CN1677664A - 静电放电保护器件及其制造方法 - Google Patents
静电放电保护器件及其制造方法 Download PDFInfo
- Publication number
- CN1677664A CN1677664A CNA2005100697257A CN200510069725A CN1677664A CN 1677664 A CN1677664 A CN 1677664A CN A2005100697257 A CNA2005100697257 A CN A2005100697257A CN 200510069725 A CN200510069725 A CN 200510069725A CN 1677664 A CN1677664 A CN 1677664A
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- CN
- China
- Prior art keywords
- semiconductor substrate
- field oxide
- drift region
- fate
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 230000001012 protector Effects 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 238000002347 injection Methods 0.000 claims description 12
- 239000007924 injection Substances 0.000 claims description 12
- 238000005468 ion implantation Methods 0.000 claims description 12
- 230000015556 catabolic process Effects 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000008485 antagonism Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Images
Classifications
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- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
- A47J47/00—Kitchen containers, stands or the like, not provided for in other groups of this subclass; Cutting-boards, e.g. for bread
- A47J47/005—Cutting boards
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
- A47J43/00—Implements for preparing or holding food, not provided for in other groups of this subclass
- A47J43/25—Devices for grating
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
- A47J47/00—Kitchen containers, stands or the like, not provided for in other groups of this subclass; Cutting-boards, e.g. for bread
- A47J47/16—Stands, or holders for kitchen articles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Food Science & Technology (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR18063/04 | 2004-03-17 | ||
KR18063/2004 | 2004-03-17 | ||
KR1020040018063A KR100645193B1 (ko) | 2004-03-17 | 2004-03-17 | 정전기 방전 보호 소자 및 그 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1677664A true CN1677664A (zh) | 2005-10-05 |
CN1677664B CN1677664B (zh) | 2010-06-09 |
Family
ID=34988764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005100697257A Active CN1677664B (zh) | 2004-03-17 | 2005-03-17 | 静电放电保护器件及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7081394B2 (zh) |
KR (1) | KR100645193B1 (zh) |
CN (1) | CN1677664B (zh) |
TW (1) | TWI358082B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103199090A (zh) * | 2013-03-31 | 2013-07-10 | 无锡中星微电子有限公司 | 静电保护电路及其电池保护电路 |
CN104299963A (zh) * | 2014-09-30 | 2015-01-21 | 中航(重庆)微电子有限公司 | 一种mos静电保护结构及保护方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100779401B1 (ko) * | 2006-08-29 | 2007-11-23 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 그 제조 방법 |
US8125044B2 (en) * | 2007-10-26 | 2012-02-28 | Hvvi Semiconductors, Inc. | Semiconductor structure having a unidirectional and a bidirectional device and method of manufacture |
US7919801B2 (en) * | 2007-10-26 | 2011-04-05 | Hvvi Semiconductors, Inc. | RF power transistor structure and a method of forming the same |
US8133783B2 (en) * | 2007-10-26 | 2012-03-13 | Hvvi Semiconductors, Inc. | Semiconductor device having different structures formed simultaneously |
KR101413651B1 (ko) * | 2008-05-28 | 2014-07-01 | 삼성전자주식회사 | 트랜지스터를 구비한 반도체 소자 및 그 제조 방법 |
KR101145786B1 (ko) | 2009-12-30 | 2012-05-16 | 에스케이하이닉스 주식회사 | 정전기 방전 보호 장치 |
