CN1028546C - Arc-glowing ionized metal infusion process and its equipment - Google Patents

Arc-glowing ionized metal infusion process and its equipment Download PDF

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Publication number
CN1028546C
CN1028546C CN 90103841 CN90103841A CN1028546C CN 1028546 C CN1028546 C CN 1028546C CN 90103841 CN90103841 CN 90103841 CN 90103841 A CN90103841 A CN 90103841A CN 1028546 C CN1028546 C CN 1028546C
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China
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arc
source
metallic
gas
work piece
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CN 90103841
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CN1057073A (en
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潘俊德
范本惠
徐重
李成明
韩晋宏
郑维能
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TAIYUAN POLYTECHNIC UNIVERSITY
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TAIYUAN POLYTECHNIC UNIVERSITY
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Abstract

The present invention belongs to the field of surface metallurgy. The present invention utilizes the glow discharge phenomenon and the sputtering phenomenon of rarefied gases to arrange auxiliary source electrodes around a work piece; meanwhile, one or a plurality of cathode arc targets, which are used as the main metal source, are arranged on the wall of a container by means of the vacuum arc discharge phenomenon. The work piece is heated to a high temperature under the action of negative bias voltage, and a pure metal layer, an alloy layer, an alloy plating layer and a compound cementing layer, which have special physical, chemical and mechanical properties, can be formed on the surface of the work piece by means of the bombardment and the diffusion of metallic ions to be cemented. The present invention realizes the purposes of increasing the metallic cementation speed and optimizing the surface properties of the work piece.

