CN206089793U - Apparatus for preparing high resistant separates vacuum winding coating of nanometer inorganic non -metallic film - Google Patents
Apparatus for preparing high resistant separates vacuum winding coating of nanometer inorganic non -metallic film Download PDFInfo
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- CN206089793U CN206089793U CN201621165254.XU CN201621165254U CN206089793U CN 206089793 U CN206089793 U CN 206089793U CN 201621165254 U CN201621165254 U CN 201621165254U CN 206089793 U CN206089793 U CN 206089793U
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Abstract
The utility model discloses an apparatus for preparing high resistant separates vacuum winding coating of nanometer inorganic non -metallic film, include: to treat that evaporation material places in the electron gun annular crucible of coating by vaporization device is organized to e type electron gun, set up the department in coiling transmission system's unwinding device with the flexible parent metal to membrane -permeable is accomplished in the membrane route according to convoluteing, to the vacuum regulation and control of coating film room, open coiling transmission system and e type electron gun group coating by vaporization device, treat evaporation material high temperature coating by vaporization to at flexible parent metal surface formation evaporated film, e type electron gun group is formed by at least two e type electron guns combinations, the power of e type electron gun is 1~10kW. The utility model discloses an adopt linear delegation of e type electron gun or the arrangement divergent bundle upright to the dislocation among the vapor deposition process for coating by vaporization speed, improved winding coating's throughput rate, reduced manufacturing cost, the nanometer inorganic non -metallic oxide high resistant that more importantly had obtained excellent performance separates the film.
Description
Technical field
This utility model is related to technical field of vacuum plating, in particular to a kind of high-barrier nano inorganic non-metallic
Thin film, its preparation method and vacuum winding filming equipment.
Background technology
Inorganic non-metallic oxide such as silicon oxide（SiO2）, aluminium oxide（Al2O3）, titanium oxide（TiO2）Deng high as a class
Barrier material, with good barrier property, especially has excellent barrier to oxygen and vapor.It is above-mentioned that these are inorganic
Non pinetallic nano barrier material has more advantage, and such as its use range is wider, goes for cold preservation or directly heats, and
The microwave transparent of this kind of material preferably, can be directly used for microwave heating；Inorganic non-metallic barrier layer has outstanding resistance toization
Medicine is learned, can be used for the packaging of the chemical drugss such as soda acid；Inorganic non-metallic high-isolation film material has the good transparency,
Content is high-visible, product introduction of being more convenient for；And high-barrier inorganic nano material can substitute conventional metallic aluminium barrier layer
Packing film material, reduces the use of metal material, with environment friendly and pollution-free.
The preparation method of the vacuum winding plated film of inorganic non-metallic oxide generally includes following several：Plasma chemistry
Vapour deposition winding film plating, magnetron sputtering coil film coating, high temperature evaporation winding film plating and ald winding film plating etc. wind
Plated film.Plasma activated chemical vapour deposition technique is by organosilane monomers（For example：Hexamethyl disiloxane HMDSO）With oxygen
Gas plasmaassisted effect under, in Plastic film surface cvd silicon oxide barrier layer, and in course of reaction produce by-product
Thing is discharged by vacuum pump.The advantage of the technique is the method for employing chemical vapor deposition, so silicon oxide barrier layer has
Preferable barrier property, and it is strong with the adhesive force of base material.And using intermediate frequency or radio-frequency power supply, produced thermal effect in the technique
Should be relatively low, it is to avoid impact of the high temperature to plastic substrate film.But the technique there is also some defects, such as investment is higher, raw
Product is less efficient, and the speed of winding film plating is about 200m/min, controls in technical process in addition particularly critical, it is desirable to higher.
Mainly using under the action of a magnetic field, Ar ion bom bardment inorganic non-metallics target material surface is generated magnetron sputtering coil film coating
Inorganic Non-metallic Materials are deposited in Plastic film surface, and the major defect of this technique is that sputter rate is relatively low, winding film plating speed
Degree is about target material surface in 5m/min, and technical process and is easily enriched with electronics, causes target material surface to be poisoned, and reduces sputtering strong
Degree, production efficiency is relatively low.
