SG145688A1 - Cleaning process and apparatus for silicate materials - Google Patents
Cleaning process and apparatus for silicate materialsInfo
- Publication number
- SG145688A1 SG145688A1 SG200805490-0A SG2008054900A SG145688A1 SG 145688 A1 SG145688 A1 SG 145688A1 SG 2008054900 A SG2008054900 A SG 2008054900A SG 145688 A1 SG145688 A1 SG 145688A1
- Authority
- SG
- Singapore
- Prior art keywords
- roughness
- initial
- cleaning process
- working surface
- silicate materials
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Surface Treatment Of Glass (AREA)
- Glass Melting And Manufacturing (AREA)
- Cleaning In General (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/627,185 US7045072B2 (en) | 2003-07-24 | 2003-07-24 | Cleaning process and apparatus for silicate materials |
Publications (1)
Publication Number | Publication Date |
---|---|
SG145688A1 true SG145688A1 (en) | 2008-09-29 |
Family
ID=34080589
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200805490-0A SG145688A1 (en) | 2003-07-24 | 2004-07-22 | Cleaning process and apparatus for silicate materials |
Country Status (7)
Country | Link |
---|---|
US (2) | US7045072B2 (zh) |
JP (1) | JP4774367B2 (zh) |
KR (1) | KR101145470B1 (zh) |
CN (2) | CN101901743B (zh) |
SG (1) | SG145688A1 (zh) |
TW (1) | TWI251873B (zh) |
WO (1) | WO2005010948A2 (zh) |
Families Citing this family (25)
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US20050161061A1 (en) * | 2003-09-17 | 2005-07-28 | Hong Shih | Methods for cleaning a set of structures comprising yttrium oxide in a plasma processing system |
US7754609B1 (en) | 2003-10-28 | 2010-07-13 | Applied Materials, Inc. | Cleaning processes for silicon carbide materials |
US7846349B2 (en) * | 2004-12-22 | 2010-12-07 | Applied Materials, Inc. | Solution for the selective removal of metal from aluminum substrates |
DE102005005196B4 (de) * | 2005-02-03 | 2009-04-23 | Heraeus Quarzglas Gmbh & Co. Kg | Verfahren zur Herstellung eines Bauteils aus Quarzglas für den Einsatz in der Halbleiterfertigung und nach dem Verfahren erhaltenes Bauteil |
US7514125B2 (en) | 2006-06-23 | 2009-04-07 | Applied Materials, Inc. | Methods to improve the in-film defectivity of PECVD amorphous carbon films |
US7789969B2 (en) * | 2006-11-01 | 2010-09-07 | Applied Materials, Inc. | Methods and apparatus for cleaning chamber components |
US8097089B2 (en) * | 2007-12-19 | 2012-01-17 | Quantum Global Technologies LLC | Methods for cleaning process kits and chambers, and for ruthenium recovery |
US8398779B2 (en) * | 2009-03-02 | 2013-03-19 | Applied Materials, Inc. | Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates |
CN103451748B (zh) * | 2012-05-28 | 2016-01-13 | 中国科学院宁波材料技术与工程研究所 | 一种聚丙烯腈原丝纺丝喷丝板的清洗方法 |
US9517873B1 (en) | 2012-09-28 | 2016-12-13 | Air Liquide Electronics U.S. Lp | Clean storage packaging article and method for making and using |
