TWI250660B - Optical data communication module - Google Patents
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- TWI250660B TWI250660B TW093140033A TW93140033A TWI250660B TW I250660 B TWI250660 B TW I250660B TW 093140033 A TW093140033 A TW 093140033A TW 93140033 A TW93140033 A TW 93140033A TW I250660 B TWI250660 B TW I250660B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
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- H01L23/00—Details of semiconductor or other solid state devices
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
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- H01L2924/3025—Electromagnetic shielding
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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Description
1250660 九、發明說明: 【發明所屬之技術領域】 本發明係有關於_ 動電話等的光資訊通訊 訊通訊模組。 種安裝於個人電腦、其周邊機器或行 模組’特別是有關於一種紅外線光資 【先前技術】 第4圖表示習知的紅外線資訊通訊模組的一例。圖示的 紅外線通訊模組9包括一基板9〇,在該基板9〇的表面9“ 實裝有發光元件92、受光元件93以及1C晶片94,而且該 等元件係以密封樹脂封裝91所覆蓋。樹脂封裝91具有一第 -透鏡部91a以及一第二透鏡部91b,第一透鏡部9u將來 自發光元件92的紅外線聚光而提高指向性,第二透鏡部91匕 將來自外部的紅外線集中於受光元件93而提高受光感度。W 晶片94進行發光元件92的驅動控制,以及進行訊號處理, 此吼號處理係根據受光元件93的訊號將既定的訊號輪出至 外部。此種紅外線資訊通訊模組揭露於日本專 十 W開 2 002-76427號公報(以下稱專利文獻一)。 專利文獻一 特開2002-76427號公報 在上述之紅外線資訊通訊模組9中,在發光元件92被 驅動之際,此發光元件92會產生電磁雜訊。一方面, 7 ^ 在此 發光元件92的附近,配置有1C晶片94。因此,發光元件 92產生的電磁雜訊會對jc晶片產生不良的影響,而有使π 晶片94產生誤動作之虞。 又,為了 一般紅外線資訊通訊模組的省電力化,並提言 2215-6760-PF 5 1250660 通訊性能,希望從發光元件於既定方向行進的紅外線的量變 多。對此,在上述紅外線資訊通訊模組9中,從發光元件^ 的側面向該發光元件92的周邊發射的紅外線不會朝透鏡部2 9 1 a行進,因而產生浪費,對於這一點是有改進的空間。P 【發明内容】 有鑑於此,本發明提供一種光資訊通訊模組,特別是— 種紅外線資訊通訊模組,減低因發光元件所產生的電磁雜訊 而使1C晶片產生錯誤動作,同時減少發光元件之散亂的多 外線的量。 ' 一本發明所提供的光資訊通訊模組包括基板、發光元件、 受光兀件、1C晶片以及密封樹脂封裝,上述發光元件、受 元件以及1C晶片係搭載於上述基板上,而且由上述密 脂封裝所包覆而構成。在上述基板上,形成一凹部,其内面 由接地的金屬膜所覆蓋,而且在該凹部中配置上=
件。 4知尤7L 在此構造中,上述金屬膜係接地’發揮電磁遮蔽的功 能’上述發光元件所產生的電磁雜訊被此金屬膜遮蔽,而益 法達到晶片。因此,可防止因發光元件所產生的電磁雜 訊而造成的IC晶片錯誤的動作。又,上述發光元件 的光可由上述金屬肢射於既定的方向,可㈣在發光 的周圍部光線的散射。藉此,從發光元件向樹脂封裝外部的 既定方向射出的光量變多,可省電並提高通訊性能。
