CN107988579A - A kind of ion beam sputtering assisted deposition machine - Google Patents
A kind of ion beam sputtering assisted deposition machine Download PDFInfo
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- CN107988579A CN107988579A CN201711160242.7A CN201711160242A CN107988579A CN 107988579 A CN107988579 A CN 107988579A CN 201711160242 A CN201711160242 A CN 201711160242A CN 107988579 A CN107988579 A CN 107988579A
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- vacuum chamber
- filament
- ion source
- cathode
- neutralization device
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/3442—Applying energy to the substrate during sputtering using an ion beam
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention relates to a kind of ion beam sputtering assisted deposition machine, including vacuum chamber, a main ion source and neutralization device；The side of the vacuum chamber sets the main ion source；The main ion source is made of cathode filament, and the cathode filament is φ 0.2 and is wound in spring shape, a diameter of 1.0mm, the circle of winding 5 10；The neutralization device is installed on the vacuum chamber and the close vacuum chamber madial wall in the main ion source；It is equipped with the neutralization device and neutralizes filament.The embodiment of the present invention is by changing main ion source filamentray structure, it with the addition of neutralization device, improve the operating time of ion beam sputtering assisted deposition machine, greatly improve work efficiency, and the thickness for the film that can be plated increases to more than ten microns, and it ensure that film will not produce stress and cause film separation because of the increase of thickness.
Description
Technical field
The present invention relates to electric mechanical technical field, more particularly to a kind of ion beam sputtering assisted deposition machine.
Background technology
Vacuum coating has considerable effect, various high-accuracy devices, optics member in modern social development field
Part etc. has vacuum coating a great demand, and double ion beam sputtered assisted deposition machine, can meet the plated film of some devices
Demand, and the working time of most of ion beam depositions is shorter, it is difficult to meet that some have the device of very big demand for thickness
Part.
The content of the invention
In view of the above problems, it is proposed that the present invention overcomes the above problem in order to provide one kind or solves at least in part
State a kind of ion beam sputtering assisted deposition machine of problem.
The embodiment of the present invention provides a kind of ion beam sputtering assisted deposition machine, including including vacuum chamber, a main ion
Source and neutralization device；
The side of the vacuum chamber sets the main ion source；
The main ion source is made of cathode filament, and the cathode filament is φ 0.2 and is wound in spring shape, winds 5-
10 circles, a diameter of 1.0mm；
The neutralization device is installed on the vacuum chamber and the close vacuum chamber madial wall in the main ion source；
It is equipped with the neutralization device and neutralizes filament.
In one embodiment, the neutralization device further includes：Shell, bias supply, anode supply and cathode power；
The shell is equipped with passage；
The plus earth of the bias supply, anode are connected with the cathode of the anode supply；
The cathode of the anode supply and the cage connection, anode are connected with the middle section position of the neutralization filament；
The both ends of the cathode power connect the both ends of the neutralization filament respectively；The neutralization filament is in spring-like.
In one embodiment, circular lid is equipped with the top of the vacuum chamber, the circular lid is equipped with four seal pipes
Road and two snorkels, circuit built in four sealings pipeline difference, are connected with the neutralization device；
Described two snorkels wherein all the way snorkel with it is described neutralization device be connected, another way flue port setting
In the vacuum chamber inner top.
In one embodiment, further include：One auxiliary ion gun；
The auxiliary ion gun is arranged on the opposite side of the vacuum chamber；
The auxiliary ion gun includes cathode filament and one neutralizes filament, and the cathode filament is φ 0.2 and is wound in bullet
Spring shape, winding 5-10 circles, a diameter of 1.0mm；
It is φ 0.2 that the one, which neutralizes filament, in linear.
In one embodiment, further include：Sputtering target platform, rotary sample platform, gate valve, molecular pump, mechanical pump and first
Cooling-water machine and the second cooling-water machine；
The sputtering target platform be installed on the vacuum chamber in away from it is described neutralization device position, and with the main ion
Source is horizontal opposite；
The rotary sample platform be installed on the vacuum chamber in close to it is described neutralization device superjacent air space, and with it is described
Auxiliary 45 ° of correspondences of ion gun；
The gate valve is installed on below the vacuum chamber, and the molecular pump is installed on below the gate valve；It is described
It is connected above gate valve with below the molecular pump by exhaust tube with the mechanical pump；
The cooling cycle water route of first cooling-water machine is around the molecular pump；
The cooling cycle water route of second cooling-water machine is respectively around the main ion source, the auxiliary ion gun, the sputtering target
Platform and the rotary sample platform.