High temperature evaporation winding film plating, with aluminium oxide（Al2O3）As a example by, fed intake by the difference of metal aluminum filament and evaporate aluminum steam,
Reactive deposition process is in metallic aluminium evaporation process, oxygen gas transmission nozzle to be positioned over into evaporation region, and by plasma
Body assistant depositing, finally in plastic film substrate surface deposition of aluminium oxide barrier layer.Winding plating in the reactive evaporation coating process
The speed of film is up to 500m/min, and using metal aluminum filament thermal evaporation and oxygen reaction aluminium oxide is generated, cost of raw material input compared with
Low, barrier film surface will not be presented pale yellow colored appearance, and the higher suitable industrialized production of work efficiency, other techniques that compare set
Standby overall input is relatively low.But thermal evaporation reaction process process is difficult to control to, aluminium oxide barrier layer is intercepted due to its fragility, film layer
Performance is more sensitive to the dilatation of base film, and the barrier property of product is in medium level.
Above-mentioned winding film plating mode has barrier property when the inorganic non-metallic sull of high-barrier is prepared
Difference, the uneven defect such as not fine and close of thin film.Therefore, at present in the urgent need to there is a kind of new winding film plating mode, it can make
It is standby go out the preferable inorganic non-metallic oxide nano-film of barrier property.
Utility model content
This utility model aims to provide a kind of vacuum winding filming equipment for preparing high-barrier nano inorganic non-metallic thin film,
It is only the electron beam vacuum winding evaporation obtained using the combination of multiple stage e type electron gun, it is possible to prepared with excellent resistance
The inorganic non-metallic oxidate nano high-isolation film of separating performance, and the throughput rate of winding film plating is also improved, increased
Economic benefit, reduces the input of production equipment cost.
To achieve these goals, this utility model prepares the true of high-barrier inorganic nano nonmetal film there is provided a kind of
Blank coil around filming equipment, including：Winding actuating device, it includes unwinding device and wrap-up, for by flexible parent metal from putting
Start to unreel on winding apparatus, and be wound on wrap-up so that its surface at one with refrigeration axle is stretched out, and is exposed to steaming
The evaporation region for rising；Chiller, is arranged on region to be evaporated, and it has refrigeration axle, for carrying out to the thin film after evaporation
Cooling；E type electron gun group evaporation coating devices, used as evaporation source, it is arranged on the region to be evaporated lower section of evaporated film transmission route,
It is evaporated in evaporation region for holding and heating material to be evaporated, and evaporated film is formed on flexible parent metal surface；From
Component assistant depositing device, is arranged on the rear of chiller, for being bombarded the evaporated film after cooling to improve it
Barrier property；E types electron gun group evaporation coating device is combined by multiple electron gun crucibles and formed.
Further, e types electron gun group evaporation coating device is made up of 3-5 platform e type electron gun crucibles.
Further, e types electron gun group evaporation coating device is made up of 4 e type electron gun crucibles；4 e type electron gun crucible water
Flat raft is arranged, and is arranged on the underface of evaporation region.
Further, the linear a line arrangement of e types electron gun crucible or mutually contradictory dislocation parallelogram arrangement.
Further, the θ of deposition angles scope 2 when e types electron gun is deposited with is 30～45 °.
Further, the θ of deposition angles scope 2 when e types electron gun is deposited with is 35 DEG C.
Further, the distance between adjacent e types electron gun is 350mm.
Further, the upper end of the electron gun crucible is provided with auxiliary discharge gas input port.
The beneficial effects of the utility model：
The vacuum winding filming equipment of the preparation high-barrier inorganic nano nonmetal film that this utility model is provided, employs
The electron beam evaporation being applied in combination by multiple stage e type electron gun winds evaporation process, by such as 4 e type electron guns of multiple stage e type electron gun
The underface of chiller is placed horizontally at, to reach the maximum amount of evaporation, and by the linear a line or parallel of e type electron guns
Quadrangular array is deposited with, by the distance between adjacent e types electron gun, between e types electron gun and flexible parent metal it is vertical away from
From and evaporation angular range control in certain scope, and while control driving system for winding cause flexibility to be deposited
Base material is limited Parameter Conditions during evaporation within the specific limits with certain speed rates, so as to reach optimal evaporation, is obtained
With good barrier properties can nano inorganic nonmetal oxide high-isolation film.E type electron guns are adopted in the evaporation coating method
The divergent bundle in the way of linear arrangement combination, not only accelerates the evaporation rate of Inorganic Non-metallic Materials, improves winding
The throughput rate of plated film, also reduces the input of production equipment cost, increased economic benefit.
Description of the drawings
Fig. 1 is the coil film coating apparatus schematic diagram according to exemplary embodiments of the present utility model；
Fig. 2 is the structural representation of evaporated film when 4 electron guns are horizontally arranged in this utility model embodiment；
Fig. 3 is in electron gun crucible when inorganic non-metal composite material thin film is deposited with embodiment of the present utility model 3
The structural representation of deposition material arrangement.
Specific embodiment
The technical solution of the utility model is described in detail below by way of exemplary specific embodiment.But should not be by
These embodiments are construed to the restriction to this utility model protection domain.All skills realized based on this utility model the above
Art is encompassed by this utility model and is intended in the range of protection.
Unless otherwise stated, raw material described in embodiment and reagent are commercially available prod.
The magnetic biasing that electron gun is adopted is rotatable（E shape rifles）, due to electron beam flexing path proximity e fonts, can be divided into 180 DEG C and
270 DEG C two kinds, its basic structure is divided into six, filament cathode, anode, focusing electrode, permanent magnet, field coil and crucible etc.
Point, thermoelectron is disengaged by the negative electrode tungsten filament of hyperpyrexia, is accelerated using the high voltage electric field of negative electrode and front anode, and line focus extremely gathers
Bunchy pass through centre bore, the magnetic field that field coil is formed then can flexing electron beam the direction of motion, be allowed to bend to material to be plated
Material surface.Due to there is an externally-applied magnetic field, crucible receives this action of a magnetic field to this structure with the secondary electron produced by evaporation source material,
Can deflect and be absorbed by diversion, can so reduce the impact caused by secondary electron, the deflection of electron beam is mainly by magnetic
Manipulating, the size for changing magnetic field is the position Ge that movable electronic beam bombards material surface X-direction to the electric current of field coil, if adding
Y-direction magnetic field then can simultaneously make the planar graph scanning in the directions of XY two, it is to avoid material borehole phenomenon, and can uniform construction store
Material.
As Figure 1-3, this utility model provides a kind of winding film plating equipment, and it is used to preparing high-barrier nano inorganic
Nonmetal film.The winding film plating equipment include driving system for winding, e type electron gun groups evaporation coating device 40, chiller 50 with
And ion source assisted device 60.Wherein, winding actuating device includes unwinding device 10, wrap-up 20 and for controlling
Actuating device, by actuating device so that flexible parent metal 30 is unreeled and wound.One end of flexible parent metal 30 is arranged on puts
Start to unreel on winding apparatus 10, be transmitted through the deflector roll 70 of actuating device, in the refrigeration axle surface extension of chiller 50
Come, be exposed to the evaporation region of evaporation source, that is, enter into the evaporation region positioned at the top of e type electron gun groups evaporation coating device 40.
Wound into wrap-up 20 by the deflector roll 70 of actuating device after the completion of evaporation.
E type electron gun groups evaporation coating device 40 is arranged on the lower section of the chiller 50 of thin film transmission route, for holding and
Heating material to be evaporated makes it evaporate in evaporation region, and evaporated film layer is formed on the surface of flexible parent metal 30.E type electron guns
Group evaporation coating device 40 can be combined to be formed by multiple electron gun crucibles.Electron gun crucible horizontal positioned, it can be linear group
The mode of conjunction is evaporated, for example, arrange in a row；Can also be placed in the way of mutually contradictory dislocation, such as be in parallel four side
The mode of shape is deposited with.
The scope of deposition angles can be entered according to the height of the vertical dimension between electron gun and the refrigeration axle of chiller
Row is adjusted.Angle when representing evaporation with θ between edge electronic beam and vertical curve, then when electron gun crucible is with linear combination,
The θ of deposition angles scope 2 of each e type electron gun is 30～45 °, preferably 35 DEG C；And the distance between adjacent electron gun is
350mm.It is preferred that vaporising device 40 is 3-5 platform e type electron gun crucibles；More preferably 4 e type electron gun crucibles.
