制御状態を示す線図FIG. 10 is a diagram showing a control state of an electron beam current and a second focusing coil current in the embodiment of the present invention.
【図１１】 本発明の実施例による成膜速度分布図FIG. 11 is a film formation rate distribution diagram according to an embodiment of the present invention.
【図１２】 本発明の実施例によるＴｉＮ膜のＸ線回折
強度の線図FIG. 12 is a diagram of an X-ray diffraction intensity of a TiN film according to an example of the present invention.
１ 真空室 ２ 被処理物 ３ 直流
バイアス装置
４ ハース ５、５ａ、５ｂ、５ｃ、５ｄ 電子
ビーム発生装置
６ ガス導入口 ７、８、１３ 集束コイル
９、９ａ、９ｂ、９ｃ、９ｄ 電子ビーム
１０ 成膜材料 １２ 電離空間
１４、１４ａ、１４ｂ、１４ｃ、１４ｄ 電子ビーム発
生用電源
１５、１５ａ、１５ｂ、１５ｃ、１５ｄ 第２集束コイ
ル
１６ 出力制御装置DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Object to be processed 3 DC bias device 4 Hearths 5, 5a, 5b, 5c, 5d Electron beam generator 6 Gas inlets 7, 8, 13 Focusing coils 9, 9a, 9b, 9c, 9d Electron beam 10 Membrane material 12 Ionization space 14, 14a, 14b, 14c, 14d Power source for electron beam generation 15, 15a, 15b, 15c, 15d Second focusing coil 16 Output control device
───────────────────────────────────────────────────── フロントページの続き (72)発明者 井口 征夫 千葉県千葉市中央区川崎町１番地 川崎 製鉄株式会社 技術研究本部内 (56)参考文献 特開 平４−365854（ＪＰ，Ａ) 特開 昭63−47362（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C23C 14/00 - 14/58 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Masao Iguchi 1 Kawasaki-cho, Chuo-ku, Chiba-shi, Chiba Kawasaki Steel Works, Ltd. Technical Research Division (56) Reference JP-A-4-365854 (JP, A) Sho 63-47362 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) C23C 14/00-14/58
Claims (2)
物と、該真空室内の下方に設けられた成膜材料を溶解さ
せるハースと、ガス導入口とを設け、該被処理物にはこ
れに直流バイアスをかける直流バイアス装置が接続さ
れ、更に、該ハースに向けて電子ビームを供給する電子
ビーム発生装置を複数個設けて該各電子ビーム発生装置
に夫々独立に電子ビームを発生させるための電源を夫々
接続し、該電子ビーム発生装置から供給される電子を効
率よく成膜材料へ照射させると共に蒸発する成膜材料と
導入ガスをイオン化するための磁場を形成する集束コイ
ルをハースの周囲と上方に備え、更に、該ハースから蒸
発する成膜材料のイオンと該ガス導入口から導入したガ
スのイオン及びプラズマを揺動させる複数の集束コイル
を被処理物の背後に備えたイオンプレーティング装置で
あって、前記各電源に、前記電子ビームの前記成膜材料
への照射位置を変化させて揺動させるための出力制御装
置を設け、該出力制御装置で前記各電源の出力を制御し
て前記電子ビームの前記成膜材料への照射位置を揺動さ
せながら、前記被処理物の背後に備えた前記複数の集束
コイルへの電流を制御して、前記ハースから蒸発する前
記成膜材料のイオンと前記導入ガスのイオン及びプラズ
マを前記電子ビームと同期して揺動させながら前記被処
理物に向けて誘導し、前記被処理物の表面に形成される
反応蒸着膜の組成分布を制御することを特徴とするイオ
ンプレーティング装置。1. A vacuum chamber is provided with an object to be processed on which a vapor-deposited film is formed, a hearth provided below the vacuum chamber to dissolve a film-forming material, and a gas introduction port. Is connected to a DC bias device for applying a DC bias, and further, a plurality of electron beam generators for supplying an electron beam to the hearth are provided, and each electron beam generator is provided.
Power sources for independently generating electron beams
Focusing coils are provided around and above the hearth, which are connected to each other to efficiently irradiate the film forming material with electrons supplied from the electron beam generator and to form a magnetic field for ionizing the film forming material and the introduced gas that evaporate. , Further steamed from the hearth
Ion of the film forming material emitted and the gas introduced from the gas inlet
Multiple focusing coils for oscillating ion and plasma
With an ion plating device equipped with
And each of the power supplies is provided with the electron beam deposition material.