The beneficial effect of above-mentioned technical proposal provided in an embodiment of the present invention includes at least：
A kind of ion beam sputtering assisted deposition machine provided in an embodiment of the present invention, including including vacuum chamber, a master from
Component and neutralization device；The side of the vacuum chamber sets the main ion source；The main ion source is made of cathode filament,
The cathode filament is φ 0.2 and is wound in spring shape, a diameter of 1.0mm, winding 5-10 circles；The neutralization device is installed on
On the vacuum chamber and the close vacuum chamber madial wall in the main ion source；It is equipped with the neutralization device and neutralizes filament.
The embodiment of the present invention with the addition of neutralization device, improve ion beam sputtering assisted deposition by changing main ion source filamentray structure
The operating time of machine, greatly improves work efficiency, and the thickness for the film that can be plated increases to more than ten microns, and ensures
Film will not produce stress and cause film separation because of the increase of thickness.
Other features and advantages of the present invention will be illustrated in the following description, also, partly becomes from specification
Obtain it is clear that or being understood by implementing the present invention.The purpose of the present invention and other advantages can be by the explanations write
Specifically noted structure is realized and obtained in book, claims and attached drawing.
Below by drawings and examples, technical scheme is described in further detail.
Brief description of the drawings
Attached drawing is used for providing a further understanding of the present invention, and a part for constitution instruction, the reality with the present invention
Apply example to be used to explain the present invention together, be not construed as limiting the invention.In the accompanying drawings：
Fig. 1 is ion beam sputtering assisted deposition machine structure diagram provided in an embodiment of the present invention；
Fig. 2 is neutralization apparatus structure schematic diagram provided in an embodiment of the present invention；
Fig. 3 is vacuum chamber left view schematic diagram provided in an embodiment of the present invention.
Wherein：1- vacuum chambers, 2- main ions source, 21- main ions source grid region, in 3- and device, in 31- and filament, 32-
Shell, 33- bias supplies, 34- anode supplies, 35- cathode powers, 36- passages, the auxiliary ion guns of 4-, 5- sputtering target platforms, 6- samples
Turntable, 7- gate valves, 8- molecular pumps, 9- mechanical pumps, 91- exhaust tubes, the first cooling-water machines of 10-, the first cooling-water machines of 101- go out
Water pipe, the water inlet pipe of the first cooling-water machines of 102-, the second cooling-water machines of 11-, the outlet pipe of the second cooling-water machines of 111-, the second cold water of 112-
The water inlet pipe of machine, 12- sample baffles.
Embodiment
Here exemplary embodiment will be illustrated in detail, its example is illustrated in the accompanying drawings.Following description is related to
During attached drawing, unless otherwise indicated, the same numbers in different attached drawings represent the same or similar key element.Following exemplary embodiment
Described in embodiment do not represent and the consistent all embodiments of the present invention.On the contrary, they be only with it is such as appended
The example of the consistent apparatus and method of some aspects being described in detail in claims, of the invention.
An embodiment of the present invention provides a kind of ion beam sputtering assisted deposition machine, with reference to shown in Fig. 1, including vacuum chamber 1,
One main ion source 2 and neutralization device 3, wherein the side of vacuum chamber 1 sets main ion source 2, for example may be mounted at vacuum
The right side of chamber 1；
In the prior art, main ion source is made of cathode filament and neutralization filament；In the present embodiment, without using main ion
The neutralization filament that source 2 carries, is pulled down；And cathode filament is changed to the filament of φ 0.2, i.e. filament in itself a diameter of
0.2mm, and spring shape is wound in, winding 5-10 circles, a diameter of 1.0mm, specifically, can wind 7 circles.Increase neutralizes device
3, with reference to shown in Fig. 2, which is installed on vacuum chamber 1 and close 1 madial wall of vacuum chamber in main ion source 2, in
Filament 31 is neutralized with being equipped with device 3, the specification and shape of the neutralization filament are not limited in the present embodiment.
By changing main ion source filamentray structure and equipped with device is neutralized, it is auxiliary ion beam sputtering can be improved in the present embodiment
The operating time of coating machine is helped, is greatly improved work efficiency, and the thickness for the film that can be plated increases to more than ten microns, and
And it ensure that film will not produce stress and cause film separation because of the increase of thickness.
Further, with reference to shown in Fig. 2, above-mentioned neutralization device 3 further includes shell 32, bias supply 33, anode supply 34
With cathode power 35；Passage 36 is equipped with shell 32, is used as the passage use for neutralizing device line.
Wherein：The plus earth of bias supply 33, anode are connected with the cathode of anode supply 34；Anode supply 34 is just
Pole is connected with shell 32, and anode is connected with neutralizing the middle section position of filament 31；
The both ends of cathode power 35 connect the both ends for neutralizing filament 31 respectively, and it is in spring-like to neutralize filament 31.
In the present embodiment, the concrete structure of device is neutralized, the neutralization filament in main ion source can be replaced, and can be made whole
The working time of ion beam sputtering assisted deposition machine extends, such as can be by increasing to 50 when operating time 20 is small in the prior art
Hour, greatly improve work efficiency, and then the thickness of plated film can be increased to more than 10 microns, and be unlikely to be peel off.
In one embodiment, with reference to shown in Fig. 1, the top of vacuum chamber 1 is equipped with circular lid, and four are equipped with circular lid
Pipeline and two snorkels are sealed, wherein circuit built in four sealing pipelines difference, is connected with the neutralization device 3, is used for
The cathode of connection neutralization device+, cathode-, anode+, anode-.
Two snorkels, wherein snorkel is argon Ar all the way, are connected with neutralizing device 3；Another way snorkel, is nitrogen
Pipe, nitrogen tube are arranged on 1 inner top of vacuum chamber, its port extends into vacuum chamber 1.
Further, with reference to shown in Fig. 1, the ion beam sputtering assisted deposition machine, further includes an auxiliary ion gun 4, sets
In the opposite side of vacuum chamber 1, for example it is installed in the left side of vacuum chamber 1.Wherein auxiliary ion gun 4 include cathode filament and
One neutralizes filament, and cathode filament is identical with the cathode filament in above-mentioned main ion source 2, for φ 0.2 and is wound in spring shape, twines
Enclosed around 5-10, a diameter of 1.0mm, it is preferred that 7 circles can be wound in.One, which neutralizes filament, to be φ 0.2, in linear
.
Specifically, with reference to shown in Fig. 1, further include：Sputtering target platform 5, rotary sample platform 6, gate valve 7, molecular pump 8, machinery
9 and first cooling-water machine 10 of pump and the second cooling-water machine 11；
Sputtering target platform 5 be installed on vacuum chamber 1 in away from it is described neutralization device 3 position, and with 2 horizontal phase of main ion source
It is right；Rotary sample platform 6 is installed on close to the superjacent air space of the neutralization device 3 in the vacuum chamber 1, and outside is additionally provided with sample
Baffle 12, and on auxiliary 4,45 ° of directions of ion gun；Gate valve 7 is installed on the lower section of vacuum chamber 1, and molecular pump 8 is installed on plate
The lower section of valve 7；The top of gate valve 7 is connected with the lower section of molecular pump 8 by exhaust tube 91 with the mechanical pump 9；First cooling-water machine 10
Cooling cycle water route, outlet pipe 101 and water inlet pipe 102, around molecular pump 8；The cooling cycle water route of second cooling-water machine 11, water outlet
Pipe 111 and water inlet pipe 112, respectively around main ion source 2, auxiliary ion gun 4, sputtering target platform 5 and rotary sample platform 6.
With reference to shown in Fig. 3, be vacuum chamber left view, the main ion source grid region 21 shown in figure, glow discharge formation
Argon ion is bombarded onto target by accelerating potential by aperture plate；Ion beam sputtering assisted deposition machine operation provided in this embodiment
Process is as follows：Open main source argon gas switch to switch with main source current, glow discharge is carried out, by the coating machine parameter regulation to work
Required parameter, then opens and neutralizes the independent power switch of device and argon gas switch, and adjustment parameter is corresponding 2 parameter of main ion source；
Auxiliary ion gun 4 is identical with 2 mode of operation of main ion source：Auxiliary ion gun power switch is first turned on, glow discharge is carried out, then adjusts
Energy needed for auxiliary ion gun work is saved, line is with neutralizing line；Without filament is neutralized, auxiliary ion gun is to be provided with main ion source 2
The neutralization filament of one, directly being adjusted in adjustment parameter can be adjusted in auxiliary ion gun 4 and parameter, may finally be significantly
Improve coating machine work time, improve work efficiency.Such as coating machine provided in this embodiment is in the feelings of metallized film
Under condition, can plate 50 it is small when more than, reaching film, more than 10 microns and film surface are bright and to combine power good；And existing skill
General device in art, may only plate several microns, it is more likely that peel off, and during easily occur filament blow situations such as.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
God and scope.In this way, if these modifications and changes of the present invention belongs to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising including these modification and variations.
Claims (5)
- A kind of 1. ion beam sputtering assisted deposition machine, it is characterised in that including vacuum chamber (1), a main ion source (2) and in With device (3)；The side of the vacuum chamber (1) sets the main ion source (2)；The main ion source (2) is made of cathode filament, and the cathode filament is φ 0.2 and is wound in spring shape, winds 5- 10 circles, a diameter of 1.0mm；It is interior with the close vacuum chamber (1) of the main ion source (2) that the neutralization device (3) is installed on the vacuum chamber (1) On side wall；It is equipped with the neutralization device (3) and neutralizes filament (31).
