CN216404519U - Thermal resistance type evaporation equipment - Google Patents
Thermal resistance type evaporation equipment Download PDFInfo
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- CN216404519U CN216404519U CN202122723917.2U CN202122723917U CN216404519U CN 216404519 U CN216404519 U CN 216404519U CN 202122723917 U CN202122723917 U CN 202122723917U CN 216404519 U CN216404519 U CN 216404519U
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- thermal evaporation
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- 230000008020 evaporation Effects 0.000 title claims abstract description 31
- 238000001704 evaporation Methods 0.000 title claims abstract description 31
- 150000002500 ions Chemical class 0.000 claims abstract description 57
- 238000002207 thermal evaporation Methods 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 238000007747 plating Methods 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000007789 gas Substances 0.000 claims description 143
- 230000001133 acceleration Effects 0.000 claims description 15
- 238000001816 cooling Methods 0.000 claims description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000010937 tungsten Substances 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000012141 concentrate Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
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Abstract
The application relates to a thermal resistance type evaporation device, which comprises a device shell, a plating pot, a thermal evaporation system and at least one gas ionization system, wherein the plating pot, the thermal evaporation system and the at least one gas ionization system are positioned in the device shell, wherein the equipment shell is provided with an accommodating cavity, the plating pot is arranged on one side of the accommodating cavity, the plating pot comprises a base plate facing the thermal evaporation system, the thermal evaporation system is arranged at the other side of the accommodating cavity relative to the plating pot, the position of the thermal evaporation system corresponds to that of the plating pot, the thermal evaporation system heats a film material to form target molecules, at least one gas ionization system is arranged at one side of the accommodating cavity adjacent to the thermal evaporation system and provides gas ions, so that the target molecules are driven by the gas ions to move to the substrate, and the target molecules form a film layer on the surface of the substrate.
Description
Technical Field
The application relates to the technical field of evaporation, in particular to thermal resistance type evaporation equipment.
Background
The principle of the thermal resistance type evaporation process is that a Tungsten Boat (Tungsten Boat) is heated to melt and evaporate film materials in the Tungsten Boat to form gaseous molecules which are finally deposited on the surface of a substrate to form a film, the energy of material particles is generally only a few electron volts or lower, and the particles do not have enough energy when forming the film on the surface of the material, so that the particles cannot form dense arrangement when forming the film on the surface of the substrate. In order to increase the energy of the material particles in the deposition process and generate a denser film, a substrate heating method is usually adopted in the past, and when the temperature is high enough, the film quality can be ensured, but the method limits the application of many other fields, especially the application of low-temperature materials. In addition, the gaseous molecules formed by evaporation are not subjected to external force, the disorder of motion of the gaseous molecules and other factors, so that the film layer prepared by the conventional scheme is rough, poor in quality and poor in uniformity of film thickness among the chips.
Therefore, the technical staff needs to solve the problem that the vapor molecules formed by evaporation are not affected by external force and the disorder of the movement of the molecules, which results in the prior art that the prepared film is rough, the quality is poor and the uniformity of the film thickness among the chips is poor.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned shortcomings of the prior art, the present application aims to provide a thermal resistance evaporation apparatus for improving the film quality and the uniformity of the film thickness between the sheets, which aims to solve the problems of the prior art that the vapor molecules formed by evaporation are not subjected to external force and the disorder of the movement thereof, which results in the rough film layer, poor quality and poor uniformity of the film thickness between the sheets.
A thermal resistance type evaporation equipment comprises an equipment shell, a plating pot, a thermal evaporation system and at least one gas ionization system, wherein the plating pot, the thermal evaporation system and the at least one gas ionization system are located in the equipment shell, the equipment shell is provided with an accommodating cavity, the plating pot is arranged on one side of the accommodating cavity, the plating pot comprises a substrate, the substrate faces the thermal evaporation system, the thermal evaporation system is arranged on the other side, opposite to the plating pot, of the accommodating cavity and corresponds to the position of the plating pot, the thermal evaporation system heats a film material to form target molecules, the at least one gas ionization system is arranged on one side, close to the thermal evaporation system, of the accommodating cavity and provides gas ions, the gas ions drive the target molecules to move to the substrate, and the target molecules form a film layer on the surface of the substrate.
