CN1882714A - 硅酸盐材料的洁净工艺及其设备 - Google Patents
硅酸盐材料的洁净工艺及其设备 Download PDFInfo
- Publication number
- CN1882714A CN1882714A CNA2004800276459A CN200480027645A CN1882714A CN 1882714 A CN1882714 A CN 1882714A CN A2004800276459 A CNA2004800276459 A CN A2004800276459A CN 200480027645 A CN200480027645 A CN 200480027645A CN 1882714 A CN1882714 A CN 1882714A
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- CN
- China
- Prior art keywords
- substrate
- treatment process
- substrate surface
- nozzle
- roughening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 137
- 230000008569 process Effects 0.000 title claims description 60
- 239000000463 material Substances 0.000 title claims description 19
- 238000004140 cleaning Methods 0.000 title description 20
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 212
- 239000010453 quartz Substances 0.000 claims abstract description 61
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 61
- 238000005530 etching Methods 0.000 claims abstract description 41
- 230000003746 surface roughness Effects 0.000 claims abstract description 6
- 238000007788 roughening Methods 0.000 claims description 48
- 239000000243 solution Substances 0.000 claims description 28
- 239000004576 sand Substances 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 239000000126 substance Substances 0.000 claims description 20
- 239000002253 acid Substances 0.000 claims description 18
- 238000004381 surface treatment Methods 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 14
- 208000037656 Respiratory Sounds Diseases 0.000 claims description 11
- 239000003929 acidic solution Substances 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 10
- 229910021641 deionized water Inorganic materials 0.000 claims description 10
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 10
- 239000003960 organic solvent Substances 0.000 claims description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 238000002242 deionisation method Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000002957 persistent organic pollutant Substances 0.000 claims description 3
- 238000005488 sandblasting Methods 0.000 claims description 3
- 238000003723 Smelting Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
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- 231100001240 inorganic pollutant Toxicity 0.000 claims 1
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- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 206010011376 Crepitations Diseases 0.000 description 3
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 3
- 208000033962 Fontaine progeroid syndrome Diseases 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000002775 capsule Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
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- 239000003344 environmental pollutant Substances 0.000 description 3
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 231100000719 pollutant Toxicity 0.000 description 3
- 238000009991 scouring Methods 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- SZNYYWIUQFZLLT-UHFFFAOYSA-N 2-methyl-1-(2-methylpropoxy)propane Chemical compound CC(C)COCC(C)C SZNYYWIUQFZLLT-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
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- 238000007654 immersion Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000013618 particulate matter Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- DFUYAWQUODQGFF-UHFFFAOYSA-N 1-ethoxy-1,1,2,2,3,3,4,4,4-nonafluorobutane Chemical compound CCOC(F)(F)C(F)(F)C(F)(F)C(F)(F)F DFUYAWQUODQGFF-UHFFFAOYSA-N 0.000 description 1
- OEPRBXUJOQLYID-UHFFFAOYSA-N 1-fluoropentane Chemical compound CCCCCF OEPRBXUJOQLYID-UHFFFAOYSA-N 0.000 description 1
- ZYVYEJXMYBUCMN-UHFFFAOYSA-N 1-methoxy-2-methylpropane Chemical compound COCC(C)C ZYVYEJXMYBUCMN-UHFFFAOYSA-N 0.000 description 1
- CXBDYQVECUFKRK-UHFFFAOYSA-N 1-methoxybutane Chemical compound CCCCOC CXBDYQVECUFKRK-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
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- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
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- 239000002245 particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
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- 230000002194 synthesizing effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- -1 β-pyrrolidone Chemical compound 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Surface Treatment Of Glass (AREA)
- Glass Melting And Manufacturing (AREA)
- Cleaning In General (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (37)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/627,185 | 2003-07-24 | ||
US10/627,185 US7045072B2 (en) | 2003-07-24 | 2003-07-24 | Cleaning process and apparatus for silicate materials |
PCT/US2004/023597 WO2005010948A2 (en) | 2003-07-24 | 2004-07-22 | Cleaning process and apparatus for silicate materials |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010151738XA Division CN101901743B (zh) | 2003-07-24 | 2004-07-22 | 硅酸盐材料的洁净工艺及其设备 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1882714A true CN1882714A (zh) | 2006-12-20 |
CN1882714B CN1882714B (zh) | 2010-06-16 |
Family
ID=34080589
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004800276459A Active CN1882714B (zh) | 2003-07-24 | 2004-07-22 | 硅酸盐材料的洁净工艺及其设备 |
CN201010151738XA Active CN101901743B (zh) | 2003-07-24 | 2004-07-22 | 硅酸盐材料的洁净工艺及其设备 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010151738XA Active CN101901743B (zh) | 2003-07-24 | 2004-07-22 | 硅酸盐材料的洁净工艺及其设备 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7045072B2 (zh) |
JP (1) | JP4774367B2 (zh) |
KR (1) | KR101145470B1 (zh) |
CN (2) | CN1882714B (zh) |
SG (1) | SG145688A1 (zh) |
TW (1) | TWI251873B (zh) |
WO (1) | WO2005010948A2 (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103011611A (zh) * | 2012-12-24 | 2013-04-03 | 上海申和热磁电子有限公司 | 一种半导体用石英的表面处理方法 |
CN103451748A (zh) * | 2012-05-28 | 2013-12-18 | 中国科学院宁波材料技术与工程研究所 | 一种聚丙烯腈原丝纺丝喷丝板的清洗方法 |
CN104423063A (zh) * | 2013-08-29 | 2015-03-18 | 江苏远大光学科技有限公司 | 眼镜片处理方法 |
CN104419236A (zh) * | 2013-08-29 | 2015-03-18 | 江苏远大光学科技有限公司 | 一种镜片处理药水 |
CN104465415A (zh) * | 2014-11-28 | 2015-03-25 | 上海华力微电子有限公司 | 一种改善剥落型缺陷的方法 |
CN105324850A (zh) * | 2013-06-24 | 2016-02-10 | 三菱电机株式会社 | 太阳光发电装置用基板的制造方法及太阳光发电装置用基板的制造装置 |
CN106971969A (zh) * | 2017-05-11 | 2017-07-21 | 济源石晶光电频率技术有限公司 | 石英晶片去污装置和石英晶片去污方法 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050161061A1 (en) * | 2003-09-17 | 2005-07-28 | Hong Shih | Methods for cleaning a set of structures comprising yttrium oxide in a plasma processing system |
US7754609B1 (en) | 2003-10-28 | 2010-07-13 | Applied Materials, Inc. | Cleaning processes for silicon carbide materials |
US7846349B2 (en) * | 2004-12-22 | 2010-12-07 | Applied Materials, Inc. | Solution for the selective removal of metal from aluminum substrates |
DE102005005196B4 (de) * | 2005-02-03 | 2009-04-23 | Heraeus Quarzglas Gmbh & Co. Kg | Verfahren zur Herstellung eines Bauteils aus Quarzglas für den Einsatz in der Halbleiterfertigung und nach dem Verfahren erhaltenes Bauteil |
US7514125B2 (en) * | 2006-06-23 | 2009-04-07 | Applied Materials, Inc. | Methods to improve the in-film defectivity of PECVD amorphous carbon films |
JP5156752B2 (ja) * | 2006-11-01 | 2013-03-06 | クアンタム グローバル テクノロジーズ リミテッド ライアビリティ カンパニー | チャンバーコンポーネントを洗浄する方法及び装置 |