Output control device for changing and oscillating the irradiation position on the
The output control device controls the output of each power source.
Swing the irradiation position of the electron beam onto the film forming material.
The plurality of focusings provided behind the object to be processed.
Before controlling the current to the coil to evaporate from the hearth
Ion of the film forming material, ion of the introduced gas, and plasma
The object to be processed is oscillated in synchronization with the electron beam.
It is guided toward the physical object and is formed on the surface of the object to be processed.
An ion plating device characterized by controlling the composition distribution of a reaction deposited film .
物と、該真空室内の下方に設けられた成膜材料を溶解さ
せるハースと、ガス導入口とを設け、該被処理物にはこ
れに直流バイアスをかける直流バイアス装置が接続さ
れ、更に、該ハースに向けて電子ビームを供給する電子
ビーム発生装置を複数個設けて該各電子ビーム発生装置
に夫々独立に電子ビームを発生させるための電源を夫々
接続し、該電子ビーム発生装置から供給される電子を効
率よく成膜材料へ照射させると共に蒸発する成膜材料と
導入ガスをイオン化するための磁場を形成する集束コイ
ルをハースの周囲と上方に備え、更に、該ハースから蒸
発する成膜材料のイオンと該ガス導入口から導入したガ
スのイオン及びプラズマを揺動させる複数の集束コイル
を前記被処理物の背後に備えたイオンプレーティング装
置に於いて、前記各電源の出力を制御して前記電子ビー
ムの前記成膜材料への照射位置を揺動させながら、前記
被処理物の背後に備えた前記複数の集束コイルへの電流
を制御して、前記ハースから蒸発する前記成膜材料のイ
オンと前記導入ガスのイオン及びプラズマを前記電子ビ
ームと同期して揺動させながら前記被処理物に向けて誘
導し、前記被処理物の表面に形成される反応蒸着膜の組
成分布を制御することを特徴とするイオンプレーティン
グによる蒸着膜の膜厚と組成分布を制御する方法。2. The vacuum chamber is provided with an object to be processed on which a vapor deposition film is formed, a hearth provided below the vacuum chamber to dissolve a film-forming material, and a gas introduction port. is connected to a DC bias device for applying a DC bias thereto, further, generating an electron beam each independently to the respective electron beam generator is provided a plurality of electron beam generating apparatus for supplying an electron beam toward the hearth Turn the respective <br/> connection for focusing to form a magnetic field for ionizing the film forming material and introducing gas evaporated with irradiates the electrons supplied from the electron beam generator efficiently to the film-forming material A plurality of focusing coils are provided around the hearth and above the hearth , and further, ions of the film forming material evaporated from the hearth and ions and plasma of the gas introduced from the gas inlet are oscillated.
The In ion plating apparatus having behind the object to be processed, while oscillating the irradiation position of the to the film-forming material of the electron beam by controlling the output of each power supply, the
Current to the plurality of focusing coils provided behind the workpiece
By controlling the induced toward the object to be processed while the ions and ions of the plasma and the introduction gas in the film-forming material that evaporates is swung in synchronization with the electron beam from the hearth, the object to be processed Ion plating characterized by controlling the composition distribution of the reaction-deposited film formed on the surface of silicon
Method of controlling the film thickness and composition distribution of the deposited film by grayed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05262593A JP3464998B2 (en) | 1993-03-12 | 1993-03-12 | Ion plating apparatus and method for controlling thickness and composition distribution of deposited film by ion plating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05262593A JP3464998B2 (en) | 1993-03-12 | 1993-03-12 | Ion plating apparatus and method for controlling thickness and composition distribution of deposited film by ion plating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06264238A JPH06264238A (en) | 1994-09-20 |
| JP3464998B2 true JP3464998B2 (en) | 2003-11-10 |
Family
ID=12920001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP05262593A Expired - Fee Related JP3464998B2 (en) | 1993-03-12 | 1993-03-12 | Ion plating apparatus and method for controlling thickness and composition distribution of deposited film by ion plating |
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| Country | Link |
|---|---|
| JP (1) | JP3464998B2 (en) |
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|---|---|---|---|---|
| JP5787917B2 (en) * | 2013-02-21 | 2015-09-30 | 中外炉工業株式会社 | Film forming method and film forming apparatus |
| CN113174564B (en) * | 2021-04-26 | 2022-07-26 | 绍兴市辰丰家居有限公司 | Aluminum product vacuum coating device |
-
1993
- 1993-03-12 JP JP05262593A patent/JP3464998B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06264238A (en) | 1994-09-20 |
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