CN1898805A - 光数据通信模块 - Google Patents
光数据通信模块 Download PDFInfo
- Publication number
- CN1898805A CN1898805A CNA2004800387856A CN200480038785A CN1898805A CN 1898805 A CN1898805 A CN 1898805A CN A2004800387856 A CNA2004800387856 A CN A2004800387856A CN 200480038785 A CN200480038785 A CN 200480038785A CN 1898805 A CN1898805 A CN 1898805A
- Authority
- CN
- China
- Prior art keywords
- light
- emitting component
- communication module
- data communication
- recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004891 communication Methods 0.000 title claims abstract description 28
- 230000003287 optical effect Effects 0.000 title claims description 7
- 239000002184 metal Substances 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 229920005989 resin Polymers 0.000 claims abstract description 20
- 239000011347 resin Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000007789 sealing Methods 0.000 claims abstract description 12
- 238000005538 encapsulation Methods 0.000 claims description 10
- 239000010410 layer Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Led Device Packages (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
本发明提供一种红外线数据通信模块(1),包括:红外线发光元件(3)、红外线受光元件(4)和IC芯片(5)。将发光元件(3)、受光元件(4)和IC芯片(5)搭载在基板(2)上,并由密封树脂封装(6)所覆盖。在基板(2)上形成有内面由接地的金属膜(7)所覆盖的凹部(22),并且将发光元件(3)配置在该凹部(22)内。
Description
技术领域
本发明涉及安装于个人计算机、其周边机器、或者移动电话机等中的光通信模块,特别是红外线数据通信模块。
背景技术
图4表示现有技术的红外线数据通信模块的一个例子。图示的红外线数据通信模块9具有基板90,在该基板90的表面90a上安装有发光元件92、受光元件93和IC芯片94,并且这些零件均由密封树脂封装91所覆盖。树脂封装91具有用于集中从发光元件92发出的红外线以提高指向性的第一透镜部91a、和通过将从外部行进的红外线集中在受光元件93上以提高受光灵敏度用的第二透镜部91b。IC芯片94进行发光元件92的驱动控制、或者根据受光元件93发出的信号,向外部输出规定信号的信号处理等。例如在日本特开2002-76427号公报(下述专利文献1)中揭示有这种红外线数据通信模块。
专利文献1:日本特开2002-76427号公报。
在上述红外线数据通信模块9中,当驱动发光元件92时,有时从该发光元件92产生电磁干扰。另一方面,在该发光元件92附近配置有IC芯片94。因此,在现有技术中,从发光元件92产生的电磁干扰会对IC芯片94造成不良影响,有可能使IC芯片94产生错误动作。
此外,通常为了节省红外线数据通信模块的电力并提高其通信性能,而希望增加在规定的适当方向行进的从发光元件发出的红外线量。与此相对,在上述红外线数据通信模块9中,从发光元件92的侧面向该发光元件92的周边发出的红外线并不向着透镜部91a行进,造成浪费。因此,在这点上还有改善的余地。
发明内容
本发明是鉴于上述问题而提出,其目的在于提供能够减少因从发光元件发出的电磁干扰而引起IC芯片误动作的可能性,并减少从发光元件散射的红外线量的光数据通信模块,特别是红外线数据通信模块。
本发明提供的一种光数据通信模块,其特征在于,包括:基板、发光元件、受光元件、IC芯片和密封树脂封装,将上述发光元件、受光元件和IC芯片放置在上述基板上,并由上述密封树脂封装所覆盖,其中,在上述基板上形成有内面由接地的金属膜所覆盖的凹部,并且将上述发光元件配置在该凹部内。
采用这种结构,由于上述金属膜接地,发挥电磁屏蔽功能,所以利用该金属膜能够遮断从上述发光元件产生的电磁干扰,使其不能到达IC芯片。因此,可以防止因从受光元件产生的电磁干扰而引起的IC芯片的误动作。此外,利用上述金属膜能够将从上述发光元件发出的光向规定方向反射,因此,可以抑制光在发光元件周边散射。这样,可以增加从发光元件向树脂封装外部的规定方向的射出光量,可以节省电力,并提高通信性能。
根据本发明的优选实施方式,上述发光元件为红外线发光元件,上述受光元件为红外线受光元件。
优选上述金属膜的最上部的高度比上述发光元件的高度高。采用这种结构可以更加可靠地防止电磁干扰从发光元件向IC芯片行进。
优选将弹性率比上述树脂封装小的树脂充填在上述凹部中,并且利用该树脂来覆盖上述发光元件。采用这种结构,可以避免应力从上述树脂封装直接作用在上述发光元件上,可以保护上述发光元件。此外,若将树脂充填在上述凹部中,则树脂不会在上述发光元件周边流动而不适当地扩展。
优选上述凹部为越靠近底面直径越小的圆锥台形状。采用这种结构,可以将从上述发光元件向其周围发出的红外线,高效率地向上述凹部的上方(与底面相反的方向)反射,因此,可以增加光的射出量,同时可以更好地提高其指向性。
附图说明
图1是表示本发明红外线数据通信模块的一个例子的简要立体图
图2是沿着图1的II-II线的截面图
图3是图2所示的红外线数据通信模块的主要部分的放大截面图。
图4是表示现有技术的红外线数据通信模块的一个例子的截面图。
具体实施方式
以下,参照附图,对本发明的优选实施方式进行详细说明。
图1和图2所示的红外线数据通信模块1包括:基板2、产生红外线的发光元件3、可以感受接收红外线光的受光元件4、IC芯片5、以及密封树脂封装6。将发光元件3、受光元件4和IC芯片5安装在基板2的表面2a上。由树脂封装6来覆盖发光元件3、受光元件4、以及IC芯片5。
基板2是由玻璃环氧树脂等制成的绝缘基板,其平面视图为长矩形形状。在基板2的表面2a上形成有将电力供给发光元件3、受光元件4和IC芯片5以及进行信号的输入输出用的线路图形(图中省略表示)。在基板2的背面形成有表面安装时所利用的多个端子(图示省略)。通过在基板2的侧面形成的多个膜状导体20,将上述多个端子和表面2a的线路图形连接。将各膜状导体20设置于半筒状的凹部21中,因此,膜状导体20不从基板2的侧面突出。
在基板2的表面2a上形成有上部开口状的凹部22,在该凹部22内配置有发光元件3。凹部22为越靠近底部直径越小的倒圆锥台形状,可以利用机械加工制成。此外,这样形成金属膜7,使得全部覆盖凹部22的底部和内周面。金属膜7具有覆盖凹部22的周围的凸缘70。
如图3所示,金属膜7包含多个层7a~7c。最下层7a例如由铜制成,它与上述线路图形的形成同时形成。最下层7a接地。中间层7b例如由镍制成,起着提高最上层(表层)7c与最下层7b的接合强度的作用。最上层7c例如由耐蚀性优良的金制成。
在图示的实施例中,发光元件3为红外线LED,例如利用通过导电性粘接剂与金属膜粘接,而在该发光元件3的底面上形成阴极,该阴极与金属膜7导通。在该发光元件3的上面形成阳极,该阳极通过导线W与上述线路图形的衬垫部29连接。该发光元件3的高度为比金属膜7的凸缘70的上面低的高度,因此,越过凹部22的开口而发光元件3不突出。在凹部22中形成有充填弹性率(弹性系数)比密封树脂封装6小,且柔软的硅树脂等而形成的缓冲体8。发光元件3被该缓冲体8所覆盖。缓冲体8具有红外线透过性。
受光元件4具有可以感受红外线的光电二极管。IC芯片5进行发光元件3的驱动或者从受光元件4输出的信号的放大等。密封树脂封装6例如由包含颜料的环氧树脂制成,对可见光没有透过性,而对红外线有透过性。密封树脂封装6具有用于集中从发光元件3向上方行进的红外线的第一透镜61和将从外部行进的红外线集中到受光元件4上用的第二透镜62。
在本实施方式的红外线数据通信模块1中,由于发光元件3被接地的金属膜7所包围,因此可以利用该金属膜7遮断从发光元件3产生的电磁干扰。因此,可以阻止上述电磁干扰到达IC芯片5,可以防止因电磁干扰引起的IC芯片5的误动作。特别是,由于发光元件3的高度是越过凹部22而不突出的高度,因此能够进一步可靠地防止从发光元件3向IC芯片5的电磁干扰的行进。
红外线不仅从发光元件3的上面,而且从发光元件3的各个侧面发出。从各个侧面出红外线,由金属膜7的表面向上方反射。因此,可增加透过密封树脂封装6的第一透镜61而向上方射出的红外线量。由于凹部22为越向底部直径越小的倒圆锥台形状,所以使红外线向着透镜61行进的效率好,此外,红外线的指向性也高。而且,由于金属膜7的最上层7C由金制成,红外线的反射率高,所以可以更好地增加红外线的射出量。
缓冲体8起到缓和上述应力的作用,使得发光元件3不直接接受从密封树脂封装6产生的应力。因此,可以保护发光元件3。此外,由于缓冲体8填充在凹部22中,所以,在红外线数据通信模块1的制造过程中,当将形成缓冲体8的树脂,以液体状态滴落在发光元件3上时,该树脂滞留在凹部22中,而不会在基板2上大面积地扩展。
