JPS5717497A - Manufacture of silicon single crystal - Google Patents

Manufacture of silicon single crystal

Info

Publication number
JPS5717497A
JPS5717497A JP8887880A JP8887880A JPS5717497A JP S5717497 A JPS5717497 A JP S5717497A JP 8887880 A JP8887880 A JP 8887880A JP 8887880 A JP8887880 A JP 8887880A JP S5717497 A JPS5717497 A JP S5717497A
Authority
JP
Japan
Prior art keywords
nitrogen
single crystal
contg
silicon single
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8887880A
Other languages
Japanese (ja)
Other versions
JPH0341437B2 (en
Inventor
Kihachirou Watanabe
Yasuhiro Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP8887880A priority Critical patent/JPS5717497A/en
Publication of JPS5717497A publication Critical patent/JPS5717497A/en
Publication of JPH0341437B2 publication Critical patent/JPH0341437B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To raise the discharge starting voltage in high frequency heating and to grow a single crystal having a larger diameter by growing a silicon singla crystal in an atmospheric gas formed by adding gaseous nitrogen or a nitrogen-contg. compound to Ar or a mixed gas of Ar and hydrogen to introduce nitrogen atoms into the crystal.
CONSTITUTION: An atmospheric gas is formed by adding gaseous nitrogen or a nitrogen-contg. compound to Ar or a mixed gas of Ar and hydrogen. The gaseous nitrogen concn. is adjusted to 0.05W3vol%. As the nitrogen-contg. compound ammonia, hydrazine or nitrogen trifluoride is used. By growing a silicon single crystal in the atmospheric gas, a silicon single crystal contg. nitrogen atoms is obtd.
COPYRIGHT: (C)1982,JPO&Japio
JP8887880A 1980-06-30 1980-06-30 Manufacture of silicon single crystal Granted JPS5717497A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8887880A JPS5717497A (en) 1980-06-30 1980-06-30 Manufacture of silicon single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8887880A JPS5717497A (en) 1980-06-30 1980-06-30 Manufacture of silicon single crystal

Publications (2)

Publication Number Publication Date
JPS5717497A true JPS5717497A (en) 1982-01-29
JPH0341437B2 JPH0341437B2 (en) 1991-06-24

Family

ID=13955252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8887880A Granted JPS5717497A (en) 1980-06-30 1980-06-30 Manufacture of silicon single crystal

Country Status (1)

Country Link
JP (1) JPS5717497A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60251190A (en) * 1984-05-25 1985-12-11 Shin Etsu Handotai Co Ltd Preparation of silicon single crystal
JPS6117495A (en) * 1984-05-03 1986-01-25 テキサス　インスツルメンツ　インコ−ポレイテツド Formation of silicon single crystal
JPH033244A (en) * 1989-05-30 1991-01-09 Shin Etsu Handotai Co Ltd Heat treatment method for semiconductor silicon substrate
JPH05294780A (en) * 1992-04-21 1993-11-09 Shin Etsu Handotai Co Ltd Production of silicon single crystal
JPH0891993A (en) * 1995-04-27 1996-04-09 Shin Etsu Handotai Co Ltd Production of silicon single crystal substrate and method for quality control
US6350703B1 (en) 1998-07-08 2002-02-26 Canon Kabushiki Kaisha Semiconductor substrate and production method thereof
US6548886B1 (en) 1998-05-01 2003-04-15 Wacker Nsce Corporation Silicon semiconductor wafer and method for producing the same
US6843848B2 (en) 2000-03-24 2005-01-18 Siltronic Ag Semiconductor wafer made from silicon and method for producing the semiconductor wafer
CN103436951A (en) * 2013-08-27 2013-12-11 天津市环欧半导体材料技术有限公司 Drawing method of float-zone silicon single crystals

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831052A (en) * 1971-08-26 1973-04-24

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831052A (en) * 1971-08-26 1973-04-24

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6117495A (en) * 1984-05-03 1986-01-25 テキサス　インスツルメンツ　インコ−ポレイテツド Formation of silicon single crystal
JPS60251190A (en) * 1984-05-25 1985-12-11 Shin Etsu Handotai Co Ltd Preparation of silicon single crystal
JPH033244A (en) * 1989-05-30 1991-01-09 Shin Etsu Handotai Co Ltd Heat treatment method for semiconductor silicon substrate
JPH05294780A (en) * 1992-04-21 1993-11-09 Shin Etsu Handotai Co Ltd Production of silicon single crystal
JPH0891993A (en) * 1995-04-27 1996-04-09 Shin Etsu Handotai Co Ltd Production of silicon single crystal substrate and method for quality control
US6548886B1 (en) 1998-05-01 2003-04-15 Wacker Nsce Corporation Silicon semiconductor wafer and method for producing the same
US6350703B1 (en) 1998-07-08 2002-02-26 Canon Kabushiki Kaisha Semiconductor substrate and production method thereof
US6843848B2 (en) 2000-03-24 2005-01-18 Siltronic Ag Semiconductor wafer made from silicon and method for producing the semiconductor wafer
CN103436951A (en) * 2013-08-27 2013-12-11 天津市环欧半导体材料技术有限公司 Drawing method of float-zone silicon single crystals

Also Published As

Publication number Publication date
JPH0341437B2 (en) 1991-06-24

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