CN111826627A - Process chamber and coating line for improving vacuum coating depth of via hole - Google Patents
Process chamber and coating line for improving vacuum coating depth of via hole Download PDFInfo
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- CN111826627A CN111826627A CN202010793159.9A CN202010793159A CN111826627A CN 111826627 A CN111826627 A CN 111826627A CN 202010793159 A CN202010793159 A CN 202010793159A CN 111826627 A CN111826627 A CN 111826627A
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- power supply
- electric field
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3471—Introduction of auxiliary energy into the plasma
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- Physics & Mathematics (AREA)
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- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a process chamber and a coating line for improving the vacuum coating depth of a via hole, wherein a track, a target, an electric field energy supply power supply, a target power supply or an auxiliary electrode are arranged in the process chamber, the process chamber is in a vacuum state, the target is arranged on one side or two sides of a substrate, and the substrate is arranged on the track and can move on the track; the electric field energy supply source provides an electric field for the substrate and is connected with the track or the auxiliary electrode; the electric field energy supply power source adopts a radio frequency power source or a high-frequency alternating current power source; the target power supply provides an electric field for the target, and is connected with the target; the target power supply adopts a direct current power supply or a high-energy pulse power supply or an intermediate frequency power supply; the invention can efficiently finish the film coating work of a large number of products, and ensures that the film coating work of a large number of workpieces with tiny via holes is more guaranteed in quality.
Description
Technical Field
The invention relates to the technical field of surface engineering, in particular to a process chamber and a coating line for improving the vacuum coating depth of a via hole.
Background
Printed Circuit Boards (PCBs), also known as PCBs, are providers of electrical connections for electronic components, are one of the indispensable components of electronic devices in the electronics industry, and are used in almost all electronic devices. In the production process of the circuit board, the metallization of the through holes is an indispensable ring, in the manufacturing process, electroless copper plating occupies the domination of the metallization of the through holes, the main technical basis is an electroless copper plating patent formula and a colloid target patent formula which are proposed in the 60 th of the 20 th century, and the preparation method is the basic process of the current circuit board production. The vacuum plating dry-method metallization technology is different from a chemical method, adopts completely different ideas, has no chemical reaction and no sewage discharge, and is one of the most potential technologies for replacing the chemical method.
The vacuum plating can directly gasify target metal into a plasma state through glow discharge or arc discharge, and then the target metal is deposited on the surface of a substrate again in a vacuum environment to form a film, and the metal layer deposition can be completed on the surface of a circuit board by using the method. However, for the via hole with a generally smaller diameter on the plate surface, due to the small aperture, the metal particles are difficult to penetrate deeply, and a continuous metal layer is difficult to form, so that the interconnection and intercommunication effects cannot be achieved, and generally, the ratio of the coating depth to the aperture of the common vacuum magnetron sputtering via hole is about 4, so that the application requirements cannot be met.
In view of the above-mentioned drawbacks, the inventors of the present invention have finally obtained the present invention through a long period of research and practice.
Disclosure of Invention
In order to solve the technical defects, the invention can be realized by the following technical scheme: a process chamber for improving the vacuum coating depth of a via hole is provided with a track, targets, an electric field energy supply power supply and a target power supply, wherein the process chamber is in a vacuum state, the targets are arranged on one side or two sides of a substrate, and the substrate is arranged on the track and can move on the track; the electric field energy supply power supply provides an electric field for the substrate and is connected with the track; the electric field energy supply power source adopts a radio frequency power source or a high-frequency alternating current power source; the target power supply provides an electric field for the target, and is connected with the target; the target power supply adopts a direct current power supply or a high-energy pulse power supply or an intermediate frequency power supply.
Preferably, the process chamber for increasing the vacuum coating depth of the via hole comprises a track, a target, an electric field energy supply source, a target power source and an auxiliary electrode, wherein the process chamber is in a vacuum state, the target is mounted on one side or two sides of the substrate, and the substrate is mounted on the track and can move on the track; the electric field energy supply source provides an electric field for the substrate and is connected with the auxiliary electrode; the electric field energy supply power source adopts a radio frequency power source or a high-frequency alternating current power source; the target power supply provides an electric field for the target, and is connected with the target; the target power supply adopts a direct current power supply or a high-energy pulse power supply.
