GB1305625A - - Google Patents

Info

Publication number
GB1305625A
GB1305625A GB4318470A GB4318470A GB1305625A GB 1305625 A GB1305625 A GB 1305625A GB 4318470 A GB4318470 A GB 4318470A GB 4318470 A GB4318470 A GB 4318470A GB 1305625 A GB1305625 A GB 1305625A
Authority
GB
United Kingdom
Prior art keywords
silicon
etching
sept
sulphur hexafluoride
mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4318470A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1305625A publication Critical patent/GB1305625A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Abstract

1305625 Etching MOTOROLA Inc 9 Sept 1970 [29 Sept 1969] 43184/70 Heading B6J In a method for non-preferential etching of silicon, e.g. for preparing semi-conductor material, the silicon is contacted by a gaseous mixture containing sulphur hexafluoride having below 1300 p.p.m. by weight of nitrogen impurity, and a gas taken from the group hydrogen, helium or argon, whilst maintaining the temperature of said silicon between 950‹ and 1250‹ C. A silicon wafer may be heated on a quartz slab, resting on a graphite susceptor, by radio-frequency induction, the supply of sulphur hexafluoride in the gas mixture being cut off when sufficient etching has taken place. Other etchants such as ClF 3 , HCl, HF and H 2 S may be added to the mixture.
GB4318470A 1969-09-29 1970-09-09 Expired GB1305625A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86203969A 1969-09-29 1969-09-29

Publications (1)

Publication Number Publication Date
GB1305625A true GB1305625A (en) 1973-02-07

Family

ID=25337473

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4318470A Expired GB1305625A (en) 1969-09-29 1970-09-09

Country Status (6)

Country Link
US (1) US3679502A (en)
JP (1) JPS4840810B1 (en)
BE (1) BE756807A (en)
DE (1) DE2046956A1 (en)
FR (1) FR2062802A5 (en)
GB (1) GB1305625A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2144083A (en) * 1983-07-27 1985-02-27 American Telephone & Telegraph Selective etching process

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4052251A (en) * 1976-03-02 1977-10-04 Rca Corporation Method of etching sapphire utilizing sulfur hexafluoride
US4039357A (en) * 1976-08-27 1977-08-02 Bell Telephone Laboratories, Incorporated Etching of III-V semiconductor materials with H2 S in the preparation of heterodiodes to facilitate the deposition of cadmium sulfide
US4131496A (en) * 1977-12-15 1978-12-26 Rca Corp. Method of making silicon on sapphire field effect transistors with specifically aligned gates
US4213818A (en) * 1979-01-04 1980-07-22 Signetics Corporation Selective plasma vapor etching process
US4214946A (en) * 1979-02-21 1980-07-29 International Business Machines Corporation Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant
US4331504A (en) * 1981-06-25 1982-05-25 International Business Machines Corporation Etching process with vibrationally excited SF6
US4364793A (en) * 1981-08-28 1982-12-21 Graves Clinton G Method of etching silicon and polysilicon substrates
US4615764A (en) * 1984-11-05 1986-10-07 Allied Corporation SF6/nitriding gas/oxidizer plasma etch system
US4582581A (en) * 1985-05-09 1986-04-15 Allied Corporation Boron trifluoride system for plasma etching of silicon dioxide
JPH086184B2 (en) * 1985-06-12 1996-01-24 株式会社日立製作所 Surface treatment method
US6355564B1 (en) * 1999-08-26 2002-03-12 Advanced Micro Devices, Inc. Selective back side reactive ion etch
GB2399311B (en) * 2003-03-04 2005-06-15 Xsil Technology Ltd Laser machining using an active assist gas
GB2404280B (en) * 2003-07-03 2006-09-27 Xsil Technology Ltd Die bonding
US8906248B2 (en) 2011-12-13 2014-12-09 Lam Research Corporation Silicon on insulator etch
US20160351733A1 (en) 2015-06-01 2016-12-01 International Business Machines Corporation Dry etch method for texturing silicon and device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2144083A (en) * 1983-07-27 1985-02-27 American Telephone & Telegraph Selective etching process

Also Published As

Publication number Publication date
JPS4840810B1 (en) 1973-12-03
DE2046956A1 (en) 1971-05-06
US3679502A (en) 1972-07-25
BE756807A (en) 1971-03-29
FR2062802A5 (en) 1971-06-25

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees