CN1840602A - 制备具有高分散稳定性的抛光浆料的方法 - Google Patents
制备具有高分散稳定性的抛光浆料的方法 Download PDFInfo
- Publication number
- CN1840602A CN1840602A CNA2006100584840A CN200610058484A CN1840602A CN 1840602 A CN1840602 A CN 1840602A CN A2006100584840 A CNA2006100584840 A CN A2006100584840A CN 200610058484 A CN200610058484 A CN 200610058484A CN 1840602 A CN1840602 A CN 1840602A
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- Prior art keywords
- polishing
- slurry
- weight
- polishing particles
- acid
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims abstract description 93
- 239000002002 slurry Substances 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title claims abstract description 48
- 239000006185 dispersion Substances 0.000 title claims abstract description 46
- 239000002245 particle Substances 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000002253 acid Substances 0.000 claims abstract description 16
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 22
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 22
- 239000003795 chemical substances by application Substances 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 19
- 238000006116 polymerization reaction Methods 0.000 claims description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 229920002125 Sokalan® Polymers 0.000 claims description 4
- 125000005210 alkyl ammonium group Chemical group 0.000 claims description 4
- 150000001412 amines Chemical class 0.000 claims description 4
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 4
- 239000004584 polyacrylic acid Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000001354 calcination Methods 0.000 claims description 3
- GHLITDDQOMIBFS-UHFFFAOYSA-H cerium(3+);tricarbonate Chemical compound [Ce+3].[Ce+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O GHLITDDQOMIBFS-UHFFFAOYSA-H 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- CDULGHZNHURECF-UHFFFAOYSA-N 2,3-dimethylaniline 2,4-dimethylaniline 2,5-dimethylaniline 2,6-dimethylaniline 3,4-dimethylaniline 3,5-dimethylaniline Chemical group CC1=CC=C(N)C(C)=C1.CC1=CC=C(C)C(N)=C1.CC1=CC(C)=CC(N)=C1.CC1=CC=C(N)C=C1C.CC1=CC=CC(N)=C1C.CC1=CC=CC(C)=C1N CDULGHZNHURECF-UHFFFAOYSA-N 0.000 claims description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 2
- IMPPGHMHELILKG-UHFFFAOYSA-N 4-ethoxyaniline Chemical compound CCOC1=CC=C(N)C=C1 IMPPGHMHELILKG-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- ITBPIKUGMIZTJR-UHFFFAOYSA-N [bis(hydroxymethyl)amino]methanol Chemical compound OCN(CO)CO ITBPIKUGMIZTJR-UHFFFAOYSA-N 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 claims description 2
- 229960001231 choline Drugs 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 2
- JEUXZUSUYIHGNL-UHFFFAOYSA-N n,n-diethylethanamine;hydrate Chemical compound O.CCN(CC)CC JEUXZUSUYIHGNL-UHFFFAOYSA-N 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- BJAARRARQJZURR-UHFFFAOYSA-N trimethylazanium;hydroxide Chemical compound O.CN(C)C BJAARRARQJZURR-UHFFFAOYSA-N 0.000 claims description 2
- 229960004418 trolamine Drugs 0.000 claims description 2
- 229910052845 zircon Inorganic materials 0.000 claims description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims description 2
- CCIVGXIOQKPBKL-UHFFFAOYSA-N ethanesulfonic acid Chemical compound CCS(O)(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-N 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- -1 vanadine Chemical compound 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 13
- 125000000129 anionic group Chemical group 0.000 abstract description 3
- 230000000052 comparative effect Effects 0.000 description 40
- 229910000420 cerium oxide Inorganic materials 0.000 description 20
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 20
- 230000006641 stabilisation Effects 0.000 description 13
- 238000011105 stabilization Methods 0.000 description 13
- 238000012360 testing method Methods 0.000 description 13