This utility model is using four e type electron gun horizontal positioned and arranges in a row, and by between adjacent electronics rifle
Spacing, the θ of deposition angles scope 2 of electron gun are limited within the specific limits, and big so as to possess evaporation wide cut, process stabilizing etc. is excellent
Gesture.Whole technical process is simple, easy and safe to operate, can pass through the transmission power of regulation and control e type electron guns and then control evaporation
When winding speed, and then regulate and control thickness of the nano inorganic Nonmetal barrier layer on the surface of flexible parent metal 30, obtain to oxygen and
Vapor has the barrier layer of preferable barrier, while also achieving serialization evaporation production, opens e type electron guns
In winding film plating and the coating process field of inorganic non-metallic oxide.
This utility model additionally provides a kind of preparation method of high-barrier nano inorganic non-metallic thin film, and it is using above-mentioned
Winding film plating equipment be deposited with.Electron beam evaporation winding film plating of the present utility model is made with solid oxygen SiClx or aluminium oxide
To evaporate material, gaseous state is heated and flashes to by e type electron guns, after evaporating afterwards in the presence of chiller, in flexibility
The surface deposition of base material, generates transparent inorganic nanometer barrier layer.The raw material being deposited with using electron gun evaporation process and organic list
Body material compares more cheap, and plated film efficiency high, barrier layer has preferable barrier property.
Specifically, wind what evaporation process was realized in：Walk the chiller of film route in driving system for winding first
50 lower section, places as needed the e type electron guns of linear a line arrangement or mutually contradictory Heterogeneous Permutation, puts in plated film rear end
Put same amount of ion source.Complete to wind after the preparation for wearing film, add to be deposited inorganic non-in electron gun crucible
The addition of metal material, such as silicon oxide or aluminium oxide, or both interval, closes vacuum chamber, to vacuum equipment evacuation.
After reaching setting technique vacuum, start winding film plating drive system, after the winding speed of flexible parent metal reaches setting speed,
Open e type electron gun power supplys, it is to be deposited it is stable after, open the baffle plate above e type electron guns, the flexible base being wound through to top
Material carries out the evaporation of nano inorganic nonmetal oxide thin-film material.Open the ion source of film path rear end simultaneously, to being steamed
The thin film of plating is bombarded.The vacuum of coating chamber is regulated and controled, and opens driving system for winding and electron gun emission system,
Treating deposition material carries out high temperature plating, so that it forms evaporated film layer on flexible parent metal surface.
The e type electron gun groups that this utility model is adopted can be combined by least two e type electron guns.Wherein, e types electricity
The power of sub- rifle is 1～10kW, preferably 4kW.According to this utility model, e types electron gun preferably can be by 3～5 e types electricity
Sub- rifle is applied in combination.More preferably it is applied in combination by 4 e type electron guns.Horizontal positioned when 4 e types electron guns are combined, linearly
A line or mutually contradictory dislocation parallelogram are arranged, and such as 4 e types electron guns form parallelogram arrangement.
According to this utility model, the electronic beam current of e type electron guns is 300～700mA, and voltage is -6.0～-9.0kV.It is excellent
The electronic beam current for selecting e type electron guns is 400～550mA, and voltage is -7.0～-8.0kV.More preferably electronic beam current is 500mA, electric
Press as -7.8kV.This utility model by accurately controlling the electronic beam current and voltage of electron gun, so as to regulate and control deposition material
Evaporation rate, to avoid the evaporation rate of material to be deposited too fast, if evaporation rate is too fast, can cause evaporated film
Granule is larger, and evaporated film has more crackle, so as to reduce the barrier property of nano inorganic nonmetal film.By adjusting
Control electronic beam current and voltage so that evaporation power and speed are maintained in certain scope is less and arrange so as to obtain granule
Row are fine and close, the less evaporated film of surface roughness, improve the barrier property of nano inorganic nonmetal film.
