CN118166316A - Heavy ion sputtering device for efficient preparation of isotope nuclear targets - Google Patents

Abstract

The present invention relates to the field of nuclear physics technology, and provides a heavy ion sputtering device for the efficient preparation of isotope nuclear targets, comprising: a vacuum chamber; a 2.45GHz microwave-driven ion source, used to generate a heavy ion high-current beam in a single charge state, the 2.45GHz microwave-driven ion source being connected to the vacuum chamber; a focusing electrode system, used to focus the heavy ion high-current beam to form a high-density beam, the beam spot size of the high-density beam being less than 2mm; a three-dimensionally adjusted sample substrate, arranged in the vacuum chamber; a rotating target, used to carry the three-dimensionally adjusted sample substrate, and the rotating target is rotatably arranged in the vacuum chamber. The present invention, because the 2.45GHz electron cyclotron resonance ion source belongs to a non-polarized discharge, can generate a high-current ion beam, can work stably for a long time under a wide range of gas pressures, has good repeatability, a wide range of ion types, has no life limit, and will not cause beam pollution, has a single charge state, a large beam intensity, a long life, stable operation, a large ion sputtering area, and high target preparation efficiency.

Description

Heavy ion sputtering device for efficient preparation of isotope nuclear targets

Technical Field

The invention relates to the technical field of nuclear physics, and in particular to a heavy ion sputtering device for efficiently preparing isotope nuclear targets.

Background technique

The synthesis of new nuclides is an important research direction in the field of nuclear physics. The experiment uses the beam generated by a high-energy large heavy ion accelerator to produce nuclear reactions and obtain new nuclides. In nuclear physics experiments, high-quality isotope nuclear targets play a vital role and directly affect the success of new nuclide synthesis experiments. For isotope nuclear targets with high melting points, high prices, and very low yields, heavy ion sputtering is the most feasible target making method. Use low-energy heavy ion beams to bombard isotope targets to make nuclear targets.

The core components of the heavy ion sputtering device are the ion source, beam focusing system, and target system. In the prior art, the ion source in the heavy ion sputtering device is a Penning discharge ion source, and the ion source generates a heavy ion beam that bombards the target material after being accelerated by the anode, and then sputters to the substrate to make a nuclear target. Among them, the ion source is at a low potential, and the target material is at a high potential of 10,000 volts.

However, the advantages of the sputtering device in the prior art are simple structure, and the disadvantages are low beam intensity, short working life, frequent ion source ignition, and high frequency of equipment maintenance. Due to the above reasons, the target making efficiency is extremely low, and the target making cycle is longer than 5 months, which seriously affects the research work in the direction of new nuclide synthesis.

Summary of the invention

The present invention provides a heavy ion sputtering device for efficiently preparing isotope nuclear targets, which is used to solve the defect of low target preparation efficiency in the prior art and improve the target preparation efficiency.

The present invention provides a heavy ion sputtering device for efficiently preparing isotope nuclear targets, comprising:

Vacuum chamber;

A 2.45 GHz microwave-driven ion source, used to generate a single-charge state heavy ion strong flux beam, the 2.45 GHz microwave-driven ion source is connected to the vacuum chamber;

A focusing electrode system, used for focusing the heavy ion high-current beam to form a high-density beam, wherein the beam spot size of the high-density beam is less than 2 mm;

A three-dimensionally regulated sample substrate is disposed in the vacuum chamber;

The rotating target is used to carry the three-dimensionally adjusted sample substrate, and the rotating target is rotatably disposed in the vacuum chamber.

According to a heavy ion sputtering device for efficient preparation of isotope nuclear targets provided by the present invention, the 2.45 GHz microwave driven ion source comprises:

A microwave generator for generating 2.45 GHz microwaves;

Magnets, used to generate the magnetic field structure required for 2.45GHz microwaves;

Arc cavity;

An air intake system for providing inert gas;

Leading electrode;

The 2.45 GHz microwave is coupled to the arc cavity through a matching waveguide to heat the electrons, and collides with the inert gas to generate inert gas plasma, and the inert gas plasma generates the heavy ion strong flux beam under the extraction electrode.

According to the heavy ion sputtering device for efficiently preparing isotope nuclear targets provided by the present invention, the inert gas is argon or xenon.

According to a heavy ion sputtering device for efficiently preparing isotope nuclear targets provided by the present invention, the air intake system comprises:

High-voltage platform;

Mass flow controller, used to regulate the intake air flow;

The isolation transformer is used to supply power to the equipment on the high-voltage platform and isolate the electrostatic high voltage of 100,000 volts.

According to a heavy ion sputtering device for efficient preparation of isotope nuclear targets provided by the present invention, the focusing electrode system includes two groups of electrostatic tube lenses, each group of the electrostatic tube lenses is loaded with a voltage of several thousand volts to focus the heavy ion high-current beam.

According to a heavy ion sputtering device for efficiently preparing isotope nuclear targets provided by the present invention, the vacuum chamber comprises:

Vacuum chamber;

A mechanical pump, one end of which is connected to the external gas;

A molecular pump has one end connected to the other end of the mechanical pump and the other end connected to the vacuum chamber.

