CN1883051A - 具有改善的安全工作区域性能的igbt阴极设计 - Google Patents
具有改善的安全工作区域性能的igbt阴极设计 Download PDFInfo
- Publication number
- CN1883051A CN1883051A CNA200480033652XA CN200480033652A CN1883051A CN 1883051 A CN1883051 A CN 1883051A CN A200480033652X A CNA200480033652X A CN A200480033652XA CN 200480033652 A CN200480033652 A CN 200480033652A CN 1883051 A CN1883051 A CN 1883051A
- Authority
- CN
- China
- Prior art keywords
- igbt
- base
- channel region
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000003550 marker Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B67—OPENING, CLOSING OR CLEANING BOTTLES, JARS OR SIMILAR CONTAINERS; LIQUID HANDLING
- B67D—DISPENSING, DELIVERING OR TRANSFERRING LIQUIDS, NOT OTHERWISE PROVIDED FOR
- B67D1/00—Apparatus or devices for dispensing beverages on draught
- B67D1/08—Details
- B67D1/12—Flow or pressure control devices or systems, e.g. valves, gas pressure control, level control in storage containers
- B67D1/14—Reducing valves or control taps
- B67D1/1405—Control taps
- B67D1/1411—Means for controlling the build-up of foam in the container to be filled
- B67D1/1422—Means for controlling the build-up of foam in the container to be filled comprising foam avoiding means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03405816A EP1531497A1 (en) | 2003-11-17 | 2003-11-17 | IGBT cathode design with improved safe operating area capability |
EP03405816.4 | 2003-11-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1883051A true CN1883051A (zh) | 2006-12-20 |
CN100499159C CN100499159C (zh) | 2009-06-10 |
Family
ID=34429619
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200480033652XA Active CN100499159C (zh) | 2003-11-17 | 2004-11-16 | 具有改善的安全工作区域性能的igbt阴极设计 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7446376B2 (zh) |
EP (2) | EP1531497A1 (zh) |
JP (1) | JP2007511913A (zh) |
CN (1) | CN100499159C (zh) |
WO (1) | WO2005048351A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100477270C (zh) * | 2007-02-14 | 2009-04-08 | 上海富华微电子有限公司 | 采用psg掺杂技术的vdmos、igbt功率器件及其制造工艺 |
CN101893677A (zh) * | 2010-07-07 | 2010-11-24 | 佛山市蓝箭电子有限公司 | 三极管在反向偏压安全工作区下的测试装置及测试方法 |
CN102934231A (zh) * | 2010-06-17 | 2013-02-13 | Abb技术有限公司 | 功率半导体器件 |
CN111627987A (zh) * | 2020-05-29 | 2020-09-04 | 东莞南方半导体科技有限公司 | 一种Fin沟道结构SiC场效应晶体管器件 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090096027A1 (en) * | 2007-10-10 | 2009-04-16 | Franz Hirler | Power Semiconductor Device |
GB0922339D0 (en) * | 2009-12-21 | 2010-02-03 | Mcminn Derek J W | Acetabular cup prothesis and introducer thereof |
US8232156B2 (en) * | 2010-11-04 | 2012-07-31 | International Business Machines Corporation | Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance |
WO2012124784A1 (ja) | 2011-03-16 | 2012-09-20 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP5902949B2 (ja) * | 2012-01-05 | 2016-04-13 | 株式会社 日立パワーデバイス | 半導体装置 |
WO2014203317A1 (ja) * | 2013-06-17 | 2014-12-24 | 株式会社日立製作所 | 半導体装置およびその製造方法、並びに電力変換装置 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4443931A (en) * | 1982-06-28 | 1984-04-24 | General Electric Company | Method of fabricating a semiconductor device with a base region having a deep portion |
US4809047A (en) * | 1983-09-06 | 1989-02-28 | General Electric Company | Insulated-gate semiconductor device with improved base-to-source electrode short and method of fabricating said short |
US4672407A (en) * | 1984-05-30 | 1987-06-09 | Kabushiki Kaisha Toshiba | Conductivity modulated MOSFET |
JPH0612827B2 (ja) * | 1985-02-28 | 1994-02-16 | 株式会社東芝 | 導電変調型mosfet |
US4896196A (en) * | 1986-11-12 | 1990-01-23 | Siliconix Incorporated | Vertical DMOS power transistor with an integral operating condition sensor |
