CN1970828B - Method for forming multilayer coating on die - Google Patents

Method for forming multilayer coating on die Download PDF

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Publication number
CN1970828B
CN1970828B CN200510101808A CN200510101808A CN1970828B CN 1970828 B CN1970828 B CN 1970828B CN 200510101808 A CN200510101808 A CN 200510101808A CN 200510101808 A CN200510101808 A CN 200510101808A CN 1970828 B CN1970828 B CN 1970828B
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sputter
hydrogen
carbon
target
mould
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CN200510101808A
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CN1970828A (en
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陈杰良
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Abstract

The invention discloses a forming device and method of multi-film on the mould, which comprises the following layers: transition layer through AC magnetic control sputtering method, nitrogen diamond carbon layer, nitrogen-hydrogen diamond carbon layer, hydrogen diamond carbon layer, nanometer adhesive layer and nanometer middle layer.

Description

On mould, form the method for multicoating
[technical field]
The present invention relates to a kind of method that on mould, forms multicoating.
[background technology]
Mould, essential by carrying out scale operation on the industry, to consider from cost, a mold may require its work hundreds of thousands of time and the distortion of the craftmanship that can not make a difference.The main factor of die deformation comprises wearing and tearing and corrosion, and therefore for prolonging die life, the protection against corrosion of mould, wear-resisting wiping problem seem particularly important.
So general mould adopts hardness height, alloy material that chemical stability is strong more, but its performance is still undesirable.There is friction during mold work and between the workpiece, die wear after the multi-pass operations, the finished product size can not meet the demands, so mould need be than high-wear resistance.When operating environment more abominable, magnesium alloy pressure-casting mould for example, the corrosion that must can bear molten state magnesium, require mould to have high resistance to corrosion this moment.
(Diamond-Like Carbon DLC) has and the similar character of diamond, as high rigidity diamond-like carbon; low frictional factor, high chemical stability, so industry is with the protective membrane of DLC film as die surface; it has anti-damage, and the is anticorrosive good characteristic of Denging.This kind DLC film is generally individual layer, adopts the direct magnetic control sputtering method to make, and still, the mould that comprises individual layer DLC film is after multi-pass operations, and the DLC film is easy to come off from mold base.
[summary of the invention]
In view of this, be necessary to provide a kind of rete difficult drop-off that forms on mould, frictional coefficient is low, and wear resisting property is good, the method for the plated film that erosion resistance is strong.
A kind of method that on mould, forms multicoating, it may further comprise the steps: a substrate is provided; Use the tie coat target, adopt AC magnetic controlled sputtering method sputter one nanometer tie coat on this substrate surface; Use the middle layer target, adopt AC magnetic controlled sputtering method sputter one nanometer middle layer on this nanometer tie coat surface; Use carbon containing target and nitrogenous sputter gas, adopt AC magnetic controlled sputtering method sputter one nitrogenous quasi-diamond carbon-coating on this middle layer; Use the carbon containing target and comprise nitrogen and the sputter gas of hydrogen-containing gas, adopt AC magnetic controlled sputtering method sputter one nitrogenous hydrogen diamond carbon-coating on this nitrogenous quasi-diamond carbon-coating; Reach the sputter gas that uses the carbon containing target and comprise hydrogen-containing gas, adopt AC magnetic controlled sputtering method sputter one on this nitrogenous hydrogen diamond carbon-coating to contain the hydrogen diamond layer.
With respect to prior art, the mould coating of present embodiment gained has following advantage: at first, owing to have a nanometer tie coat, whole rete is not easy to come off from substrate; Secondly, nitrogenous quasi-diamond carbon-coating has excellent mechanical properties and chemical stability; Once more, hydrogeneous diamond-like carbon laminar surface frictional coefficient is low, and wear resisting property is good.Adopt and hand over the magnetic control sputtering plating mode to prepare, rare gas element ionization level height, the rete that is plated has more excellent performance.
[description of drawings]
Fig. 1 is the mould and the surface coating structural representation of the method gained of present embodiment.
Fig. 2 is the device synoptic diagram that present embodiment forms multicoating.
Fig. 3 is the method flow diagram that present embodiment forms multicoating.
[embodiment]
Below in conjunction with drawings and Examples above-mentioned preparation method with mould of multicoating is described further.
Consult Fig. 1, the mould with multicoating 100 that present embodiment is prepared comprises a substrate 10 and is formed on a transition layer 11 in this substrate 10 successively, one nitrogenous quasi-diamond carbon-coating 12, an one nitrogenous hydrogen diamond carbon-coating 13 and a hydrogeneous quasi-diamond carbon-coating 14, transition layer 11 comprises a nanometer tie coat 111 and a nanometer middle layer 112.