According to this utility model, include the step of regulate and control to the vacuum of coating chamber：Using vacuum pump group, by plated film
The vacuum of room is evacuated to the scope needed for technique evaporation；It is preferred that being evacuated to Vacuum Deposition for 3.0 × 10-3Pa.Afterwards in electron gun crucible
Upper end input port input auxiliary discharge gas, and adjust the operating air pressure in plated film room for 3.5～6.5 × 10-2Pa；Preferably
5.0×10-2Pa.Wherein, the auxiliary discharge gas being passed through when electron gun is deposited with is preferably oxygen.Due to beam energy it is higher,
As silicon oxide anoxia can be caused when being directly deposited with silicon oxide, it is passed through oxygen and enables to deposition material oxidation, it is ensured that in flexible base
The surface deposition of material is silicon oxide film.Temperature during evaporation is 1600～2100 DEG C.When material to be deposited is silicon oxide,
It is preferred that evaporation temperature is 1600 DEG C；When material to be deposited is aluminium oxide, preferably temperature to be deposited is 2100 DEG C.
The evaporation radiation scope of every e type electron guns of the present utility model in 300-350mm or so, using multiple stage e type electricity
Sub- rifle is applied in combination the needs that disclosure satisfy that big wide cut plated film.Evaporation when this utility model is applied in combination using e type electron guns
The abundant ionization of particle, the nano film material better quality for being deposited, film layer is finer and close, with more preferable barriering effect.
In preferred embodiment of the present utility model, the winding speed of driving system for winding is 10～200m/ minutes；It is preferred that
For 50～200m/ minutes；More preferably 100m/ minutes.The flexible parent metal that this utility model is adopted can for PET, PEN or
PA plastic sheetings.The thickness of general flexible parent metal is 12 μm～125 μm；Preferably 50～90 μm.
According to this utility model, after evaporated film, also include the thin film after evaporation is bombarded using ion source
Step.The quantity in preferred ion source is identical with the quantity of e type electron guns.Ionogenic auxiliary discharge gas is argon.This practicality
It is new by being bombarded the sull after evaporation using ion source, its objective is to bombard film by energetic ion source
Layer, can be fine and close by the loose structure compacting of film surface, and can refine bulky grain, reduces the thick of evaporated film surface
Rugosity, so as to improve evaporated film surface soundness, plays the effect for improving barrier property.
According to this utility model, running voltage when ion source bombards is preferably 80～120V, and operating current is preferably 3～
6A.Further preferably running voltage is 100V, and operating current is 5A.
Embodiment 1
Aluminium oxide deposition particle is uniformly made an addition in electron gun annular crucible, and adjusts electron gun adjacent during evaporation
The distance between be 350mm.The PET coiled materials of 12 μ m-thicks are positioned at the unreeling shaft of unwinding device, and according to winding Zou Mo roads
Footpath completes to wear film preparation.Plated film vacuum chamber is closed, prepares evacuation.
When the vacuum in plated film vacuum room reaches 5.0 × 10-3During Pa base vacuums, by electron gun crucible upper end oxygen
Input port is input into oxygen, adjusts plated film operating air pressure to 5.0 × 10-2Pa.The work of e types electron gun is opened, electronic beam current is
550mA, voltage is -8.0kV, and about 2100 DEG C of evaporations of high temperature are carried out to aluminium oxide deposition particle.Open driving system for winding, setting
When the winding speed of driving system for winding is 100m/min, after evaporation is stable e type electron gun upper guard-plates are opened so that e types electricity
The θ of deposition angles scope 2 of sub- rifle is 35 DEG C, carries out the evaporation of nano aluminium oxide Inorganic Non-metallic Materials.
After the completion of evaporation, in thin film transmission path rear end, ion source setting operating current 5A, voltage 100V, after evaporation
Membranous layer of silicon oxide bombarded, to improve film quality.The nano oxygen of 12 μ m-thick PET films is carried out according to above-mentioned technological parameter
Change aluminum inorganic non-metallic Oxide Electron beam evaporation.
Embodiment 2
Silicon oxide deposition particle is uniformly made an addition in electron gun annular crucible, and adjusts e types electricity adjacent during evaporation
The dislocation of sub- rifle interval is placed, and the distance between adjacent electronics rifle is 350mm.The PET coiled materials of 12 μ m-thicks are positioned over and unreel dress
At the unreeling shaft put, and complete to wear film preparation according to winding film path.Vacuum chamber is closed, prepares evacuation.