CN103011611B (zh) * | 2012-12-24 | 2017-03-15 | 上海申和热磁电子有限公司 | 一种半导体用石英的表面处理方法 |
US20160017263A1 (en) * | 2013-03-14 | 2016-01-21 | Applied Materials, Inc. | Wet cleaning of a chamber component |
US9561982B2 (en) * | 2013-04-30 | 2017-02-07 | Corning Incorporated | Method of cleaning glass substrates |
US9537026B2 (en) | 2013-06-24 | 2017-01-03 | Mitsubishi Electric Corporation | Method for manufacturing solar-power-generator substrate and apparatus for manufacturing solar-power-generator substrate |
CN104423063A (zh) * | 2013-08-29 | 2015-03-18 | 江苏远大光学科技有限公司 | 眼镜片处理方法 |
CN104419236A (zh) * | 2013-08-29 | 2015-03-18 | 江苏远大光学科技有限公司 | 一种镜片处理药水 |
KR101529571B1 (ko) * | 2014-02-20 | 2015-06-18 | 주식회사 원익큐엔씨 | 쿼츠 소재의 표면 처리 방법, 표면 처리용 조성물 및 그에 의해 제작된 쿼츠 소재 |
KR101606793B1 (ko) * | 2014-08-04 | 2016-03-28 | 주식회사 원익큐엔씨 | 화학기상증착용 쿼츠 지그의 표면 처리 방법, 쿼츠 지그의 표면 처리용 조성물 및 그에 의해 제작된 쿼츠 지그 |
DE102014216325A1 (de) * | 2014-08-18 | 2016-02-18 | Wacker Chemie Ag | Verfahren zur Herstellung von polykristallinem Silicium |
US9406534B2 (en) * | 2014-09-17 | 2016-08-02 | Lam Research Corporation | Wet clean process for cleaning plasma processing chamber components |
CN104465415A (zh) * | 2014-11-28 | 2015-03-25 | 上海华力微电子有限公司 | 一种改善剥落型缺陷的方法 |
CN106971969A (zh) * | 2017-05-11 | 2017-07-21 | 济源石晶光电频率技术有限公司 | 石英晶片去污装置和石英晶片去污方法 |
TWI832028B (zh) | 2019-12-31 | 2024-02-11 | 美商冷卻噴射公司 | 粒子噴射系統及從一噴射噴嘴排出一挾帶粒子流之方法 |
CN113770100A (zh) * | 2020-07-15 | 2021-12-10 | 英迪那米(徐州)半导体科技有限公司 | 一种半导体零部件洁净清洗工艺 |
CN113149450A (zh) * | 2021-05-11 | 2021-07-23 | 沈阳偶得科技有限公司 | 一种lpcvd工艺用石英制品制造丘陵状表面的方法 |
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-
2003
- 2003-07-24 US US10/627,185 patent/US7045072B2/en not_active Expired - Lifetime
-
2004
- 2004-07-22 JP JP2006521240A patent/JP4774367B2/ja not_active Expired - Lifetime
- 2004-07-22 KR KR1020067001653A patent/KR101145470B1/ko active IP Right Grant
- 2004-07-22 CN CN201010151738XA patent/CN101901743B/zh not_active Expired - Lifetime
- 2004-07-22 CN CN2004800276459A patent/CN1882714B/zh not_active Expired - Lifetime
- 2004-07-22 WO PCT/US2004/023597 patent/WO2005010948A2/en active Application Filing
- 2004-07-22 SG SG200805490-0A patent/SG145688A1/en unknown
- 2004-07-26 TW TW093122255A patent/TWI251873B/zh active
-
2005
- 2005-02-17 US US11/061,013 patent/US7452475B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2006528841A (ja) | 2006-12-21 |
CN101901743B (zh) | 2012-09-19 |
CN1882714B (zh) | 2010-06-16 |
CN1882714A (zh) | 2006-12-20 |
JP4774367B2 (ja) | 2011-09-14 |
CN101901743A (zh) | 2010-12-01 |
US20050016958A1 (en) | 2005-01-27 |
TWI251873B (en) | 2006-03-21 |
WO2005010948A2 (en) | 2005-02-03 |
KR101145470B1 (ko) | 2012-05-15 |
US7045072B2 (en) | 2006-05-16 |
TW200516656A (en) | 2005-05-16 |
WO2005010948A3 (en) | 2005-09-15 |
US20050167393A1 (en) | 2005-08-04 |
KR20060114680A (ko) | 2006-11-07 |
US7452475B2 (en) | 2008-11-18 |
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