其中,本发明的光数据通信模块的具体结构,不限于上述实施方式,可对其自由地作各种设计和变更。例如,金属膜7也可以不是上述三层的结构,而是包含不同数目的金属层的层叠结构或者单层结构。此外,构成金属膜7的各个金属层的具体的材质没有限制。收容配置发光元件3的凹部22的具体形状或者尺寸也没有限制。
Claims (5)
1.一种光数据通信模块,其特征在于,包括:
基板、发光元件、受光元件、IC芯片和密封树脂封装,将所述发光元件、受光元件和IC芯片放置在所述基板上,并由所述密封树脂封装所覆盖,其中,
在所述基板上形成有内面由接地的金属膜所覆盖的凹部,并且将所述发光元件配置在该凹部内。
2.如权利要求1所述的红外线数据通信模块,其特征在于:
所述发光元件为红外线发光元件,所述受光元件为红外线受光元件。
3.如权利要求1所述的红外线数据通信模块,其特征在于:
所述金属膜的最上面的高度比所述发光元件的高度高。
4.如权利要求1所述的红外线数据通信模块,其特征在于:
将弹性率比所述树脂封装小的树脂充填在所述凹部中,并且利用该树脂来覆盖所述发光元件。
5.如权利要求1所述的红外线数据通信模块,其特征在于:
所述凹部为越靠近底面直径越小的圆锥台形状。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP429322/2003 | 2003-12-25 | ||
JP2003429322A JP4426279B2 (ja) | 2003-12-25 | 2003-12-25 | 赤外線データ通信モジュール |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1898805A true CN1898805A (zh) | 2007-01-17 |
Family
ID=34736300
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2004800387856A Pending CN1898805A (zh) | 2003-12-25 | 2004-12-21 | 光数据通信模块 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20070194339A1 (zh) |
JP (1) | JP4426279B2 (zh) |
KR (1) | KR100824155B1 (zh) |
CN (1) | CN1898805A (zh) |
TW (1) | TWI250660B (zh) |
WO (1) | WO2005064689A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106449599A (zh) * | 2016-11-30 | 2017-02-22 | 南通沃特光电科技有限公司 | 一种天线装置的制造方法 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100945621B1 (ko) * | 2005-03-07 | 2010-03-04 | 로무 가부시키가이샤 | 광 통신 모듈 및 그 제조 방법 |
JP2007035810A (ja) * | 2005-07-26 | 2007-02-08 | Rohm Co Ltd | 光通信モジュール |
JP2006253297A (ja) * | 2005-03-09 | 2006-09-21 | Sharp Corp | 光半導体装置、電子機器および光半導体装置の製造方法 |
JP4744998B2 (ja) * | 2005-09-14 | 2011-08-10 | ローム株式会社 | 光通信モジュール |
JP5013472B2 (ja) * | 2007-10-30 | 2012-08-29 | パナソニック電工Sunx株式会社 | 光電センサ |
US9496247B2 (en) * | 2013-08-26 | 2016-11-15 | Optiz, Inc. | Integrated camera module and method of making same |
EP3168874B1 (en) | 2015-11-11 | 2020-09-30 | Lipac Co., Ltd. | Semiconductor chip package with optical interface |
DE102016118996A1 (de) | 2016-10-06 | 2018-04-12 | Osram Opto Semiconductors Gmbh | Herstellung von sensoren |
KR102040116B1 (ko) * | 2017-12-28 | 2019-11-05 | 주식회사 지파랑 | 광 인터페이스를 가지는 반도체 칩 패키지 |
JP7363806B2 (ja) * | 2018-11-12 | 2023-10-18 | ソニーグループ株式会社 | 生体情報計測装置 |
