CN1459515A - Multiion cluster cosputtering settling nano film apparatus - Google Patents
Multiion cluster cosputtering settling nano film apparatus Download PDFInfo
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- CN1459515A CN1459515A CN 02114138 CN02114138A CN1459515A CN 1459515 A CN1459515 A CN 1459515A CN 02114138 CN02114138 CN 02114138 CN 02114138 A CN02114138 A CN 02114138A CN 1459515 A CN1459515 A CN 1459515A
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Abstract
An apparatus for preparing single-element or multi-element nanofilm by sputter deposition with single or multiple ion beams is disclosed, which features that the kinetic energy conversion of very-low-energy ions on target is used to migrate the atoms from target to substrate to form a nanofilm. It has also the functions of ion beam aided deposition, ion beam bombardment to strip target or substrate for cleaning purpose, and ion beam processing to form microstructure.
Description
Technical field: the present invention relates to a kind of multiple ion-beam sputtering deposit nanometer film (containing micron membranes) equipment that utilizes, be particularly related to and make as improved multiion cluster cosputtering settling nano film apparatus of multilayer film structure such as thin film sensor, thin film integrated circuit, magneticthin film device, high-temperature superconducting thin film, optical thin film, material modification films, its International Classification is C due to
23C
14/34
Background technology: the ion beam sputter deposition coating technique is for scientific research and produce novel process, the new technology that thin film coated is provided, for the film preparation of thin film sensor, thin film integrated circuit, magneticthin film device, superalloy conductor thin film, metal heterogeneous structural, the wide application field such as film preparation in the material modification provide new technique means.Along with the develop rapidly of ion beam coating membrane technique, and the continuous expansion and the extension of Application Areas, the manufacturing of ion beam sputter deposition filming equipment is greatly improved.Yet this kind equipment now, still based on single ion beam sputtering, though occurred three ion beam sputtering machines in recent years, but this class machine possesses maximum three constituent element alloys or compound film deposition of functional, the alloy or the compound film of cosputtering deposit four constituent element compositions are restricted, and do not have mass production capabilities simultaneously.Defectives such as in addition, the film of this class film deposition equipment deposit exists also that particle is big, homogeneity is bad, membranous loose, poor adhesion, needle pore defect is many, internal stress is big.
Summary of the invention: purpose of the present invention will provide a kind of have single ionic fluid and double-ion beam and multiple ion-beam deposit sputter exactly, can produce simple substance, two constituent elements, three constituent elements, four constituent element compositions, reaction in cosputtering deposit nanometer film is (containing micron membranes), that have mass production capabilities, highly versatile, reliable multiion cluster cosputtering settling nano film apparatus, and this device also has ion beam assisted deposition simultaneously, the ion beam bombardment original position is peeled off target and substrate base, realization atom level cleaning function and ionic fluid microstructure machining functions.
The kinetic energy conversion of the very low-energy ion of this equipment utilization on target, target atom moved out and nigh substrate on the material film of this atom of deposit.Control ion beam bombardment energy makes it between the atom of non-PVD state elastic collision take place, growth monatomic nanometer film (containing micron membranes) on substrate.This with nano-scale by the film of atomic layer deposition, realized the atomic linkage between different thin film layers, make rete have that adhesivity jail, homogeneity and compactness are good, the advantage of minimum internal stress, greatly improved the performance of film.
