CN103887342B - 沟槽mosfet及其制作方法 - Google Patents
沟槽mosfet及其制作方法 Download PDFInfo
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- CN103887342B CN103887342B CN201410143493.4A CN201410143493A CN103887342B CN 103887342 B CN103887342 B CN 103887342B CN 201410143493 A CN201410143493 A CN 201410143493A CN 103887342 B CN103887342 B CN 103887342B
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Classifications
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
- H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
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Priority Applications (1)
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CN201410143493.4A CN103887342B (zh) | 2014-04-10 | 2014-04-10 | 沟槽mosfet及其制作方法 |
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CN201410143493.4A CN103887342B (zh) | 2014-04-10 | 2014-04-10 | 沟槽mosfet及其制作方法 |
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CN103887342A CN103887342A (zh) | 2014-06-25 |
CN103887342B true CN103887342B (zh) | 2018-11-02 |
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Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105720051B (zh) * | 2014-12-05 | 2019-06-07 | 帅群微电子股份有限公司 | 半导体元件与其制造方法 |
CN105789043B (zh) * | 2014-12-25 | 2019-03-12 | 华润微电子(重庆)有限公司 | 沟槽型半导体器件及其制作方法 |
CN105810732B (zh) * | 2014-12-31 | 2019-01-22 | 帅群微电子股份有限公司 | 沟槽式功率金氧半场效晶体管与其制作方法 |
CN107579110B (zh) * | 2016-07-04 | 2020-04-21 | 大中积体电路股份有限公司 | 沟槽式功率半导体元件 |
CN106887465B (zh) * | 2017-01-04 | 2019-12-10 | 上海华虹宏力半导体制造有限公司 | 沟槽型双层栅mosfet的制作方法 |
CN107910271B (zh) * | 2017-11-17 | 2023-11-17 | 杭州士兰集成电路有限公司 | 功率半导体器件及其制造方法 |
JP6864640B2 (ja) * | 2018-03-19 | 2021-04-28 | 株式会社東芝 | 半導体装置及びその制御方法 |
US10714574B2 (en) * | 2018-05-08 | 2020-07-14 | Ipower Semiconductor | Shielded trench devices |
WO2019218278A1 (en) | 2018-05-16 | 2019-11-21 | Yangtze Memory Technologies Co., Ltd. | Methods for solving epitaxial growth loading effect at different pattern density regions |
WO2020198910A1 (en) * | 2019-03-29 | 2020-10-08 | Texas Instruments Incorporated | Trench shield isolation layer |
CN110620153A (zh) * | 2019-08-28 | 2019-12-27 | 上海韦尔半导体股份有限公司 | 一种屏蔽栅场效应晶体管及其制造方法 |
CN112652652A (zh) * | 2019-10-12 | 2021-04-13 | 华润微电子(重庆)有限公司 | 沟槽型场效应晶体管结构及其制备方法 |
CN111524976B (zh) * | 2020-04-28 | 2021-08-17 | 电子科技大学 | 一种低栅电荷的功率mos器件及其制造方法 |
CN112582260B (zh) * | 2020-12-04 | 2023-08-22 | 杭州芯迈半导体技术有限公司 | 沟槽型mosfet及其制造方法 |
CN113206148B (zh) * | 2021-04-09 | 2023-05-02 | 杭州芯迈半导体技术有限公司 | 沟槽mosfet及其制造方法 |
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CN1886835A (zh) * | 2003-11-29 | 2006-12-27 | 皇家飞利浦电子股份有限公司 | 沟槽绝缘栅场效应晶体管 |
CN101740622A (zh) * | 2008-11-14 | 2010-06-16 | 半导体元件工业有限责任公司 | 用于半导体器件的屏蔽电极结构和方法 |
CN102005377A (zh) * | 2009-08-31 | 2011-04-06 | 万国半导体股份有限公司 | 具有厚底部屏蔽氧化物的沟槽双扩散金属氧化物半导体器件的制备 |
CN203445130U (zh) * | 2012-06-12 | 2014-02-19 | 成都芯源系统有限公司 | 半导体器件 |
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JPH08250677A (ja) * | 1994-12-28 | 1996-09-27 | Nippon Steel Corp | 半導体記憶装置及びその製造方法 |
US7091573B2 (en) * | 2002-03-19 | 2006-08-15 | Infineon Technologies Ag | Power transistor |
DE102004057237B4 (de) * | 2004-11-26 | 2007-02-08 | Infineon Technologies Ag | Verfahren zum Herstellen von Kontaktlöchern in einem Halbleiterkörper sowie Transistor mit vertikalem Aufbau |
JP2006237066A (ja) * | 2005-02-22 | 2006-09-07 | Toshiba Corp | 半導体装置 |
DE102005041108B3 (de) * | 2005-08-30 | 2007-05-31 | Infineon Technologies Ag | Verfahren zur Herstellung eines Trench-Transistors und Trench-Transistor |
US8633539B2 (en) * | 2011-06-27 | 2014-01-21 | Infineon Technologies Austria Ag | Trench transistor and manufacturing method of the trench transistor |
US8778764B2 (en) * | 2012-07-16 | 2014-07-15 | Semiconductor Components Industries, Llc | Method of making an insulated gate semiconductor device having a shield electrode structure and structure therefor |
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2014
- 2014-04-10 CN CN201410143493.4A patent/CN103887342B/zh active Active
Patent Citations (4)
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CN1886835A (zh) * | 2003-11-29 | 2006-12-27 | 皇家飞利浦电子股份有限公司 | 沟槽绝缘栅场效应晶体管 |
CN101740622A (zh) * | 2008-11-14 | 2010-06-16 | 半导体元件工业有限责任公司 | 用于半导体器件的屏蔽电极结构和方法 |
CN102005377A (zh) * | 2009-08-31 | 2011-04-06 | 万国半导体股份有限公司 | 具有厚底部屏蔽氧化物的沟槽双扩散金属氧化物半导体器件的制备 |
CN203445130U (zh) * | 2012-06-12 | 2014-02-19 | 成都芯源系统有限公司 | 半导体器件 |
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