CN2690417Y - Plane ion source increased deposit coating machine - Google Patents
Plane ion source increased deposit coating machine Download PDFInfo
- Publication number
- CN2690417Y CN2690417Y CN 03211547 CN03211547U CN2690417Y CN 2690417 Y CN2690417 Y CN 2690417Y CN 03211547 CN03211547 CN 03211547 CN 03211547 U CN03211547 U CN 03211547U CN 2690417 Y CN2690417 Y CN 2690417Y
- Authority
- CN
- China
- Prior art keywords
- ion source
- plane
- source
- vacuum chamber
- workpiece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011248 coating agent Substances 0.000 title abstract description 5
- 238000000576 coating method Methods 0.000 title abstract description 5
- 238000000151 deposition Methods 0.000 claims abstract description 19
- 230000008021 deposition Effects 0.000 claims abstract description 16
- 230000007246 mechanism Effects 0.000 claims abstract description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 6
- 230000008020 evaporation Effects 0.000 claims description 19
- 238000001704 evaporation Methods 0.000 claims description 19
- 238000007747 plating Methods 0.000 claims description 14
- 230000005540 biological transmission Effects 0.000 claims description 5
- 230000002708 enhancing effect Effects 0.000 claims description 4
- 230000006698 induction Effects 0.000 claims description 4
- 230000007723 transport mechanism Effects 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 abstract description 37
- 239000010408 film Substances 0.000 abstract description 16
- 238000004544 sputter deposition Methods 0.000 abstract description 7
- 238000004140 cleaning Methods 0.000 abstract description 6
- 239000010409 thin film Substances 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 235000000396 iron Nutrition 0.000 abstract 1
- 150000001455 metallic ions Chemical class 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910021645 metal ion Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LCKIEQZJEYYRIY-UHFFFAOYSA-N Titanium ion Chemical compound [Ti+4] LCKIEQZJEYYRIY-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- Physical Vapour Deposition (AREA)
Abstract
The utility model relates to a reinforced-deposit coating machine with a plane ion source, which belongs to the technical field of physical gas deposition on the surface of a plasma body. The utility model comprises a vacuum system, a heating system, a biasing system, a gas feeding system, a workpiece driving mechanism, a plane ion source and magnetron sputtering metallic sputtering evaporator source, multiple arc metallic sputtering evaporator source, etc., wherein the plane ion source is composed of an inner anode, a slit cathode, a magnetic field, a cathode screen and an air passage. Under the condition of certain vacuum, the utility model can generate gas ions with certain energy for cleaning the surface of a workpiece; the gas irons react with metallic ions generated by a metallic evaporator source for depositing thin films with high binding force on the surface of the workpiece. The utility model is mainly used in the fields of handwork moulds, decorative plated films, functional thin films, etc., and is especially suitable for coating the surface of workpieces in a flat shape in large area.
Description
Technical field
The utility model belongs to plasma surface physical gas phase deposition technology field.
Background technology
Traditional vacuum plating unit is made up of vacuum system, heating system, grid bias power supply, airing system, workpiece transmission system and metal ion evaporation source.Under higher temperature conditions, be coated with film.Equipment of the present invention increases the plane ion source on the basis of traditional coating equipment, produce gaseous ion and clean and strengthen deposit film, and the advantage of filming equipment and technology is that coating temperature is low, and the film-substrate cohesion height is easy to control the structure and the performance of film.
Summary of the invention
The purpose of this utility model just provides a kind of plane ion source and produces gaseous ion, and the plane ion source of cleaning activation workpiece surface and enhancing deposition high-bond film strengthens the deposition plating machine.
Technical solution of the present utility model is, the plane ion source strengthens the deposition plating machine, comprise vacuum system, Workpiece transmission device 12, evaporation source, plane ion source 8 and plane ion source in gas pipe 5, plane ion source in gas pipe 5 is connected with vacuum chamber 11, Workpiece transmission device 12 is installed in the vacuum chamber 11, and evaporation source and plane ion source 8 are installed on vacuum chamber 11 walls simultaneously.
The utility model also comprises well heater 13, and well heater 13 is fixed in the vacuum chamber 11 in the vacuum system.
The utility model also comprises grid bias power supply 15, and the positive pole of grid bias power supply 15 connects vacuum chamber 11, and the negative pole of grid bias power supply 15 connects workpiece 14.
Evaporation source is a magnetron sputtering 9.
Evaporation source is a Vacuum Arc 10.