To sum up, the thermal resistance formula evaporation equipment of this application passes through gas ionization system and carries out the ionization to gas and give gas ion kinetic energy with higher speed to the gas ion after the ionization, gas ion is through the striking the target molecule that the heating of thermal evaporation system evaporated realizes energy exchange, the target molecule that the heating of thermal evaporation system evaporated obtains kinetic energy and reaches the substrate surface and forms the rete, and the adhesion of filming is better. Meanwhile, the gas ionization systems are symmetrically arranged on two sides of the thermal evaporation system, and the orientation angles of the gas ionization systems can be adjusted, so that target molecules can uniformly reach the substrate, and the inter-chip film thickness uniformity is improved.
Optionally, each gas ionization system includes an air inlet unit, a plurality of radio frequency coils, a discharge unit and a grid unit, wherein the air inlet unit is communicated with the discharge unit, the air inlet unit guides gas into the discharge unit, the radio frequency coils are disposed on one side of the discharge unit back to the grid unit, the radio frequency coils ionize the gas guided into the discharge unit by the air inlet unit to generate gas ions, the gas ions are output to the grid unit through a gas outlet of the discharge unit, the grid unit is aligned with the gas outlet of the discharge unit, and the grid unit accelerates the gas ions output by the discharge unit to a predetermined speed.
Optionally, each gas ionization system further includes a cooling unit disposed on opposite sides of the discharge unit, and the cooling unit is configured to cool the gas ionization system.
Optionally, the grid unit includes a screen grid, an acceleration grid, and a deceleration grid, wherein the screen grid is disposed to be aligned with the gas outlet of the discharge unit, the screen grid concentrates the gas ions formed by the discharge unit, the acceleration grid is disposed on a side of the screen grid opposite to the gas outlet, the acceleration grid accelerates the gas ions concentrated by the screen grid, the deceleration grid is disposed on a side of the acceleration grid opposite to the screen grid, and the deceleration grid adjusts the gas ions accelerated by the acceleration grid to the predetermined speed, so that the gas ions drive the target molecules to move to the substrate.
Optionally, the gas ionization system further includes a housing, the plurality of radio frequency coils, the discharge unit, the cooling unit, and the grid unit are all located in the housing, an opening is opened at a position of the housing corresponding to the plating pot, and a position of the opening corresponds to a position of the grid unit.
Optionally, the gas is argon.
Optionally, the thermal evaporation system is a tungsten boat.
Optionally, at least one of the gas ionization systems is angularly adjustable.
Optionally, the thermal evaporation system is disposed below the accommodating cavity of the equipment housing and corresponds to the middle position of the plating pot.
Optionally, the gas ionization system is a radio frequency gas ionization system.
To sum up, the thermal resistance formula evaporation equipment of this application passes through gas ionization system and carries out the ionization to gas and give gas ion kinetic energy with higher speed to the gas ion after the ionization, gas ion is through the striking the target molecule that the heating of thermal evaporation system evaporated realizes energy exchange, the target molecule that the heating of thermal evaporation system evaporated obtains kinetic energy and reaches the substrate surface and forms the rete, and the adhesion of filming is better. Meanwhile, the gas ionization systems are symmetrically arranged on two sides of the thermal evaporation system, and the orientation angles of the gas ionization systems can be adjusted, so that target molecules can uniformly reach the substrate, and the inter-chip film thickness uniformity is improved.
Drawings
Fig. 1 is a schematic structural diagram of a thermal resistance evaporation apparatus disclosed in an embodiment of the present application;
fig. 2 is a schematic structural diagram of the gas ionization system shown in fig. 1 according to the embodiment of the present application.
Description of reference numerals:
100-thermal resistance type evaporation equipment;
110-an equipment enclosure;
112-a housing cavity;
120-plating a pot;
140-a thermal steaming system;
160-gas ionization system;
161-an air intake unit;
162-a radio frequency coil;
163-discharge cells;
1632-air outlet;
164-a cooling unit;
165-a grid cell;
1651-screen grid;
1652-accelerating grid;
1653-deceleration grid;
168-a housing;
1682-opening;
10-target molecules.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the present application.
