CN1799145A - 具有边缘终止结构的半导体器件及其制造方法 - Google Patents
具有边缘终止结构的半导体器件及其制造方法 Download PDFInfo
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- CN1799145A CN1799145A CNA2004800148516A CN200480014851A CN1799145A CN 1799145 A CN1799145 A CN 1799145A CN A2004800148516 A CNA2004800148516 A CN A2004800148516A CN 200480014851 A CN200480014851 A CN 200480014851A CN 1799145 A CN1799145 A CN 1799145A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 230000002093 peripheral effect Effects 0.000 claims abstract description 12
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 3
- 239000003989 dielectric material Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 3
- 239000012774 insulation material Substances 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 description 7
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000002028 premature Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7817—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0312512.7 | 2003-05-31 | ||
GBGB0312512.7A GB0312512D0 (en) | 2003-05-31 | 2003-05-31 | Termination structures for semiconductor devices and the manufacture thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1799145A true CN1799145A (zh) | 2006-07-05 |
CN100485960C CN100485960C (zh) | 2009-05-06 |
Family
ID=9959100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800148516A Expired - Fee Related CN100485960C (zh) | 2003-05-31 | 2004-05-21 | 具有边缘终止结构的半导体器件及其制造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8344448B2 (zh) |
EP (1) | EP1634338A1 (zh) |
JP (1) | JP2006526286A (zh) |
KR (1) | KR20060040592A (zh) |
CN (1) | CN100485960C (zh) |
GB (1) | GB0312512D0 (zh) |
WO (1) | WO2004107448A1 (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101901807A (zh) * | 2010-06-23 | 2010-12-01 | 苏州硅能半导体科技股份有限公司 | 沟槽式肖特基势垒二极管整流器件及制造方法 |
CN101656213B (zh) * | 2008-08-19 | 2012-09-26 | 尼克森微电子股份有限公司 | 沟槽栅金属氧化物半导体场效应晶体管及其制作方法 |
CN103872099A (zh) * | 2012-12-13 | 2014-06-18 | 英飞凌科技股份有限公司 | 具有阶梯状边缘终端的半导体器件,以及用于制造半导体器件的方法 |
CN103975439A (zh) * | 2011-12-12 | 2014-08-06 | 科锐 | 用于降低的电流拥挤的双极性结型晶体管结构及制造其的方法 |
CN104106133A (zh) * | 2012-01-31 | 2014-10-15 | 英飞凌科技德累斯顿有限责任公司 | 具有有源漂移区带的半导体布置 |
CN114005885A (zh) * | 2021-10-29 | 2022-02-01 | 重庆平创半导体研究院有限责任公司 | 一种沟槽型肖特基二极管器件及其制作方法 |
WO2022028365A1 (zh) * | 2020-08-03 | 2022-02-10 | 华润微电子(重庆)有限公司 | 一种沟槽型肖特基二极管终端结构及其制作方法 |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI256676B (en) * | 2004-03-26 | 2006-06-11 | Siliconix Inc | Termination for trench MIS device having implanted drain-drift region |
DE102005002198B3 (de) * | 2005-01-17 | 2006-08-10 | Infineon Technologies Ag | Halbleiterbauteil mit Randbereich und Verfahren zu seiner Herstellung |
US7446374B2 (en) * | 2006-03-24 | 2008-11-04 | Fairchild Semiconductor Corporation | High density trench FET with integrated Schottky diode and method of manufacture |
JP5309428B2 (ja) * | 2006-05-01 | 2013-10-09 | 富士電機株式会社 | 半導体装置 |