The plane ion source is made up of water-cooled anode 2, slit negative electrode 1, magnet 3, cathode screen 6, induction pipe 5 and power supply 7, cathode screen 6 is in slit negative electrode 1 inside, water-cooled anode 2 is in slit negative electrode 1 inside, and over against the slit of slit negative electrode 1, magnet 3 is in slit negative electrode 1 inside, induction pipe 5 is connected to slit negative electrode 1 inside, and power supply 7 positive poles are connected with water-cooled anode 2, and power supply 7 negative poles are connected with slit negative electrode 1.In discharge chamber 4, charge into of the same race or charge into gas with various respectively, as Ar, N
2Or other gas mixture such as carbon containing-hydrogen, oxygen, in number Pa～10
-2Under the Pa magnitude vacuum condition, under magnetic field and electric field action, produce the ion that carries energy; Require the slit of design negative electrode and the angle [alpha] of ionic fluid according to reality, water-cooled anode and shape of slit ion beam angle are generally at 0～60 °, and argon gas is general as the ion source of the gas that cleans or the carrier gas source of gas mixture.
The ion beam direction that the plane ion source produces and the direction of metal ion during the cleaning workpiece surface, are generally sent into argon gas all towards the workpiece coated surface; Send into reactant gases being coated with film, magnetron sputtering or multi sphere source metal such as Fig. 2 are installed in ion source one or both sides, plane.The workpiece to be plated surface, generally apart from plane ion source and controlled sputtering source 60-200mm scope, two discharge chambers are sent into same gas, when adopting metallic target of the same race, be coated with the film of identical composition, as when sending into gas with various, can be coated with multi-layer nano film and alloy film system continuously, when being coated with film, can on workpiece, apply bias voltage.
The slit of plane source slit negative electrode 1 is towards workpiece 14.
Vacuum chamber 11 is horizontal, the plane ion source 8 of workpiece in being fixed in vacuum chamber and a side of evaporation source, and workpiece transfer mechanism 12 is a horizontal transport mechanism.
Vacuum chamber 11 is vertical, and workpiece is fixed in the vacuum chamber 11, is positioned at the both sides of two-sided planar ion source 8 and two-sided evaporation source, and two-sided planar ion source 8 and two-sided evaporation source transport sector 12 are vertical transport sector.
Vacuum chamber 11 is circular vertical, and plane ion source 8 is fixed on vacuum chamber 11 walls with evaporation source, and workpiece transfer mechanism 12 is a traversing mechanism.
In horizontal and vertical vacuum chamber, generally be coated with large-scale workpiece.
The beneficial effect that the utility model reaches is that the plane ion source produces the gaseous ion that has certain energy, can cleaning workpiece, and form the rete of high-bond and required weave construction with the metal ion reaction.
Below in conjunction with drawings and Examples the utility model is further described.
Description of drawings
Fig. 1 is the ionogenic cross section structure in plane of the present utility model.
Fig. 2 is plane of the present utility model ion source and planar magnetic control sputtering spread pattern synoptic diagram.
Fig. 3 is plane of the present utility model ion source and twin magnetic controlled sputtering spread pattern synoptic diagram.
Fig. 4 is plane of the present utility model ion source and planar magnetic control sputtering and Vacuum Arc source spread pattern synoptic diagram.
Fig. 5 is plane of the present utility model ion source and Vacuum Arc source spread pattern synoptic diagram.
Fig. 6 is a vacuum system synoptic diagram of the present utility model.
Fig. 7 is that the utility model vacuum chamber is horizontal structural representation.
Fig. 8 is vertical vacuum of the present utility model chamber master's TV structure synoptic diagram.
Fig. 9 is a vertical vacuum of the present utility model chamber plan structure synoptic diagram.
Figure 10 is a circular vertical vacuum cell structure synoptic diagram of the present utility model.
Embodiment
The utility model is made up of vacuum chamber, plane ion source and magnetron sputtering.
1, the direction of the ion beam direction of plane ion source generation and metal ion during the cleaning workpiece surface, is sent into argon gas all towards the workpiece coated surface; Send into reactant gases being coated with film, magnetron sputtering or multi sphere source metal are installed in ion source both sides, plane, workpiece to be plated surface distance plane ion source and controlled sputtering source, two discharge chambers are sent into same gas, when adopting metallic target of the same race, be coated with the film of identical composition, when being coated with film, apply bias voltage.
2, plane ion source ion energy 400～2000V, line 1～20mA/cm is adjustable.Be coated with superhard thin film after the cleaning, feed Ar, N by a certain percentage
2And C
2H
2The titanium ion depositing Ti of mixed gas and the evaporation of titanium metal ions evaporation source
3NC, Ti
2NC, TiNC film system.Depositing temperature is between the room temperature to 200 ℃.After replacing Ti target is targets such as Zr, Cr, hard films such as synthetic ZrN, CrN.
