CN1799006A - 微细图形形成材料以及微细图形形成方法 - Google Patents
微细图形形成材料以及微细图形形成方法 Download PDFInfo
- Publication number
- CN1799006A CN1799006A CN200480015273.8A CN200480015273A CN1799006A CN 1799006 A CN1799006 A CN 1799006A CN 200480015273 A CN200480015273 A CN 200480015273A CN 1799006 A CN1799006 A CN 1799006A
- Authority
- CN
- China
- Prior art keywords
- water
- micropicture
- soluble resin
- water soluble
- resist pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
聚合物 | 乙酰化程度(mol%) | 缩醛化程度(mol%) | 熔融热峰值温度(℃) | |
合成例1 | A | 12 | 0 | 200-205 |
合成例2 | B | 12 | 20 | 85-90 |
合成例3 | C | 1 | 20 | 125-130 |
实施例1 | 对比例1 | 对比例2 | 对比例3 | |||||
混合烘焙温度(℃) | 孔的大小(μm) | 所形成的涂层的量(μm) | 孔的大小(μm) | 所形成的涂层的量(μm) | 孔的大小(μm) | 所形成的涂层的量(μm) | 孔的大小(μm) | 所形成的涂层的量(μm) |
组合物 | A | B | C | D | ||||
起始 | 0.220 | - | 0.220 | - | 0.221 | - | 0.220 | - |
105 | 0.174 | 0.046 | 0.155 | 0.065 | 0.172 | 0.049 | 0.170 | 0.050 |
110 | 0.173 | 0.047 | 0.151 | 0.069 | 0.170 | 0.051 | 0.165 | 0.055 |
115 | 0.172 | 0.048 | 0.146 | 0.074 | 0.168 | 0.053 | 0.159 | 0.061 |
120 | 0.171 | 0.049 | 0.128 | 0.092 | 0.167 | 0.054 | 0.143 | 0.077 |
125 | 0.171 | 0.049 | - | - | 0.164 | 0.057 | - | - |
130 | 0.170 | 0.050 | - | - | 0.160 | 0.061 | - | - |
混合烘焙温度(℃) | 缺陷数(个/硅片) | |||
实施例1 | 对比例1 | 对比例2 | 对比例3 | |
105 | 253 | 415 | 288 | 520 |
110 | 180 | 292 | 296 | 405 |
115 | 143 | 198 | 181 | 243 |
120 | 56 | 94 | 90 | 117 |
125 | 39 | 78 | 81 | 89 |
130 | 21 | - | 59 | - |
Claims (4)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP165972/2003 | 2003-06-11 | ||
JP2003165972A JP2005003840A (ja) | 2003-06-11 | 2003-06-11 | 微細パターン形成材料および微細パターン形成方法 |
PCT/JP2004/007832 WO2004111735A1 (ja) | 2003-06-11 | 2004-06-04 | 微細パターン形成材料および微細パターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1799006A true CN1799006A (zh) | 2006-07-05 |
CN1799006B CN1799006B (zh) | 2010-12-22 |
Family
ID=33549241
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200480015273.8A Expired - Fee Related CN1799006B (zh) | 2003-06-11 | 2004-06-04 | 微细图形形成材料以及微细图形形成方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20070059644A1 (zh) |
EP (1) | EP1653287A4 (zh) |
JP (1) | JP2005003840A (zh) |
KR (1) | KR20060020669A (zh) |
CN (1) | CN1799006B (zh) |
TW (1) | TW200510925A (zh) |
WO (1) | WO2004111735A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102347236A (zh) * | 2010-07-29 | 2012-02-08 | 中芯国际集成电路制造(上海)有限公司 | 制作掺杂阱以及包含该掺杂阱的晶体管的方法 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4235466B2 (ja) * | 2003-02-24 | 2009-03-11 | Azエレクトロニックマテリアルズ株式会社 | 水溶性樹脂組成物、パターン形成方法及びレジストパターンの検査方法 |
JP4012480B2 (ja) * | 2003-03-28 | 2007-11-21 | Azエレクトロニックマテリアルズ株式会社 | 微細パターン形成補助剤及びその製造法 |
US7399582B2 (en) * | 2003-07-17 | 2008-07-15 | Az Electronic Materials Usa Corp. | Material for forming fine pattern and method for forming fine pattern using the same |
KR100640587B1 (ko) * | 2004-09-23 | 2006-11-01 | 삼성전자주식회사 | 반도체 소자 제조용 마스크 패턴 및 그 형성 방법과 미세패턴을 가지는 반도체 소자의 제조 방법 |
US7595141B2 (en) | 2004-10-26 | 2009-09-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
WO2006088101A1 (ja) * | 2005-02-18 | 2006-08-24 | Dai Nippon Printing Co., Ltd. | 液晶層形成用インキ組成物と、そのインキ組成物を用いて作製した光学フィルム、偏光フィルム及び液晶表示装置 |
CN100447672C (zh) * | 2005-03-04 | 2008-12-31 | 中芯国际集成电路制造(上海)有限公司 | 一种微细光刻图案方法 |
KR100855845B1 (ko) * | 2006-09-12 | 2008-09-01 | 주식회사 하이닉스반도체 | 반도체 소자의 미세패턴 형성방법 |
US7959818B2 (en) * | 2006-09-12 | 2011-06-14 | Hynix Semiconductor Inc. | Method for forming a fine pattern of a semiconductor device |