The material of this substrate 10 can be siderochrome carbon alloy, siderochrome molybdenum carbon alloy, siderochrome vanadium molybdenum carbon alloy or siderochrome vanadium silicon molybdenum carbon alloy.
Nanometer tie coat 111 is formed on the substrate 10, and it is made of nanoparticle, and its material can be selected from chromium, titanium or chromium titanide, and its thickness is 1~20 nanometer, preferred 4~10 nanometers.
Nanometer middle layer 112, it is made of nanoparticle, and its material can be selected from nitrogen chromium, titanium nitride or its mixture, and basic thickness is 1~50 nanometer, preferred 4~30 nanometers.
Consult Fig. 2, the preparation facilities 200 of one multicoating at first is provided, it comprises a sputtering system and a transfer system 26, sputtering system comprises one first vacuum chamber 211 of preface setting successively, one second vacuum chamber 212, one the 3rd vacuum chamber 213, one the 4th vacuum chamber 214 and one the 5th vacuum chamber 215, and be set in turn in a transition layer sputter chamber 221 between adjacent two vacuum chambers, one nitrogenous diamond-like carbon sputter chamber 222, one nitrogenous hydrogen diamond carbon sputter chamber 223, realize being communicated with and closure with valve between the one hydrogeneous diamond-like carbon sputter chamber 224, vacuum chamber and sputter chamber.For example transition layer sputter chamber 221 is arranged between first vacuum chamber 211 and second vacuum chamber 212, and nitrogenous diamond-like carbon sputter chamber 222 is arranged between second vacuum chamber 212 and the 3rd vacuum chamber 213, by that analogy.All vacuum chambers and sputter chamber all are connected with vacuum pump 27.
Be provided with tie coat target 231 and middle layer target 232 in the transition layer sputter chamber 221, replaceable target during sputter, with the film of sputter unlike material, for example, block and do not think that sedimentary target can realize the selection of target to be arranged at baffle plate 2211 in the transition layer sputter chamber 221.Tie coat target 231 can be chromium, titanium or chromium titanide, and middle layer target 232 can be chromium nitride, titanium nitride or its mixture.Nitrogenous diamond-like carbon sputter chamber 222 is provided with the carbon containing target in nitrogenous hydrogen diamond carbon sputter chamber 223 and the hydrogeneous diamond-like carbon sputter chamber 224, and it can be graphite or carbon.
Include rare gas element in all sputter chambeies, this rare gas element can be argon gas or krypton gas.Further, comprise nitrogen in the nitrogenous diamond-like carbon sputter chamber 222, preferred, the volumn concentration of nitrogen is 2~40%; Comprise nitrogen and hydrogen-containing gas in the nitrogenous hydrogen diamond carbon sputter chamber 223, preferred, the volumn concentration of nitrogen is 2~10%, and hydrogen-containing gas can be hydrogen, methane or ethane, and its volumn concentration is 5~15%; Comprise hydrogen-containing gas in the hydrogeneous diamond-like carbon sputter chamber 224, preferred, the volumn concentration 5~20% of hydrogen-containing gas.Preferably, the gaseous tension in each sputter chamber is smaller or equal to 10 pascals (Pa).
Transfer system 26 is used for the carrier 25 that carries plated film substrate 10 to be prepared is sent into first vacuum chamber 211, and is delivered to successively each sputter chamber from first vacuum chamber 211, takes sputtering system at last out of.In this example, transfer system 26 comprise a plurality of can be to the roller bearing 261 of equidirectional rotation, transfer system also can be travelling belt.
When transfer system 26 is delivered to substrate 10 in the sputter chamber, be negative electrode with the target, be anode with substrate 10, between target and substrate 10, apply hundreds of extremely high voltage of alternating current of thousands of volts, ac frequency can be 20~800 kilohertzs.The ionized inert gas in sputter chamber under high-voltage, form the electricity slurry, positive ion is to target accelerated motion, via momentum transfer the target atom bombardment is penetrated, be deposited in the substrate 10, speed by control transfer system 26 can change the residence time of substrate 10 in the sputter chamber, and then changes the film thickness that is deposited on substrate 10 surfaces.
Below describe the working process of the preparation facilities 200 of the multilayer film that uses present embodiment in detail.Start transfer system 26, open inlet valve 2111, substrate to be coated 10 is placed on the carrier 25, close inlet valve 2111, and first vacuum chamber 211 vacuumized, open valve 2112, carrier 25 and substrate 10 are sent in the transition layer sputter chamber 221, valve-off 2112, apply voltage of alternating current in substrate 10 and 231 of tie coat targets, carry out sputter, behind the intact nanometer tie coat 111 of sputter, changing target is the middle layer target, sputter nanometer middle 112.And this is simultaneously, can place again and repeat aforementioned operation in another substrate to the first vacuum chamber 211, but so this device continuous production.The adjustable-speed joint of regulating transfer system 26 obtains the thickness of plated film.Substrate 10 during sputter, vacuumizes second vacuum chamber 212, after sputter is finished in transition layer sputter chamber 221, open valve 2121, carrier 25 and substrate 10 enter second vacuum chamber 212, and be after this similar with aforementioned process, but need not to change target in the sputter process after this, all films on sputter.