To achieve these goals, technical scheme of the present invention is: a kind of multiion cluster cosputtering settling nano film apparatus, it is characterized in that: by coating chamber (1), main ion source (2,3,4,5), assisting ion source (6,7,8), target support (9,10,11,12), planet rotary plating platform (13), cosputtering deposition station (18), neutralizer (19,20,21,22,23,24,25), target position control device (26,27,28,29), gate (30), viewing window (31), the auxiliary interface (32 of supplying gas, 33,37,38), the family of power and influence (34), frame (35), vacuum-pumping system (36), baffle plate (39), film thickness monitor (40, composition such as 41), wherein, described coating chamber (1) is circular vacuum chamber, be installed on frame (35) top, and the vacuum-pumping system (36) interior with being installed on frame (35) is connected by the family of power and influence (34); Described main ion source (2,3) is connected to power supply, can produce to focus on or parallel ionic fluid, and its ion gun discharge chamber can direct water-cooling, and over against the target position of target support (9,10), their symmetries are installed on the left and right sides of coating chamber (1) to the ionic fluid of emission respectively; Described main ion source (4,5) is connected to power supply, can produce and focus on or parallel ionic fluid, its ion gun discharge chamber can direct water-cooling, and the ionic fluid of emission is respectively over against the target position of target support (11,12), their symmetries be installed on coating chamber (1) just before, the right astern; Described assisting ion source (6,7) can produce parallel ionic fluid, be installed on the top of main ion source (2,3) respectively, its ion beam current direction is over against the workpiece position of planet rotary plating platform (13), assisting ion source (8) can produce parallel ionic fluid, be installed on coating chamber (1) top, right astern, its ion beam current direction is over against the workpiece position of cosputtering deposition station (18); Identical or different target all can be installed in described target support (9,10,11,12) positive and negative target position two sides, can be respectively to control them be level or vertical or a certain angle work of tilting by being positioned at the outer target position control device (26,27,28,29) of coating chamber (1); Described neutralizer (19,20,21,22,23,24,25) all is the devices that adopt the hot filament emitting electrons, their next-door neighbour main ion sources (2,3,4,5) and assisting ion source (6,7,8) and with they corresponding one by one installations.
The type of heating of described planet rotary plating platform (13) is an Electric heating, and it drives by the outer driving mechanism (131) of coating chamber (1), realizes revolution, rotation and the adjusting of rotating speed separately of many workpiece positions.
Described cosputtering deposition station (18) can realize rotating under the adjustment of deposition station adjustment mechanism (182) control, the three-dimensional motion of translation, 90 ° of rotations.
Described vacuum-pumping system (36) is to be made of molecular pump, mechanism's pump vacuum system, and they vacuumize and remain on suitable low pressure by the family of power and influence (34) to coating chamber (1).
Described film thickness monitor (40,41) next-door neighbour cosputtering deposition station (18) and planet rotary plating platform (13) are installed, and they provide the real-time field monitoring of production film thickness during the deposit.
The present invention has following advantage:
1., this system can 2 to 8 kinds of conductors of reaction in sputter, semi-conductor, dielectric simple substance material, obtain alloy and/or compound nano film (containing micron membranes) deposit successively and that dynamically mix deposit.
2., before thin-film deposition, bombardment is achieved as follows function: a, utilizes ionic fluid that target, substrate are carried out original position bombardment cleaning to substrate (or target) to utilize the assisted deposition ionic fluid, dirt removals such as water vapor, metal oxide with absorption, improve the purity of film, increase underlayer temperature simultaneously, helped increasing adhesive force.B, to the result of substrate low-energy ion beams bombardment, island one nuclear density that increases in the thin film deposition process covers with compactness that increases film and the ladder that improves film, reduces internal stress.Atomic linkage between c, realization substrate material and the deposition material improves sticking power.
3., in thin film deposition process, utilize low-energy ion beams bombardment just at the film of deposit, realize that original position is to the machinery of film, the improvement of electrical property, as reduce the film tensile stress, even tensile stress become stress, improve the mobility of film, pass covering, improve the optical characteristics of optical thin film thereby improve rank with the mobility of lattice in the improvement deposit; Improve the hardness of film; Improve the anisotropy of crystalline preferred orientation and magneticthin film.
4., that the component balanced time ratio of bombardment generates the many target of multi beam time the alloy film adopts compound single target to form time of alloy film is short, enhance productivity.
5., compare, during the work of this machine, the working parameter of machine and film forming processing parameter can be distinguished independent adjustment, are independent of each other with general plasma sputtering, can multiple choices processing parameter deposition film, and the broadened application scope.
6., compare, during the work of this machine, substrate is in the low temperature environment of high vacuum, has avoided being in the deposition film in the high-temperature plasma severe environment, and film quality improves greatly with general plasma sputtering.
Native system has by four main ion sources and an assisting ion source, four sputtering targets and the five ionic fluid cosputtering deposition systems that the cosputtering deposition station is formed, when wherein two, three main ion sources and the work of assisting ion source, then constituted the multi beam cosputtering deposition system of binary, triple combination; When the work of main ion source, or when main ion source and an assisting ion source job, single ion beam sputtering or double ion beam sputtered deposition system have then been constituted.In addition, by target position control device (not destroying vacuum environment), four target dislocations on the target support will be installed on, formed four new sputtering targets, they and four main ion sources (shared), two assisting ion sources and planet rotary plating platform are formed six ion beam sputter deposition systems.Therefore, this system have 1 to 8 kind of simple substance material deposit successively, dynamically mix the function of nanometer film (containing micron membranes) deposit, and energy original position, reactive sputtering deposit compound film, the ion bombardment of energy original position be peeled off and be cleaned target and substrate base, can carry out ion beam assisted deposition and have mass production capabilities.For the film preparation of thin film sensor, thin film integrated circuit, magneticthin film device, superalloy conductor thin film, metal heterogeneous structural, the wide application field such as film preparation in the material modification provide new technique means.
