CN1862835A - 薄膜晶体管及包括薄膜晶体管的平板显示器 - Google Patents
薄膜晶体管及包括薄膜晶体管的平板显示器 Download PDFInfo
- Publication number
- CN1862835A CN1862835A CNA2006100793973A CN200610079397A CN1862835A CN 1862835 A CN1862835 A CN 1862835A CN A2006100793973 A CNA2006100793973 A CN A2006100793973A CN 200610079397 A CN200610079397 A CN 200610079397A CN 1862835 A CN1862835 A CN 1862835A
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- semiconductor layer
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- source electrode
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Element Separation (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050033532 | 2005-04-22 | ||
KR1020050033532A KR100647690B1 (ko) | 2005-04-22 | 2005-04-22 | 박막 트랜지스터 및 이를 구비한 평판 디스플레이 장치 |
KR10-2005-0033532 | 2005-04-22 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101363771A Division CN101924140B (zh) | 2005-04-22 | 2006-04-21 | 薄膜晶体管及包括薄膜晶体管的平板显示器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1862835A true CN1862835A (zh) | 2006-11-15 |
CN1862835B CN1862835B (zh) | 2011-05-18 |
Family
ID=36716632
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101363771A Active CN101924140B (zh) | 2005-04-22 | 2006-04-21 | 薄膜晶体管及包括薄膜晶体管的平板显示器 |
CN2006100793973A Active CN1862835B (zh) | 2005-04-22 | 2006-04-21 | 薄膜晶体管及包括薄膜晶体管的平板显示器 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101363771A Active CN101924140B (zh) | 2005-04-22 | 2006-04-21 | 薄膜晶体管及包括薄膜晶体管的平板显示器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7550766B2 (zh) |
EP (1) | EP1715531A1 (zh) |
JP (2) | JP2006303499A (zh) |
KR (1) | KR100647690B1 (zh) |
CN (2) | CN101924140B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102696110A (zh) * | 2009-09-22 | 2012-09-26 | 应用科学研究Tno荷兰组织 | 集成电路 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5176414B2 (ja) * | 2007-07-11 | 2013-04-03 | 株式会社リコー | 有機トランジスタアレイ及び表示装置 |
KR101424012B1 (ko) | 2008-03-04 | 2014-08-04 | 삼성디스플레이 주식회사 | 표시장치와 그 제조방법 |
JP5442234B2 (ja) * | 2008-10-24 | 2014-03-12 | 株式会社半導体エネルギー研究所 | 半導体装置及び表示装置 |
JP5262613B2 (ja) * | 2008-11-20 | 2013-08-14 | パナソニック株式会社 | 光学反射素子 |
JP6033071B2 (ja) * | 2011-12-23 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2015019000A (ja) * | 2013-07-12 | 2015-01-29 | ソニー株式会社 | 電子デバイス及びその製造方法、並びに、画像表示装置及び画像表示装置を構成する基板 |
GB2556313B (en) * | 2016-02-10 | 2020-12-23 | Flexenable Ltd | Semiconductor patterning |
KR102551789B1 (ko) | 2016-06-15 | 2023-07-07 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
KR102510397B1 (ko) * | 2017-09-01 | 2023-03-16 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 이를 포함하는 디스플레이 장치 |
CN112793493A (zh) * | 2021-02-01 | 2021-05-14 | 山东奥斯登房车有限公司 | 一种工程车用遥控舱 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3079306B2 (ja) * | 1996-05-28 | 2000-08-21 | 松下電器産業株式会社 | 液晶表示装置の薄膜トランジスタアレイ基板 |
JPH09318975A (ja) | 1996-05-30 | 1997-12-12 | Nec Corp | 薄膜電界効果型トランジスタ素子アレイおよびその製造 方法 |
JP4897995B2 (ja) | 1999-11-05 | 2012-03-14 | 三星電子株式会社 | 液晶表示装置用薄膜トランジスタ基板 |
GB2362262A (en) * | 2000-05-11 | 2001-11-14 | Ibm | Thin film transistor (TFT) with conductive channel which may be p-type or n-type in response to a gate voltage |
US6696370B2 (en) | 2000-06-16 | 2004-02-24 | The Penn State Research Foundation | Aqueous-based photolithography on organic materials |
DE10212639A1 (de) | 2002-03-21 | 2003-10-16 | Siemens Ag | Vorrichtung und Verfahren zur Laserstrukturierung von Funktionspolymeren und Verwendungen |
JP2004103905A (ja) * | 2002-09-11 | 2004-04-02 | Pioneer Electronic Corp | 有機半導体素子 |
JP4419383B2 (ja) * | 2002-11-28 | 2010-02-24 | コニカミノルタホールディングス株式会社 | 薄膜トランジスタ用シートの製造方法 |
KR100904523B1 (ko) * | 2002-12-26 | 2009-06-25 | 엘지디스플레이 주식회사 | 액티브 매트릭스형 유기전계발광 소자용 박막트랜지스터 |
US7384814B2 (en) | 2003-05-20 | 2008-06-10 | Polymer Vision Limited | Field effect transistor including an organic semiconductor and a dielectric layer having a substantially same pattern |
JP4325479B2 (ja) | 2003-07-17 | 2009-09-02 | セイコーエプソン株式会社 | 有機トランジスタの製造方法、アクティブマトリクス装置の製造方法、表示装置の製造方法および電子機器の製造方法 |
US6953705B2 (en) | 2003-07-22 | 2005-10-11 | E. I. Du Pont De Nemours And Company | Process for removing an organic layer during fabrication of an organic electronic device |
JP2005079283A (ja) | 2003-08-29 | 2005-03-24 | Seiko Epson Corp | 薄膜半導体装置及びその製造方法、電気光学装置、並びに電子機器 |
JP2005079225A (ja) * | 2003-08-29 | 2005-03-24 | Institute Of Physical & Chemical Research | 有機材料パターンの形成方法及び薄膜トランジスタの製造方法 |
JP2005079560A (ja) * | 2003-09-04 | 2005-03-24 | Hitachi Ltd | 薄膜トランジスタ,表示装置、およびその製造方法 |
KR100544144B1 (ko) * | 2004-05-22 | 2006-01-23 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 구비한 평판표시장치 |
-
2005
- 2005-04-22 KR KR1020050033532A patent/KR100647690B1/ko active IP Right Grant
-
2006
- 2006-04-13 US US11/403,011 patent/US7550766B2/en active Active
- 2006-04-17 JP JP2006113124A patent/JP2006303499A/ja active Pending
- 2006-04-21 CN CN2010101363771A patent/CN101924140B/zh active Active
- 2006-04-21 EP EP06112894A patent/EP1715531A1/en not_active Ceased
- 2006-04-21 CN CN2006100793973A patent/CN1862835B/zh active Active
-
2010
- 2010-06-02 JP JP2010127174A patent/JP2010239143A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102696110A (zh) * | 2009-09-22 | 2012-09-26 | 应用科学研究Tno荷兰组织 | 集成电路 |
Also Published As
Publication number | Publication date |
---|---|
EP1715531A1 (en) | 2006-10-25 |
US7550766B2 (en) | 2009-06-23 |
CN101924140A (zh) | 2010-12-22 |
JP2006303499A (ja) | 2006-11-02 |
US20060237789A1 (en) | 2006-10-26 |
CN1862835B (zh) | 2011-05-18 |
CN101924140B (zh) | 2013-01-16 |
JP2010239143A (ja) | 2010-10-21 |
KR20060111273A (ko) | 2006-10-26 |
KR100647690B1 (ko) | 2006-11-23 |
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