BE756807A - Procede pour la gravure non preferentielle du silicium par un melange gazeux, et melange gazeux pour cette gravure - Google Patents

Procede pour la gravure non preferentielle du silicium par un melange gazeux, et melange gazeux pour cette gravure

Info

Publication number
BE756807A
BE756807A BE756807DA BE756807A BE 756807 A BE756807 A BE 756807A BE 756807D A BE756807D A BE 756807DA BE 756807 A BE756807 A BE 756807A
Authority
BE
Belgium
Prior art keywords
engraving
gas mixture
preferential
silicon
mixture
Prior art date
Application number
Other languages
English (en)
Inventor
R G Hays
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE756807A publication Critical patent/BE756807A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
BE756807D 1969-09-29 Procede pour la gravure non preferentielle du silicium par un melange gazeux, et melange gazeux pour cette gravure BE756807A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86203969A 1969-09-29 1969-09-29

Publications (1)

Publication Number Publication Date
BE756807A true BE756807A (fr) 1971-03-29

Family

ID=25337473

Family Applications (1)

Application Number Title Priority Date Filing Date
BE756807D BE756807A (fr) 1969-09-29 Procede pour la gravure non preferentielle du silicium par un melange gazeux, et melange gazeux pour cette gravure

Country Status (6)

Country Link
US (1) US3679502A (fr)
JP (1) JPS4840810B1 (fr)
BE (1) BE756807A (fr)
DE (1) DE2046956A1 (fr)
FR (1) FR2062802A5 (fr)
GB (1) GB1305625A (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4052251A (en) * 1976-03-02 1977-10-04 Rca Corporation Method of etching sapphire utilizing sulfur hexafluoride
US4039357A (en) * 1976-08-27 1977-08-02 Bell Telephone Laboratories, Incorporated Etching of III-V semiconductor materials with H2 S in the preparation of heterodiodes to facilitate the deposition of cadmium sulfide
US4131496A (en) * 1977-12-15 1978-12-26 Rca Corp. Method of making silicon on sapphire field effect transistors with specifically aligned gates
US4213818A (en) * 1979-01-04 1980-07-22 Signetics Corporation Selective plasma vapor etching process
US4214946A (en) * 1979-02-21 1980-07-29 International Business Machines Corporation Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant
US4331504A (en) * 1981-06-25 1982-05-25 International Business Machines Corporation Etching process with vibrationally excited SF6
US4364793A (en) * 1981-08-28 1982-12-21 Graves Clinton G Method of etching silicon and polysilicon substrates
US4498953A (en) * 1983-07-27 1985-02-12 At&T Bell Laboratories Etching techniques
US4615764A (en) * 1984-11-05 1986-10-07 Allied Corporation SF6/nitriding gas/oxidizer plasma etch system
US4582581A (en) * 1985-05-09 1986-04-15 Allied Corporation Boron trifluoride system for plasma etching of silicon dioxide
JPH086184B2 (ja) * 1985-06-12 1996-01-24 株式会社日立製作所 表面処理方法
US6355564B1 (en) * 1999-08-26 2002-03-12 Advanced Micro Devices, Inc. Selective back side reactive ion etch
GB2399311B (en) * 2003-03-04 2005-06-15 Xsil Technology Ltd Laser machining using an active assist gas
GB2404280B (en) * 2003-07-03 2006-09-27 Xsil Technology Ltd Die bonding
US8906248B2 (en) 2011-12-13 2014-12-09 Lam Research Corporation Silicon on insulator etch
US20160351733A1 (en) 2015-06-01 2016-12-01 International Business Machines Corporation Dry etch method for texturing silicon and device

Also Published As

Publication number Publication date
FR2062802A5 (fr) 1971-06-25
JPS4840810B1 (fr) 1973-12-03
US3679502A (en) 1972-07-25
GB1305625A (fr) 1973-02-07
DE2046956A1 (de) 1971-05-06

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