Description of drawings: the present invention is further described below in conjunction with accompanying drawing.
Fig. 1 is five ionic fluid cosputtering deposit nano film apparatus overall schematic of the embodiment of the invention.
Fig. 2 is five ionic fluid cosputtering deposit nano film apparatus right views of the embodiment of the invention.
Fig. 3 is six ion beam sputter deposition nano film apparatus overall schematic of the embodiment of the invention.
Fig. 4 is six ion beam sputter deposition nano film apparatus right views of the embodiment of the invention.
Embodiment: as shown in Figure 1 and Figure 2, a kind of five ionic fluid cosputtering deposit nano film apparatus are by coating chamber 1, main ion source 2,3,4,5, assisting ion source 8, target support 9,10,11,12, cosputtering deposition station 18, neutralizer 19,20,21,22,25, target position control device 26,27,28,29, gate 30, viewing window 31, the auxiliary interface 32,33,37,38 of supplying gas, the family of power and influence 34, frame 35, vacuum-pumping system 36, baffle plate 39, film thickness monitor 40 compositions such as grade.Wherein, described coating chamber 1 is circular vacuum chamber, is installed on frame 35 tops, and is connected by the family of power and influence 34 with vacuum-pumping system 36 in being installed on frame 35.The right on of coating chamber 1 is equipped with gate 30, offers viewing window 31 on the gate 30, and the operator sends workpiece or target into coating chamber 1 by gate 30, or takes out workpiece or target from coating chamber 1.Observe the process of sputtering deposits simultaneously by viewing window 31, so that can take immediate steps when finding in the deposition process unusual phenomenon to be arranged.
Described main ion source 2,3 symmetries are installed on the left and right sides of coating chamber 1, they are the graceful ion sources of a kind of employing hot filament electron-bombardment discharge-type Kraft, under same energy, can be with tens of times focusing or parallel beam current density bombardment processing, to improve sputter rate.In addition,, the bundle spot of ionic fluid can be changed within the specific limits, to satisfy the different sputter processing that require by the adjustment of ion optics.The ion gun discharge chamber in main ion source 2,3 is equipped with water-cooling system, can pass through the recirculated water direct water-cooling.Adjust by certain position during installation, make the ionic fluid of main ion source 2,3 emissions over against the target position of target support 9,10.In Fig. 1, the target 92,102 that install target support 9,10 belows is bombarded in main ion source 2,3 respectively, its atom that pounds is deposited to by certain angle on the workpiece 181 that is installed on cosputtering deposition station 18 tops and forms film.The below in main ion source 2,3 is separately installed with neutralizer 19,20, neutralizer 19,20 adopts the hot filament emitting electrons, utilize this virtual anode of the space positive charge formation of ion beam ionic medium body, realize the space charge neutralization of electronics immersion, with electroneutral bundle plasma body isolator is processed, avoided causing discharge and puncture because of the electric charge collection tires out.
Among Fig. 2, main ion source 4,5 symmetries be installed on coating chamber 1 just before, the right astern, they are ion sources identical with main ion source 2,3.Adjust by certain position during installation, make the ionic fluid of main ion source 4,5 emissions over against the target position of target support 11,12.The target 112,122 that install target support 11,12 belows is bombarded in main ion source 4,5 respectively, its atom that pounds is deposited to by certain angle on the workpiece 181 that is installed on cosputtering deposition station 18 tops and forms film.The top in main ion source 4,5 is separately installed with neutralizer 21,22, and the functional characteristics of neutralizer 21,22 is identical with neutralizer 19,20.