The principle of the thermal resistance type evaporation process is that a Tungsten Boat (Tungsten Boat) is heated to melt and evaporate film materials in the Tungsten Boat to form gaseous molecules which are finally deposited on the surface of a substrate to form a film, the energy of material particles is generally only a few electron volts or lower, and the particles do not have enough energy when forming the film on the surface of the material, so that the particles cannot form dense arrangement when forming the film on the surface of the substrate. In order to increase the energy of the material particles in the deposition process and generate a denser film, a substrate heating method is usually adopted in the past, and when the temperature is high enough, the film quality can be ensured, but the method limits the application of many other fields, especially the application of low-temperature materials. In addition, the gaseous molecules formed by evaporation are not subjected to external force, the disorder of motion of the gaseous molecules and other factors, so that the film layer prepared by the conventional scheme is rough, poor in quality and poor in uniformity of film thickness among the chips. Therefore, the technical staff needs to solve the problem that the vapor molecules formed by evaporation are not affected by external force and the disorder of the movement of the molecules, which results in the prior art that the prepared film is rough, the quality is poor and the uniformity of the film thickness among the chips is poor.
Based on this, the present application is expected to provide a solution to the above technical problems, which can solve the problems of the vapor molecules formed by evaporation causing the film layer to be rough, poor in quality and poor in the uniformity of the film thickness between the sheets due to the absence of external force and the disorder of the movement thereof, and the details thereof will be described in the following examples.
The scheme of the application elaborates a thermal resistance type evaporation device for improving the film quality and the inter-chip film thickness uniformity.
Please refer to fig. 1, which is a schematic structural diagram of a thermal resistance evaporation apparatus according to an embodiment of the present application. As shown in fig. 1, the present application provides a thermal resistance evaporation apparatus 100, which comprises an apparatus housing 110, and a plating pot 120, a thermal evaporation system 140 and at least one gas ionization system 160 located in the apparatus housing 110. In the embodiment of the present application, two gas ionization systems 160 are taken as an example for explanation, where the apparatus housing 110 is used as a hollow shell structure of the thermal resistance evaporation apparatus 100, and has a closed accommodating cavity 112, the plating pot 120 is disposed on one side of the accommodating cavity 112 of the apparatus housing 110 (i.e., above the accommodating cavity), the thermal evaporation system 140 is disposed on the other side of the accommodating cavity 112 of the apparatus housing 110 (i.e., below the accommodating cavity 112) relative to the plating pot 120 and corresponds to the position of the plating pot 120, and the two gas ionization systems 160 are disposed on the other side of the accommodating cavity 112 of the apparatus housing 110 (i.e., below the accommodating cavity 112 and adjacent to the thermal evaporation system 140) and are respectively located on two opposite sides of the thermal evaporation system 140.
In the embodiment of the present application, the plating pot 120 includes a substrate (not shown) disposed on a side of the plating pot 120 facing the thermal evaporation system 140. It is understood that the plating pot 120 and the substrate may be separate structural members, wherein the substrate is mounted at a position of the plating pot 120 facing the thermal evaporation system 140, and the plating pot 120 rotates the substrate to make the film layer on the surface of the substrate more uniform.
The thermal evaporation system 140 is configured to heat and evaporate a film material, so that the film material is heated and evaporated to form target molecules 10, and the target molecules 10 are located in the accommodating cavity 112 and located between the plating pot 120 and the thermal evaporation system 140. In the present embodiment, the thermal evaporation system 140 may be a tungsten boat.
In an exemplary embodiment, the thermal evaporation system 140 is disposed below the receiving cavity 112 of the equipment housing 110 and corresponds to a middle position of the plating pot 120.
In an exemplary embodiment, the two gas ionization systems 160 are configured to ionize gas and accelerate ionized gas ions, so that the accelerated gas ions drive the target molecules 10 to move to the substrate, and a film layer with a uniform thickness is formed on the surface of the substrate.
