BE756807A - PROCESS FOR NON-PREFERENTIAL ENGRAVING OF SILICON BY A GAS MIXTURE, AND GAS MIXTURE FOR THIS ENGRAVING - Google Patents
PROCESS FOR NON-PREFERENTIAL ENGRAVING OF SILICON BY A GAS MIXTURE, AND GAS MIXTURE FOR THIS ENGRAVINGInfo
- Publication number
- BE756807A BE756807A BE756807DA BE756807A BE 756807 A BE756807 A BE 756807A BE 756807D A BE756807D A BE 756807DA BE 756807 A BE756807 A BE 756807A
- Authority
- BE
- Belgium
- Prior art keywords
- engraving
- gas mixture
- preferential
- silicon
- mixture
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US86203969A | 1969-09-29 | 1969-09-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE756807A true BE756807A (en) | 1971-03-29 |
Family
ID=25337473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE756807D BE756807A (en) | 1969-09-29 | PROCESS FOR NON-PREFERENTIAL ENGRAVING OF SILICON BY A GAS MIXTURE, AND GAS MIXTURE FOR THIS ENGRAVING |
Country Status (6)
Country | Link |
---|---|
US (1) | US3679502A (en) |
JP (1) | JPS4840810B1 (en) |
BE (1) | BE756807A (en) |
DE (1) | DE2046956A1 (en) |
FR (1) | FR2062802A5 (en) |
GB (1) | GB1305625A (en) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4052251A (en) * | 1976-03-02 | 1977-10-04 | Rca Corporation | Method of etching sapphire utilizing sulfur hexafluoride |
US4039357A (en) * | 1976-08-27 | 1977-08-02 | Bell Telephone Laboratories, Incorporated | Etching of III-V semiconductor materials with H2 S in the preparation of heterodiodes to facilitate the deposition of cadmium sulfide |
US4131496A (en) * | 1977-12-15 | 1978-12-26 | Rca Corp. | Method of making silicon on sapphire field effect transistors with specifically aligned gates |
US4213818A (en) * | 1979-01-04 | 1980-07-22 | Signetics Corporation | Selective plasma vapor etching process |
US4214946A (en) * | 1979-02-21 | 1980-07-29 | International Business Machines Corporation | Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant |
US4331504A (en) * | 1981-06-25 | 1982-05-25 | International Business Machines Corporation | Etching process with vibrationally excited SF6 |
US4364793A (en) * | 1981-08-28 | 1982-12-21 | Graves Clinton G | Method of etching silicon and polysilicon substrates |
US4498953A (en) * | 1983-07-27 | 1985-02-12 | At&T Bell Laboratories | Etching techniques |
US4615764A (en) * | 1984-11-05 | 1986-10-07 | Allied Corporation | SF6/nitriding gas/oxidizer plasma etch system |
US4582581A (en) * | 1985-05-09 | 1986-04-15 | Allied Corporation | Boron trifluoride system for plasma etching of silicon dioxide |
JPH086184B2 (en) * | 1985-06-12 | 1996-01-24 | 株式会社日立製作所 | Surface treatment method |
US6355564B1 (en) * | 1999-08-26 | 2002-03-12 | Advanced Micro Devices, Inc. | Selective back side reactive ion etch |
GB2399311B (en) * | 2003-03-04 | 2005-06-15 | Xsil Technology Ltd | Laser machining using an active assist gas |
GB2404280B (en) * | 2003-07-03 | 2006-09-27 | Xsil Technology Ltd | Die bonding |
US8906248B2 (en) | 2011-12-13 | 2014-12-09 | Lam Research Corporation | Silicon on insulator etch |
US20160351733A1 (en) | 2015-06-01 | 2016-12-01 | International Business Machines Corporation | Dry etch method for texturing silicon and device |
-
0
- BE BE756807D patent/BE756807A/en unknown
-
1969
- 1969-09-29 US US862039A patent/US3679502A/en not_active Expired - Lifetime
-
1970
- 1970-08-25 JP JP45073917A patent/JPS4840810B1/ja active Pending
- 1970-09-09 GB GB4318470A patent/GB1305625A/en not_active Expired
- 1970-09-23 DE DE19702046956 patent/DE2046956A1/en active Pending
- 1970-09-29 FR FR7035244A patent/FR2062802A5/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3679502A (en) | 1972-07-25 |
DE2046956A1 (en) | 1971-05-06 |
FR2062802A5 (en) | 1971-06-25 |
JPS4840810B1 (en) | 1973-12-03 |
GB1305625A (en) | 1973-02-07 |
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