Description

Arc-glowing ionized metal infusion process and its equipment
The invention belongs to surface metallurgic and thermo-chemical treatment category.
The method of current plasma surface metallurgic is a lot, wherein double-layer metallic glow ion cementation and arc light ion metallic cementation are that the former the ion diffraction of state-of-the-art technology that develops rapidly is relatively good, can handle complicated shape and big area workpiece, but rate of ionization is low, infiltration rate is slow than the arc light ion metallic cementation.Though and the latter has the rate of ionization height, the strong point that infiltration rate is fast, it is poor to have ion diffraction, is difficult to realize the shortcomings such as processing of endoporus and complicated shape.The present invention is in order to overcome above-mentioned shortcoming, on the basis of metallic glow ion cementation technology, cathode arc source is set as the main supply source of desiring the metallic cementation element ion, and this novel surface metallurgy method is referred to as the arc-added glow ion implantation technique.
Characteristics of the present invention are the glow discharge utmost point sputtering phenomenons that utilize in the rarefied gas, auxiliary source electrode is set around processed workpiece, assistant metal source as infiltration element, utilize hollow cathode effect that itself and workpiece are heated up rapidly, desire metallic cementation atoms of elements or ion that auxiliary source electrode sputters out, under electric field action, bombard workpiece surface, thus it be heating source be again the auxiliary supply source of infiltration element.Utilize the electric discharge phenomena of vacuum arc simultaneously, one or more metallic cathode arc sources directly are set on wall of container, as the main source of desiring metallic cementation.Constantly generation high-energy, high-density, high-speed metal ion flow, under the effect of workpiece negative bias, quicken to arrive workpiece surface, all active atomic or ions that are sputtered onto workpiece surface rely on diffusion and ion bombardment strength to infiltrate workpiece surface or be deposited on workpiece surface, form pure metal layer, alloyed layer, plating key coat and compound cementation coating.
Accompanying drawing is an arc-added glow ion metallizing device structural representation
1, bonnet (anode altogether) 2, striking hook
3, cathode arc source 4, arc source current
5, auxiliary source electrode power supply 6, substrate bias power supply
7, substrate rotating mechanism 8, vacuum device
9, negative electrode (substrate) 10, auxiliary source electrode
11, vision slit 12, temp measuring system
13, processed workpiece 14, plenum system
Accompanying drawings essential characteristic of the present invention, the present invention adopts one can vacuumize (8) and fill gas body medium (14) to form the sealed vessel of certain gaseous tension, and its final vacuum is not less than 1 * 10 -2Pa feeds rare gas element (Ar, Ne) and reactant gases (N 2, O 2, CH 4Deng), its operating air pressure is 5 * 10 -1Change in the-50Pa scope.In container, be provided with negative electrode (9), under the driving of the rotating mechanism that is connected with substrate (7), rotate with certain speed, workpiece (13) is positioned on the cathode base, between negative electrode and anode (bonnet) (1), but connect a direct current voltage controller power source (6) (0-2000V), the usefulness metal auxiliary source electrode of infiltration element (10) that certain distance is arranged with workpiece is set around workpiece, between auxiliary source electrode and anode (bonnet), connect an adjustable power of direct current (5) (0-2000V), auxiliary source electrode plays heated parts and supplies with infiltration element.Between auxiliary source electrode and cathode base, but can be also equi-potential not of equi-potential.
It is one or more that metallic cathode arc source (3) is set on wall of container, between as anodic bonnet and cathode arc source, connect adjustable low-voltage and high-current direct supply (4) (0-100V, 0-200A) by after arc initiation device (2) striking, from metallic cathode arc source surface, launch high-energy, high-density, high-speed metal ion stream, bombardment processed workpiece surface, it is to desire metallic cementation ion master source, heating source, it also is bombardment purification source, workpiece is after being heated to high temperature under the acting in conjunction of auxiliary source electrode and arc source, desire the metallic cementation ion and infiltrate workpiece surface by means of ion bombardment and diffusion process, form uniform pure metal layer, plating bonded alloy layer.
For example: A 3Steel and 20 steel ooze Ti, Al, Ni, 1Cr through the arc-added glow ion 18Ni 9Unit such as Ti, W, Mo and Cr-Ni ooze or multiple permeation is handled, and workpiece temperature is 950 ℃ (temp measuring systems 12), and the treatment time is 30 minutes, and its infiltration layer all can reach more than the 100 μ m, and alloying element high-content in top layer can reach more than 80%.
Present technique can be made arc source target and auxiliary source electrode to the combination of the metallic element of any metallic element or metalloid element or its arbitrary proportion, infiltrate the top layer of any electro-conductive material, form pure metal, alloyed layer, plating key coat and compound cementation coating.Both can ooze, also can plate or the plating combination, be fit to the surface modification purpose that various materials or part require.
The present invention is provided with auxiliary source electrode as the second source of desiring the metallic cementation element, and it has good diffraction, and set cathode arc source is as the main source of desiring the metallic cementation element, though its diffraction is poor, ionization is from height, and metallics density is big, the energy height, and infiltration rate is fast.The arc spot that produces after the cathode arc source striking is chaotic simultaneously constantly moves at target material surface, because negative electrode water-cooled, be difficult for forming thin-skinnedization of metallic target and fusing like this, can settle in the bonnet optional position, adding workpiece at the uniform velocity rotates with cathode base, the synthesis result of above-mentioned feature makes this device can handle all kinds of parts of complex-shaped endoporus, concave surface and big area, obtains uniform cementation coating.As titanium, aluminium, chromium, nickel, tungsten, molybdenum, vanadium, niobium, tantalum etc., and different ratios between them, the alloyed layer of various combination or cementation coating and with the chemical combination cementation coating of carbon, nitrogen, oxygen.
Arc-added glow ion implantation technique of the present invention, equipment is simple, and is easy to operate, and metallic cementation speed height, infiltration level structure and composition are easy to control, are applicable to various material and parts, various metallic elements of plating and metalloid element.Easily realize suitability for industrialized production, to anti-corrosion, wear-resisting, thermotolerance and other modification that improve material or piece surface and improve workpiece life-span etc. fairly obvious effect, remarkable in economical benefits are arranged.
The present invention has very wide application prospect applicable to every field such as machinery, chemical industry, communications and transportation, Aeronautics and Astronautics.