In five ionic fluid cosputtering deposit nanometer film systems, except that 2,3,4,5 work of main ion source, also work in assisting ion source 8.Assisting ion source 8 is the graceful ion sources of a kind of employing hot filament electron-bombardment discharge-type collimated beam Kraft, and it is installed on top, coating chamber 1 right astern, and its ion beam current direction is on the workpiece 181 of cosputtering deposition station 18.In thin film deposition process, assisting ion source 8 with low-energy ion beams bombardment just at the film of deposit, realize that original position is to the machinery of film, the improvement of electrical property, as reduce the film tensile stress, improve the mobility of film, pass covering thereby improve rank, improve the anisotropy of hardness, crystalline preferred orientation and the film of film with the mobility of lattice in the improvement deposit.Simultaneously, assisting ion source 8 can be bombarded workpiece 181 surfaces before deposit not, carries out the cleaning of workpiece surface atom level, so that removed dirt before thin-film deposition is to the workpiece surface.The below in assisting ion source 8 is equipped with neutralizer 25, and the effect of neutralizer 25 is identical with other neutralizer.
The film thickness monitor 40 of next-door neighbour's cosputtering deposition station 18 (film thickness monitor 41 next-door neighbour's planet rotary plating platforms 13 are installed, and its function is identical with film thickness monitor 40) provides the real-time field monitoring of growing film thickness during the deposit.The baffle plate 39 that is positioned at cosputtering deposition station 18 tops can carry out position adjustments by being installed on coating chamber 1 outer damper regulator 42, and workpiece 181 surfaces were avoided polluting during it was used to prevent sputter clean.Cosputtering deposition station 18 is installed on the top of deposition station adjustment mechanism 182, and deposition station adjustment mechanism 182 supports by the supporting mechanism 183 that is installed on the frame 35.Under the adjustment of deposition station adjustment mechanism 182 control, cosputtering deposition station 18 can realize rotating, the three-dimensional motion of translation, 90 ° of rotations, thereby improves the homogeneity of institute's deposition film.
As shown in Figure 3, Figure 4, a kind of six ion beam sputter deposition nano film apparatus, it has increased planet rotary plating platform 13 and film thickness monitor 41, and this moment, all worked in other four main ion sources and other two assisting ion sources except that not working in assisting ion source 8.At first by being installed on the target position control device 26 outside the coating chamber 1,27,28,29 adjust target support 9 respectively, 10,11,12, make main ion source 2,3,4, the target that is bombarded during 5 bombardments becomes 91 respectively, 101,111,121, the atomic orientation that bombards target simultaneously and sputtered also obtains changing (target position control device 26,27,28,29 can control target support 9 respectively, 10,11, the 12nd, level still is vertical or a certain angle work of tilting), just in time deposit to the workpiece position 14 of planet rotary plating platform 13,15,16, (also a plurality of workpiece can be installed on the workpiece position of planet rotary plating platform 13, not shown) on 17.The assisting ion source 6,7 that lays respectively at 2,3 tops, main ion source in addition all can participate in work before the deposit sputter and in the deposition process, before deposit, they can peel off cleaning to workpiece and/or target material surface, to obtain the degree of cleaning of workpiece and/or target atom level, help the film of growing high-quality like this.In deposition process, the effect in assisting ion source 8 in the five ionic fluid cosputtering deposit nanometer film systems can be brought into play in assisting ion source 6,7.The top in assisting ion source 6,7 is equipped with neutralizer 23,24, and their effect is identical with other neutralizer.
The type of heating of planet rotary plating platform 13 is an Electric heating, and it drives by coating chamber 1 outer driving mechanism 131, realizes revolution, rotation and the adjusting of rotating speed separately of many workpiece positions.
In above two kinds of sputter deposition systems, the target of being adorned on the target support 9,10,11,12 can be identical, also can be different.In addition, can send into as gases such as oxygen, nitrogen by the auxiliary interface 32,33,37,38 of supplying gas in the deposition process,, generate compound film with the realization response sputtering deposit.
Vacuum-pumping system 36 is to be made of molecular pump, mechanism's pump vacuum system, and they vacuumize and remain on suitable low pressure by 34 pairs of coating chambers 1 of the family of power and influence.Molecular pump, mechanism's pump vacuum system are
Prior art.