JPH0783122B2 (ja) * | 1988-12-01 | 1995-09-06 | 富士電機株式会社 | 半導体装置の製造方法 |
JP2808871B2 (ja) * | 1990-09-17 | 1998-10-08 | 富士電機株式会社 | Mos型半導体素子の製造方法 |
US5321281A (en) * | 1992-03-18 | 1994-06-14 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate semiconductor device and method of fabricating same |
JP2949001B2 (ja) * | 1992-03-18 | 1999-09-13 | 三菱電機株式会社 | ゲート絶縁型半導体装置及びその製造方法 |
GB9313843D0 (en) * | 1993-07-05 | 1993-08-18 | Philips Electronics Uk Ltd | A semiconductor device comprising an insulated gate field effect transistor |
US5703383A (en) * | 1995-04-11 | 1997-12-30 | Kabushiki Kaisha Toshiba | Power semiconductor device |
JPH10178174A (ja) * | 1996-10-18 | 1998-06-30 | Hitachi Ltd | 半導体装置及びそれを使った電力変換装置 |
US6080614A (en) * | 1997-06-30 | 2000-06-27 | Intersil Corp | Method of making a MOS-gated semiconductor device with a single diffusion |
JP4061711B2 (ja) * | 1998-06-18 | 2008-03-19 | 株式会社デンソー | Mosトランジスタ及びその製造方法 |
EP1058316A1 (en) * | 1999-06-04 | 2000-12-06 | STMicroelectronics S.r.l. | Power MOS transistor |
JP4568929B2 (ja) * | 1999-09-21 | 2010-10-27 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
JP4357753B2 (ja) * | 2001-01-26 | 2009-11-04 | 株式会社東芝 | 高耐圧半導体装置 |
EP1396030B1 (en) * | 2001-04-11 | 2011-06-29 | Silicon Semiconductor Corporation | Vertical power semiconductor device and method of making the same |
-
2003
- 2003-11-17 EP EP03405816A patent/EP1531497A1/en not_active Withdrawn
-
2004
- 2004-11-16 EP EP04797248.4A patent/EP1685599B1/en active Active
- 2004-11-16 WO PCT/CH2004/000691 patent/WO2005048351A1/en not_active Application Discontinuation
- 2004-11-16 JP JP2006540131A patent/JP2007511913A/ja active Pending
- 2004-11-16 US US10/579,837 patent/US7446376B2/en active Active
- 2004-11-16 CN CNB200480033652XA patent/CN100499159C/zh active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100477270C (zh) * | 2007-02-14 | 2009-04-08 | 上海富华微电子有限公司 | 采用psg掺杂技术的vdmos、igbt功率器件及其制造工艺 |
CN102934231A (zh) * | 2010-06-17 | 2013-02-13 | Abb技术有限公司 | 功率半导体器件 |
CN102934231B (zh) * | 2010-06-17 | 2016-02-17 | Abb技术有限公司 | 功率半导体器件 |
CN101893677A (zh) * | 2010-07-07 | 2010-11-24 | 佛山市蓝箭电子有限公司 | 三极管在反向偏压安全工作区下的测试装置及测试方法 |
CN111627987A (zh) * | 2020-05-29 | 2020-09-04 | 东莞南方半导体科技有限公司 | 一种Fin沟道结构SiC场效应晶体管器件 |
Also Published As
Publication number | Publication date |
---|---|
JP2007511913A (ja) | 2007-05-10 |
WO2005048351A1 (en) | 2005-05-26 |
CN100499159C (zh) | 2009-06-10 |
US7446376B2 (en) | 2008-11-04 |
US20070158686A1 (en) | 2007-07-12 |
EP1685599B1 (en) | 2015-08-19 |
EP1531497A1 (en) | 2005-05-18 |
EP1685599A1 (en) | 2006-08-02 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180517 Address after: Baden, Switzerland Patentee after: ABB Switzerland Co.,Ltd. Address before: Zurich Patentee before: ABB TECHNOLOGY Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20210512 Address after: Baden, Switzerland Patentee after: ABB grid Switzerland AG Address before: Baden, Switzerland Patentee before: ABB Switzerland Co.,Ltd. |
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TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: Swiss Baden Patentee after: Hitachi energy Switzerland AG Address before: Swiss Baden Patentee before: ABB grid Switzerland AG |
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CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231222 Address after: Zurich, SUI Patentee after: Hitachi Energy Co.,Ltd. Address before: Swiss Baden Patentee before: Hitachi energy Switzerland AG |
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TR01 | Transfer of patent right |