See also Fig. 3, be example with the preparation facilities 200 that uses multicoating, a kind of method that forms multicoating on mould is described, this method may further comprise the steps:
Step 1 provides a substrate 10.The material of substrate 10 can be siderochrome carbon alloy, siderochrome molybdenum carbon alloy, siderochrome vanadium molybdenum carbon alloy or siderochrome vanadium silicon molybdenum carbon alloy, and is preferred, uses mirror polish that substrate 10 is polished to average surface roughness (Ra) smaller or equal to 10 nanometers.
Step 2 is used tie coat target 231, adopts AC magnetic controlled sputtering method in this substrate surface sputter one nanometer tie coat 111. nanometer middle layers 111 thickness, 1~20 nanometer, preferred 4~10 nanometers.
Sputter carries out in transition layer sputter chamber 221, be negative electrode with tie coat target 231 during sputter, substrate 10 is an anode, apply hundreds of high voltage of alternating current to thousands of volts to produce glow discharge, ionized inert gas in the transition layer sputter chamber 221 forms plasma body, and positive ion is to target accelerated motion, via momentum transfer the target atom bombardment is penetrated, be deposited in the substrate 10.By the control sputter time, can change the film thickness that is deposited on substrate 10 surfaces.
Step 3 is used middle layer target 232, adopts AC magnetic controlled sputtering method sputter one nanometer middle layer 112. on this nanometer tie coat 111
This step can be carried out in transition layer sputter 221 equally, the target in the transition layer sputter chamber 221 is replaced by middle layer target 232 gets final product.Nanometer middle layer 112 thickness are 1~50 nanometer, are preferably 4~30 nanometers.Substrate 10 entered nitrogenous diamond-like carbon sputter chamber 222. through second vacuum chamber 212 after sputter was finished
Step 4 is used carbon containing target 233 and nitrogenous sputter gas, adopts AC magnetic controlled sputtering method sputter one nitrogenous quasi-diamond carbon-coating 12 on this nanometer middle layer 112, and carbon containing target 233 is graphite or carbon.Nitrogenous quasi-diamond carbon-coating 12 thickness are 1~50 nanometer, are preferably 10~30 nanometers.
This step is carried out in nitrogenous diamond-like carbon sputter chamber 222, is different from the sputter process in the step 2, also comprises nitrogen in the nitrogenous diamond-like carbon sputter chamber 222 except that rare gas element, and preferred, the volumn concentration of nitrogen is 2~40%.The part positive ion bombardment nitrogen molecule that produces after the rare gas element glow discharge, the nitrogen molecule disassociation forms nitrogen-atoms or nitrogen ion, is deposited on the nanometer middle layer 112 with the target atom of bombarding from target, and form chemical bond each other, form nitrogenous quasi-diamond carbon-coating 12.Substrate 10 entered nitrogenous hydrogen diamond carbon sputter chamber 223 through the 3rd vacuum chamber 213 after sputter was finished.
Step 5 is used carbon containing target 233 and is comprised the sputter gas of nitrogen and hydrogen-containing gas, adopts AC magnetic controlled sputtering method sputter one nitrogenous hydrogen diamond carbon-coating 13. on this nitrogenous quasi-diamond carbon-coating 12
Nitrogenous hydrogen diamond carbon-coating 13 thickness are 1~50 nanometer, are preferably 10~30 nanometers.With similar in the step 4, but also comprise hydrogen-containing gas in the nitrogenous hydrogen diamond carbon sputter chamber 223, hydrogen-containing gas can be selected from hydrogen, methane or ethane, and its volumn concentration is 5~20%.Also comprise hydrogen atom in the final prepared nitrogenous hydrogen diamond carbon-coating 13.Substrate 10 entered hydrogeneous diamond-like carbon sputter chamber 224 through the 4th vacuum chamber 214 after sputter was finished.
Step 6 is used carbon containing target 233 and is comprised the sputter gas of hydrogen-containing gas, adopts AC magnetic controlled sputtering method sputter one hydrogeneous quasi-diamond carbon-coating 14 on this nitrogenous hydrogen diamond carbon-coating 13.
Hydrogeneous diamond-like carbon layer thickness is 1~50 nanometer, is preferably 10~30 nanometers, comprises hydrogen-containing gas in the sputter gas that uses during sputter, and hydrogen-containing gas can be hydrogen, methane or ethane, and its volumn concentration is 5~20%.
Through above-mentioned processing procedure, finally mention and be formed with nanometer tie coat 11, nanometer middle layer 112, nitrogenous quasi-diamond carbon-coating 12, nitrogenous hydrogen in the substrate 10 for boring the mould 100 of carbon-coating 13 and hydrogeneous quasi-diamond carbon-coating 14.
The mould with multicoating 100 of present embodiment gained, its advantage are that at first, owing to have a nanometer tie coat 111, whole rete is not easy to come off from substrate 10; Secondly, nitrogenous quasi-diamond carbon-coating has excellent mechanical properties and chemical stability; Once more, hydrogeneous diamond-like carbon laminar surface frictional coefficient is low, and wear resisting property is good.The discharge of employing exchange way, rare gas element ionization level height, the rete that is plated has more excellent performance.
In addition, those skilled in the art also can do other variation in spirit of the present invention.Certainly, the variation that these are done according to spirit of the present invention all should be included within the present invention's scope required for protection.