Claims (5)
1, a kind of multiion cluster cosputtering settling nano film apparatus, it is characterized in that: by coating chamber (1), main ion source (2,3,4,5), assisting ion source (6,7,8), target support (9,10,11,12), planet rotary plating platform (13), cosputtering deposition station (18), neutralizer (19,20,21,22,23,24,25), target position control device (26,27,28,29), gate (30), viewing window (31), the auxiliary interface (32 of supplying gas, 33,37,38), the family of power and influence (34), frame (35), vacuum-pumping system (36), baffle plate (39), film thickness monitor (40, composition such as 41), wherein, described coating chamber (1) is circular vacuum chamber, be installed on frame (35) top, and the vacuum-pumping system (36) interior with being installed on frame (35) is connected by the family of power and influence (34); Described main ion source (2,3) is connected to power supply, can produce to focus on or parallel ionic fluid, and its ion gun discharge chamber can direct water-cooling, and over against the target position of target support (9,10), their symmetries are installed on the left and right sides of coating chamber (1) to the ionic fluid of emission respectively; Described main ion source (4,5) is connected to power supply, can produce and focus on or parallel ionic fluid, its ion gun discharge chamber can direct water-cooling, and the ionic fluid of emission is respectively over against the target position of target support (11,12), their symmetries be installed on coating chamber (1) just before, the right astern; Described assisting ion source (6,7) can produce parallel ionic fluid, be installed on the top of main ion source (2,3) respectively, its ion beam current direction is over against the workpiece position of planet rotary plating platform (13), assisting ion source (8) can produce parallel ionic fluid, be installed on coating chamber (1) top, right astern, its ion beam current direction is over against the workpiece position of cosputtering deposition station (18); Identical or different target all can be installed in described target support (9,10,11,12) positive and negative target position two sides, can be respectively to control them be level or vertical or a certain angle work of tilting by being positioned at the outer target position control device (26,27,28,29) of coating chamber (1); Described neutralizer (19,20,21,22,23,24,25) all is the devices that adopt the hot filament emitting electrons, their next-door neighbour main ion sources (2,3,4,5) and assisting ion source (6,7,8) and with they corresponding one by one installations.
2, multiion cluster cosputtering settling nano film apparatus according to claim 1, it is characterized in that: the type of heating of described planet rotary plating platform (13) is an Electric heating, it drives by the outer driving mechanism (131) of coating chamber (1), realizes revolution, rotation and the adjusting of rotating speed separately of many workpiece positions.
3, multiion cluster cosputtering settling nano film apparatus according to claim 1 is characterized in that: described cosputtering deposition station (18) can realize rotating under the adjustment of deposition station adjustment mechanism (182) control, the three-dimensional motion of translation, 90 ° of rotations.
4, multiion cluster cosputtering settling nano film apparatus according to claim 1, it is characterized in that: described vacuum-pumping system (36) is to be made of molecular pump, mechanism's pump vacuum system, and they vacuumize and remain on suitable low pressure by the family of power and influence (34) to coating chamber (1).
5, multiion cluster cosputtering settling nano film apparatus according to claim 1, it is characterized in that: described film thickness monitor (40,41) next-door neighbour cosputtering deposition station (18) and planet rotary plating platform (13) are installed, and they provide the real-time field monitoring of production film thickness during the deposit.
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| CN 02114138 CN1459515A (en) | 2002-05-21 | 2002-05-21 | Multiion cluster cosputtering settling nano film apparatus |
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| CN 02114138 CN1459515A (en) | 2002-05-21 | 2002-05-21 | Multiion cluster cosputtering settling nano film apparatus |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101824598A (en) * | 2009-02-16 | 2010-09-08 | 佳能安内华股份有限公司 | Sputtering apparatus, double rotary shutter unit, and sputtering method |