Specifically, in the application embodiment, the gas ionization system 160 ionizes the introduced gas and accelerates ionized gas ions to give kinetic energy to the gas ions, the gas ions impact the thermal evaporation system 140 to heat the evaporated target molecules 10 to realize energy exchange, and the thermal evaporation system 140 heats the evaporated target molecules 10 to obtain kinetic energy to reach the substrate, and form a film layer on the surface of the substrate. Therefore, compared with the disordered upward movement of the target molecules in the prior art, the target molecules 10 in the application have good adhesion when being hit on the substrate to form a film, and the film quality and the compactness are improved. In an exemplary embodiment of the present application, the gas ionization system 160 may be a Radio Frequency (RF) gas ionization system.
It can be understood that the orientation angle of at least one of the gas ionization systems 160 can be adjusted, so that the target molecules 10 in the whole accommodation chamber 112 can move to the substrate more uniformly, thereby forming a film layer with uniform thickness on the substrate surface, and improving the inter-chip film thickness uniformity.
Please refer to fig. 2, which is a schematic structural diagram of a gas ionization system 160 in the thermal resistance evaporation apparatus 100 shown in fig. 1 according to an embodiment of the present application. In the present embodiment, as shown in fig. 2, each of the gas ionization systems 160 includes a gas inlet unit 161, a plurality of radio frequency coils 162, a discharge unit 163, a cooling unit 164, and a grid unit 165. The air inlet unit 161 is communicated with the discharge unit 163, the rf coils 162 are disposed adjacent to one side of the discharge unit 163 opposite to the grid unit 165, the cooling unit 164 is disposed at two opposite sides of the discharge unit 163, and the grid unit 165 is disposed adjacent to one side of the discharge unit 163 opposite to the rf coils 162 and faces the target molecules 10 in the accommodating cavity 112.
In the present embodiment, the gas inlet unit 161 is used to introduce gas into the discharge unit 163. In the exemplary embodiment of the present application, the gas may be argon (Ar), and the gas inlet unit 161 introduces the gas into the discharge unit 163 through a gas inlet thereof. The plurality of rf coils 162 are used to ionize the gas introduced from the gas inlet unit 161 into the discharge unit 163 by high frequency waves to generate gas ions. The discharge unit 163 is configured to accommodate the gas introduced into the discharge unit 163 by the gas inlet unit 161, provide an ionization field, ionize the gas by the high-frequency waves generated by the plurality of rf coils 162 to form gas ions, and output the gas ions to the grid unit 165.
In the embodiment of the present application, the discharge unit 163 may be a discharge chamber, which is provided with an air outlet 1632, the air outlet 1632 is disposed opposite to the air inlet of the air inlet unit 161, the air outlet 1632 corresponds to the position of the grid unit 165, and the discharge unit 163 outputs the formed gas ions to the grid unit 165 through the air outlet 1632.
In the embodiment of the present application, the cooling unit 164 is used to cool the gas ionization system 160, so as to prevent the gas ionization system 160 from being damaged due to overheating. The grid unit 165 is aligned with the gas outlet 1632 of the discharge unit 163, and is configured to accelerate the gas ions formed by the discharge unit 163 to a predetermined speed, so that the accelerated gas ions drive the target molecules 10 to form a film layer with a uniform thickness on the surface of the substrate.
Specifically, in the application embodiment, the grid unit 165 is disposed in alignment with the air outlet 1632 of the discharge unit 163, that is, the grid unit 165 is connected to the discharge unit 163 and covers the air outlet 1632 of the discharge unit 163. The grid unit 165 accelerates the ionized gas ions to give corresponding kinetic energy to the gas ions, the gas ions impact the thermal evaporation system 140 to heat the evaporated target molecules 10 to realize energy exchange, the thermal evaporation system 140 heats the evaporated target molecules 10 to obtain kinetic energy to reach the substrate, and a film layer is formed on the surface of the substrate.
In the embodiment of the present application, the grid unit 165 includes a screen grid 1651, an acceleration grid 1652, and a deceleration grid 1653. The screen gate 1651 is disposed on the air outlet 1632 of the discharge unit 163, the acceleration gate 1652 is disposed on a side of the screen gate 1651 opposite to the air outlet, and the deceleration gate 1653 is disposed on the acceleration gate 1652, that is, the screen gate 1651, the acceleration gate 1652, and the deceleration gate 1653 are sequentially aligned with the air outlet 1632 of the discharge unit 163.