KR20210155382A (ko) * | 2020-06-15 | 2021-12-22 | 주식회사 라이팩 | 반도체 패키지 및 반도체 패키지 제조 방법 |
CN111830647A (zh) * | 2020-06-30 | 2020-10-27 | 宁波群芯微电子有限责任公司 | 光电耦合装置 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62194686A (ja) * | 1986-02-20 | 1987-08-27 | Nec Corp | 光結合半導体装置 |
US5049978A (en) * | 1990-09-10 | 1991-09-17 | General Electric Company | Conductively enclosed hybrid integrated circuit assembly using a silicon substrate |
JPH0563239A (ja) * | 1991-08-29 | 1993-03-12 | Mitsubishi Cable Ind Ltd | Led表示装置 |
US6034712A (en) * | 1996-06-26 | 2000-03-07 | Brother Kogyo Kabushiki Kaisha | Exposure apparatus and image forming machine including it |
JP3425310B2 (ja) * | 1996-11-25 | 2003-07-14 | シャープ株式会社 | 発光/受光装置 |
JP3851418B2 (ja) * | 1997-06-13 | 2006-11-29 | シチズン電子株式会社 | 赤外線データ通信モジュール |
JP3948789B2 (ja) * | 1997-07-02 | 2007-07-25 | シチズン電子株式会社 | 赤外線データ通信モジュール |
US6169295B1 (en) * | 1998-05-29 | 2001-01-02 | Maxim Integrated Products, Inc. | Infrared transceiver module and method for making same |
JP3637809B2 (ja) * | 1999-05-26 | 2005-04-13 | 松下電工株式会社 | 赤外線データ通信モジュール |
US6590152B1 (en) * | 1999-08-26 | 2003-07-08 | Rohm Co., Ltd. | Electromagnetic shield cap and infrared data communication module |
JP2001177118A (ja) * | 1999-12-17 | 2001-06-29 | Sharp Corp | 赤外線データ通信モジュール |
US6342670B1 (en) * | 2000-09-19 | 2002-01-29 | Lite-On Electronics, Inc. | Photoelectric module device |
US6712529B2 (en) * | 2000-12-11 | 2004-03-30 | Rohm Co., Ltd. | Infrared data communication module and method of making the same |
JP2002176184A (ja) * | 2000-12-11 | 2002-06-21 | Rohm Co Ltd | 赤外線データ通信モジュールおよびその製造方法 |
JP2002261299A (ja) * | 2000-12-25 | 2002-09-13 | Sharp Corp | 赤外線データ通信モジュール |
JP2002324916A (ja) * | 2001-04-24 | 2002-11-08 | Rohm Co Ltd | 赤外線データ通信モジュールおよびその製造方法 |
JP3948650B2 (ja) * | 2001-10-09 | 2007-07-25 | アバゴ・テクノロジーズ・イーシービーユー・アイピー(シンガポール)プライベート・リミテッド | 発光ダイオード及びその製造方法 |
JP2003234498A (ja) * | 2002-02-08 | 2003-08-22 | Sharp Corp | 赤外線データ通信モジュール |
JP2003244077A (ja) * | 2002-02-18 | 2003-08-29 | Sharp Corp | リモコン送信機能付き赤外線通信用モジュール |
-
2003
- 2003-12-25 JP JP2003429322A patent/JP4426279B2/ja not_active Expired - Fee Related
-
2004
