CN1886835A - 沟槽绝缘栅场效应晶体管 - Google Patents
沟槽绝缘栅场效应晶体管 Download PDFInfo
- Publication number
- CN1886835A CN1886835A CNA2004800351977A CN200480035197A CN1886835A CN 1886835 A CN1886835 A CN 1886835A CN A2004800351977 A CNA2004800351977 A CN A2004800351977A CN 200480035197 A CN200480035197 A CN 200480035197A CN 1886835 A CN1886835 A CN 1886835A
- Authority
- CN
- China
- Prior art keywords
- effect transistor
- igfet
- field effect
- isolated
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title claims description 20
- 210000000746 body region Anatomy 0.000 claims abstract description 39
- 239000012212 insulator Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
Abstract
Description
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0327792.8 | 2003-11-29 | ||
GBGB0327792.8A GB0327792D0 (en) | 2003-11-29 | 2003-11-29 | Trench insulated gate field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1886835A true CN1886835A (zh) | 2006-12-27 |
CN100546045C CN100546045C (zh) | 2009-09-30 |
Family
ID=29798071
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800351977A Expired - Fee Related CN100546045C (zh) | 2003-11-29 | 2004-11-26 | 沟槽绝缘栅场效应晶体管 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20070126055A1 (zh) |
EP (1) | EP1692726A2 (zh) |
JP (1) | JP2007512700A (zh) |
CN (1) | CN100546045C (zh) |
GB (1) | GB0327792D0 (zh) |
WO (1) | WO2005053032A2 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103887342A (zh) * | 2014-04-10 | 2014-06-25 | 矽力杰半导体技术(杭州)有限公司 | 沟槽mosfet及其制作方法 |
CN106252397A (zh) * | 2015-06-15 | 2016-12-21 | 英飞凌科技股份有限公司 | 具有降低的发射极效率的半导体器件 |
CN107170804A (zh) * | 2017-03-29 | 2017-09-15 | 西安电子科技大学 | 复合源场板电流孔径异质结场效应晶体管 |
CN107170820A (zh) * | 2017-03-29 | 2017-09-15 | 西安电子科技大学 | 弧形栅‑漏复合场板电流孔径异质结器件 |
CN108336129A (zh) * | 2018-01-12 | 2018-07-27 | 中国科学院微电子研究所 | 超级结肖特基二极管与其制作方法 |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0407363D0 (en) * | 2004-03-31 | 2004-05-05 | Koninkl Philips Electronics Nv | Trench semiconductor device and method of manufacturing it |
DE102005041256B4 (de) | 2005-08-31 | 2007-12-20 | Infineon Technologies Ag | Trenchtransistor |
DE102006026943B4 (de) | 2006-06-09 | 2011-01-05 | Infineon Technologies Austria Ag | Mittels Feldeffekt steuerbarer Trench-Transistor mit zwei Steuerelektroden |
ATE515064T1 (de) | 2007-10-29 | 2011-07-15 | Nxp Bv | Graben-gate-mosfet und verfahren zu dessen herstellung |
US8022470B2 (en) * | 2008-09-04 | 2011-09-20 | Infineon Technologies Austria Ag | Semiconductor device with a trench gate structure and method for the production thereof |
US8796764B2 (en) | 2008-09-30 | 2014-08-05 | Infineon Technologies Austria Ag | Semiconductor device comprising trench gate and buried source electrodes |
US7851312B2 (en) | 2009-01-23 | 2010-12-14 | Semiconductor Components Industries, Llc | Semiconductor component and method of manufacture |
US8021947B2 (en) | 2009-12-09 | 2011-09-20 | Semiconductor Components Industries, Llc | Method of forming an insulated gate field effect transistor device having a shield electrode structure |
