CN1729719B - 显示装置和显示装置的制作方法 - Google Patents

显示装置和显示装置的制作方法 Download PDF

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Publication number
CN1729719B
CN1729719B CN2003801067189A CN200380106718A CN1729719B CN 1729719 B CN1729719 B CN 1729719B CN 2003801067189 A CN2003801067189 A CN 2003801067189A CN 200380106718 A CN200380106718 A CN 200380106718A CN 1729719 B CN1729719 B CN 1729719B
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film
sealing
display device
insulating film
display
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Expired - Fee Related
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Chinese (zh)
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CN1729719A (zh
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土屋薰
福本良太
村上智史
乡户宏充
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/841—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/311—Phthalocyanine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
CN2003801067189A 2002-12-19 2003-12-10 显示装置和显示装置的制作方法 Expired - Fee Related CN1729719B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP368984/2002 2002-12-19
JP2002368984 2002-12-19
JP139679/2003 2003-05-16
JP2003139679 2003-05-16
PCT/JP2003/015764 WO2004057920A1 (ja) 2002-12-19 2003-12-10 表示装置及び表示装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2010102245912A Division CN101882668B (zh) 2002-12-19 2003-12-10 显示装置

Publications (2)

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CN1729719A CN1729719A (zh) 2006-02-01
CN1729719B true CN1729719B (zh) 2010-09-15

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CN2003801067189A Expired - Fee Related CN1729719B (zh) 2002-12-19 2003-12-10 显示装置和显示装置的制作方法
CN2010102245912A Expired - Fee Related CN101882668B (zh) 2002-12-19 2003-12-10 显示装置

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Country Status (7)

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US (2) US7190115B2 (enExample)
JP (11) JP4906051B2 (enExample)
KR (1) KR100890957B1 (enExample)
CN (2) CN1729719B (enExample)
AU (1) AU2003288999A1 (enExample)
TW (1) TWI322455B (enExample)
WO (1) WO2004057920A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8179040B2 (en) 2002-12-19 2012-05-15 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of display device