According to a heavy ion sputtering device for efficiently preparing isotope nuclear targets provided by the present invention, the rotating target comprises:

Motor;

A rotating mandrel connected to the motor and rotatably disposed in the vacuum chamber;

A magnetic fluid connected to the rotating mandrel;

A target support is connected to the magnetic fluid, and the target support is used to carry the three-dimensional adjustment sample substrate.

According to a heavy ion sputtering device for efficient preparation of isotope nuclear targets provided by the present invention, an angle valve is provided between the mechanical pump and the molecular pump.

According to a heavy ion sputtering device for efficient preparation of isotope nuclear targets provided by the present invention, the control accuracy of the mass flow controller is 0.1 sccm.

A heavy ion sputtering device for efficiently preparing isotope nuclear targets provided by the present invention also includes:

A supporting platform, on which the vacuum chamber is arranged.

The heavy ion sputtering device for efficient preparation of isotope nuclear targets provided by the present invention generates a heavy ion strong current beam in a single charge state through a 2.45GHz microwave driven ion source. Since the 2.45GHz electron cyclotron resonance ion source belongs to an electrodeless discharge, it can generate a high-current ion beam that can work stably for a long time under a wide range of gas pressures, has good repeatability, a wide range of ion types, no life limit, and will not cause beam pollution. It has a single charge state, high beam intensity, long life, stable operation, large ion sputtering area, and high target preparation efficiency. It is the best choice for isotope target preparation in the field of new nuclide synthesis. The heavy ion sputtering device for efficient preparation of isotope nuclear targets provided by the present invention can successfully replace the original device, providing a strong guarantee for the efficient preparation of nuclear targets of a new generation.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more clearly illustrate the technical solutions in the present invention or the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

FIG1 is a schematic structural diagram of a heavy ion sputtering device for efficiently preparing isotope nuclear targets provided by the present invention;

Reference numerals:

1. Vacuum chamber; 2. 2.45 GHz microwave driven ion source; 3. Rotating target; 4. Molecular pump; 5. Angle valve; 6. Support platform.

Detailed ways

In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

In the description of the embodiments of the present invention, it should be noted that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limitations on the embodiments of the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

The following describes in conjunction with Figure 1 a heavy ion sputtering device for efficient preparation of isotope nuclear targets provided by an embodiment of the present invention, comprising a vacuum chamber 1, a 2.45 GHz microwave driven ion source 2, a focusing electrode system, a three-dimensionally adjusted sample substrate and a rotating target 3, wherein the 2.45 GHz microwave driven ion source 2 is used to generate a high-current beam of heavy ions in a single charge state, and the 2.45 GHz microwave driven ion source is connected to the vacuum chamber; the focusing electrode system is used to focus the high-current beam of heavy ions to form a high-density beam, and the beam spot size of the high-density beam is less than 2 mm; the three-dimensionally adjusted sample substrate is arranged in the vacuum chamber; the rotating target 3 is used to carry the three-dimensionally adjusted sample substrate, and the rotating target 3 is rotatably arranged in the vacuum chamber 1.

The 2.45GHz microwave driven ion source 2 can generate 2.45GHz microwaves, which are coupled to the arc cavity through a matching waveguide to heat electrons, and collide with the gas to generate argon plasma. The argon plasma generates a 10keV Ar+ beam under the extraction electrode, which is focused by the focusing electrode system to form a beam spot with a diameter of 1 to 2mm, and then bombards the sample. The sputtered rare isotope ions are slowly deposited on the rotating target, and finally a nuclear target is formed.

In a feasible embodiment of the present invention, the ion source includes a microwave generator, a magnet, an arc cavity, an air intake system and an extraction electrode. The microwave generator is used to generate 2.45GHz microwaves. The magnet is used to generate the magnetic field structure required for the 2.45GHz microwaves. The generated 2.45GHz microwaves are transmitted through a rectangular waveguide and coupled to the arc cavity to heat electrons. After heating, the electrons gain energy and collide with inert gas molecules. After collision ionization, plasma is formed. After these plasmas are extracted with a positive voltage, a heavy ion strong current beam can be generated. When the inert gas is argon or xenon, the heavy ion strong current beam is Ar ⁺ , Xe ⁺ beam. The high ionization rate ion source consumes less gas and generates a strong current ion beam under the vacuum required for nuclear target preparation.

Furthermore, the air intake system includes a high-voltage platform, a mass flow controller and an isolation transformer. The isolation transformer is used to power the equipment on the high-voltage platform and isolate the electrostatic high voltage of 100,000 volts. The MFC precisely controls the air intake flow rate with a control accuracy of 0.1sccm.

In a feasible embodiment of the present invention, the focusing electrode system includes two groups of electrostatic tube lenses, each group of electrostatic tube lenses is loaded with a voltage of several thousand volts to focus the heavy ion strong current beam, and the beam size after focusing is 1 to 2 mm. During the operation of the electrostatic tube lens, stray ions are prevented from bombarding and contaminating the electrode.