US8097089B2 (en) * | 2007-12-19 | 2012-01-17 | Quantum Global Technologies LLC | Methods for cleaning process kits and chambers, and for ruthenium recovery |
US8398779B2 (en) * | 2009-03-02 | 2013-03-19 | Applied Materials, Inc. | Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates |
US9517873B1 (en) | 2012-09-28 | 2016-12-13 | Air Liquide Electronics U.S. Lp | Clean storage packaging article and method for making and using |
US20160017263A1 (en) * | 2013-03-14 | 2016-01-21 | Applied Materials, Inc. | Wet cleaning of a chamber component |
US9561982B2 (en) * | 2013-04-30 | 2017-02-07 | Corning Incorporated | Method of cleaning glass substrates |
KR101529571B1 (ko) * | 2014-02-20 | 2015-06-18 | 주식회사 원익큐엔씨 | 쿼츠 소재의 표면 처리 방법, 표면 처리용 조성물 및 그에 의해 제작된 쿼츠 소재 |
KR101606793B1 (ko) * | 2014-08-04 | 2016-03-28 | 주식회사 원익큐엔씨 | 화학기상증착용 쿼츠 지그의 표면 처리 방법, 쿼츠 지그의 표면 처리용 조성물 및 그에 의해 제작된 쿼츠 지그 |
DE102014216325A1 (de) * | 2014-08-18 | 2016-02-18 | Wacker Chemie Ag | Verfahren zur Herstellung von polykristallinem Silicium |
US9406534B2 (en) * | 2014-09-17 | 2016-08-02 | Lam Research Corporation | Wet clean process for cleaning plasma processing chamber components |
BR112022013018A2 (pt) | 2019-12-31 | 2022-09-06 | Cold Jet Llc | Método e aparelho para fluxo de jateamento aprimorado |
CN113770100A (zh) * | 2020-07-15 | 2021-12-10 | 英迪那米(徐州)半导体科技有限公司 | 一种半导体零部件洁净清洗工艺 |
CN113149450A (zh) * | 2021-05-11 | 2021-07-23 | 沈阳偶得科技有限公司 | 一种lpcvd工艺用石英制品制造丘陵状表面的方法 |
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US3992454A (en) * | 1971-04-26 | 1976-11-16 | Joseph W. Aidlin | Protective coating for articles |
US3969195A (en) * | 1971-05-07 | 1976-07-13 | Siemens Aktiengesellschaft | Methods of coating and surface finishing articles made of metals and their alloys |
US4101386A (en) * | 1971-05-07 | 1978-07-18 | Siemens Aktiengesellschaft | Methods of coating and surface finishing articles made of metals and their alloys |
US3775202A (en) * | 1972-03-13 | 1973-11-27 | Dea Prod Inc | Etching control system |
JPS5144912B2 (zh) * | 1973-12-09 | 1976-12-01 | ||
US4078963A (en) * | 1973-12-10 | 1978-03-14 | U.S. Philips Corporation | Method of manufacturing a semiconductor device, having a pattern of conductors on a supporting body |
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- 2004-07-22 CN CN201010151738XA patent/CN101901743B/zh active Active
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CN103451748A (zh) * | 2012-05-28 | 2013-12-18 | 中国科学院宁波材料技术与工程研究所 | 一种聚丙烯腈原丝纺丝喷丝板的清洗方法 |
CN103451748B (zh) * | 2012-05-28 | 2016-01-13 | 中国科学院宁波材料技术与工程研究所 | 一种聚丙烯腈原丝纺丝喷丝板的清洗方法 |
CN103011611A (zh) * | 2012-12-24 | 2013-04-03 | 上海申和热磁电子有限公司 | 一种半导体用石英的表面处理方法 |
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CN105324850A (zh) * | 2013-06-24 | 2016-02-10 | 三菱电机株式会社 | 太阳光发电装置用基板的制造方法及太阳光发电装置用基板的制造装置 |
CN104423063A (zh) * | 2013-08-29 | 2015-03-18 | 江苏远大光学科技有限公司 | 眼镜片处理方法 |
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CN104465415A (zh) * | 2014-11-28 | 2015-03-25 | 上海华力微电子有限公司 | 一种改善剥落型缺陷的方法 |
CN106971969A (zh) * | 2017-05-11 | 2017-07-21 | 济源石晶光电频率技术有限公司 | 石英晶片去污装置和石英晶片去污方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1882714B (zh) | 2010-06-16 |
KR101145470B1 (ko) | 2012-05-15 |
JP4774367B2 (ja) | 2011-09-14 |
CN101901743A (zh) | 2010-12-01 |
TW200516656A (en) | 2005-05-16 |
US7045072B2 (en) | 2006-05-16 |
WO2005010948A3 (en) | 2005-09-15 |
CN101901743B (zh) | 2012-09-19 |
US7452475B2 (en) | 2008-11-18 |
WO2005010948A2 (en) | 2005-02-03 |
TWI251873B (en) | 2006-03-21 |
US20050167393A1 (en) | 2005-08-04 |
US20050016958A1 (en) | 2005-01-27 |
SG145688A1 (en) | 2008-09-29 |
JP2006528841A (ja) | 2006-12-21 |
KR20060114680A (ko) | 2006-11-07 |
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