Vacuum reaches 5.0 × 10-3During Pa base vacuums, oxygen is input into by electron gun crucible upper end oxygen input port,
Plated film operating air pressure is adjusted to 5.0 × 10-2Pa.The work of e types electron gun is opened, electronic beam current is 500mA, and voltage is -7.8kV,
1600 DEG C of high temperature deposition is carried out to silicon oxide deposition particle.Driving system for winding is opened, the winding of driving system for winding is set
When speed is 100m/min, e type electron gun upper guard-plates are opened after evaporation is stable so that the deposition angles scope 2 of e type electron guns
θ is 35 DEG C, carries out the evaporation of nano silicon oxide inorganic non-metallic high-isolation film.
After the completion of evaporation, in thin film transmission path rear end, ion source setting operating current 5A, after voltage 100V is to evaporation
Membranous layer of silicon oxide is bombarded, and improves film quality.The nano silicon oxide of 12 μ m-thick PET films is carried out according to above-mentioned technological parameter
Inorganic non-metallic Oxide Electron beam is deposited with.
Embodiment 3
As shown in figure 3, the electron gun crucible group for being placed with granule silicon oxide to be deposited and aluminium oxide is in line placement,
And the distance between electron gun adjacent during evaporation is adjusted for 350mm.The PET coiled materials of 12 μ m-thicks are positioned over and unreel place, and
Film path is walked according to winding to complete to wear film preparation.Vacuum chamber is closed, prepares evacuation.
When the vacuum in plated film vacuum room reaches 5.0 × 10-3During Pa base vacuums, by electron gun crucible upper end oxygen
Input port is input into oxygen, adjusts plated film operating air pressure to 5.0 × 10-2Pa.The work of e types electron gun is opened, the e types of aluminium oxide are deposited with
The electronic beam current of electron gun is 550mA, and voltage is -8.0kV, and the electronic beam current for being deposited with the e type electron guns of silicon oxide is 500mA,
Voltage is -7.8kV.1600 DEG C of high temperature deposition is carried out to silicon oxide deposition particle, 2100 DEG C are carried out to aluminium oxide deposition particle
High temperature deposition.
Driving system for winding is opened, when setting the winding speed of driving system for winding as 100m/min, is beaten after evaporation is stable
Open e type electron gun upper guard-plates so that the θ of deposition angles scope 2 of e type electron guns is 35 DEG C, carries out nano silicon oxide/aluminium oxide
The evaporation of material.
After the completion of evaporation, in thin film transmission path rear end, ion source setting operating current 5A, voltage 100V, after evaporation
Silica/alumina composite film layer bombarded, to improve film quality.12 μ m-thicks are carried out according to above-mentioned technological parameter
The nano silicon oxide inorganic non-metallic Oxide Electron beam evaporation of PET film.
Embodiment 4
Its preparation method is same as Example 3, and difference is in the embodiment 4 after the completion of evaporation, not thin
The rear end of film transmission path adopts ion source to be bombarded silica/alumina composite film layer to improve film quality.
Table 1
Note：The PET original film OTR oxygen transmission rates of 12 μ m thicks are 130cc/m2.day, moisture-vapor transmission is 40g/m2.day；
Test condition：OTR：25 DEG C, RH 0%, WVTR：38 DEG C, RH90%.
From the result of embodiment 1-3 of the present utility model, steamed by multigroup e types electron beam winding of the present utility model
Coating apparatus are deposited with silicon oxide or aluminium oxide or silica/alumina as nano inorganic Nonmetal barrier thin-film material, obtain
Evaporated film with preferable barrier property, its product meets conventional packaging barrier.Data from table 1 can be with
, it is evident that the either single silica material in embodiment 1 in single alumina material or embodiment 2, after its evaporation
The barrier layer properties for obtaining not as the composite alumina/silicon oxide film in embodiment 3, illustrate to be prepared using this method
Go out the composite film layer with more preferable oxygen and vapor water barriers performance.