Preferably, the targets are arranged on two sides of the substrate, the electric field energy supply source adopts a radio frequency power supply, and the electric field energy supply source is connected with the track to supply a radio frequency electric field to the substrate; the target power supply adopts a direct current power supply or a high-energy pulse power supply or an intermediate frequency power supply.
Preferably, the target is installed on one side of the substrate, the electric field energy supply source adopts a radio frequency power supply, and the electric field energy supply source is connected with the track to supply a radio frequency electric field to the substrate; the target power supply adopts a direct current power supply or a high-energy pulse power supply.
Preferably, the target is installed on one side or both sides of the substrate, the mesh-shaped auxiliary electrodes are symmetrically arranged on both sides of the substrate, the distance between the auxiliary electrodes and the substrate is not more than 10mm, the electric field energy supply source adopts a high-frequency alternating current power supply, the electric field energy supply source is connected with the auxiliary electrodes, a high-frequency alternating current electric field is formed in an area between the auxiliary electrodes, and the target power supply adopts a direct current power supply or a high-energy pulse power supply.
Preferably, the target is installed on one side of the substrate, a mesh or flat plate-shaped auxiliary electrode is arranged on one surface of the substrate, which faces away from the target, the distance between the auxiliary electrode and the substrate is not more than 10mm, the electric field energy supply source adopts a radio frequency power supply, the electric field energy supply source is connected with the auxiliary electrode, a radio frequency electric field is formed in the area around the auxiliary electrode, and the target power supply adopts a direct current power supply or a high-energy pulse power supply.
Preferably, the coating line comprises an upper piece table, a pre-pumping chamber, a high vacuum chamber, a first speed regulating chamber, an activation chamber, a process chamber for improving the vacuum coating depth of the via hole, a second speed regulating chamber, a transition chamber and a lower piece table which are arranged in sequence, wherein a substrate enters the pre-pumping chamber from the upper piece table, enters the high vacuum chamber after being vacuumized, enters the activation chamber for plasma cleaning and activation after the advancing speed of the substrate is regulated by the first speed regulating chamber, enters the process chamber for coating after being activated, and is finished after the substrate is coated by the second speed regulating chamber, the transition chamber and the lower piece table.
Preferably, the activation chamber is connected to a plasma cleaning source.
Compared with the prior art, the invention has the beneficial effects that:
1. the invention applies the radio frequency electric field of high frequency conversion on the substrate or the auxiliary cathode to make the charged particles generate forced oscillation, thereby improving the collision frequency among the particles;
2. the target power supply adopts a high-energy pulse power supply, which can provide instantaneous current of hundreds of amperes for the target material, so that the ionization rate of the target material is improved by 3-5 times; the density of the charged particles is improved, and the utilization efficiency of a radio frequency field is improved;
3. the invention is an extension of the vacuum coating technology, can solve the problem that the depth of the vacuum coating of the tiny via hole is not enough, and improves the ratio of the coating depth to the diameter of the via hole from 4: 1 to more than 10: 1;
4. the invention can not only improve the coating depth of the tiny via hole, but also realize the continuous coating of the tiny via hole, so that the mass coating work of the workpiece with the tiny via hole is more guaranteed in quality.
Drawings
FIG. 1 is a schematic view of an embodiment of the plating line for increasing the vacuum plating depth of a via hole;
FIG. 2 is a schematic view of a first embodiment of a process chamber according to the present invention;
FIG. 3 is a schematic view of a second embodiment of a process chamber according to the present invention;
FIG. 4 is a schematic view of a third embodiment of a process chamber according to the present invention;
FIG. 5 is a schematic view of a fourth embodiment of a process chamber according to the present invention;
FIG. 6 is a schematic view of a fifth embodiment of a process chamber according to the present invention;
the figures in the drawings represent:
1-a loading table; 2-a pre-pumping chamber; 3-a high vacuum chamber; 4-a first speed regulation chamber; 5-an activation chamber; 6-plasma cleaning source; 7-a process chamber; 8-electric field energy supply source; 9-a pump group; 10-target power supply; 11-a target; 12-a track; 13-a substrate; 14-a second speed regulation chamber; 15-a transition chamber; 16-a sheet placing table; 17-auxiliary electrodes.