- 239000000243 solution Substances 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 8
- 239000012153 distilled water Substances 0.000 description 7
- 239000000725 suspension Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000003756 stirring Methods 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000005352 clarification Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- BEGLCMHJXHIJLR-UHFFFAOYSA-N methylisothiazolinone Chemical compound CN1SC=CC1=O BEGLCMHJXHIJLR-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000193 polymethacrylate Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 159000000000 sodium salts Chemical class 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 206010013786 Dry skin Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 1
- 239000004141 Sodium laurylsulphate Substances 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- DHNRXBZYEKSXIM-UHFFFAOYSA-N chloromethylisothiazolinone Chemical compound CN1SC(Cl)=CC1=O DHNRXBZYEKSXIM-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 150000002632 lipids Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- 238000002525 ultrasonication Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000001238 wet grinding Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
浆料中的碳含量(重量百分比) | |
例1 | 0.403 |
例2 | 0.526 |
例3 | 0.485 |
对比例1 | 0.196 |
对比例2 | 0.182 |
对比例3 | 0.115 |
对比例4 | 0.184 |
对比例5 | 0.065 |
对比例6 | 0.287 |
氧化物膜的抛光速率(/min.) | 氮化物膜的抛光速率(/min.) | 氧化物膜的抛光速率∶氮化物膜的抛光速率(选择比例) | 划痕的数量 | |
例1 | 3586 | 126 | 28.5 | 8 |
例2 | 3722 | 142 | 26.2 | 9 |
例3 | 3542 | 105 | 33.7 | 11 |
对比例1 | 3254 | 117 | 27.8 | 36 |
对比例2 | 3025 | 129 | 23.5 | 49 |
对比例3 | 3159 | 124 | 25.5 | 66 |
对比例4 | 3355 | 131 | 25.6 | 42 |
对比例5 | 1523 | 98 | 15.5 | 132 |
对比例6 | 2568 | 369 | 7.0 | 94 |
颗粒大小变化 | 颗粒沉降程度 | |||
混合前(nm) | 混合后(nm) | 2小时 | 6小时 | |
例1 | 191.2 | 216.7 | ○ | ○ |
例2 | 220.3 | 245.6 | ○ | ○ |
例3 | 203.6 | 238.5 | ○ | ○ |
对比例1 | 212.9 | 1940.3 | △ | × |
对比例2 | 256.3 | 2898.0 | △ | × |
对比例3 | 242.3 | 2650.2 | △ | × |
对比例4 | 180.6 | 1737.5 | △ | × |
对比例5 | 1286.3 | 3675.5 | × | × |
对比例6 | 215.6 | 2392.5 | × | × |
抛光速率的变化(/min) | ||||
初始 | 10天 | 60天 | 90天 | |
例1 | 3586 | 3614 | 3525 | 3550 |
对比例1 | 3254 | 3003 | 2500 | 2200 |
对比例2 | 3025 | 2600 | 2158 | 1985 |
Claims (14)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0025496 | 2005-03-28 | ||
KR20050025496 | 2005-03-28 | ||
KR1020050025496 | 2005-03-28 | ||
KR20050076021 | 2005-08-19 | ||
KR10-2005-0076021 | 2005-08-19 | ||
KR1020050076021 | 2005-08-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1840602A true CN1840602A (zh) | 2006-10-04 |
CN1840602B CN1840602B (zh) | 2011-05-04 |
Family
ID=37033780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006100584840A Expired - Fee Related CN1840602B (zh) | 2005-03-28 | 2006-03-28 | 制备具有高分散稳定性的抛光浆料的方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US20060213126A1 (zh) |
JP (1) | JP5198738B2 (zh) |
KR (1) | KR101134590B1 (zh) |
CN (1) | CN1840602B (zh) |
DE (1) | DE102006013728A1 (zh) |
TW (1) | TWI387626B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101671525B (zh) * | 2009-09-01 | 2013-04-10 | 湖南皓志新材料股份有限公司 | 一种改善稀土抛光粉悬浮性的方法 |
CN114502324A (zh) * | 2019-08-21 | 2022-05-13 | 应用材料公司 | 抛光垫的增材制造 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007062572A1 (de) * | 2007-12-22 | 2009-06-25 | Evonik Degussa Gmbh | Ceroxid und kolloidales Siliciumdioxid enthaltende Dispersion |
DE102008008184A1 (de) * | 2008-02-08 | 2009-08-13 | Evonik Degussa Gmbh | Verfahren zum Polieren einer Siliciumoberfläche mittels einer ceroxidhaltigen Dispersion |
DE102008008183A1 (de) * | 2008-02-08 | 2009-08-13 | Evonik Degussa Gmbh | Ceroxidpartikel enthaltende Dispersion und deren Verwendung zum Polieren von Gläsern |
JP5819036B2 (ja) * | 2008-03-25 | 2015-11-18 | 三井金属鉱業株式会社 | セリウム系研摩材スラリー |
DE102008002321A1 (de) * | 2008-06-10 | 2009-12-17 | Evonik Degussa Gmbh | Ceroxid und partikuläres Additiv enthaltende Dispersion |