Claims (8)

1. method that on mould, forms multicoating, it may further comprise the steps:
One substrate is provided;
Use the tie coat target, adopt AC magnetic controlled sputtering method sputter one nanometer tie coat on this substrate surface;
Use the middle layer target, adopt AC magnetic controlled sputtering method sputter one nanometer middle layer on this nanometer tie coat surface;
Use carbon target and nitrogenous sputter gas, adopt AC magnetic controlled sputtering method sputter one nitrogenous quasi-diamond carbon-coating on this middle layer;
Use the carbon target and comprise nitrogen and the sputter gas of hydrogen-containing gas, adopt AC magnetic controlled sputtering method sputter one nitrogenous hydrogen diamond carbon-coating on this nitrogenous quasi-diamond carbon-coating; And
Use the carbon target and comprise the sputter gas of hydrogen-containing gas, adopt AC magnetic controlled sputtering method sputter one on this nitrogenous hydrogen diamond carbon-coating to contain the hydrogen diamond layer.
2. as claim 1 a described method that on mould, forms multicoating, it is characterized in that described carbon target is a graphite.
3. as claim 1 a described method that on mould, forms multicoating, it is characterized in that described tie coat target is chromium, titanium or chromium titanide.
4. as claim 1 a described method that on mould, forms multicoating, it is characterized in that described middle layer target is chromium nitride, titanium nitride or its mixture.
5. as claim 1 a described method that on mould, forms multicoating, it is characterized in that the volumn concentration of nitrogen in the described nitrogenous sputter gas is 2~40%.
6. as the described method that on mould, forms multicoating of claim 1, it is characterized in that the volumn concentration of nitrogen in the described sputter gas that comprises nitrogen and hydrogen-containing gas is 2~10%, the hydrogen-containing gas volumn concentration is 5~15%.
7. as the described method that on mould, forms multicoating of claim 1, it is characterized in that the percentage composition of hydrogen-containing gas in the described sputter gas that comprises hydrogen-containing gas is 5~20%.
8. as claim 1 a described method that on mould, forms multicoating, it is characterized in that described hydrogen-containing gas can be hydrogen, methane or ethane.
CN200510101808A 2005-11-26 2005-11-26 Method for forming multilayer coating on die Expired - Fee Related CN1970828B (en)

