CN1864269A - Soi-ldmos器件 - Google Patents
Soi-ldmos器件 Download PDFInfo
- Publication number
- CN1864269A CN1864269A CNA038115719A CN03811571A CN1864269A CN 1864269 A CN1864269 A CN 1864269A CN A038115719 A CNA038115719 A CN A038115719A CN 03811571 A CN03811571 A CN 03811571A CN 1864269 A CN1864269 A CN 1864269A
- Authority
- CN
- China
- Prior art keywords
- semiconductor device
- field plate
- analysis circuit
- sub
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 238000004458 analytical method Methods 0.000 claims description 18
- 238000002955 isolation Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 11
- 230000036962 time dependent Effects 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7826—Lateral DMOS transistors, i.e. LDMOS transistors with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Preparation Of Compounds By Using Micro-Organisms (AREA)
- Measurement Of Current Or Voltage (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/152,235 US6717214B2 (en) | 2002-05-21 | 2002-05-21 | SOI-LDMOS device with integral voltage sense electrodes |
US10/152,235 | 2002-05-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1864269A true CN1864269A (zh) | 2006-11-15 |
CN100505305C CN100505305C (zh) | 2009-06-24 |
Family
ID=29548459
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038115719A Expired - Fee Related CN100505305C (zh) | 2002-05-21 | 2003-05-20 | Soi-ldmos器件 |
Country Status (8)
Country | Link |
---|---|
US (2) | US6717214B2 (zh) |
EP (1) | EP1509955B1 (zh) |
JP (1) | JP2005526400A (zh) |
KR (1) | KR20040111631A (zh) |
CN (1) | CN100505305C (zh) |
AT (1) | ATE510302T1 (zh) |
AU (1) | AU2003228040A1 (zh) |
WO (1) | WO2003098690A2 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101714552B (zh) * | 2009-11-09 | 2011-05-25 | 苏州博创集成电路设计有限公司 | 等离子显示驱动芯片用高低压器件及制备方法 |
CN101593774B (zh) * | 2009-06-10 | 2012-05-23 | 苏州博创集成电路设计有限公司 | P型绝缘体上硅的横向双扩散金属氧化物半导体晶体管 |
CN103762156A (zh) * | 2013-12-31 | 2014-04-30 | 上海新傲科技股份有限公司 | 半导体衬底的制作方法、半导体衬底以及高压晶体管 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4337983B2 (ja) * | 2005-02-17 | 2009-09-30 | 国立大学法人 東京大学 | 混在型半導体集積回路及びその製造方法 |
DE102005039804B4 (de) * | 2005-08-22 | 2009-07-09 | Infineon Technologies Ag | Laterales Halbleiterbauelement mit Driftstrecke und Potentialverteilungsstruktur, Verwendung des Halbleiterbauelements sowie Verfahren zur Herstellung desselben |
DE102006001922B3 (de) * | 2006-01-14 | 2007-05-03 | Infineon Technologies Austria Ag | Lateraler Leistungstransistor und Verfahren zu dessen Herstellung |
JP4989085B2 (ja) * | 2006-02-24 | 2012-08-01 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
JP5307973B2 (ja) * | 2006-02-24 | 2013-10-02 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
US8398636B2 (en) * | 2007-04-19 | 2013-03-19 | Stryker Trauma Gmbh | Hip fracture device with barrel and end cap for load control |
WO2008128663A2 (en) | 2007-04-19 | 2008-10-30 | Stryker Trauma Gmbh | Hip fracture device with static locking mechanism allowing compression |
US8174071B2 (en) * | 2008-05-02 | 2012-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | High voltage LDMOS transistor |
CN102142460B (zh) * | 2010-12-29 | 2013-10-02 | 电子科技大学 | 一种soi型p-ldmos |
US8299547B2 (en) * | 2011-01-03 | 2012-10-30 | International Business Machines Corporation | Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered dielectric plates |
US8901676B2 (en) | 2011-01-03 | 2014-12-02 | International Business Machines Corporation | Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) having a high drain-to-body breakdown voltage (Vb), a method of forming an LEDMOSFET, and a silicon-controlled rectifier (SCR) incorporating a complementary pair of LEDMOSFETs |
US8680615B2 (en) | 2011-12-13 | 2014-03-25 | Freescale Semiconductor, Inc. | Customized shield plate for a field effect transistor |
US8829570B2 (en) | 2012-03-09 | 2014-09-09 | Analog Devices, Inc. | Switching device for heterojunction integrated circuits and methods of forming the same |
