CN1816908A - 芯片焊接 - Google Patents

芯片焊接 Download PDF

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CN1816908A
CN1816908A CNA2004800188867A CN200480018886A CN1816908A CN 1816908 A CN1816908 A CN 1816908A CN A2004800188867 A CNA2004800188867 A CN A2004800188867A CN 200480018886 A CN200480018886 A CN 200480018886A CN 1816908 A CN1816908 A CN 1816908A
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chip
adhesive layer
laser
cutting
processing
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CN1816908B (zh
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A·博伊尔
D·吉伦
M·法尔萨里
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Electro Scientific Industries Inc
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Xsil Technology Ltd
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Abstract

本发明公开了一种芯片焊接方法和设备，对通过粘合层12粘合在载体带13上的晶片衬底11进行激光加工以穿过晶片衬底并穿过粘合层，至多在载体带上划线以便形成带有附着单切粘合层的单切的芯片15，而粘合层12与载体带13基本没有分层或基本不产生来自粘合层12的毛刺。载体带13优选地通过紫外线固化，以便从载体带上释放粘合层。单切的芯片被拾取并放置在芯片垫上，粘合层12优选地通过加热固化从而将芯片粘合到芯片垫。

Description

芯片焊接
技术领域
本发明涉及芯片焊接。
背景技术
使用带有在基材载体带(carrier tape)上传送以便直接将芯片焊接到芯片垫上的芯片附着膜(DAF)的芯片在微电子工业中众所周知。当从载体带上拾取单切芯片(singulated die)时，在芯片的下表面上具有粘合层，并且在将芯片放置在芯片垫上之后，通过加热使粘合层固化以将芯片粘合到芯片垫(die pad)。图1示出了在切割前安装在DAF粘合层12和载体基底(carrier base)13上的晶片11的这样一种结构件10的横截面图。如图2所示，在切割没有DAF的晶片时，通过切穿晶片和DAF形成沟道14，并且在基膜载体带13内留下浅沟槽16，晶片11和DAF 12被单切以形成单切芯片和DAF 15。
已知的切割带有DAF的晶片使用机械锯而不使用用来切割不带DAF晶片的高速旋转的切割锯条，以避免粘合层粘结在锯条上。然而，这种高速的机械切割容易导致DAF和基膜分层并产生毛刺，导致产量的损失。由机械锯所产生的毛刺可以是几毫米长的粘合层条。这些条可能通过锯条或在后续处理中携带到上表面而接触到芯片的上表面，尤其是可能会干扰芯片的附着处理。在某些情况下，为了避免与使用DAF时发生分层以及产生毛刺有关的问题，在机械锯切割后将粘合剂放置在每个芯片上。这个处理极其浪费时间而且效率很低。
发明内容
本发明的一个目的是至少对现有技术中存在的上述难点进行改进。