Detailed Description
The above and further features and advantages of the present invention are described in more detail below with reference to the accompanying drawings.
As shown in fig. 1, fig. 1 is a schematic view of an embodiment of the plating line for increasing the depth of vacuum plating through holes, and the plating line for increasing the depth of vacuum plating through holes according to the present invention includes an upper stage 1, a pre-pumping chamber 2, a high vacuum chamber 3, a first speed adjusting chamber 4, an activation chamber 5, a process chamber 7, a second speed adjusting chamber 14, a transition chamber 15, and a lower stage 16.
The activation chamber 5 is connected to a plasma cleaning source 6. The substrate 13 enters the pre-pumping chamber 2 from the loading table 1, enters the high vacuum chamber 3 along the rail 12 after being pumped vacuum, the substrate 13 passes through the first speed regulating chamber 4 to regulate the advancing speed, then enters the activation chamber 5 to be subjected to plasma cleaning and activation, the substrate 13 enters the process chamber 7 to be coated after being activated, and the substrate 13 leaves a coating line after passing through the second speed regulating chamber 14, the transition chamber 15 and the unloading table 16 after being coated.
Fig. 2 to 6 show an embodiment of the process chamber 7 according to the invention, see fig. 2 to 6. The process chamber 7 includes: a track 12, a substrate 13, a target 11, an electric field power supply 8, a target power supply 10, a pump set 9, and an auxiliary electrode 17. Wherein the target 11 is mounted on one side or both sides of the substrate 13.
The base plate 13 is mounted on the rail 12 and can move on the rail 12; the electric field energy supply source 8 provides an electric field for the substrate 13, and the electric field energy supply source 8 can be connected with the track 12 or the auxiliary electrode 17; the electric field energy supply source 8 can adopt a radio frequency power supply or a high-frequency alternating current power supply.
The target power supply 10 provides an electric field for the target 11, and the target power supply 10 is connected with the target 11; the target power supply 10 may be a dc power supply, a high-energy pulse power supply, or an intermediate frequency power supply.
Depending on the relative position of the substrate 13 and the target 11, whether the auxiliary electrode 17 is used, the process chamber 7 may adopt different solutions, which are exemplified below using fig. 2 to 5:
example one
In one embodiment of the first embodiment, as shown in fig. 2, the targets 11 are installed on both sides of the substrate 13 without using the auxiliary electrodes 17, the electric field power supply 8 uses a radio frequency power supply, and the electric field power supply 8 is connected to the rail 12 to apply a radio frequency electric field to the substrate 13; the target power supply 10 adopts a direct current power supply or a high-energy pulse power supply.
The embodiment has the advantages that the existing coating equipment in the market is slightly changed, and if the power supply uses a direct-current power supply, the ratio of the depth to the diameter of the coating can reach 5: 1; if the power supply uses a high-energy pulse power supply, the ratio of the depth to the diameter of the coated film can reach 10: 1, and the embodiment is suitable for double-sided coating.
Example two
In another embodiment of the first embodiment, as shown in fig. 3, the targets 11 are installed on both sides of the substrate 13 without using the auxiliary electrodes 17, the electric field power supply 8 uses a radio frequency power supply, and the electric field power supply 8 is connected to the track 12 to apply a radio frequency electric field to the substrate 13; the target power supply 10 employs a medium frequency power supply.
The embodiment has the advantages that the number of target power supplies is reduced, the ratio of depth to diameter of the coating film can reach 8: 1, and the embodiment is suitable for double-sided coating.
EXAMPLE III
In an embodiment of the second scheme, as shown in fig. 4, the target 11 is installed on one side of the substrate 13 without using the auxiliary electrode 17, the electric field power supply 8 adopts a radio frequency power supply, and the electric field power supply 8 is connected with the track 12 to apply a radio frequency electric field to the substrate 13; the target power supply 10 adopts a direct current power supply or a high-energy pulse power supply.