US9252251B2 (en) | 2006-08-03 | 2016-02-02 | Infineon Technologies Austria Ag | Semiconductor component with a space saving edge structure |
DE102006036347B4 (de) | 2006-08-03 | 2012-01-12 | Infineon Technologies Austria Ag | Halbleiterbauelement mit einer platzsparenden Randstruktur |
DE102007030755B3 (de) | 2007-07-02 | 2009-02-19 | Infineon Technologies Austria Ag | Halbleiterbauelement mit einem einen Graben aufweisenden Randabschluss und Verfahren zur Herstellung eines Randabschlusses |
US8304314B2 (en) * | 2008-09-24 | 2012-11-06 | Semiconductor Components Industries, Llc | Method of forming an MOS transistor |
CN101924130A (zh) * | 2009-06-09 | 2010-12-22 | 上海韦尔半导体股份有限公司 | 具有沟槽式接触孔的沟槽式mosfet及其制备方法 |
JP2011100877A (ja) * | 2009-11-06 | 2011-05-19 | Toshiba Corp | 半導体装置及びその製造方法 |
JP5269015B2 (ja) * | 2010-09-08 | 2013-08-21 | 株式会社東芝 | 半導体装置及び半導体装置の製造方法 |
CN102569388B (zh) * | 2010-12-23 | 2014-09-10 | 无锡华润上华半导体有限公司 | 半导体器件及其制造方法 |
US8569842B2 (en) | 2011-01-07 | 2013-10-29 | Infineon Technologies Austria Ag | Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices |
US8455948B2 (en) | 2011-01-07 | 2013-06-04 | Infineon Technologies Austria Ag | Transistor arrangement with a first transistor and with a plurality of second transistors |
TWM435722U (en) * | 2012-03-22 | 2012-08-11 | Excelliance Mos Corp | Power MOSFET |
JP2013258327A (ja) * | 2012-06-13 | 2013-12-26 | Toshiba Corp | 半導体装置及びその製造方法 |
US8772865B2 (en) | 2012-09-26 | 2014-07-08 | Semiconductor Components Industries, Llc | MOS transistor structure |
US9570570B2 (en) * | 2013-07-17 | 2017-02-14 | Cree, Inc. | Enhanced gate dielectric for a field effect device with a trenched gate |
US9400513B2 (en) | 2014-06-30 | 2016-07-26 | Infineon Technologies Austria Ag | Cascode circuit |
JP6319151B2 (ja) * | 2015-03-23 | 2018-05-09 | 豊田合成株式会社 | 半導体装置および半導体装置の製造方法 |
JP6635900B2 (ja) * | 2016-09-13 | 2020-01-29 | 株式会社東芝 | 半導体装置 |
US20180097102A1 (en) * | 2016-09-30 | 2018-04-05 | Sanken Electric Co., Ltd. | Semiconductor device and method of manufacturing a semiconductor device |
KR102379155B1 (ko) * | 2020-09-03 | 2022-03-25 | 현대모비스 주식회사 | 전력 반도체 소자 및 그 제조 방법 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4468686A (en) * | 1981-11-13 | 1984-08-28 | Intersil, Inc. | Field terminating structure |
GB2151844A (en) | 1983-12-20 | 1985-07-24 | Philips Electronic Associated | Semiconductor devices |
US4992390A (en) * | 1989-07-06 | 1991-02-12 | General Electric Company | Trench gate structure with thick bottom oxide |
US5474946A (en) | 1995-02-17 | 1995-12-12 | International Rectifier Corporation | Reduced mask process for manufacture of MOS gated devices |
US5557127A (en) | 1995-03-23 | 1996-09-17 | International Rectifier Corporation | Termination structure for mosgated device with reduced mask count and process for its manufacture |
US5612567A (en) | 1996-05-13 | 1997-03-18 | North Carolina State University | Schottky barrier rectifiers and methods of forming same |