根据本发明的第一方面提供一种芯片焊接方法，其包括以下步骤：提供一种结构件，其包括由粘合层从载体基底装置分隔的晶片衬底；通过晶片衬底和通过粘合层的激光加工，至多只对载体基底装置进行划线以便形成带有附着的单切粘合层的单切的芯片；使结构件固化以便将附着的单切粘合层从载体基底装置上释放；将芯片和附着的单切粘合层拾取并放置在芯片垫上；以及将附着的单切粘合层固化以便将芯片粘合到芯片垫。
有利地，提供结构件的步骤包括通过第一粘合剂提供粘合到载体基底装置的粘合层，将结构件固化的步骤包括使第一粘合剂固化。
优选地，激光加工的步骤包括使用第一激光束以经选择的激光脉冲功率、激光脉冲重复率、激光脉冲宽度、激光束扫描速度和激光波长的第一加工方案，对晶片衬底进行激光加工；使用带有第二加工方案的第二激光束对粘合层进行加工，并且使用带有第三加工方案的第三激光束对载体基底装置进行加工，以使加工速度最大化，同时提供具有预定质量的单切的芯片，而粘合层和载体基底装置基本没有分层或基本不产生毛刺。
方便地，第一加工方案、第二加工方案和第三加工方案中的至少两个是相同的加工方案。
有利地，将结构件固化的步骤包括使用紫外线进行固化。
方便地，将附着的单切粘合层固化的步骤包括对粘合层进行加热固化。
有利地，加工晶片衬底的步骤包括加工在晶片衬底中的盲孔(blindvia)或通过晶片衬底和芯片附着膜的通道。
优选地，激光加工的步骤包括进一步的步骤，即在激光加工之后对结构件进行清洗以便从单切芯片上除去累积的激光加工碎屑。
方便地，提供结构件的步骤包括提供具有保护膜的结构件用以保护结构件免受激光加工中所产生的碎屑影响；并且清洗结构件的步骤包括除去保护膜和累积在其上的碎屑。
有利地，提供结构件的步骤包括提供具有厚度小于800微米的晶片衬底的结构件。
优选地，激光加工的步骤包括提供用于激光加工的辅助气体环境。
有利地，提供辅助气体环境的步骤包括提供在其中光离解产生活性基的气体环境。
优选地，提供气体环境的步骤减少了激光加工位置周围固态加工碎屑的沉积。
方便地，载体基底装置是下列之一：适于薄晶片切割或背面磨光(backgrinding)的切割带、非挠性带；以及玻璃或其它透明固体。
有利地，提供结构件的步骤包括提供一种包括通过粘合层从基本上非挠性的透明背面磨光的带装置面朝下分离的晶片衬底的结构件，激光加工的步骤在背面磨光晶片衬底之后进行。
可选地，拾取并放置芯片和附着的单切粘合层的步骤包括将芯片和附着的单切粘合层拾取并放置在另一芯片上以便形成多堆叠芯片封装。
根据本发明的第二方面提供一种芯片焊接设备，其包括：激光加工装置，其用于加工晶片衬底和附着在晶片衬底上的粘合层并且只是至多对下面的载体基底装置进行划线以便形成带有单切粘合层的单切芯片；第一固化装置，其用于将载体基底装置固化以使单切粘合层从载体基底装置上释放；拾取和放置装置，其用于从载体基底装置上拾取单切芯片和粘合层并将单切芯片和粘合层放置在芯片垫装置上；以及第二固化装置，其用于固化单切的芯片的单切粘合层以将单切的芯片粘合在芯片垫装置上。
优选地，激光加工装置包括：用于提供脉冲激光束的激光源装置；激光束扫描装置；和用于控制激光脉冲能量、激光波长、激光重复频率、激光脉冲宽度、激光束扫描速度和脉冲激光束的扫描数量中至少一个的控制装置。
有利地，激光加工装置还包括存储装置，用于储存激光脉冲能量、激光波长、激光重复频率、激光脉冲宽度、激光束扫描速度和脉冲激光束的扫描数量中至少一个的加工方案，由所述控制装置使用。
优选地，第一固化装置包括紫外线固化装置。
有利地，第二固化装置包括热固化(heat curing)装置。
方便地，芯片焊接设备包括用于从单切芯片上清洗激光加工碎屑的清洗装置。
有利地，晶片衬底上设有保护膜以便保护晶片衬底免受激光加工碎屑的影响，清洗装置被设置成从单切的芯片上除去保护膜。
方便地，芯片焊接设备适合的载体基底装置是以下其中之一：适于薄晶片切割或背面磨光的切割带、非挠性带；和玻璃或其它透明固体。