- 2004-12-21 KR KR1020067013982A patent/KR100824155B1/ko not_active IP Right Cessation
- 2004-12-21 CN CNA2004800387856A patent/CN1898805A/zh active Pending
- 2004-12-21 US US10/584,116 patent/US20070194339A1/en not_active Abandoned
- 2004-12-21 WO PCT/JP2004/019090 patent/WO2005064689A1/ja active Application Filing
- 2004-12-22 TW TW093140033A patent/TWI250660B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106449599A (zh) * | 2016-11-30 | 2017-02-22 | 南通沃特光电科技有限公司 | 一种天线装置的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200525772A (en) | 2005-08-01 |
WO2005064689A1 (ja) | 2005-07-14 |
US20070194339A1 (en) | 2007-08-23 |
JP2005191189A (ja) | 2005-07-14 |
TWI250660B (en) | 2006-03-01 |
JP4426279B2 (ja) | 2010-03-03 |
KR20060110354A (ko) | 2006-10-24 |
KR100824155B1 (ko) | 2008-04-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1196203C (zh) | 发光二极管 | |
US10185866B2 (en) | Optical fingerprint sensor package | |
EP2551927B1 (en) | Light emitting device package | |
KR100732267B1 (ko) | 선형 광원장치 및 그 제조방법, 그리고 면 발광장치 | |
CN1898805A (zh) | 光数据通信模块 | |
US6624491B2 (en) | Diode housing | |
CN101587933B (zh) | 发光二极管的晶圆级封装结构及其制造方法 | |
JP5730680B2 (ja) | Led発光装置とその製造方法 | |
US6661167B2 (en) | LED devices | |
US20030155624A1 (en) | Optoelectronic semiconductor component | |
CN1557014A (zh) | 具有成形衬底的发光二极管的结合以及用于结合具有成形衬底的发光二极管的夹头 | |
CN101315963A (zh) | 半导体发光装置 | |
CN1880836A (zh) | 具有发光二极管的背光单元及其制造方法 | |
EP3066698B1 (en) | Substrate for led with total-internal reflection layer surrounding led | |
EP1537603A2 (en) | Power surface mount light emitting die package | |
KR20150092423A (ko) | 발광소자 패키지 | |
CN103682068A (zh) | 发光装置 | |
CN110085578B (zh) | 具有底部反射体的封装led透镜 | |
KR101813495B1 (ko) | 발광소자 패키지 | |
JPH11251644A (ja) | 半導体発光装置 | |
CN1820379A (zh) | 发光二极管灯 | |
CN104300062A (zh) | 发光器件 | |
TW201044651A (en) | Semiconductor light emitting device | |
US20070252167A1 (en) | Surface mounting optoelectronic device | |
JP2003209293A (ja) | 発光ダイオード |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C12 | Rejection of a patent application after its publication | ||
RJ01 | Rejection of invention patent application after publication |
Open date: 20070117 |