US8247296B2 (en) | 2009-12-09 | 2012-08-21 | Semiconductor Components Industries, Llc | Method of forming an insulated gate field effect transistor device having a shield electrode structure |
US8519473B2 (en) * | 2010-07-14 | 2013-08-27 | Infineon Technologies Ag | Vertical transistor component |
US8466513B2 (en) | 2011-06-13 | 2013-06-18 | Semiconductor Components Industries, Llc | Semiconductor device with enhanced mobility and method |
JP2013093444A (ja) * | 2011-10-26 | 2013-05-16 | Rohm Co Ltd | 高速スイッチング動作回路 |
US9029215B2 (en) | 2012-05-14 | 2015-05-12 | Semiconductor Components Industries, Llc | Method of making an insulated gate semiconductor device having a shield electrode structure |
US8921184B2 (en) | 2012-05-14 | 2014-12-30 | Semiconductor Components Industries, Llc | Method of making an electrode contact structure and structure therefor |
US8778764B2 (en) | 2012-07-16 | 2014-07-15 | Semiconductor Components Industries, Llc | Method of making an insulated gate semiconductor device having a shield electrode structure and structure therefor |
US9269779B2 (en) | 2014-07-21 | 2016-02-23 | Semiconductor Components Industries, Llc | Insulated gate semiconductor device having a shield electrode structure |
JP6317727B2 (ja) * | 2015-12-28 | 2018-04-25 | 株式会社東芝 | 半導体装置 |
JP6322253B2 (ja) * | 2016-10-12 | 2018-05-09 | ローム株式会社 | 高速スイッチング動作回路を備えたワイヤレス給電装置およびac/dc電源回路 |
TWI722166B (zh) * | 2017-04-10 | 2021-03-21 | 聯穎光電股份有限公司 | 高電子遷移率電晶體 |
JP6496063B2 (ja) * | 2018-04-06 | 2019-04-03 | ローム株式会社 | スイッチング電源回路およびスイッチング素子 |
JP7077251B2 (ja) * | 2019-02-25 | 2022-05-30 | 株式会社東芝 | 半導体装置 |
JP6735375B2 (ja) * | 2019-03-07 | 2020-08-05 | ローム株式会社 | スイッチング電源回路およびスイッチング素子 |
JP7381335B2 (ja) * | 2019-12-26 | 2023-11-15 | 株式会社東芝 | 半導体装置 |
JP7161582B2 (ja) * | 2020-07-13 | 2022-10-26 | ローム株式会社 | スイッチング素子 |
EP4210109A1 (en) * | 2022-01-11 | 2023-07-12 | Nexperia B.V. | Silicon chip package structure and method of manufacturing thereof |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03211885A (ja) * | 1990-01-17 | 1991-09-17 | Matsushita Electron Corp | 半導体装置及びその製造方法 |
US20010003367A1 (en) * | 1998-06-12 | 2001-06-14 | Fwu-Iuan Hshieh | Trenched dmos device with low gate charges |
US6621121B2 (en) * | 1998-10-26 | 2003-09-16 | Silicon Semiconductor Corporation | Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes |
US5998833A (en) * | 1998-10-26 | 1999-12-07 | North Carolina State University | Power semiconductor devices having improved high frequency switching and breakdown characteristics |
JP4528460B2 (ja) * | 2000-06-30 | 2010-08-18 | 株式会社東芝 | 半導体素子 |
US6573558B2 (en) * | 2001-09-07 | 2003-06-03 | Power Integrations, Inc. | High-voltage vertical transistor with a multi-layered extended drain structure |
US7122860B2 (en) * | 2002-05-31 | 2006-10-17 | Koninklijke Philips Electronics N.V. | Trench-gate semiconductor devices |
-
2003
- 2003-11-29 GB GBGB0327792.8A patent/GB0327792D0/en not_active Ceased
-
2004
- 2004-11-26 JP JP2006540762A patent/JP2007512700A/ja not_active Withdrawn
- 2004-11-26 EP EP04799252A patent/EP1692726A2/en not_active Withdrawn
- 2004-11-26 WO PCT/IB2004/052562 patent/WO2005053032A2/en not_active Application Discontinuation