US5877528A (en) * | 1997-03-03 | 1999-03-02 | Megamos Corporation | Structure to provide effective channel-stop in termination areas for trenched power transistors |
US6204097B1 (en) | 1999-03-01 | 2001-03-20 | Semiconductor Components Industries, Llc | Semiconductor device and method of manufacture |
US20010001494A1 (en) | 1999-04-01 | 2001-05-24 | Christopher B. Kocon | Power trench mos-gated device and process for forming same |
US6413822B2 (en) * | 1999-04-22 | 2002-07-02 | Advanced Analogic Technologies, Inc. | Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer |
US6396090B1 (en) | 2000-09-22 | 2002-05-28 | Industrial Technology Research Institute | Trench MOS device and termination structure |
US6693011B2 (en) | 2001-10-02 | 2004-02-17 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Power MOS element and method for producing the same |
-
2003
- 2003-05-31 GB GBGB0312512.7A patent/GB0312512D0/en not_active Ceased
-
2004
- 2004-05-21 US US10/561,531 patent/US8344448B2/en active Active
- 2004-05-21 WO PCT/IB2004/001779 patent/WO2004107448A1/en active Application Filing
- 2004-05-21 KR KR1020057022923A patent/KR20060040592A/ko not_active Application Discontinuation
- 2004-05-21 EP EP04734327A patent/EP1634338A1/en not_active Withdrawn
- 2004-05-21 CN CNB2004800148516A patent/CN100485960C/zh not_active Expired - Fee Related
- 2004-05-21 JP JP2006508417A patent/JP2006526286A/ja not_active Withdrawn
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101656213B (zh) * | 2008-08-19 | 2012-09-26 | 尼克森微电子股份有限公司 | 沟槽栅金属氧化物半导体场效应晶体管及其制作方法 |
CN101901807A (zh) * | 2010-06-23 | 2010-12-01 | 苏州硅能半导体科技股份有限公司 | 沟槽式肖特基势垒二极管整流器件及制造方法 |
CN101901807B (zh) * | 2010-06-23 | 2011-11-09 | 苏州硅能半导体科技股份有限公司 | 沟槽式肖特基势垒二极管整流器件及制造方法 |
CN103975439A (zh) * | 2011-12-12 | 2014-08-06 | 科锐 | 用于降低的电流拥挤的双极性结型晶体管结构及制造其的方法 |
CN103975439B (zh) * | 2011-12-12 | 2018-01-09 | 科锐 | 用于降低的电流拥挤的双极性结型晶体管结构及制造其的方法 |
CN104106133A (zh) * | 2012-01-31 | 2014-10-15 | 英飞凌科技德累斯顿有限责任公司 | 具有有源漂移区带的半导体布置 |
US9559089B2 (en) | 2012-01-31 | 2017-01-31 | Infineon Technologies Dresden Gmbh | Semiconductor arrangement with active drift zone |
CN103872099A (zh) * | 2012-12-13 | 2014-06-18 | 英飞凌科技股份有限公司 | 具有阶梯状边缘终端的半导体器件,以及用于制造半导体器件的方法 |
CN103872099B (zh) * | 2012-12-13 | 2017-04-12 | 英飞凌科技股份有限公司 | 具有阶梯状边缘终端的半导体器件,以及用于制造半导体器件的方法 |
WO2022028365A1 (zh) * | 2020-08-03 | 2022-02-10 | 华润微电子(重庆)有限公司 | 一种沟槽型肖特基二极管终端结构及其制作方法 |
CN114068668A (zh) * | 2020-08-03 | 2022-02-18 | 华润微电子(重庆)有限公司 | 一种沟槽型肖特基二极管终端结构及其制作方法 |
CN114005885A (zh) * | 2021-10-29 | 2022-02-01 | 重庆平创半导体研究院有限责任公司 | 一种沟槽型肖特基二极管器件及其制作方法 |
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CN100485960C (zh) | 2009-05-06 |
US8344448B2 (en) | 2013-01-01 |
EP1634338A1 (en) | 2006-03-15 |
JP2006526286A (ja) | 2006-11-16 |
WO2004107448A1 (en) | 2004-12-09 |
US20110291185A1 (en) | 2011-12-01 |
KR20060040592A (ko) | 2006-05-10 |
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