AU2003228040A1 - Soi-ldmos devices - Google Patents

Soi-ldmos devices

Info

Publication number
AU2003228040A1
AU2003228040A1 AU2003228040A AU2003228040A AU2003228040A1 AU 2003228040 A1 AU2003228040 A1 AU 2003228040A1 AU 2003228040 A AU2003228040 A AU 2003228040A AU 2003228040 A AU2003228040 A AU 2003228040A AU 2003228040 A1 AU2003228040 A1 AU 2003228040A1
Authority
AU
Australia
Prior art keywords
soi
ldmos devices
ldmos
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003228040A
Other versions
AU2003228040A8 (en
Inventor
Benoit Dufort
Theodore J. Letavic
John Petruzzello
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US10/152,235 priority Critical patent/US6717214B2/en
Priority to US10/152,235 priority
Application filed by Koninklijke Philips NV filed Critical Koninklijke Philips NV
Priority to PCT/IB2003/002142 priority patent/WO2003098690A2/en
Publication of AU2003228040A1 publication Critical patent/AU2003228040A1/en
Publication of AU2003228040A8 publication Critical patent/AU2003228040A8/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7826—Lateral DMOS transistors, i.e. LDMOS transistors with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
AU2003228040A 2002-05-21 2003-05-20 Soi-ldmos devices Abandoned AU2003228040A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US10/152,235 US6717214B2 (en) 2002-05-21 2002-05-21 SOI-LDMOS device with integral voltage sense electrodes
US10/152,235 2002-05-21
PCT/IB2003/002142 WO2003098690A2 (en) 2002-05-21 2003-05-20 Soi-ldmos devices

Publications (2)

Publication Number Publication Date
AU2003228040A1 true AU2003228040A1 (en) 2003-12-02
AU2003228040A8 AU2003228040A8 (en) 2003-12-02

Family

ID=29548459

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003228040A Abandoned AU2003228040A1 (en) 2002-05-21 2003-05-20 Soi-ldmos devices

Country Status (8)

Country Link
US (2) US6717214B2 (en)
EP (1) EP1509955B1 (en)
JP (1) JP2005526400A (en)
KR (1) KR20040111631A (en)
CN (1) CN100505305C (en)
AT (1) AT510302T (en)
AU (1) AU2003228040A1 (en)
WO (1) WO2003098690A2 (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4337983B2 (en) * 2005-02-17 2009-09-30 国立大学法人 東京大学 Mixed semiconductor integrated circuit and manufacturing method thereof
DE102005039804B4 (en) * 2005-08-22 2009-07-09 Infineon Technologies Ag Lateral semiconductor device with drift path and potential distribution structure, use of the semiconductor device and method for producing the same
DE102006001922B3 (en) * 2006-01-14 2007-05-03 Infineon Technologies Austria Ag Lateral power transistor used as a MOSFET or an insulated gate bipolar transistor comprises a source zone, a drain zone, a drift zone and a body zone arranged in a semiconductor layer and an electrode layer
JP4989085B2 (en) * 2006-02-24 2012-08-01 オンセミコンダクター・トレーディング・リミテッド Semiconductor device and manufacturing method thereof
JP5307973B2 (en) * 2006-02-24 2013-10-02 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー Semiconductor device
US8734494B2 (en) * 2007-04-19 2014-05-27 Stryker Trauma Gmbh Hip fracture device with static locking mechanism allowing compression
ES2393679T3 (en) * 2007-04-19 2012-12-27 Stryker Trauma Gmbh Hip fracture device with cylinder and end cap for load control
US8174071B2 (en) * 2008-05-02 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. High voltage LDMOS transistor
CN101593774B (en) * 2009-06-10 2012-05-23 苏州博创集成电路设计有限公司 Laterally double diffused metal oxide semiconductor transistor of silicon on P-type insulator
CN101714552B (en) * 2009-11-09 2011-05-25 苏州博创集成电路设计有限公司 High-low voltage device for plasma display driving chip and preparation method
CN102142460B (en) * 2010-12-29 2013-10-02 电子科技大学 SOI (Silicon On Insulator) type P-LDMOS (Lateral Diffused Metal-Oxide Semiconductor)
US8901676B2 (en) 2011-01-03 2014-12-02 International Business Machines Corporation Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) having a high drain-to-body breakdown voltage (Vb), a method of forming an LEDMOSFET, and a silicon-controlled rectifier (SCR) incorporating a complementary pair of LEDMOSFETs
US8299547B2 (en) 2011-01-03 2012-10-30 International Business Machines Corporation Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered dielectric plates
US8680615B2 (en) 2011-12-13 2014-03-25 Freescale Semiconductor, Inc. Customized shield plate for a field effect transistor
US8829570B2 (en) 2012-03-09 2014-09-09 Analog Devices, Inc. Switching device for heterojunction integrated circuits and methods of forming the same
US9142625B2 (en) 2012-10-12 2015-09-22 Nxp B.V. Field plate assisted resistance reduction in a semiconductor device
US9245960B2 (en) 2013-02-08 2016-01-26 Globalfoundries Inc. Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered airgap field plates
US9275991B2 (en) 2013-02-13 2016-03-01 Analog Devices, Inc. Apparatus for transceiver signal isolation and voltage clamp
CN103762156A (en) * 2013-12-31 2014-04-30 上海新傲科技股份有限公司 Manufacturing method of semiconductor substrate, semiconductor substrate and high-voltage transistor
US9673187B2 (en) 2015-04-07 2017-06-06 Analog Devices, Inc. High speed interface protection apparatus
US9831233B2 (en) 2016-04-29 2017-11-28 Analog Devices Global Apparatuses for communication systems transceiver interfaces
US10249609B2 (en) 2017-08-10 2019-04-02 Analog Devices, Inc. Apparatuses for communication systems transceiver interfaces
US10700056B2 (en) 2018-09-07 2020-06-30 Analog Devices, Inc. Apparatus for automotive and communication systems transceiver interfaces

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3063085D1 (en) * 1979-05-30 1983-06-16 Xerox Corp Monolithic hvmosfet array
KR100416589B1 (en) * 2001-01-06 2004-02-05 삼성전자주식회사 Charge pump circuit for improving switching characteristics and reducing leakage current and phase locked loop having the same
JP4796238B2 (en) * 2001-04-27 2011-10-19 Ｏｋｉセミコンダクタ株式会社 Word line drive circuit
US6627958B2 (en) * 2001-12-10 2003-09-30 Koninklijke Philips Electronics N.V. Lateral high voltage semiconductor device having a sense terminal and method for sensing a drain voltage of the same

Also Published As

Publication number Publication date
EP1509955A2 (en) 2005-03-02
US20030218211A1 (en) 2003-11-27
CN1864269A (en) 2006-11-15
AU2003228040A8 (en) 2003-12-02
WO2003098690A3 (en) 2004-04-22
KR20040111631A (en) 2004-12-31
WO2003098690A2 (en) 2003-11-27
CN100505305C (en) 2009-06-24
AT510302T (en) 2011-06-15
US6833726B2 (en) 2004-12-21
JP2005526400A (en) 2005-09-02
EP1509955B1 (en) 2011-05-18
US6717214B2 (en) 2004-04-06
US20040164351A1 (en) 2004-08-26

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase