JPS4840810B1 - - Google Patents

Info

Publication number
JPS4840810B1
JPS4840810B1 JP45073917A JP7391770A JPS4840810B1 JP S4840810 B1 JPS4840810 B1 JP S4840810B1 JP 45073917 A JP45073917 A JP 45073917A JP 7391770 A JP7391770 A JP 7391770A JP S4840810 B1 JPS4840810 B1 JP S4840810B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45073917A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4840810B1 publication Critical patent/JPS4840810B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/051Etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/15Silicon on sapphire SOS
JP45073917A 1969-09-29 1970-08-25 Pending JPS4840810B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86203969A 1969-09-29 1969-09-29

Publications (1)

Publication Number Publication Date
JPS4840810B1 true JPS4840810B1 (ja) 1973-12-03

Family

ID=25337473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45073917A Pending JPS4840810B1 (ja) 1969-09-29 1970-08-25

Country Status (6)

Country Link
US (1) US3679502A (ja)
JP (1) JPS4840810B1 (ja)
BE (1) BE756807A (ja)
DE (1) DE2046956A1 (ja)
FR (1) FR2062802A5 (ja)
GB (1) GB1305625A (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4052251A (en) * 1976-03-02 1977-10-04 Rca Corporation Method of etching sapphire utilizing sulfur hexafluoride
US4039357A (en) * 1976-08-27 1977-08-02 Bell Telephone Laboratories, Incorporated Etching of III-V semiconductor materials with H2 S in the preparation of heterodiodes to facilitate the deposition of cadmium sulfide
US4131496A (en) * 1977-12-15 1978-12-26 Rca Corp. Method of making silicon on sapphire field effect transistors with specifically aligned gates
US4213818A (en) * 1979-01-04 1980-07-22 Signetics Corporation Selective plasma vapor etching process
US4214946A (en) * 1979-02-21 1980-07-29 International Business Machines Corporation Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant
US4331504A (en) * 1981-06-25 1982-05-25 International Business Machines Corporation Etching process with vibrationally excited SF6
US4364793A (en) * 1981-08-28 1982-12-21 Graves Clinton G Method of etching silicon and polysilicon substrates
US4498953A (en) * 1983-07-27 1985-02-12 At&T Bell Laboratories Etching techniques
US4615764A (en) * 1984-11-05 1986-10-07 Allied Corporation SF6/nitriding gas/oxidizer plasma etch system
US4582581A (en) * 1985-05-09 1986-04-15 Allied Corporation Boron trifluoride system for plasma etching of silicon dioxide
JPH086184B2 (ja) * 1985-06-12 1996-01-24 株式会社日立製作所 表面処理方法
US6355564B1 (en) * 1999-08-26 2002-03-12 Advanced Micro Devices, Inc. Selective back side reactive ion etch
GB2399311B (en) * 2003-03-04 2005-06-15 Xsil Technology Ltd Laser machining using an active assist gas
GB2404280B (en) * 2003-07-03 2006-09-27 Xsil Technology Ltd Die bonding
US8906248B2 (en) 2011-12-13 2014-12-09 Lam Research Corporation Silicon on insulator etch
US20160351733A1 (en) 2015-06-01 2016-12-01 International Business Machines Corporation Dry etch method for texturing silicon and device

Also Published As

Publication number Publication date
DE2046956A1 (de) 1971-05-06
US3679502A (en) 1972-07-25
BE756807A (fr) 1971-03-29
FR2062802A5 (ja) 1971-06-25
GB1305625A (ja) 1973-02-07

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