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Publication number Priority date Publication date Assignee Title
CN104651798B (en) * 2015-02-15 2017-05-10 凌嘉科技股份有限公司 Volume production method for multilayer film
CN105420673A (en) * 2015-12-09 2016-03-23 上海应用技术学院 Diamond-like micro-nano coating for rubber mold and preparation method
CN107099781A (en) * 2017-04-20 2017-08-29 邵海平 A kind of filming equipment and film plating process
JPWO2019039070A1 (en) * 2017-08-22 2020-04-16 株式会社アルバック Deposition method

Citations (8)

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Publication number Priority date Publication date Assignee Title
US5110676A (en) * 1989-07-07 1992-05-05 Matsushita Electric Industrial Co., Ltd. Magnetic recording medium incorporating metallic magnetic thin film
US5837357A (en) * 1995-11-06 1998-11-17 Fuji Electric Co., Ltd. Magnetic recording medium having a carbon protective layer and method for manufacturing the same
CN1279728A (en) * 1997-12-03 2001-01-10 联合莫古尔威斯巴登有限公司 Device for vacuum coating slide bearings
CN1316543A (en) * 2000-03-31 2001-10-10 株式会社小糸制作所 Linear film forming method and reflector formed by it
CN1338531A (en) * 2000-08-18 2002-03-06 深圳威士达真空系统工程有限公司 Technological arrangement of continuous in-line plating equipment for multi-layer film
CN1138020C (en) * 1999-09-29 2004-02-11 永源科技股份有限公司 Evaporation coating process with cathode arc for depositing diamond-like carbon film
CN1650416A (en) * 2002-05-23 2005-08-03 安内华株式会社 Substrate processing device and substrate processing method
CN1657647A (en) * 2004-02-21 2005-08-24 应用薄膜有限公司 Method for operating an in-line coating installation

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5110676A (en) * 1989-07-07 1992-05-05 Matsushita Electric Industrial Co., Ltd. Magnetic recording medium incorporating metallic magnetic thin film
US5837357A (en) * 1995-11-06 1998-11-17 Fuji Electric Co., Ltd. Magnetic recording medium having a carbon protective layer and method for manufacturing the same
CN1279728A (en) * 1997-12-03 2001-01-10 联合莫古尔威斯巴登有限公司 Device for vacuum coating slide bearings
CN1138020C (en) * 1999-09-29 2004-02-11 永源科技股份有限公司 Evaporation coating process with cathode arc for depositing diamond-like carbon film
CN1316543A (en) * 2000-03-31 2001-10-10 株式会社小糸制作所 Linear film forming method and reflector formed by it
CN1338531A (en) * 2000-08-18 2002-03-06 深圳威士达真空系统工程有限公司 Technological arrangement of continuous in-line plating equipment for multi-layer film
CN1650416A (en) * 2002-05-23 2005-08-03 安内华株式会社 Substrate processing device and substrate processing method
CN1657647A (en) * 2004-02-21 2005-08-24 应用薄膜有限公司 Method for operating an in-line coating installation

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