In the embodiment of the present application, the screen electrode 1651 is used to concentrate gas ions formed by the discharge cells 163. Wherein the screen gate 1651 may be positively charged. The accelerating grid 1652 is used for accelerating the gas ions concentrated by the screen 1651. Wherein the accelerating gate 1652 may apply a negative voltage. The deceleration grid 1653 is configured to adjust the gas ions accelerated by the acceleration grid 1652 to the predetermined speed, and the gas ions adjusted to the predetermined speed form an ion beam and move toward the substrate, so that the gas ions drive the target molecules to move to the surface of the substrate.
In the embodiment of the present application, the kinetic energy obtained by the gas ions is determined by the magnitude of the positive voltage applied by the screen gate 1651 and the negative voltage applied by the deceleration gate 1653. That is, the kinetic energy obtained by the gas ions is determined by the potential difference between the screen gate 1651 and the deceleration gate 1653, and the gas ions can impact and drive the target molecules 10 to obtain kinetic energy to reach the substrate and form a film on the substrate surface.
In the embodiment of the present application, the gas ionization system 160 further includes a housing 168, the housing 168 is an outer shell of the gas ionization system 160, the rf coils 162, the discharge unit 163, the cooling unit 164 and the grid unit 165 are all located in the housing 168, the gas inlet unit 161 may be a hollow gas tube, a portion of which is located in the housing 168 and is electrically connected to the discharge unit 163, and another portion of the gas inlet unit 161 is located outside the housing 168 and is used for introducing gas into the discharge unit 163.
In the embodiment of the application, the casing 168 is provided with an opening 1682 corresponding to the position of the plating pot 120, and the position of the opening 1682 corresponds to the position of the deceleration grid 1653 of the grid unit 165, so that the deceleration grid 1653 of the grid unit 165 is exposed out of the casing 168. That is, the grid unit 165 is disposed adjacent to the side of the discharge unit 163 opposite to the rf coil 162 and aligned with the opening 1682.
Referring to fig. 1 to 2, when the thermal resistance evaporation apparatus 100 is used, that is, when the thermal resistance evaporation apparatus 100 heats and evaporates a film material on the substrate to form a film layer, the gas ionization system 160 ionizes gas and accelerates ionized gas ions to give kinetic energy to the gas ions, the gas ions impact the thermal evaporation system 140 to heat evaporated target molecules 10 to realize energy exchange, and the thermal evaporation system 140 heats the evaporated target molecules 10 to obtain kinetic energy to reach the substrate surface to form the film layer, so that the adhesion of the formed film is better. The thermal evaporation system 140 heats and evaporates the film material, so that the film material is heated and evaporated to form target molecules 10, and the target molecules 10 are located in the accommodating cavity 112 and between the plating pot 120 and the thermal evaporation system 140. The gas ionization system 160 ionizes gas and accelerates ionized gas ions to give kinetic energy to the gas ions, the gas ions impact the target molecules 10 heated and evaporated by the thermal evaporation system 140 to realize energy exchange, the target molecules 10 heated and evaporated by the thermal evaporation system 140 obtain kinetic energy to reach the surface of the substrate to form a film layer, and thus all processes of coating the substrate can be completed.
To sum up, the thermal resistance formula evaporation equipment of this application passes through gas ionization system 160 and ionizes gas and give gas ion kinetic energy to gas ion after the ionization with higher speed, gas ion is through the striking the target molecule 10 that system 140 heating evaporated realizes energy exchange, the target molecule 10 that system 140 heating evaporated obtains kinetic energy and reaches the substrate surface and forms the rete, and the adhesion of filming is better. Meanwhile, the gas ionization systems 160 are symmetrically disposed on both sides of the thermal evaporation system 140, and the orientation angles of the gas ionization systems 160 can be adjusted so that the target molecules 10 can more uniformly reach the substrate, thereby improving the inter-chip film thickness uniformity.
It should be understood that the application of the present application is not limited to the above examples, and that modifications or changes may be made by those skilled in the art based on the above description, and all such modifications and changes are intended to fall within the scope of the appended claims.