KR100876783B1 (ko) | 2007-01-05 | 2009-01-09 | 주식회사 하이닉스반도체 | 반도체 소자의 미세 패턴 형성 방법 |
US7923200B2 (en) * | 2007-04-09 | 2011-04-12 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern comprising a lactam |
JP5069494B2 (ja) * | 2007-05-01 | 2012-11-07 | AzエレクトロニックマテリアルズIp株式会社 | 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法 |
US7745077B2 (en) * | 2008-06-18 | 2010-06-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
JP7065311B2 (ja) * | 2017-11-22 | 2022-05-12 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5691101A (en) * | 1994-03-15 | 1997-11-25 | Kabushiki Kaisha Toshiba | Photosensitive composition |
TW329539B (en) * | 1996-07-05 | 1998-04-11 | Mitsubishi Electric Corp | The semiconductor device and its manufacturing method |
JP3071401B2 (ja) * | 1996-07-05 | 2000-07-31 | 三菱電機株式会社 | 微細パターン形成材料及びこれを用いた半導体装置の製造方法並びに半導体装置 |
TW372337B (en) * | 1997-03-31 | 1999-10-21 | Mitsubishi Electric Corp | Material for forming micropattern and manufacturing method of semiconductor using the material and semiconductor apparatus |
CN1145199C (zh) * | 1997-12-31 | 2004-04-07 | 三菱电机株式会社 | 半导体器件制造方法 |
JP3189773B2 (ja) * | 1998-01-09 | 2001-07-16 | 三菱電機株式会社 | レジストパターン形成方法及びこれを用いた半導体装置の製造方法並びに半導体装置 |
JP3950584B2 (ja) * | 1999-06-29 | 2007-08-01 | Azエレクトロニックマテリアルズ株式会社 | 水溶性樹脂組成物 |
JP2001228616A (ja) * | 2000-02-16 | 2001-08-24 | Mitsubishi Electric Corp | 微細パターン形成材料及びこれを用いた半導体装置の製造方法 |
JP4412440B2 (ja) * | 2000-07-07 | 2010-02-10 | 信越化学工業株式会社 | 微細パターン形成材料並びにこれを用いた微細めっきパターン形成方法および半導体装置の製造方法 |
DE10209024A1 (de) * | 2001-03-07 | 2002-09-19 | Inctec Inc | Photoempfindliche Zusammensetzungen |
US20030008968A1 (en) * | 2001-07-05 | 2003-01-09 | Yoshiki Sugeta | Method for reducing pattern dimension in photoresist layer |
US20030102285A1 (en) * | 2001-11-27 | 2003-06-05 | Koji Nozaki | Resist pattern thickening material, resist pattern and forming method thereof, and semiconductor device and manufacturing method thereof |
JP4012480B2 (ja) * | 2003-03-28 | 2007-11-21 | Azエレクトロニックマテリアルズ株式会社 | 微細パターン形成補助剤及びその製造法 |
-
2003
- 2003-06-11 JP JP2003165972A patent/JP2005003840A/ja active Pending
-
2004
- 2004-06-04 US US10/557,926 patent/US20070059644A1/en not_active Abandoned
- 2004-06-04 WO PCT/JP2004/007832 patent/WO2004111735A1/ja active Application Filing
- 2004-06-04 CN CN200480015273.8A patent/CN1799006B/zh not_active Expired - Fee Related
- 2004-06-04 KR KR1020057023678A patent/KR20060020669A/ko not_active Application Discontinuation
- 2004-06-04 EP EP04745608A patent/EP1653287A4/en not_active Withdrawn
- 2004-06-10 TW TW093116626A patent/TW200510925A/zh unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102347236A (zh) * | 2010-07-29 | 2012-02-08 | 中芯国际集成电路制造(上海)有限公司 | 制作掺杂阱以及包含该掺杂阱的晶体管的方法 |
CN102347236B (zh) * | 2010-07-29 | 2013-09-04 | 中芯国际集成电路制造(上海)有限公司 | 制作掺杂阱以及包含该掺杂阱的晶体管的方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200510925A (en) | 2005-03-16 |
JP2005003840A (ja) | 2005-01-06 |
CN1799006B (zh) | 2010-12-22 |
EP1653287A1 (en) | 2006-05-03 |
EP1653287A4 (en) | 2010-10-06 |
KR20060020669A (ko) | 2006-03-06 |
US20070059644A1 (en) | 2007-03-15 |
WO2004111735A1 (ja) | 2004-12-23 |
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Owner name: AZ ELECTRONIC MATERIALS IP (JAPAN) K.K. Free format text: FORMER NAME: AZ ELECTRONIC MATERIALS (JAPAN) K.K. |
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