有利地，芯片焊接设备适于加工结构件，该结构件包括通过粘合层从基本上非挠性的透明背面磨光的带装置面朝下分离的晶片衬底。
附图说明
下面通过举例的方式，并参考附图对本发明进行详细说明，其中：
图1是已知的晶片、粘合层和载体膜结构的纵截面图；
图2是切割之后图1的纵截面图；
图3是根据本发明图1中的结构件的晶片的激光加工的透视图；
图4是根据本发明图1中的结构件的粘合层的激光加工的透视示意图；以及
图5是根据本发明图1中的结构件的载体膜的激光划线的透视示意图。
具体实施方式
在附图中，相同的附图标记代表相同的部件。
参考附图，使用激光束31、32和33切割结构件10，结构件10包括安装在载体基底13上的晶片11和DAF 12，能够加工通过晶片和DAF而基本上不会导致粘合层12与载体基底13之间的分层或来自例如粘合层12的任何毛刺。
载体基底13可以是例如在工业中所使用的任何公知的载体膜，用在薄膜切割或背面磨光中的基本上非挠性的支撑体，或者玻璃或者其它透明的固体。可选地，载体基底可以是非挠性的透明背面磨光带，背面磨光带在其上面朝下安装有晶片，用于在背面磨光处理后进行切割。
参考图3至图5，通过严格控制激光束31、32和33的脉冲功率、脉冲重复率、脉冲宽度、激光波长和激光束扫描速度等加工参数，在只在载体基底13上划线的同时可以切割晶片11和DAF 12，并且可以进行完整的单切而不产生分层和毛刺的问题。激光束的这些严格的参数可以对每层11、12和13进行优化，以对三层中的每一层以各自不同的切割策略或加工方案使用激光束31、32和33，从而使加工速度最大化，同时获得要求质量的加工芯片。
在这种情况中，根据该层材料的已知厚度和已知加工特性，使用预定数量的一个或多个扫描以预定加工参数对每层11、12和13进行扫描。在厚度和/或材料不是已知的情况下，则通过观察机械特性来确定被加工材料和层之间界面的特性。可选地，参数可以从要加工的晶片的样品凭经验确定。
为了使单切的效率最优化，晶片的整个加工可以在粘合层的所有加工之前进行，其可以在载体基底或每个切割路线的所有加工依次被完全加工之前进行，或者综合使用这些策略。
可选地，如果各层的加工质量可以为整个加工速度作出牺牲，则使用单独的切割策略或加工方案切割两层或所有的三层11、12和13，对于这些层的组合使用最优加工方案。
可以提供公知的平移工作台(translation table)以允许激光束进入要被加工的晶片的各部分。
虽然以对载体基底常规地进行划线为例描述了激光加工方法，但是应该理解激光加工可以选择地在粘合层与载体基底之间的分界面停止，对载体基底不进行明显地或根本上就不进行划线。
已发现本发明的激光加工处理适于高达800微米厚的晶片。
该激光加工处理不仅适于切割晶片还适于加工带有DAF的晶片中的通道结构。
本发明的激光处理可以随意地以已知的方式在活性气体环境或在光离解产生活性基的气体环境中任意地完成。在合适的活性气体环境中的激光加工将改变所产生碎屑的化学特性。具体地，在合适的条件下，合适的活性气体与处于熔化状态的碎屑之间的化学反应去除了处于气态形式的碎屑，随之减少了激光加工位置周围的固态碎屑的沉积。
接下来进行单切，在DAF固化之前，可以对单切的芯片进行清洗以便去除在激光加工过程中所产生的碎屑。可选地，晶片衬底可以由保护膜保护避免受这些碎屑影响，并且保护膜和累积的碎屑可以通过清洗去除。
一旦结构件已经被加工完，则单切的芯片的芯片焊接基本上与现有技术一样进行。载体基底13或位于载体基底、带或膜和粘合层之间的未示出的粘合剂，利用紫外线进行固化以将单切的芯片15从载体带或膜13中释放。单切的芯片15从载体基底、带或膜13上拾取，并放置在芯片垫上。可选地，可以将模15拾取并放置在另一芯片上以形成多堆叠芯片封装。单切的芯片15上的粘合层被加热固化而将单切的芯片粘合到芯片垫或者另一芯片上，进行进一步的已知的加工工艺。