- 2004-11-26 CN CNB2004800351977A patent/CN100546045C/zh not_active Expired - Fee Related
- 2004-11-26 US US10/580,625 patent/US20070126055A1/en not_active Abandoned
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103887342A (zh) * | 2014-04-10 | 2014-06-25 | 矽力杰半导体技术(杭州)有限公司 | 沟槽mosfet及其制作方法 |
CN103887342B (zh) * | 2014-04-10 | 2018-11-02 | 矽力杰半导体技术(杭州)有限公司 | 沟槽mosfet及其制作方法 |
CN106252397A (zh) * | 2015-06-15 | 2016-12-21 | 英飞凌科技股份有限公司 | 具有降低的发射极效率的半导体器件 |
CN106252397B (zh) * | 2015-06-15 | 2019-07-16 | 英飞凌科技股份有限公司 | 具有降低的发射极效率的半导体器件 |
CN107170804A (zh) * | 2017-03-29 | 2017-09-15 | 西安电子科技大学 | 复合源场板电流孔径异质结场效应晶体管 |
CN107170820A (zh) * | 2017-03-29 | 2017-09-15 | 西安电子科技大学 | 弧形栅‑漏复合场板电流孔径异质结器件 |
CN107170820B (zh) * | 2017-03-29 | 2020-04-14 | 西安电子科技大学 | 弧形栅-漏复合场板电流孔径异质结器件 |
CN107170804B (zh) * | 2017-03-29 | 2020-06-16 | 西安电子科技大学 | 复合源场板电流孔径异质结场效应晶体管 |
CN108336129A (zh) * | 2018-01-12 | 2018-07-27 | 中国科学院微电子研究所 | 超级结肖特基二极管与其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1692726A2 (en) | 2006-08-23 |
JP2007512700A (ja) | 2007-05-17 |
CN100546045C (zh) | 2009-09-30 |
WO2005053032A3 (en) | 2005-08-25 |
GB0327792D0 (en) | 2003-12-31 |
WO2005053032A2 (en) | 2005-06-09 |
US20070126055A1 (en) | 2007-06-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1886835A (zh) | 沟槽绝缘栅场效应晶体管 | |
US9947779B2 (en) | Power MOSFET having lateral channel, vertical current path, and P-region under gate for increasing breakdown voltage | |
US9461127B2 (en) | Vertical power MOSFET having planar channel and its method of fabrication | |
KR100607526B1 (ko) | 연장된 트렌치와 도핑 영역을 갖는 모스-게이트 파워디바이스 및 그 성형공정 | |
US8294235B2 (en) | Edge termination with improved breakdown voltage | |
US6359308B1 (en) | Cellular trench-gate field-effect transistors | |
US8344448B2 (en) | Semiconductor device having an edge termination structure and method of manufacture thereof | |
CN1215570C (zh) | Mos晶体管组件 | |
CN1468449A (zh) | 内含沟道型肖特基整流器的沟道型dmos晶体管 | |
CN1520616A (zh) | 具有防止基区穿通的横向延伸基区屏蔽区的功率半导体器件及其制造方法 | |
CN1449058A (zh) | 半导体器件 | |
KR20020086302A (ko) | 반도체 장치 | |
CN1886837A (zh) | 沟槽绝缘栅场效应晶体管 | |
CN1599959A (zh) | 沟槽半导体器件及其制造 | |
CN105633137A (zh) | 一种槽栅功率mosfet器件 | |
CN108091685A (zh) | 一种提高耐压的半超结mosfet结构及其制备方法 | |
US7696599B2 (en) | Trench MOSFET | |
CN101593773B (zh) | 沟槽型功率mos晶体管及利用其的集成电路 | |
WO2018034818A1 (en) | Power mosfet having planar channel, vertical current path, and top drain electrode | |
CN1809931A (zh) | 沟槽mos结构 | |
CN1799144A (zh) | 半导体器件的端子结构及其制造方法 | |
CN112993021B (zh) | 横向双扩散金属氧化物半导体场效应管 | |
CN1930688A (zh) | 沟槽式场效应晶体管和其制造方法 | |
CN112750815B (zh) | 组合的mcd和mos晶体管半导体器件 | |
WO2023202275A1 (zh) | 绝缘体上硅横向器件及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: NXP CO., LTD. Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V. Effective date: 20070810 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20070810 Address after: Holland Ian Deho Finn Applicant after: Koninkl Philips Electronics NV Address before: Holland Ian Deho Finn Applicant before: Koninklijke Philips Electronics N.V. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090930 Termination date: 20151126 |