JP5261065B2 (ja) * | 2008-08-08 | 2013-08-14 | シャープ株式会社 | 半導体装置の製造方法 |
JP2011218494A (ja) * | 2010-04-09 | 2011-11-04 | Mitsui Mining & Smelting Co Ltd | 研摩スラリー及びその研摩方法 |
JP5957292B2 (ja) * | 2012-05-18 | 2016-07-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法 |
KR101406763B1 (ko) * | 2012-12-04 | 2014-06-19 | 주식회사 케이씨텍 | 슬러리 조성물 및 첨가제 조성물 |
KR102178213B1 (ko) | 2013-03-12 | 2020-11-12 | 고쿠리쓰다이가쿠호진 규슈다이가쿠 | 연마 패드 및 연마 방법 |
JP6233296B2 (ja) | 2014-12-26 | 2017-11-22 | 株式会社Sumco | 砥粒の評価方法、および、シリコンウェーハの製造方法 |
CN109807692A (zh) * | 2017-11-21 | 2019-05-28 | 中芯国际集成电路制造(上海)有限公司 | 一种研磨液、制备研磨液的方法和化学机械研磨方法 |
CN115141548B (zh) * | 2021-03-15 | 2023-12-05 | 拓米(成都)应用技术研究院有限公司 | 一种高悬浮性氧化铈抛光液及其抛光工艺和应用 |
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JPH10154672A (ja) * | 1996-09-30 | 1998-06-09 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
EP0850887B1 (en) * | 1996-12-26 | 2000-03-22 | Hoya Corporation | Method for manufacturing glass product by press forming |
JPH11181403A (ja) * | 1997-12-18 | 1999-07-06 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
KR100797218B1 (ko) * | 1998-12-25 | 2008-01-23 | 히다치 가세고교 가부시끼가이샤 | Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법 |
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JP4555936B2 (ja) * | 1999-07-21 | 2010-10-06 | 日立化成工業株式会社 | Cmp研磨液 |
TW501197B (en) * | 1999-08-17 | 2002-09-01 | Hitachi Chemical Co Ltd | Polishing compound for chemical mechanical polishing and method for polishing substrate |
JP3525824B2 (ja) * | 1999-09-17 | 2004-05-10 | 日立化成工業株式会社 | Cmp研磨液 |
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US6964923B1 (en) | 2000-05-24 | 2005-11-15 | International Business Machines Corporation | Selective polishing with slurries containing polyelectrolytes |
US20040211337A1 (en) * | 2001-08-20 | 2004-10-28 | Lee In Yeon | Polishing slurry comprising silica-coated ceria |
KR100442873B1 (ko) * | 2002-02-28 | 2004-08-02 | 삼성전자주식회사 | 화학적 기계적 폴리싱 슬러리 및 이를 사용한 화학적기계적 폴리싱 방법 |
KR100477939B1 (ko) * | 2002-04-15 | 2005-03-18 | 주식회사 엘지화학 | 단결정 산화세륨 분말의 제조방법 |
JP2003064351A (ja) * | 2002-06-04 | 2003-03-05 | Hitachi Chem Co Ltd | Cmp研磨液 |
JP2004335897A (ja) * | 2003-05-09 | 2004-11-25 | Jsr Corp | 化学機械研磨用水系分散体 |
KR101090913B1 (ko) * | 2004-08-11 | 2011-12-08 | 주식회사 동진쎄미켐 | 화학 기계적 연마를 위한 산화세륨 연마입자 분산액 및 그제조방법 |
US7504044B2 (en) * | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
US7291280B2 (en) * | 2004-12-28 | 2007-11-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multi-step methods for chemical mechanical polishing silicon dioxide and silicon nitride |
WO2006086265A2 (en) * | 2005-02-07 | 2006-08-17 | Applied Materials, Inc. | Method and composition for polishing a substrate |
-
2006
- 2006-03-24 DE DE102006013728A patent/DE102006013728A1/de not_active Ceased
- 2006-03-24 US US11/389,396 patent/US20060213126A1/en not_active Abandoned
- 2006-03-24 KR KR1020060026820A patent/KR101134590B1/ko not_active IP Right Cessation
- 2006-03-27 TW TW095110532A patent/TWI387626B/zh not_active IP Right Cessation
- 2006-03-28 CN CN2006100584840A patent/CN1840602B/zh not_active Expired - Fee Related
- 2006-03-28 JP JP2006087220A patent/JP5198738B2/ja not_active Expired - Fee Related
-
2009
- 2009-05-13 US US12/464,955 patent/US20090229189A1/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101671525B (zh) * | 2009-09-01 | 2013-04-10 | 湖南皓志新材料股份有限公司 | 一种改善稀土抛光粉悬浮性的方法 |
CN114502324A (zh) * | 2019-08-21 | 2022-05-13 | 应用材料公司 | 抛光垫的增材制造 |
CN114502324B (zh) * | 2019-08-21 | 2024-05-03 | 应用材料公司 | 抛光垫的增材制造 |
Also Published As
Publication number | Publication date |
---|---|
JP2006279050A (ja) | 2006-10-12 |
TW200643130A (en) | 2006-12-16 |
US20090229189A1 (en) | 2009-09-17 |
US20060213126A1 (en) | 2006-09-28 |
TWI387626B (zh) | 2013-03-01 |
DE102006013728A1 (de) | 2006-10-19 |
CN1840602B (zh) | 2011-05-04 |
KR101134590B1 (ko) | 2012-04-09 |
JP5198738B2 (ja) | 2013-05-15 |
KR20060103858A (ko) | 2006-10-04 |
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