In a feasible embodiment of the present invention, the vacuum chamber includes a vacuum chamber, a mechanical pump and a molecular pump. One end of the mechanical pump is connected to the external gas, and the other end is connected to the molecular pump. The other end of the molecular pump is connected to the vacuum chamber. The working gas entering the arc chamber is ionized, and the ionized gas forms plasma. The unionized working gas enters the vacuum chamber. An angle valve is installed between the mechanical pump and the molecular pump. When the angle valve is started, the remaining gas is transported to the inlet of the mechanical pump through the molecular pump, and then the mechanical pump is discharged to the outside. Among them, the molecular pump is a vacuum pump that uses a high-speed rotating rotor to transfer momentum to gas molecules so that they obtain a directional speed, so that they are compressed and driven to the exhaust port and then drawn away by the front stage.

In a feasible embodiment of the present invention, the rotating target includes a motor, a rotating mandrel, a magnetic fluid and a target support. The motor and the connecting shaft are placed in the atmosphere and connected to the rotating mandrel in the vacuum through the magnetic fluid, so that the vacuum seal can be ensured and the target can be precisely linked. The continuous working life of the magnetic fluid is higher than 8000 hours. For rare isotope samples with high melting points, the beam and the target are required to work stably and reliably. A stable and reliable beam is crucial to the successful preparation of nuclear targets. The precise control of the rotating target directly affects the uniformity and deposition rate of the sample sputtering.

In summary, the 2.45 GHz microwave-driven heavy ion sputtering device of the present invention has a wide range of beam ion types, high quality and high target making efficiency, and can be used for research on the synthesis of new nuclides in the field of nuclear physics.

In the description of the embodiments of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "connected" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the embodiments of the present invention can be understood according to specific circumstances.

In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "mode", "specific mode", or "some modes" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or mode are included in at least one embodiment or mode of the embodiment of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or mode. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or modes in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or modes described in this specification and the features of the different embodiments or modes, without contradiction.

Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims (10)

1. A heavy ion sputtering apparatus for efficient preparation of an isotope nuclear target, comprising:

A vacuum chamber (1);

A 2.45GHz microwave driven ion source (2) for producing a heavy ion intense stream of a single charge state, the 2.45GHz microwave driven ion source in communication with the vacuum chamber;

the focusing electrode system is used for focusing the heavy ion strong beam to form a high-density beam, and the beam spot size of the high-density beam is smaller than 2mm;

The three-dimensional adjusting sample substrate is arranged in the vacuum cavity;

and the rotary target (3) is used for bearing the three-dimensional adjustment sample substrate, and the rotary target (3) is rotatably arranged in the vacuum cavity (1).

2. The heavy ion sputtering apparatus for efficient production of isotope nuclear targets according to claim 1, characterized in that the 2.45GHz microwave driven ion source (2) comprises:

A microwave generator for generating 2.45GHz microwaves;

A magnet for generating a magnetic field structure required for 2.45GHz microwave;

An arc chamber;

a gas inlet system for providing an inert gas;

an extraction electrode;

the 2.45GHz microwave is coupled to the arc cavity heating electrons through a matching waveguide, and collides with the inert gas to generate inert gas plasma, and the inert gas plasma generates the heavy ion strong stream under the extraction electrode.

3. The heavy ion sputtering apparatus for efficient production of an isotope core target according to claim 2, wherein the inert gas is argon or xenon.

4. The heavy ion sputtering apparatus for efficient production of an isotope nuclear target according to claim 2, wherein the air intake system comprises:

A high pressure platform;

The mass flow controller is used for regulating and controlling the air inlet flow;

and the isolation transformer is used for supplying power to equipment on the high-voltage platform and isolating the electrostatic high voltage of one hundred thousand volts.

5. The heavy ion sputtering apparatus for efficient production of isotope nuclear targets of claim 1 wherein said focusing electrode system comprises two sets of electrostatic tube lenses, each set of said electrostatic tube lenses being loaded with a voltage of several kilovolts, focusing said heavy ion intense beam.

6. Heavy ion sputtering apparatus for efficient production of isotope nuclear targets according to claim 1, characterized in that the vacuum chamber (1) comprises:

A vacuum chamber;

one end of the mechanical pump is communicated with the outside air;

And one end of the molecular pump (4) is communicated with the other end of the mechanical pump, and the other end of the molecular pump is communicated with the vacuum chamber.

7. Heavy ion sputtering device for efficient production of isotope nuclear targets according to claim 1, characterized in that the rotating target (3) comprises:

A motor;

The rotary mandrel is connected with the motor and is rotatably arranged in the vacuum chamber;

The magnetic fluid is connected with the rotary mandrel;

And the target support is connected with the magnetic fluid and is used for bearing the three-dimensional adjustment sample substrate.

8. Heavy ion sputtering device for efficient production of isotope nuclear targets according to claim 6, characterized in that an angle valve (5) is provided between the mechanical pump and the molecular pump (4).

9. The heavy ion sputtering apparatus for efficient production of an isotope core target of claim 4, wherein the control accuracy of the mass flow controller is 0.1sccm.

10. The heavy ion sputtering apparatus for efficient production of an isotope nuclear target according to claim 1, further comprising:

And the vacuum cavity (1) is arranged on the supporting platform (6).