| CN102703875A (en) * | 2012-07-05 | 2012-10-03 | 哈尔滨工业大学 | Technological equipment for swept-angle magnetron sputtering deposition |
| RU2485209C1 (en) * | 2011-11-17 | 2013-06-20 | Учреждение Российской академии наук Институт автоматики и процессов управления Дальневосточного отделения Российской академии наук (ИАПУ ДВО РАН) | Formation method of ultrathin film |
| RU2486279C1 (en) * | 2011-11-17 | 2013-06-27 | Учреждение Российской академии наук Институт автоматики и процессов управления Дальневосточного отделения Российской академии наук (ИАПУ ДВО РАН) | Method of forming ultrathin film |
| RU2487188C1 (en) * | 2011-11-21 | 2013-07-10 | Учреждение Российской академии наук Институт автоматики и процессов управления Дальневосточного отделения Российской академии наук (ИАПУ ДВО РАН) | Method for formation of ultrathin film |
| CN104321459A (en) * | 2012-02-03 | 2015-01-28 | 希捷科技有限公司 | Methods of forming layers |
| CN107988579A (en) * | 2017-11-20 | 2018-05-04 | 北京鼎臣世纪超导科技有限公司 | A kind of ion beam sputtering assisted deposition machine |
| CN108531872A (en) * | 2018-08-07 | 2018-09-14 | 常州市知豆信息科技有限公司 | A kind of double-ion beam metal coating automation equipment |
| CN110541153A (en) * | 2018-05-29 | 2019-12-06 | 李紫茵 | Method for preparing film by deposition and film coating machine |
| CN111485213A (en) * | 2020-04-28 | 2020-08-04 | 上海超导科技股份有限公司 | Process method suitable for producing second-generation high-temperature superconducting tape |
| CN113789500A (en) * | 2021-08-04 | 2021-12-14 | 湖北三峡职业技术学院 | Ion plating device and method for automatically adjusting ion beam sputtering angle and incidence angle |
| CN114807875A (en) * | 2022-04-21 | 2022-07-29 | 上海大学 | Preparation method of amorphous alloy thick film of immiscible metal |
| CN114921757A (en) * | 2022-04-21 | 2022-08-19 | 上海大学 | Amorphous high-entropy alloy thick film preparation equipment and preparation method |
-
2002
- 2002-05-21 CN CN 02114138 patent/CN1459515A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101824598B (en) * | 2009-02-16 | 2012-05-30 | 佳能安内华股份有限公司 | Sputtering apparatus, double rotary shutter unit, and sputtering method |
| CN101824598A (en) * | 2009-02-16 | 2010-09-08 | 佳能安内华股份有限公司 | Sputtering apparatus, double rotary shutter unit, and sputtering method |
| RU2485209C1 (en) * | 2011-11-17 | 2013-06-20 | Учреждение Российской академии наук Институт автоматики и процессов управления Дальневосточного отделения Российской академии наук (ИАПУ ДВО РАН) | Formation method of ultrathin film |
| RU2486279C1 (en) * | 2011-11-17 | 2013-06-27 | Учреждение Российской академии наук Институт автоматики и процессов управления Дальневосточного отделения Российской академии наук (ИАПУ ДВО РАН) | Method of forming ultrathin film |
| RU2487188C1 (en) * | 2011-11-21 | 2013-07-10 | Учреждение Российской академии наук Институт автоматики и процессов управления Дальневосточного отделения Российской академии наук (ИАПУ ДВО РАН) | Method for formation of ultrathin film |
| CN104321459A (en) * | 2012-02-03 | 2015-01-28 | 希捷科技有限公司 | Methods of forming layers |
| CN102703875A (en) * | 2012-07-05 | 2012-10-03 | 哈尔滨工业大学 | Technological equipment for swept-angle magnetron sputtering deposition |
| CN107988579B (en) * | 2017-11-20 | 2019-12-03 | 北京鼎臣世纪超导科技有限公司 | A kind of ion beam sputtering assisted deposition machine |
| CN107988579A (en) * | 2017-11-20 | 2018-05-04 | 北京鼎臣世纪超导科技有限公司 | A kind of ion beam sputtering assisted deposition machine |
| CN110541153A (en) * | 2018-05-29 | 2019-12-06 | 李紫茵 | Method for preparing film by deposition and film coating machine |
| CN108531872A (en) * | 2018-08-07 | 2018-09-14 | 常州市知豆信息科技有限公司 | A kind of double-ion beam metal coating automation equipment |
| CN108531872B (en) * | 2018-08-07 | 2018-11-06 | 常州市知豆信息科技有限公司 | A kind of double-ion beam metal coating automation equipment |
| CN111485213A (en) * | 2020-04-28 | 2020-08-04 | 上海超导科技股份有限公司 | Process method suitable for producing second-generation high-temperature superconducting tape |
| CN113789500A (en) * | 2021-08-04 | 2021-12-14 | 湖北三峡职业技术学院 | Ion plating device and method for automatically adjusting ion beam sputtering angle and incidence angle |
| CN113789500B (en) * | 2021-08-04 | 2023-07-25 | 湖北三峡职业技术学院 | Ion plating device and method capable of automatically adjusting sputtering angle and incidence angle of ion beam |
| CN114807875A (en) * | 2022-04-21 | 2022-07-29 | 上海大学 | Preparation method of amorphous alloy thick film of immiscible metal |
| CN114921757A (en) * | 2022-04-21 | 2022-08-19 | 上海大学 | Amorphous high-entropy alloy thick film preparation equipment and preparation method |
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