CN220224312U - Magnetron sputtering coating device - Google Patents
Magnetron sputtering coating device Download PDFInfo
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- CN220224312U CN220224312U CN202321943822.4U CN202321943822U CN220224312U CN 220224312 U CN220224312 U CN 220224312U CN 202321943822 U CN202321943822 U CN 202321943822U CN 220224312 U CN220224312 U CN 220224312U
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- 239000011248 coating agent Substances 0.000 title claims abstract description 23
- 238000000576 coating method Methods 0.000 title claims abstract description 23
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 17
- 238000004544 sputter deposition Methods 0.000 claims abstract description 17
- 239000013077 target material Substances 0.000 claims abstract description 14
- 239000011261 inert gas Substances 0.000 claims description 16
- 230000017525 heat dissipation Effects 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 2
- 239000003574 free electron Substances 0.000 abstract description 11
- 239000007789 gas Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- Physical Vapour Deposition (AREA)
Abstract
The application relates to a magnetron sputtering coating device, which comprises a host machine body, a magnetic field control system, a power supply system, a vacuum chamber, a target material and a target table, wherein the target material and the target table are arranged in the vacuum chamber; the target material is cylindrical, the outer surface of the target material is a sputtering surface, and the magnetic field control system is arranged on the inner surface; the magnetic field control system comprises magnetic rings, wherein the magnetic rings are fixed on the inner surface of the target material in an alternating arrangement mode with different polarities, so that a closed annular magnetic field is formed on the inner surface of the target material, and the power supply system is used for supplying power to the host body; the free electrons are enabled to spirally run on the surface of the target through the closed annular magnetic field, so that the collision probability between the free electrons and gas atoms is increased, and the problems of lower collision probability between the electrons and the gas atoms, and reduced sputtering efficiency and film quality are solved.
Description
Technical Field
The application relates to the field of vacuum coating, in particular to a magnetron sputtering coating device.
Background
With the rapid development of electronic and information technologies, vacuum coating technology is beginning to be applied to electronic devices such as integrated circuits, display devices, solar cells and the like so as to improve the performance and stability of the devices; in addition, vacuum coating is widely used in the fields of automobile industry, architectural decoration, mold manufacturing, anti-corrosion coating and the like.
Among the related technical means, one of the most commonly used techniques for vacuum coating is magnetron sputtering, which is to control ions in plasma by using a magnetic field to bombard a target material, so as to generate evaporation and deposition processes of a thin film material, thereby realizing thin film coating on the surface of a substrate, and having higher deposition rate, uniformity and accuracy.
Aiming at the technical scheme, the problem that the collision probability between electrons and gas atoms is low in the working process of the magnetron sputtering equipment, so that the sputtering efficiency and the film quality are reduced is solved.
Disclosure of Invention
In order to solve the problems of lower collision probability between electrons and gas atoms and reduced sputtering efficiency and film quality, the application provides a magnetron sputtering coating device.
The magnetron sputtering coating device comprises a host machine body, a magnetic field control system, a power supply system, a vacuum chamber, a target material and a target table, wherein the target material and the target table are arranged in the vacuum chamber; the target is cylindrical, the outer surface of the target is a sputtering surface, and the inner surface of the target is an installation surface of the magnetic field control system; the magnetic field control system comprises magnetic rings which have different polarities, are fixed on the inner surface of the target in an alternating arrangement mode, form a closed annular magnetic field on the inner surface of the target, and the power supply system is used for supplying power to the host body.
Preferably, the power supply system comprises a direct current power supply and a radio frequency power supply, wherein the direct current power supply is connected with the target, and the radio frequency power supply is connected with the target table.
As a preferable scheme, the assembly base is provided with a temperature sensor, and the temperature sensor is connected with the target table and is used for detecting the temperature of the target table; the side of host computer body is provided with temperature controller for according to temperature sensor's testing result regulation target table's temperature.
As a preferable scheme, the assembly base is provided with a negative pressure groove and an inert gas through groove, the negative pressure groove is connected with a vacuum pump, the vacuum chamber is conveniently adjusted to be in a negative pressure state, and the inert gas through groove is connected with an inert gas bottle and is used for introducing inert gas into the vacuum chamber.
As an optimal scheme, the side edge of the host machine body is also provided with a heat dissipation groove, and the heat dissipation groove is used for heat dissipation of the host machine body during working.
Compared with the prior art, the application has the following beneficial effects: by adopting the cylindrical target and the magnetic rings, the magnetic field control system can form a closed annular magnetic field on the inner surface of the target, so that the collision probability between electrons and gas atoms is enhanced, the sputtering efficiency and the film quality are improved, and the problems of lower collision probability between electrons and gas atoms and reduced sputtering efficiency and film quality are solved.
Drawings
FIG. 1 is a schematic diagram of an overall structure of a magnetron sputtering coating device according to an embodiment of the present application;
FIG. 2 is an exploded view of a magnetron sputtering coating device according to an embodiment of the present application;
fig. 3 is an exploded schematic view of a target in an embodiment of the present application.