Compared with comparative example 1, in embodiment 4 laminated film after evaporation is bombarded as a result of ion source, led to
Cross ionogenic bombardment can in silica/alumina evaporation the further granule of ionization evaporation, bombard evaporated film layer, ram
Real evaporated film layer, thinning film layer granule so that the thin film compactness of deposition more preferably, further increases barrier property.
The above, is only several embodiments of the application, any type of restriction is not done to the application, although this Shen
Please disclosed as above with preferred embodiment, but and be not used to limit the application, any those skilled in the art are not taking off
In the range of technical scheme, make a little variation using the technology contents of the disclosure above or modification is equal to
Effect case study on implementation, belongs in the range of technical scheme.
Claims (8)
1. a kind of vacuum winding filming equipment for preparing high-barrier inorganic nano nonmetal film, it is characterised in that include：
Winding actuating device, it includes unwinding device (10) and wrap-up (20), for by flexible parent metal (30) from unreeling dress
To put start on (10) and unreel, and be wound on wrap-up (20) so that its surface at one with refrigeration axle is stretched out, and is exposed
In the evaporation region of evaporation source；
Chiller (50), is arranged on region to be evaporated, and it has refrigeration axle, for cooling down to the thin film after evaporation；
E types electron gun group evaporation coating device (40), used as evaporation source, it is arranged under the region to be evaporated of evaporated film transmission route
Side, makes it evaporate in evaporation region for holding and heating material to be evaporated, and evaporation is formed on flexible parent metal (30) surface
Thin film；
Ion source assisted device (60), is arranged on the rear of the chiller (50), for thin to the evaporation after cooling
Film is bombarded to improve its barrier property；
E types electron gun group evaporation coating device (40) is combined by multiple electron gun crucibles and is formed.
2. vacuum winding filming equipment according to claim 1, it is characterised in that the e types electron gun group evaporation coating device
(40) it is made up of 3-5 platform e type electron gun crucibles.
3. vacuum winding filming equipment according to claim 2, it is characterised in that the e types electron gun group evaporation coating device
(40) it is made up of 4 e type electron gun crucibles；4 e type electron gun crucibles are horizontally arranged, and are arranged on the underface of evaporation region.
4. vacuum winding filming equipment according to claim 3, it is characterised in that the e types electron gun crucible is linear
A line is arranged or mutually contradictory dislocation parallelogram arrangement.
5. vacuum winding filming equipment according to claim 4, it is characterised in that steaming when e type electron guns are deposited with
Plating angular range 2 θ is 30～45 °.
6. vacuum winding filming equipment according to claim 5, it is characterised in that steaming when e type electron guns are deposited with
Plating angular range 2 θ is 35 DEG C.
7. vacuum winding filming equipment according to claim 5, it is characterised in that the distance between adjacent e types electron gun
For 350mm.
8. vacuum winding filming equipment according to claim 1, it is characterised in that the upper end of the electron gun crucible is arranged
There is auxiliary discharge gas input port.
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| CN201621165254.XU CN206089793U (en) | 2016-10-25 | 2016-10-25 | Apparatus for preparing high resistant separates vacuum winding coating of nanometer inorganic non -metallic film |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106929806A (en) * | 2016-10-25 | 2017-07-07 | 广东振华科技股份有限公司 | High-barrier nano inorganic non-metallic film, its preparation method and vacuum winding filming equipment |
| CN115198245A (en) * | 2022-07-18 | 2022-10-18 | 浙江弘康半导体技术股份有限公司 | Oxide high-barrier film, preparation method and vacuum winding coating equipment |
-
2016
- 2016-10-25 CN CN201621165254.XU patent/CN206089793U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106929806A (en) * | 2016-10-25 | 2017-07-07 | 广东振华科技股份有限公司 | High-barrier nano inorganic non-metallic film, its preparation method and vacuum winding filming equipment |
| CN106929806B (en) * | 2016-10-25 | 2020-06-02 | 广东振华科技股份有限公司 | High-barrier nano inorganic non-metallic film, preparation method thereof and vacuum winding coating equipment |
| CN115198245A (en) * | 2022-07-18 | 2022-10-18 | 浙江弘康半导体技术股份有限公司 | Oxide high-barrier film, preparation method and vacuum winding coating equipment |
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