3, be coated with the multi-layer nano compound film system, select different metal evaporation sources such as Ti, Ag and feed different atmosphere Ar, Ar+O respectively
2, on glass basis, prepare TiO
2-Ag-TiO
2Laminated film.
Claims (10)
1, the plane ion source strengthens the deposition plating machine, comprise vacuum system, Workpiece transmission device (12) and evaporation source, it is characterized in that, also comprise plane ion source (8) and plane ion source in gas pipe (5), plane ion source in gas pipe (5) is connected with vacuum chamber (11), Workpiece transmission device (12) is installed in the vacuum chamber (11), and evaporation source and plane ion source (8) are installed on vacuum chamber (11) wall simultaneously.
2, strengthen the deposition plating machine according to claims 1 described plane ion source, it is characterized in that, also comprise well heater (13), well heater (13) is fixed in the vacuum chamber (11) in the vacuum system.
3, strengthen the deposition plating machine according to claims 1 described plane ion source, it is characterized in that also comprise grid bias power supply (15), the positive pole of grid bias power supply (15) connects vacuum chamber (11), the negative pole of grid bias power supply (15) connects workpiece (14).
4, strengthen the deposition plating machine according to claims 1 described plane ion source, it is characterized in that evaporation source is magnetron sputtering (9).
5, strengthen the deposition plating machine according to claims 1 described plane ion source, it is characterized in that evaporation source is Vacuum Arc (10).
6, plane according to claim 1 ion source strengthens the deposition plating machine, it is characterized in that, the plane ion source is by water-cooled anode (2), slit negative electrode (1), magnet (3), cathode screen (6), induction pipe (5) and power supply (7) are formed, cathode screen (6) is in slit negative electrode (1) inside, water-cooled anode (2) is in slit negative electrode (1) inside, and over against the slit of slit negative electrode (1), magnet (3) is in slit negative electrode (1) inside, induction pipe (5) is connected to slit negative electrode (1) inside, power supply (7) is anodal to be connected with water-cooled anode (2), and power supply (7) negative pole is connected with slit negative electrode (1).
7, strengthen the deposition plating machine according to claim 1,6 described plane ion sources, it is characterized in that the slit of plane source slit negative electrode (1) is towards workpiece (14).
8, plane ion source enhancing deposition plating machine according to claim 1, it is characterized in that, vacuum chamber (11) is horizontal, workpiece in being fixed in vacuum chamber plane ion source (8) and a side of evaporation source, workpiece transfer mechanism (12) is a horizontal transport mechanism.
9, plane ion source enhancing deposition plating machine according to claim 1, it is characterized in that, vacuum chamber (11) is vertical, workpiece is fixed in the vacuum chamber (11), be positioned at the both sides of two-sided planar ion source (8) and two-sided evaporation source, two-sided planar ion source (8) and two-sided evaporation source transport sector (12) are vertical transport sector.
10, plane ion source enhancing deposition plating machine according to claim 1 is characterized in that vacuum chamber (11) is circular vertical, and plane ion source (8) is fixed on vacuum chamber (11) wall with evaporation source, and workpiece transfer mechanism (12) is a traversing mechanism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03211547 CN2690417Y (en) | 2003-02-20 | 2003-02-20 | Plane ion source increased deposit coating machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03211547 CN2690417Y (en) | 2003-02-20 | 2003-02-20 | Plane ion source increased deposit coating machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2690417Y true CN2690417Y (en) | 2005-04-06 |
Family
ID=34660928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03211547 Expired - Fee Related CN2690417Y (en) | 2003-02-20 | 2003-02-20 | Plane ion source increased deposit coating machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2690417Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108914091A (en) * | 2018-08-10 | 2018-11-30 | 成都极星等离子科技有限公司 | A kind of improved anode leafing component |
| CN111218655A (en) * | 2020-03-10 | 2020-06-02 | 沈阳中北真空设备有限公司 | Surface coating equipment and surface coating method for neodymium iron boron permanent magnet device |
| CN111334767A (en) * | 2020-03-10 | 2020-06-26 | 沈阳中北通磁科技股份有限公司 | Processing method of neodymium iron boron permanent magnet device |
-
2003
- 2003-02-20 CN CN 03211547 patent/CN2690417Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108914091A (en) * | 2018-08-10 | 2018-11-30 | 成都极星等离子科技有限公司 | A kind of improved anode leafing component |
| CN111218655A (en) * | 2020-03-10 | 2020-06-02 | 沈阳中北真空设备有限公司 | Surface coating equipment and surface coating method for neodymium iron boron permanent magnet device |
| CN111334767A (en) * | 2020-03-10 | 2020-06-26 | 沈阳中北通磁科技股份有限公司 | Processing method of neodymium iron boron permanent magnet device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050406 |