Reference numerals illustrate:
1. a host body; 11. a temperature controller; 12. a heat sink; 2. a magnetic field control system; 3. a power supply system; 31. a direct current power supply; 32. a radio frequency power supply; 4. a vacuum chamber; 41. an upper cover plate; 42. assembling a base; 421. a temperature sensor; 422. a negative pressure tank; 423. an inert gas through groove; 5. a target material; 6. a target table.
Detailed Description
The present utility model will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present utility model more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the utility model.
The same or similar reference numerals in the drawings of the present embodiment correspond to the same or similar components; in the description of the present utility model, it should be understood that, if there is an azimuth or positional relationship indicated by terms such as "upper", "lower", "left", "right", etc., based on the azimuth or positional relationship shown in the drawings, it is only for convenience of describing the present utility model and simplifying the description, but it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be constructed and operated in a specific azimuth, and thus terms describing the positional relationship in the drawings are merely illustrative and should not be construed as limitations of the present patent, and specific meanings of the terms described above may be understood by those skilled in the art according to specific circumstances.
The implementation of the present utility model will be described in detail below with reference to specific embodiments;
referring to fig. 1 to 3, a magnetron sputtering coating device is composed of a main body 1, a magnetic field control system 2, a power supply system 3 for supplying power to the main body 1, a vacuum chamber 4, a target 5 and a target table 6, wherein the target 5 is arranged in the vacuum chamber 4, the vacuum chamber 4 is arranged above the main body 1, the vacuum chamber 4 is provided with an upper cover plate 41 and an assembly base 42, the target 5 is arranged on the upper cover plate 41, the target table 6 is arranged on the assembly base 42, and a certain interval distance exists between the target 5 and the target table 6; the whole target 5 is cylindrical, the outer surface of the target 5 is a sputtering surface, atoms or molecules of a target material are converted into a gaseous state from a solid state and deposited on the surface to be plated, the surface area of the target 5 is fully utilized, and the utilization rate and the service life of the target 5 are improved. The inner surface of which is the mounting surface of the magnetic field control system 2; meanwhile, the magnetic field control system 2 comprises magnetic rings, wherein the magnetic rings are uniformly distributed along the inner surface of the target 5 and are fixed on the inner surface of the target 5 in an alternating arrangement mode, so that the magnetic rings form a closed annular magnetic field on the inner surface of the target 5, free electrons are enabled to spirally run near the surface of the target 5, the collision probability between the free electrons and gas atoms is increased, and the ionization rate of the gas atoms is improved; and the sputtering surface is circular, so that the shielding and influence of the magnetic field control system 2 on sputtering particles on the surface of the target 5 can be reduced, the sputtering uniformity and the film performance are improved, and the problems of lower collision probability between electrons and gas atoms, and reduced sputtering efficiency and film quality are solved.
Referring to fig. 1 to 3, the power supply system 3 for supplying power includes a dc power supply 31 and a radio frequency power supply 32, wherein the dc power supply 31 is connected to the target 5, the dc power supply 31 is used for providing energy of electrons in the sputtering process, and electrons collide to detach atoms or molecules of the target 5, form gaseous species, and deposit on a coating material of the target table 6; the radio frequency power supply 32 is connected with the target table 6, and the high frequency electric field provided by the radio frequency power supply 32 is mainly used for assisting the sputtering process, wherein the radio frequency power is used for controlling the ion bombardment effect; so as to be convenient for carrying out optimal control according to different targets 5 and target tables 6, realizing the effective sputtering of different types of targets 5 and target tables 6 with better or worse conductivity, insulativity or semi-conductivity and the like, and avoiding the problems of gas decomposition, pollution and the like.
Referring to fig. 1 to 3, the dc power supply 31 and the rf power supply 32 each have an adjustable output voltage and output frequency, and the sputtering rate and composition of the thin film can be controlled by adjusting the bias voltage and current density of the dc power supply 31; the energy and flux of the ion bombardment are regulated and controlled through the adjustment of the radio frequency power supply 32, so that the structure, the density and the lattice orientation of the film are changed; the effect of realizing accurate control of the components, the structure and the performance of the film so as to meet the requirements of different applications is achieved.
Referring to fig. 1 to 3, in order to control the temperature in the vacuum chamber 4, a temperature sensor 421 is provided on the assembly base 42, and the temperature sensor 421 is provided on the target table 6 for monitoring the temperature of the target table 6 in real time; the temperature controller 11 is arranged on the side of the host body 1, the temperature of the target table 6 is timely regulated by the temperature controller 11 according to the detection result of the temperature sensor 421, so that the effect of controlling the temperature in the vacuum chamber 4 is achieved, the target table 6 can be kept in a proper temperature range, deposition and crystallization of a coating material are facilitated, and the problems of substrate temperature rise, damage and the like can be avoided.
Referring to fig. 1 to 3, a negative pressure tank 422 and an inert gas through tank 423 are provided on the assembly base 42, the negative pressure tank 422 is connected with a vacuum pump (not shown in the figure) having a vacuum pumping function, the vacuum chamber 4 is in a negative pressure state by the vacuum pump, impurities and moisture in the vacuum chamber 4 are removed, and a clean environment is provided for the subsequent coating; the inert gas through groove 423 is connected with an inert gas bottle (not shown in the figure), and inert gas is introduced into the vacuum chamber 4 through the inert gas bottle to protect the coating material from oxidation or other chemical reactions.