在本發明之較佳實施型態中,上述發光元件為紅外線笋 光元件,上述受光元件為紅外線受光元件。 X
2215-6760-PF 6 1250660 較佳的是,上述金屬膜之最上部的高度比上述發光元件 的咼度鬲。在此構造中,可確實防止從發光元件向ic晶片 的電磁雜訊。 較佳的是,上述凹部係以比上述樹脂封裝彈性係數小的 树月曰充填,而且該樹脂覆蓋上述發光元件。在此構造中,避 免上述樹脂封裝直接對上述發光元件產生應力作用,可保護 上述發光元件。又,上述凹部充填樹脂,該樹脂不會流到上 述發光元件的周圍。 車乂佳的疋,上述凹部為底面直徑較小的圓錐台形狀。在 ^構造中,從上述發光元件向周圍發出的紅外線可向上述凹 部的上方(與底面相反的方向)有效地反射,光的射出量變 夕’同時指向性也提高。 L貫施方式】 _以下’針對本發明之最佳實施型態,並參照圖式做具 的說明。 〃 第1圖及第2圖所示的紅外線資訊通訊模組1包括其 2、發射紅外線的私亦 、 又先7L件3、可感知紅外線的受光 1C晶片5以及密封樹 4 山对树月曰封裝6。發光元件3、受 及1C晶片5係實萝於1』 1千4 、、基板2的表面2a。樹脂封裝6覆蓋 光…、受光元件4以及IC晶片5。 覆盍 基板2為玻璃環氧樹脂等製成的絕緣基板 矩形。在基板2的表而? ^上 十面觀之 面2 a形成配線圖案(未圖示) 圖案係用於發光元件λ 、☆丄 J此配 凡件3、X光元件4以及1C晶片5的 給以及訊號輸入輪中。—*, 旧电刀 在基板2的裡面形成用於面實带的
2215-6760-PF 1250660 數個纟而子(未圖示),經由基板2側面的複數個膜狀導體2 〇, 上述複數個端子與表面2a的配線圖案連接。各膜狀導體 係設於半筒狀的凹部21,因此膜狀導體2〇不會從基板2的 側面突出。 在基板2的表面2a形成上部開口狀的凹部22,在該凹 部22内配置有發光元件3。凹部22為底部直徑較小的倒圓 錐口幵^/狀可藉由機械加工而形成。為了覆蓋凹部22的底 面及内周面的全體,形成金屬g 7。金屬膜7具有覆蓋凹部 22周圍的邊緣部7〇。 如第3圖所示,金屬膜7含有複數層、〜π。最下層” 係由銅製成,與上述配線圖案同時形成。最下層^係接地。 中間層7b係由鎳製成,有提高面向中間層7b的最上層(表 層)7c的接口強度的效果。最上層&係由耐蝕性佳的金所 製成。 在圖不的實施型態中,發光元件3為紅外線,經由 導電性黏著劑黏著於金屬膜7,藉此在該發光元件3的底面 形成陰極’該陰極係與金屬膜7導通。在該發光元件3的上 面形成陽極,該陽極與上述配線圖案的凸塊部29經由導線 連接"玄毛光元件3的高度比金屬Μ 7的邊緣部70的上面 的高度低,而越過凹部22的開口部使發光元件3不會露出。 在凹部22中以彈性係數比密封樹脂封裝6小、較軟的矽樹 脂等充填而形成緩衝體8。發光元件3係被此緩衝體8所覆 盍。緩衝體8係具有紅外線穿透性。 乂又光元件4包括可感知紅外線的光電二極體。IC晶片5 係驅動發光兀件3以及將受光元件4的輸出訊號放大。密封
2215-6760-PF Q 1250660 樹脂封裝6由在丨丄曰1 ^ 例如具有顏料的環氧樹脂形成,對於可見光不 八牙透〖生,而對於紅外線具有穿透性。密封樹脂封裝ό具 有從發光元株^ L + 从 ^ 上方進行紅外線聚光的第一透鏡6 1以及將 攸外邛仃進的紅外線聚光於受光元件4上的第二透鏡62。 在本實施型態的紅外線資訊通訊模組丨中,由於發光元 牛系由接地的金屬m 7所包圍’發光元件3所產生的電磁 雜訊被金屬膜7遮斷。因此阻止了上述電磁雜訊到達IC晶 片5可防止因電磁雜訊所造成# 1C晶片5的錯誤動作。特 別是發光元件3由於越過凹部22而不會露出,得以相當確寺 實地防止發光元件3對於1C晶片5的電磁雜訊的行進。 紅外線不僅從發光元件3的上面,亦從發光元件3的各 側面發射出來。從各側面發射的紅外線,在金屬膜7的表面 向上方反射。因此’穿透密封樹脂封裝6的第一透鏡61向 上方發射的紅外線的量可變多。凹部22由於是底部 小的倒圓錐台形狀’紅外線向透鏡61行進的效率良好,又 紅外線的指向性也變高。甚至,金屬膜7的最上層&係由 金所形成,由於紅外線的反射率高,紅外線的“量變多。 緩衝體8由於# | iι 获6的靡力* ' 接承受來自密封樹脂封 “力,有緩和上述應力的效果。因此,可以保護發光 -件3。》’緩衝體8由於充填於凹部22,在紅外線 訊模組^的製造過程中,當形成緩衝體8的樹脂以液態 到發光元件3上時’該樹脂滞留於…,在基板2上不合 擴大面積。 曰 而:’本發明之光資訊通訊模組的具體構造,並不限於 上述的實施型態’各種設計可自由變更。例如金屬膜7不限 9
2215-6760-PF 1250660 -t iii 沾一 、 K的二層構造,不同數目之金屬層的多層構造或單展 "°又構成金屬膜7的各金屬層的具體材質並無限定。 至谷納發光元件3的凹部22具體的形狀及尺寸也無限定。 【圖式簡單說明】 第1圖為本發明之紅外線資訊通訊模組的一例的概略 體圖。 立 第2圖為第1圖中沿ΙΙ-ΙΙ線的剖視圖。 第3圖為第2圖中紅外線資訊通訊模組的重要部分的放 大剖視圖。 第4圖為習知的紅外線資訊通訊模組的一例的剖視圖。 芏要元件符號 ;2〜基板;2a〜表面;3 金屬膜 1〜紅外線資訊通訊模組 光兀件;4〜受光元件;6〜密封樹脂封裝; 〜&〜金屬層;8〜缓衝體,· 9〜紅外線通訊模組;二〜 導體;21〜凹部;22〜凹部;29〜凸塊部;61〜第一透 62〜第二透鏡;7〇〜邊緣部;9〇〜基板;9〇a〜表面· 始封樹脂封裝;91a〜第一透鏡部;91b〜篦-、泰& ^ 弟一透鏡部; &无元件;93〜受光元件;94〜1C晶片。 2215-6760-pf 10
Claims (1)
1250660 十、申請專利範圍: 1. 一種光資訊通訊模組,包括:基板、發光元件、受光元件、 ic晶片以及密封樹脂封裝,上述發光元件、受光元件以 及1C晶片係搭載於上述基板上,而且由上述密封樹脂封 裝所包覆’其中在上述基板上,形成一凹部,其内面由接 地的金屬膜所覆蓋,而且在該凹部中配置上述發光元件。 2·如申請專利範圍第丨項所述之光資訊通訊模組,其中上述 發光元件為紅外線發光元件,上述受光元件為紅外線光受 光元件。 3·如申請專利範圍第丨項所述之光資訊通訊模組,其中上述 金屬膜隶上面的高度比上述發光元件的高度高。 4·如申請專利範圍第1項所述之光資訊通訊模組,其中在上 述凹部中’以彈性係數比上述樹脂封裝小的樹脂做充填, 而且该樹脂覆蓋上述發光元件。 5·如申請專利範圍第丨項所述之光資訊通訊模組,其中上述 凹部為越接近底面其直徑漸小的圓錐台形狀。 2215-6760-PF 11
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JP4744998B2 (ja) * | 2005-09-14 | 2011-08-10 | ローム株式会社 | 光通信モジュール |
JP5013472B2 (ja) * | 2007-10-30 | 2012-08-29 | パナソニック電工Sunx株式会社 | 光電センサ |
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KR102040116B1 (ko) * | 2017-12-28 | 2019-11-05 | 주식회사 지파랑 | 광 인터페이스를 가지는 반도체 칩 패키지 |
CN113015485B (zh) * | 2018-11-12 | 2024-08-20 | 索尼集团公司 | 生物信息测量装置 |
CN115867828A (zh) * | 2020-06-15 | 2023-03-28 | 利派克株式会社 | 半导体封装件及制造半导体封装件的方法 |
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CN114883316A (zh) * | 2022-05-10 | 2022-08-09 | 青岛青软晶尊微电子科技有限公司 | 基于无线高速总线的新型封装系统芯片npsc架构 |
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JP4426279B2 (ja) | 2010-03-03 |
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JP2005191189A (ja) | 2005-07-14 |
US20070194339A1 (en) | 2007-08-23 |
CN1898805A (zh) | 2007-01-17 |
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KR20060110354A (ko) | 2006-10-24 |
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