- 2. a kind of ion beam sputtering assisted deposition machine as claimed in claim 1, it is characterised in that the neutralization device (3) is also Including：Shell (32), bias supply (33), anode supply (34) and cathode power (35)；The shell (32) is equipped with passage (36)；The plus earth of the bias supply (33), anode are connected with the cathode of the anode supply (34)；The cathode of the anode supply (34) is connected with the shell (32), anode and the middle section position of the neutralization filament (31) Connection；The both ends of the cathode power (35) connect the both ends of the neutralization filament (31) respectively；The neutralization filament (31) is in bullet Spring shape.
- A kind of 3. ion beam sputtering assisted deposition machine as claimed in claim 1, it is characterised in that vacuum chamber (1) top Portion is equipped with circular lid, and the circular lid is equipped with four sealing pipelines and two snorkels, four sealings pipeline difference Built-in circuit, is connected with the neutralization device (3)；Described two snorkels wherein all the way snorkel with it is described neutralization device (3) be connected, another way flue port setting In the vacuum chamber (1) inner top.
- 4. such as a kind of ion beam sputtering assisted deposition machine of claim 1-3 any one of them, it is characterised in that further include：One A auxiliary ion gun (4)；The auxiliary ion gun (4) is arranged on the opposite side of the vacuum chamber (1)；The auxiliary ion gun (4) includes cathode filament and one neutralizes filament, and the cathode filament is φ 0.2 and is wound in spring Shape, winding 5-10 circles, a diameter of 1.0mm；It is φ 0.2 that the one, which neutralizes filament, in linear.
- 5. a kind of ion beam sputtering assisted deposition machine as claimed in claim 4, it is characterised in that further include：Sputtering target platform (5), rotary sample platform (6), gate valve (7), molecular pump (8), mechanical pump (9) and the first cooling-water machine (10) and the second cooling-water machine (11)；The sputtering target platform (5) be installed on the vacuum chamber (1) in away from it is described neutralization device (3) position, and with it is described Main ion source (2) is horizontal opposite；The rotary sample platform (6) is installed on close to the superjacent air space of the neutralization device (3) in the vacuum chamber (1), and It is corresponding with auxiliary (4) 45 ° of the ion gun；The gate valve (7) is installed on below the vacuum chamber (1), and the molecular pump (8) is installed under the gate valve (7) Side；It is connected above the gate valve (7) with below the molecular pump (8) by exhaust tube with the mechanical pump (9)；The cooling cycle water route of first cooling-water machine (10) is around the molecular pump (8)；The cooling cycle water route of second cooling-water machine (11) is respectively around the main ion source (2), the auxiliary ion gun (4), described Sputtering target platform (5) and the rotary sample platform (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711160242.7A CN107988579B (en) | 2017-11-20 | 2017-11-20 | A kind of ion beam sputtering assisted deposition machine |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711160242.7A CN107988579B (en) | 2017-11-20 | 2017-11-20 | A kind of ion beam sputtering assisted deposition machine |
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| CN107988579A true CN107988579A (en) | 2018-05-04 |
| CN107988579B CN107988579B (en) | 2019-12-03 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07157876A (en) * | 1993-12-06 | 1995-06-20 | Hitachi Ltd | Thin film forming device and ion-beam sputtering device |
| CN1459515A (en) * | 2002-05-21 | 2003-12-03 | 雷卫武 | Multiion cluster cosputtering settling nano film apparatus |
| JP2004022260A (en) * | 2002-06-14 | 2004-01-22 | Sony Corp | Feeding method of neutralized filament and ion beam device |
| CN2734774Y (en) * | 2004-07-28 | 2005-10-19 | 雷卫武 | Double-ion-beam co-sputtering deposition atomic-layer nano film device |
| CN1917131A (en) * | 2005-08-18 | 2007-02-21 | 中国科学院半导体研究所 | Filament of neutralization cathode in Kaufman ion source, and method |
-
2017
- 2017-11-20 CN CN201711160242.7A patent/CN107988579B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07157876A (en) * | 1993-12-06 | 1995-06-20 | Hitachi Ltd | Thin film forming device and ion-beam sputtering device |
| CN1459515A (en) * | 2002-05-21 | 2003-12-03 | 雷卫武 | Multiion cluster cosputtering settling nano film apparatus |
| JP2004022260A (en) * | 2002-06-14 | 2004-01-22 | Sony Corp | Feeding method of neutralized filament and ion beam device |
| CN2734774Y (en) * | 2004-07-28 | 2005-10-19 | 雷卫武 | Double-ion-beam co-sputtering deposition atomic-layer nano film device |
| CN1917131A (en) * | 2005-08-18 | 2007-02-21 | 中国科学院半导体研究所 | Filament of neutralization cathode in Kaufman ion source, and method |
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|---|---|
| CN107988579B (en) | 2019-12-03 |
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