The embodiment has the advantages that if the power supply uses a direct current power supply, the ratio of the depth to the diameter of the coated film can reach 5: 1; if the power supply uses a high-energy pulse power supply, the ratio of the depth to the diameter of the coated film can reach 10: 1, and the embodiment is suitable for single-sided coating.
Example four
In an embodiment of the third embodiment, as shown in fig. 5, the targets 11 are mounted on both sides of the substrate 13, the mesh-shaped auxiliary electrodes 17 are symmetrically arranged on both sides of the substrate 13, the distance between the auxiliary electrodes 17 and the substrate 13 is not more than 10mm, the electric field power supply 8 is a high-frequency ac power supply, the electric field power supply 8 is connected to the auxiliary electrodes 17, a high-frequency ac electric field is formed in the region between the auxiliary electrodes 17, and the target power supply 10 is a dc power supply and a high-energy pulse power supply.
The embodiment has the advantages that the production efficiency is improved, and the depth-diameter ratio of the coating can reach 10: 1.
EXAMPLE five
In an embodiment of the fourth embodiment, as shown in fig. 6, the target 11 is mounted on one side of the substrate 13, the auxiliary electrode 17 in a mesh or flat plate shape is disposed on a surface of the substrate 13 facing away from the target 11, the distance between the auxiliary electrode 17 and the substrate 13 is not more than 10mm, the electric field power supply 8 employs a radio frequency power supply, the electric field power supply 8 is connected to the auxiliary electrode 17, a radio frequency electric field is formed in a region around the auxiliary electrode 17, and the target power supply 10 employs a direct current power supply or a high-energy pulse power supply.
The embodiment has the advantages that the temperature rise of the substrate is obviously reduced in the coating process, the method is suitable for the temperature-sensitive coated substrate, and the ratio of the depth to the diameter of the coated film can reach 10: 1.
The foregoing is merely a preferred embodiment of the invention, which is intended to be illustrative and not limiting. It will be understood by those skilled in the art that various changes, modifications and equivalents may be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (8)
1. A process chamber for improving the vacuum coating depth of a via hole is characterized in that a track, a target, an electric field energy supply power supply and a target power supply are arranged in the process chamber, the process chamber is in a vacuum state, the target is mounted on one side or two sides of a substrate, and the substrate is mounted on the track and can move on the track; the electric field energy supply power supply provides an electric field for the substrate and is connected with the track; the electric field energy supply power source adopts a radio frequency power source or a high-frequency alternating current power source; the target power supply provides an electric field for the target, and is connected with the target; the target power supply adopts a direct current power supply or a high-energy pulse power supply or an intermediate frequency power supply.
2. A process chamber for improving the vacuum coating depth of a via hole is characterized by comprising a track, targets, an electric field energy supply power supply, a target power supply and auxiliary electrodes, wherein the process chamber is in a vacuum state, the targets are arranged on one side or two sides of a substrate, and the substrate is arranged on the track and can move on the track; the electric field energy supply source provides an electric field for the substrate and is connected with the auxiliary electrode; the electric field energy supply power source adopts a radio frequency power source or a high-frequency alternating current power source; the target power supply provides an electric field for the target, and is connected with the target; the target power supply adopts a direct current power supply or a high-energy pulse power supply.
3. The chamber of claim 1, wherein said targets are mounted on both sides of said substrate, and said electric field power source is an rf power source, and said rf power source is connected to said track to apply an rf electric field to said substrate; the target power supply adopts a direct current power supply or a high-energy pulse power supply or an intermediate frequency power supply.
4. The chamber of claim 1, wherein said target is mounted on one side of said substrate, and said electric field power source is an rf power source, and said electric field power source is connected to said track to apply an rf electric field to said substrate; the target power supply adopts a direct current power supply or a high-energy pulse power supply.
5. The chamber for increasing the vacuum plating depth of via holes according to claim 2, wherein said targets are mounted on one or both sides of said substrate, said auxiliary electrodes are symmetrically disposed on both sides of said substrate, said auxiliary electrodes are spaced from said substrate by a distance of not more than 10mm, said electric field power supply uses a high frequency ac power supply, said electric field power supply is connected to said auxiliary electrodes, a high frequency ac electric field is formed in a region between said auxiliary electrodes, and said target power supply uses a dc power supply or a high energy pulse power supply.