Claims (25)

1.一种芯片焊接方法，其包括以下步骤：提供结构件(10)，其包括由粘合层(12)从载体基底装置(13)分隔的晶片衬底(11)；通过所述晶片衬底和通过粘合层的激光加工，至多只对所述载体基底装置进行划线以便形成带有附着的单切粘合层(12)的单切的芯片(15)；使结构件固化以便将所述附着的单切粘合层从所述载体基底装置上释放；将所述芯片和所述附着的单切粘合层拾取并放置在芯片垫上；以及将所述附着的单切粘合层固化以便将所述芯片粘合在所述芯片垫上。
2.如权利要求1所述的方法，其中，提供结构件的步骤包括通过第一粘合剂提供粘合在所述载体基底装置(13)上的粘合层，将所述结构件固化的步骤包括使所述第一粘合剂固化。
3.如权利要求1或2所述的方法，其中，激光加工的步骤包括使用第一激光束以选择的激光脉冲功率、激光脉冲重复率、激光脉冲宽度、激光波长的第一加工方案，对所述晶片衬底(11)进行激光加工；使用带有第二加工方案的第二激光束(32)对所述粘合层(12)进行加工，并且使用带有第三加工方案的第三激光束(33)对所述载体基底装置(14)进行加工，以使加工速度最大化，同时提供具有预定质量的单切的芯片，而所述粘合层和所述载体基底装置基本没有分层或基本不产生毛刺。
4.如权利要求3所述的方法，其中，所述第一加工方案、所述第二加工方案和所述第三加工方案中的至少两个是相同的加工方案。
5.如前述权利要求中任一所述的方法，其中将所述结构件(10)固化的步骤包括使用紫外线进行固化。
6.如前述权利要求中任一所述的方法，其中将所述附着的单切粘合层(12)固化的步骤包括加热固化所述粘合层。
7.如前述权利要求中任一所述的方法，其中，加工所述晶片衬底的步骤包括在所述晶片衬底(11)中加工盲孔(14)或加工穿过所述晶片衬底(11)和芯片附着膜(12)的通道。
8.如前述权利要求中任一所述的方法，其中，所述激光加工的步骤包括在激光加工之后对所述结构件进行清洗以便从所述单切的芯片(15)上除去累积的激光加工碎屑。
9.如权利要求8所述的方法，其中，提供结构件的步骤包括提供具有保护膜的结构件用以保护结构件免受激光加工过程中所产生的碎屑的影响；以及清洗所述结构件的步骤包括除去所述保护膜和累积在其上的碎屑。
10.如前述权利要求中任一所述的方法，其中，提供结构件的步骤包括提供具有厚度小于800微米的晶片衬底(11)的结构件。
11.如前述权利要求中任一所述的方法，其中，所述激光加工的步骤包括提供用于激光加工的辅助气体环境。
12.如权利要求11所述的方法，其中，提供辅助气体环境的步骤包括提供在其中光离解产生活性基的气体环境。
13.如权利要求11或12所述的方法，其中，提供气体环境的步骤减少了激光加工位置周围的固态加工碎屑的沉积。
14.如前述权利要求中任一所述的方法，其中，所述载体基底装置是下列之一：适于薄晶片切割或背面磨光的切割带、非挠性带；和玻璃或其它透明固体。
15.如前述权利要求中任一所述的方法，其中，所述提供结构件的步骤包括提供一种包括通过所述粘合层从基本上非挠性的透明背面磨光的带装置面朝下分离的晶片衬底的结构件，并且所述激光加工步骤在背面磨光所述晶片衬底之后进行。
16.如前述权利要求中任一所述的方法，其中，拾取并放置所述芯片和附着的单切粘合层的步骤包括将所述芯片和附着的单切粘合层拾取并放置在另一芯片上以便形成多堆叠芯片封装。
17.一种芯片焊接设备，其包括：激光加工装置，其被设置成用于加工晶片衬底(11)和附着到所述晶片衬底的粘合层(12)，并且只是至多对下层的载体基底装置(13)进行划线以便形成带有单切粘合层(15)的单切的芯片；第一固化装置，其被设置成用于将所述载体基底装置固化以使所述单切粘合层(12)从所述载体基底装置(13)释放；拾取和放置装置，其被设置成用于从所述载体基底装置(13)拾取所述单切的芯片和粘合层(15)并将所述单切的芯片和粘合层(15)放置在芯片垫装置上；以及第二固化装置，其被设置成用于固化所述单切的芯片的所述单切粘合层(12)以将所述单切的芯片粘合到所述芯片垫装置。
18.如权利要求17所述的芯片焊接设备，其中，所述激光加工装置包括：用于提供脉冲激光束(31、32和33)的激光源装置；激光束扫描装置；以及用于控制激光脉冲能量、激光波长、激光重复频率、激光脉冲宽度、激光束扫描速度和脉冲激光束的扫描数量中至少之一的控制装置。
19.如权利要求18所述的芯片焊接设备，其中，所述激光加工装置还包括存储装置，其用于储存激光脉冲能量、激光波长、激光重复频率、激光脉冲宽度、激光束扫描速度和脉冲激光束的扫描数量中至少之一的加工方案，由所述控制装置使用。
20.如权利要求17至19中任一所述的芯片焊接设备，其中，所述第一固化装置包括紫外线固化装置。
21.如权利要求17至20中任一所述的芯片焊接设备，其中，所述第二固化装置包括热固化装置。
22.如权利要求17至21中任一所述的芯片焊接设备，其包括用于从所述单切的芯片上清洗激光加工碎屑的清洗装置。
23.如权利要求22所述的芯片焊接设备，其中，所述晶片衬底上设置有保护膜以便保护所述晶片衬底免受激光加工碎屑的影响，并且所述清洗装置被设置成从所述单切的芯片上除去所述保护膜。
24.如权利要求17至23中任一所述的芯片焊接设备，适合于载体基底装置是以下其中之一：适于薄晶片切割或背面磨光的切割带、非挠性带；以及玻璃或其它透明固体。
25.如权利要求17至23中任一所述的芯片焊接设备，适合于加工结构件的包括通过所述粘合层从基本上非挠性的透明背面磨光的带装置面朝下分离的晶片衬底。
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GB2404280A (en) 2005-01-26
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WO2005004226A1 (en) 2005-01-13
JP4625804B2 (ja) 2011-02-02
EP1642332A1 (en) 2006-04-05
DE602004011343D1 (de) 2008-03-06
JP2009514185A (ja) 2009-04-02
GB0315623D0 (en) 2003-08-13
ATE384335T1 (de) 2008-02-15
EP1642332B1 (en) 2008-01-16
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KR20060023196A (ko) 2006-03-13
CN1816908B (zh) 2010-06-16
US7989320B2 (en) 2011-08-02

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