SG145688A1 - Cleaning process and apparatus for silicate materials - Google Patents

Cleaning process and apparatus for silicate materials

Info

Publication number
SG145688A1
SG145688A1 SG200805490-0A SG2008054900A SG145688A1 SG 145688 A1 SG145688 A1 SG 145688A1 SG 2008054900 A SG2008054900 A SG 2008054900A SG 145688 A1 SG145688 A1 SG 145688A1
Authority
SG
Singapore
Prior art keywords
roughness
initial
cleaning process
working surface
silicate materials
Prior art date
Application number
SG200805490-0A
Other languages
English (en)
Inventor
Samantha Tan
Ning Chen
Original Assignee
Chemtrace Prec Cleaning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chemtrace Prec Cleaning Inc filed Critical Chemtrace Prec Cleaning Inc
Publication of SG145688A1 publication Critical patent/SG145688A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Surface Treatment Of Glass (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Cleaning In General (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Drying Of Semiconductors (AREA)
SG200805490-0A 2003-07-24 2004-07-22 Cleaning process and apparatus for silicate materials SG145688A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/627,185 US7045072B2 (en) 2003-07-24 2003-07-24 Cleaning process and apparatus for silicate materials

Publications (1)

Publication Number Publication Date
SG145688A1 true SG145688A1 (en) 2008-09-29

Family

ID=34080589

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200805490-0A SG145688A1 (en) 2003-07-24 2004-07-22 Cleaning process and apparatus for silicate materials

Country Status (7)

Country Link
US (2) US7045072B2 (zh)
JP (1) JP4774367B2 (zh)
KR (1) KR101145470B1 (zh)
CN (2) CN101901743B (zh)
SG (1) SG145688A1 (zh)
TW (1) TWI251873B (zh)
WO (1) WO2005010948A2 (zh)

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CN103451748B (zh) * 2012-05-28 2016-01-13 中国科学院宁波材料技术与工程研究所 一种聚丙烯腈原丝纺丝喷丝板的清洗方法
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CN103011611B (zh) * 2012-12-24 2017-03-15 上海申和热磁电子有限公司 一种半导体用石英的表面处理方法
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CN104465415A (zh) * 2014-11-28 2015-03-25 上海华力微电子有限公司 一种改善剥落型缺陷的方法
CN106971969A (zh) * 2017-05-11 2017-07-21 济源石晶光电频率技术有限公司 石英晶片去污装置和石英晶片去污方法
TWI832028B (zh) 2019-12-31 2024-02-11 美商冷卻噴射公司 粒子噴射系統及從一噴射噴嘴排出一挾帶粒子流之方法
CN113770100A (zh) * 2020-07-15 2021-12-10 英迪那米(徐州)半导体科技有限公司 一种半导体零部件洁净清洗工艺
CN113149450A (zh) * 2021-05-11 2021-07-23 沈阳偶得科技有限公司 一种lpcvd工艺用石英制品制造丘陵状表面的方法

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Also Published As

Publication number Publication date
JP2006528841A (ja) 2006-12-21
CN101901743B (zh) 2012-09-19
CN1882714B (zh) 2010-06-16
CN1882714A (zh) 2006-12-20
JP4774367B2 (ja) 2011-09-14
CN101901743A (zh) 2010-12-01
US20050016958A1 (en) 2005-01-27
TWI251873B (en) 2006-03-21
WO2005010948A2 (en) 2005-02-03
KR101145470B1 (ko) 2012-05-15
US7045072B2 (en) 2006-05-16
TW200516656A (en) 2005-05-16
WO2005010948A3 (en) 2005-09-15
US20050167393A1 (en) 2005-08-04
KR20060114680A (ko) 2006-11-07
US7452475B2 (en) 2008-11-18

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