6. The chamber according to claim 2, wherein the target is mounted on one side of the substrate, the auxiliary electrode is disposed on a surface of the substrate opposite to the target, the auxiliary electrode is spaced from the substrate by a distance of not more than 10mm, the electric field power supply is a radio frequency power supply, the electric field power supply is connected to the auxiliary electrode, a radio frequency electric field is formed in a region around the auxiliary electrode, and the target power supply is a dc power supply or a high energy pulse power supply.
7. A coating line is characterized by comprising an upper piece platform, a pre-pumping chamber, a high vacuum chamber, a first speed regulating chamber, an activation chamber, a process chamber for improving the depth of vacuum coating of a via hole according to any one of claims 1 to 6, a second speed regulating chamber, a transition chamber and a lower piece platform which are arranged in sequence, wherein a substrate enters the pre-pumping chamber from the upper piece platform, enters the high vacuum chamber after being vacuumized, enters the activation chamber for plasma cleaning and activation after the advancing speed of the substrate is regulated by the first speed regulating chamber, enters the process chamber for coating after being activated, and finishes coating after the coating of the substrate passes through the second speed regulating chamber, the transition chamber and the lower piece platform.
8. The coating line of claim 7, wherein the activation chamber is coupled to a plasma cleaning source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010793159.9A CN111826627A (en) | 2020-08-07 | 2020-08-07 | Process chamber and coating line for improving vacuum coating depth of via hole |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010793159.9A CN111826627A (en) | 2020-08-07 | 2020-08-07 | Process chamber and coating line for improving vacuum coating depth of via hole |
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| CN111826627A true CN111826627A (en) | 2020-10-27 |
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| CN202010793159.9A Pending CN111826627A (en) | 2020-08-07 | 2020-08-07 | Process chamber and coating line for improving vacuum coating depth of via hole |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2206791Y (en) * | 1993-01-08 | 1995-09-06 | 昆明亚日钛金电子研究所 | Vacuum film-plating device with netted electrode |
| US6077403A (en) * | 1997-06-06 | 2000-06-20 | Anelva Corporation | Sputtering device and sputtering method |
| US6462482B1 (en) * | 1999-12-02 | 2002-10-08 | Anelva Corporation | Plasma processing system for sputter deposition applications |
| CN102918633A (en) * | 2010-09-28 | 2013-02-06 | 东京毅力科创株式会社 | Film forming method and film forming device |
| CN110004422A (en) * | 2019-04-22 | 2019-07-12 | 中国电子科技集团公司第三十八研究所 | A kind of magnetron sputtering apparatus |
| US20200048760A1 (en) * | 2018-08-13 | 2020-02-13 | Applied Materials, Inc. | High power impulse magnetron sputtering physical vapor deposition of tungsten films having improved bottom coverage |
-
2020
- 2020-08-07 CN CN202010793159.9A patent/CN111826627A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2206791Y (en) * | 1993-01-08 | 1995-09-06 | 昆明亚日钛金电子研究所 | Vacuum film-plating device with netted electrode |
| US6077403A (en) * | 1997-06-06 | 2000-06-20 | Anelva Corporation | Sputtering device and sputtering method |
| US6462482B1 (en) * | 1999-12-02 | 2002-10-08 | Anelva Corporation | Plasma processing system for sputter deposition applications |
| CN102918633A (en) * | 2010-09-28 | 2013-02-06 | 东京毅力科创株式会社 | Film forming method and film forming device |
| US20200048760A1 (en) * | 2018-08-13 | 2020-02-13 | Applied Materials, Inc. | High power impulse magnetron sputtering physical vapor deposition of tungsten films having improved bottom coverage |
| CN110004422A (en) * | 2019-04-22 | 2019-07-12 | 中国电子科技集团公司第三十八研究所 | A kind of magnetron sputtering apparatus |
Non-Patent Citations (2)
| Title |
|---|
| 浦枝德: "《薄膜溅射技术手册》", 31 March 1993, 西南技术物理研究所 * |
| 陈海峰等: "《建筑玻璃加工技术 玻璃镀膜真空技术》", 31 March 2010, 华南理工大学出版社 * |
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Application publication date: 20201027 |
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