Referring to fig. 1 to 3, a heat dissipation groove 12 is further provided at a side of the main body 1, and the heat generated during operation of the main body 1 can be better dissipated to the surrounding environment through the heat dissipation groove 12, so that overheating is avoided, the normal operation temperature of the device is maintained, and the working efficiency and stability are improved.
The implementation principle of the magnetron sputtering coating device in the embodiment of the application is as follows: after the coating material is placed on the target table 6, the power supply system 3 is started, and the direct current power supply 31 applies a negative voltage to the target 5 to make the target become a cathode; the rf power source 32 applies a positive voltage to the target 6 to make it the anode. Meanwhile, an appropriate amount of inert gas (such as argon) is filled into the vacuum chamber 4 through the inert gas through groove 423, and a certain pressure is maintained.
Due to an electric field E between the target 5 and the target table 6, some free electrons E are generated on the target 5. Under the action of the electric field E, the free electrons E collide with the gas atoms Ar in the process of flying to the coating material on the target table 6, so that Ar+ positive ions and new free electrons E are generated by ionization. The newly generated free electrons e continue to fly toward the coating material on the target table 6 and collide with more gas atoms Ar, forming a cascade collision process.
Because the magnetic field control system 2 forms a closed annular magnetic field B on the inner surface of the target 5, free electrons E are subjected to the action of Lorentz force F=e (E+v×B) in the process of flying to the target table 6, so that the free electrons deviate from the original track and move in a spiral manner near the surface of the target 5, the collision probability between the free electrons E and the gas atoms Ar is increased, and the ionization rate of the gas atoms Ar is improved.
As the ionization rate of the gas atoms Ar is improved, more Ar+ positive ions are generated, the Ar+ positive ions are accelerated to fly to the target 5 under the action of the electric field E, and bombard the surface of the target 5 with high energy, so that the target 5 is sputtered. In the sputtered particles, neutral target atoms or molecules deposit on the target table 6 to coat the material and form a thin film.
The foregoing description of the preferred embodiments of the utility model is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the utility model.
Claims (5)
1. The magnetron sputtering coating device is characterized by comprising a host machine body (1), a magnetic field control system (2), a power supply system (3), a vacuum chamber (4), a target material (5) and a target table (6), wherein the target material (5) and the target table (6) are arranged in the vacuum chamber (4), the vacuum chamber (4) is arranged above the host machine body (1), the vacuum chamber (4) is provided with an upper cover plate (41) and an assembly base (42), the target material (5) is arranged on the upper cover plate (41), and the target table (6) is arranged on the assembly base (42); the target (5) is cylindrical, the outer surface of the target is a sputtering surface, and the inner surface of the target is the mounting surface of the magnetic field control system (2); the magnetic field control system (2) comprises magnetic rings which have different polarities, are fixed on the inner surface of the target (5) in an alternating arrangement mode, form a closed annular magnetic field on the inner surface of the target (5), and the power supply system (3) is used for supplying power to the host body (1).
2. The magnetron sputtering coating device according to claim 1, wherein the power supply system (3) comprises a direct current power supply (31) and a radio frequency power supply (32), the direct current power supply (31) is connected with the target (5), and the radio frequency power supply (32) is connected with the target table (6).
3. The magnetron sputtering coating device according to claim 1, wherein a temperature sensor (421) is arranged on the assembly base (42), and the temperature sensor (421) is connected with the target table (6) and is used for detecting the temperature of the target table (6); the side of the host body (1) is provided with a temperature controller (11) for adjusting the temperature of the target table (6) according to the detection result of the temperature sensor (421).
4. The magnetron sputtering coating device according to claim 1, wherein the assembly base (42) is provided with a negative pressure groove (422) and an inert gas through groove (423), the negative pressure groove (422) is connected with a vacuum pump so as to be convenient for adjusting the vacuum chamber (4) to be in a negative pressure state, and the inert gas through groove (423) is connected with an inert gas bottle and is used for introducing inert gas into the vacuum chamber (4).
5. The magnetron sputtering coating device according to claim 1, wherein a heat dissipation groove (12) is further formed in the side edge of the host machine body (1), and the heat dissipation groove (12) is used for heat dissipation of the host machine body (1) during operation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321943822.4U CN220224312U (en) | 2023-07-24 | 2023-07-24 | Magnetron sputtering coating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321943822.4U CN220224312U (en) | 2023-07-24 | 2023-07-24 | Magnetron sputtering coating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220224312U true CN220224312U (en) | 2023-12-22 |
Family
ID=89179344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321943822.4U Active CN220224312U (en) | 2023-07-24 | 2023-07-24 | Magnetron sputtering coating device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220224312U (en) |
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2023
- 2023-07-24 CN CN202321943822.4U patent/CN220224312U/en active Active
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