Claims (3)

1, a kind of device of arc-added glow ion implantation, it is characterized in that this device is by sealed vessel, negative electrode, arc target source, auxiliary source electrode, compositions such as adjustable direct supply, sealed vessel vacuum-pumping and energy fill gas body medium, but the negative electrode place work piece also can rotate, different azimuth is provided with one or more arc target sources as infiltration element master supply source on bonnet, around workpiece, be provided as the auxiliary source electrode of heating source and infiltration element second source simultaneously, between as the bonnet of common anode and auxiliary source electrode and between bonnet and negative electrode, be connected a continuously adjustable direct supply 0-2000V respectively, between auxiliary source electrode and the negative electrode, it can be also equi-potential not of equi-potential, be connected adjustable power of direct current 0-100V, 0-200A between bonnet and arc target source.
2, the device of arc-added glow ion implantation according to claim 1, wherein the final vacuum that vacuum vessel reached is not less than 1 * 10 -2Pa, charging into gas is rare gas element Ar gas when metallic cementation, when forming the compound cementation coating of carbon, nitrogen, oxygen, charges into carburetted hydrogen gas CH 4, N 2And O 2Gas, operating air pressure scope are 5 * 10 -1-50Pa.
3, arc target source that the device of arc-added glow ion implantation according to claim 1, wherein said infiltration element are made and auxiliary source electrode can be made by the composition of the metallic element of any metallic element or metalloid element or its any ratio.
CN 90103841 1990-06-01 1990-06-01 Arc-glowing ionized metal infusion process and its equipment Expired - Fee Related CN1028546C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 90103841 CN1028546C (en) 1990-06-01 1990-06-01 Arc-glowing ionized metal infusion process and its equipment

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Application Number Priority Date Filing Date Title
CN 90103841 CN1028546C (en) 1990-06-01 1990-06-01 Arc-glowing ionized metal infusion process and its equipment

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CN1057073A CN1057073A (en) 1991-12-18
CN1028546C true CN1028546C (en) 1995-05-24

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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1058301C (en) * 1995-06-08 2000-11-08 大连海事大学 Ion-sputtering metallic cementation technology
CN102703864B (en) * 2012-05-31 2013-09-18 太原理工大学 Method for performing arc-added glow discharge ion diffusion coating on magnesium alloy plate
CN104055586B (en) * 2014-06-24 2017-01-25 丹阳纳瑞康纳米科技有限公司 Metal wire for embedding fine silver particles and preparation
CN105908119A (en) * 2016-04-23 2016-08-31 上海大学 Surface oxidation treatment method of aluminum alloy extrusion die
CN108581057B (en) * 2018-05-04 2020-02-11 山东大学 Surface alloying weakening treatment auxiliary processing method for efficient cutting of difficult-to-process material
CN109797363B (en) * 2019-02-21 2021-10-19 广东汇成真空科技股份有限公司 Arc light electron source assisted ion nitriding process
CN109913799B (en) * 2019-02-21 2021-10-19 广东汇成真空科技股份有限公司 Arc electron source enhanced glow discharge surface activation process for PVD (physical vapor deposition) coating
CN111320778A (en) * 2020-02-25 2020-06-23 深圳赛兰仕科创有限公司 PTFE membrane surface treatment method and PTFE membrane surface treatment system
CN111519150B (en) * 2020-05-29 2022-05-17 太原理工大学 Preparation method of binary or multi-component alloy layer
CN114481009B (en) * 2022-02-14 2024-04-30 四川中科海科技有限责任公司 Anode high-pressure low-temperature nitriding device
CN114737158B (en) * 2022-04-08 2023-12-01 三一重机有限公司 Preparation method of high-entropy alloy coating for surface strengthening of working machine

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