US10032765B1 (en) | 2017-05-18 | 2018-07-24 | Globalfoundries Singapore Pte. Ltd. | Integrated circuits with electrostatic discharge protection and methods for producing the same |
US10453836B2 (en) | 2017-08-17 | 2019-10-22 | Globalfoundries Singapore Pte. Ltd. | High holding high voltage (HHHV) FET for ESD protection with modified source and method for producing the same |
JP2022056787A (ja) * | 2020-09-30 | 2022-04-11 | ラピスセミコンダクタ株式会社 | 静電気保護素子及び半導体装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5760448A (en) * | 1993-12-27 | 1998-06-02 | Sharp Kabushiki Kaisha | Semiconductor device and a method for manufacturing the same |
US5670814A (en) * | 1996-06-03 | 1997-09-23 | Winbond Electronics Corporation | Electrostatic discharge protection circuit triggered by well-coupling |
US5960275A (en) * | 1996-10-28 | 1999-09-28 | Magemos Corporation | Power MOSFET fabrication process to achieve enhanced ruggedness, cost savings, and product reliability |
US5925910A (en) * | 1997-03-28 | 1999-07-20 | Stmicroelectronics, Inc. | DMOS transistors with schottky diode body structure |
DE69841732D1 (de) * | 1997-05-13 | 2010-08-05 | St Microelectronics Srl | Verfahren zur selektiven Herstellung von Salizid über aktiven Oberflächen von MOS-Vorrichtungen |
KR100528777B1 (ko) | 1998-10-27 | 2006-08-30 | 주식회사 하이닉스반도체 | 정전기 방전 회로_ |
US6242780B1 (en) * | 1999-10-22 | 2001-06-05 | United Microelectronics Corp. | Electrostatic discharge protection circuit |
US6144538A (en) * | 1999-12-20 | 2000-11-07 | United Microelectronics Corp. | High voltage MOS transistor used in protection circuits |
US6492678B1 (en) * | 2000-05-03 | 2002-12-10 | Linear Technology Corporation | High voltage MOS transistor with gate extension |
KR100735629B1 (ko) | 2001-06-29 | 2007-07-04 | 매그나칩 반도체 유한회사 | 디지털/아날로그 혼합 모드 ic의 정전기 방전 보호 회로 |
US6593621B2 (en) * | 2001-08-23 | 2003-07-15 | Micrel, Inc. | LDMOS field effect transistor with improved ruggedness in narrow curved areas |
JP2003197791A (ja) * | 2001-12-28 | 2003-07-11 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
-
2004
- 2004-03-17 KR KR1020040018063A patent/KR100645193B1/ko active IP Right Grant
-
2005
- 2005-03-16 TW TW094108011A patent/TWI358082B/zh active
- 2005-03-16 US US11/082,010 patent/US7081394B2/en active Active
- 2005-03-17 CN CN2005100697257A patent/CN1677664B/zh active Active
-
2006
- 2006-06-23 US US11/426,037 patent/US7361957B2/en active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103199090A (zh) * | 2013-03-31 | 2013-07-10 | 无锡中星微电子有限公司 | 静电保护电路及其电池保护电路 |
CN103199090B (zh) * | 2013-03-31 | 2016-06-01 | 无锡中感微电子股份有限公司 | 静电保护电路及其电池保护电路 |
CN104299963A (zh) * | 2014-09-30 | 2015-01-21 | 中航(重庆)微电子有限公司 | 一种mos静电保护结构及保护方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100645193B1 (ko) | 2006-11-10 |
US20050212050A1 (en) | 2005-09-29 |
US7081394B2 (en) | 2006-07-25 |
US7361957B2 (en) | 2008-04-22 |
KR20050093999A (ko) | 2005-09-26 |
TWI358082B (en) | 2012-02-11 |
TW200535968A (en) | 2005-11-01 |
CN1677664B (zh) | 2010-06-09 |
US20060244072A1 (en) | 2006-11-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201023 Address after: Han Guozhongqingbeidao Patentee after: Key Foundry Co.,Ltd. Address before: Han Guozhongqingbeidao Patentee before: MagnaChip Semiconductor, Ltd. |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: Republic of Korea Patentee after: Aisi Kaifang Semiconductor Co.,Ltd. Country or region after: Republic of Korea Address before: Han Guozhongqingbeidao Patentee before: Key Foundry Co.,Ltd. Country or region before: Republic of Korea |