US9142625B2 (en) | 2012-10-12 | 2015-09-22 | Nxp B.V. | Field plate assisted resistance reduction in a semiconductor device |
US9245960B2 (en) | 2013-02-08 | 2016-01-26 | Globalfoundries Inc. | Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered airgap field plates |
US9275991B2 (en) | 2013-02-13 | 2016-03-01 | Analog Devices, Inc. | Apparatus for transceiver signal isolation and voltage clamp |
US9673187B2 (en) | 2015-04-07 | 2017-06-06 | Analog Devices, Inc. | High speed interface protection apparatus |
US9831233B2 (en) | 2016-04-29 | 2017-11-28 | Analog Devices Global | Apparatuses for communication systems transceiver interfaces |
US10734806B2 (en) | 2016-07-21 | 2020-08-04 | Analog Devices, Inc. | High voltage clamps with transient activation and activation release control |
US10249609B2 (en) | 2017-08-10 | 2019-04-02 | Analog Devices, Inc. | Apparatuses for communication systems transceiver interfaces |
US10700056B2 (en) | 2018-09-07 | 2020-06-30 | Analog Devices, Inc. | Apparatus for automotive and communication systems transceiver interfaces |
US11387648B2 (en) | 2019-01-10 | 2022-07-12 | Analog Devices International Unlimited Company | Electrical overstress protection with low leakage current for high voltage tolerant high speed interfaces |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3063085D1 (en) | 1979-05-30 | 1983-06-16 | Xerox Corp | Monolithic hvmosfet array |
KR100416589B1 (ko) * | 2001-01-06 | 2004-02-05 | 삼성전자주식회사 | 스위칭 특성을 개선하고 누설전류를 감소시키는 전하펌프회로 및 이를 구비하는 위상동기 루프 |
JP4796238B2 (ja) * | 2001-04-27 | 2011-10-19 | Okiセミコンダクタ株式会社 | ワード線駆動回路 |
US6627958B2 (en) * | 2001-12-10 | 2003-09-30 | Koninklijke Philips Electronics N.V. | Lateral high voltage semiconductor device having a sense terminal and method for sensing a drain voltage of the same |
-
2002
- 2002-05-21 US US10/152,235 patent/US6717214B2/en not_active Expired - Lifetime
-
2003
- 2003-05-20 KR KR10-2004-7018551A patent/KR20040111631A/ko not_active Application Discontinuation
- 2003-05-20 CN CNB038115719A patent/CN100505305C/zh not_active Expired - Fee Related
- 2003-05-20 WO PCT/IB2003/002142 patent/WO2003098690A2/en active Application Filing
- 2003-05-20 EP EP03725509A patent/EP1509955B1/en not_active Expired - Lifetime
- 2003-05-20 JP JP2004506084A patent/JP2005526400A/ja not_active Withdrawn
- 2003-05-20 AU AU2003228040A patent/AU2003228040A1/en not_active Abandoned
- 2003-05-20 AT AT03725509T patent/ATE510302T1/de not_active IP Right Cessation
-
2004
- 2004-02-13 US US10/779,093 patent/US6833726B2/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101593774B (zh) * | 2009-06-10 | 2012-05-23 | 苏州博创集成电路设计有限公司 | P型绝缘体上硅的横向双扩散金属氧化物半导体晶体管 |
CN101714552B (zh) * | 2009-11-09 | 2011-05-25 | 苏州博创集成电路设计有限公司 | 等离子显示驱动芯片用高低压器件及制备方法 |
CN103762156A (zh) * | 2013-12-31 | 2014-04-30 | 上海新傲科技股份有限公司 | 半导体衬底的制作方法、半导体衬底以及高压晶体管 |
Also Published As
Publication number | Publication date |
---|---|
AU2003228040A1 (en) | 2003-12-02 |
US20030218211A1 (en) | 2003-11-27 |
US6717214B2 (en) | 2004-04-06 |
JP2005526400A (ja) | 2005-09-02 |
US20040164351A1 (en) | 2004-08-26 |
CN100505305C (zh) | 2009-06-24 |
AU2003228040A8 (en) | 2003-12-02 |
WO2003098690A2 (en) | 2003-11-27 |
EP1509955B1 (en) | 2011-05-18 |
WO2003098690A3 (en) | 2004-04-22 |
KR20040111631A (ko) | 2004-12-31 |
EP1509955A2 (en) | 2005-03-02 |
US6833726B2 (en) | 2004-12-21 |
ATE510302T1 (de) | 2011-06-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: NXP CO., LTD. Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V. Effective date: 20070907 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20070907 Address after: Holland Ian Deho Finn Applicant after: Koninkl Philips Electronics NV Address before: Holland Ian Deho Finn Applicant before: Koninklijke Philips Electronics N.V. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090624 Termination date: 20210520 |