Claims (10)
1. A thermal resistance type evaporation equipment is characterized by comprising an equipment shell, a plating pot, a thermal evaporation system and at least one gas ionization system, wherein the plating pot, the thermal evaporation system and the at least one gas ionization system are positioned in the equipment shell;
the equipment shell is provided with an accommodating cavity, and the plating pot is arranged on one side of the accommodating cavity;
the plating pot comprises a base plate, the base plate faces the thermal evaporation system, the thermal evaporation system is arranged on the other side, opposite to the plating pot, of the accommodating cavity and corresponds to the plating pot in position;
the thermal evaporation system heats the film material to form target molecules;
the at least one gas ionization system is arranged on one side, close to the thermal evaporation system, of the accommodating cavity and provides gas ions, so that the target molecules are driven by the gas ions to move to the substrate, and the target molecules form a film layer on the surface of the substrate.
2. The apparatus according to claim 1, wherein each gas ionization system comprises a gas inlet unit, a plurality of radio frequency coils, a discharge unit and a grid unit;
the gas inlet unit is communicated with the discharge unit and introduces gas into the discharge unit;
the radio frequency coils are arranged on one side, back to the grid unit, of the discharge unit, the radio frequency coils ionize gas led into the discharge unit by the gas inlet unit to generate gas ions, and the gas ions are output to the grid unit through a gas outlet of the discharge unit;
the grid unit is arranged in a manner of aligning to the gas outlet of the discharge unit, and accelerates the gas ions output by the discharge unit to a preset speed.
3. The apparatus according to claim 2, wherein each of the gas ionization systems further comprises a cooling unit disposed at opposite sides of the discharge unit, the cooling unit being configured to cool the gas ionization system.
4. The thermal resistance evaporation device according to claim 2, wherein the grid unit comprises a screen grid, an acceleration grid and a deceleration grid;
the screen grid is arranged in alignment with the gas outlet of the discharge unit, and the screen grid concentrates gas ions formed by the discharge unit;
the acceleration grid is arranged on one side of the screen grid, which is opposite to the gas outlet, and the acceleration grid accelerates the gas ions concentrated by the screen grid;
the deceleration grid is arranged on one side of the acceleration grid, which is opposite to the screen grid, and the deceleration grid adjusts the gas ions accelerated by the acceleration grid to the preset speed, so that the gas ions drive the target molecules to move to the substrate.
5. The thermal resistance evaporation equipment according to claim 3, wherein the gas ionization system further comprises a housing, the plurality of radio frequency coils, the discharge unit, the cooling unit and the grid unit are all located in the housing, an opening is formed in the housing at a position corresponding to the plating pot, and the position of the opening corresponds to the position of the grid unit.
6. The apparatus according to any one of claims 1 to 5, wherein the gas is argon.
7. The apparatus according to any one of claims 1 to 5, wherein the thermal evaporation system is a tungsten boat.
8. The apparatus according to any of claims 1-5, wherein at least one of the gas ionization systems is angularly adjustable.
9. The thermal resistance evaporation equipment according to any one of claims 1 to 5, wherein the thermal evaporation system is arranged below the accommodating cavity of the equipment shell and corresponds to the middle position of the plating pot.
10. The apparatus according to any one of claims 1-5, wherein the gas ionization system is a radio frequency gas ionization system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122723917.2U CN216404519U (en) | 2021-11-09 | 2021-11-09 | Thermal resistance type evaporation equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122723917.2U CN216404519U (en) | 2021-11-09 | 2021-11-09 | Thermal resistance type evaporation equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216404519U true CN216404519U (en) | 2022-04-29 |
Family
ID=81301443
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122723917.2U Active CN216404519U (en) | 2021-11-09 | 2021-11-09 | Thermal resistance type evaporation equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216404519U (en) |
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2021
- 2021-11-09 CN CN202122723917.2U patent/CN216404519U/en active Active
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Address after: 402760 No.69, Wushan Road, Biquan street, Bishan District, Chongqing Patentee after: Chongqing Kangjia Optoelectronic Technology Co.,Ltd. Country or region after: China Address before: 402760 No.69, Wushan Road, Biquan street, Bishan District, Chongqing Patentee before: Chongqing Kangjia Photoelectric Technology Research Institute Co.,Ltd. Country or region before: China |