Families Citing this family (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG142140A1 (en) 2003-06-27 2008-05-28 Semiconductor Energy Lab Display device and method of manufacturing thereof
US7928654B2 (en) 2003-08-29 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
JP4741177B2 (ja) * 2003-08-29 2011-08-03 株式会社半導体エネルギー研究所 表示装置の作製方法
US7619258B2 (en) * 2004-03-16 2009-11-17 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2006054111A (ja) * 2004-08-12 2006-02-23 Sony Corp 表示装置
JP2006086085A (ja) * 2004-09-17 2006-03-30 Semiconductor Energy Lab Co Ltd 発光装置
US7791270B2 (en) * 2004-09-17 2010-09-07 Semiconductor Energy Laboratory Co., Ltd Light-emitting device with reduced deterioration of periphery
JP2006128099A (ja) * 2004-10-01 2006-05-18 Semiconductor Energy Lab Co Ltd 表示装置及びその作製方法
US8148895B2 (en) * 2004-10-01 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same
KR100700850B1 (ko) * 2005-03-21 2007-03-29 삼성에스디아이 주식회사 발광표시장치 및 그 제조방법
JP4801382B2 (ja) * 2005-06-15 2011-10-26 東北パイオニア株式会社 自発光パネル及びその製造方法
US7572741B2 (en) 2005-09-16 2009-08-11 Cree, Inc. Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen
KR100879207B1 (ko) * 2005-12-30 2009-01-16 주식회사 엘지화학 플렉시블 디스플레이장치 및 이의 제조방법
TWI298234B (en) * 2006-02-23 2008-06-21 Ind Tech Res Inst A structure and method for improving contact resistance in an organic light emitting diode integrated with a color filter
JP4770519B2 (ja) * 2006-03-01 2011-09-14 セイコーエプソン株式会社 有機発光装置、有機発光装置の製造方法および電子機器
KR100683407B1 (ko) * 2006-03-13 2007-02-22 삼성전자주식회사 표시장치와 이의 제조방법
JP4820226B2 (ja) * 2006-07-18 2011-11-24 パナソニック液晶ディスプレイ株式会社 液晶表示装置
KR100736573B1 (ko) * 2006-08-08 2007-07-06 엘지전자 주식회사 전계발광소자
TWI421607B (zh) * 2006-08-24 2014-01-01 Creator Technology Bv 可撓性裝置上的滲透阻障
TWI308805B (en) * 2006-09-22 2009-04-11 Innolux Display Corp Active matrix oled and fabricating method incorporating the same
KR101383713B1 (ko) * 2007-03-21 2014-04-09 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
JP5208591B2 (ja) 2007-06-28 2013-06-12 株式会社半導体エネルギー研究所 発光装置、及び照明装置
US8465795B2 (en) * 2008-05-20 2013-06-18 Palo Alto Research Center Incorporated Annealing a buffer layer for fabricating electronic devices on compliant substrates
JP5251358B2 (ja) * 2008-08-25 2013-07-31 ソニー株式会社 表示装置
JP5377985B2 (ja) 2009-01-13 2013-12-25 株式会社東芝 半導体発光素子
JP5562696B2 (ja) * 2009-03-27 2014-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8766269B2 (en) 2009-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and electronic device
US8246867B2 (en) * 2009-10-16 2012-08-21 Corning Incorporated Method for assembling an optoelectronic device
KR101097318B1 (ko) 2009-11-25 2011-12-21 삼성모바일디스플레이주식회사 유기 발광 소자 및 이의 제조 방법
TWI589042B (zh) 2010-01-20 2017-06-21 半導體能源研究所股份有限公司 發光裝置，撓性發光裝置，電子裝置，照明設備，以及發光裝置和撓性發光裝置的製造方法
US9000442B2 (en) * 2010-01-20 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, flexible light-emitting device, electronic device, and method for manufacturing light-emitting device and flexible-light emitting device
KR101886801B1 (ko) 2010-09-14 2018-08-10 삼성디스플레이 주식회사 터치 스크린 패널 일체형 평판표시장치
KR101430173B1 (ko) * 2010-10-19 2014-08-13 삼성디스플레이 주식회사 유기 발광 표시 장치
KR101519916B1 (ko) * 2011-04-07 2015-05-13 엘지디스플레이 주식회사 유기 전계 발광 표시 장치 및 그의 제조 방법
JP2013077460A (ja) * 2011-09-30 2013-04-25 Toppan Printing Co Ltd 有機ｅｌパネルの製造方法、有機ｅｌパネル及び有機ｅｌディスプレイ
JP2013165007A (ja) * 2012-02-13 2013-08-22 Panasonic Corp 有機エレクトロルミネッセンス素子及びその製造方法
JP2013186984A (ja) * 2012-03-07 2013-09-19 Panasonic Corp 複合基板構造及びその作製方法、並びに、有機エレクトロルミネッセンス素子
US9112181B2 (en) 2012-02-07 2015-08-18 Panasonic Corporation Composite substrate, manufacturing method of the same and organic electroluminescence device
US12302698B2 (en) 2012-07-31 2025-05-13 Jdi Design And Development G.K. Display unit with moisture proof film outside of seal section and electronic apparatus with said display unit
JP6142151B2 (ja) * 2012-07-31 2017-06-07 株式会社Ｊｏｌｅｄ 表示装置および電子機器
JP6296187B2 (ja) * 2012-07-31 2018-03-20 株式会社Ｊｏｌｅｄ 表示装置および電子機器
KR101992495B1 (ko) * 2013-02-07 2019-06-25 도레이첨단소재 주식회사 유연기판 소재용 측면 봉지재
US9366913B2 (en) * 2013-02-21 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US10031361B2 (en) 2013-06-11 2018-07-24 Sakai Display Products Corporation Liquid crystal panel
KR102132697B1 (ko) * 2013-12-05 2020-07-10 엘지디스플레이 주식회사 휘어진 디스플레이 장치
JP2015195104A (ja) 2014-03-31 2015-11-05 株式会社ジャパンディスプレイ 表示装置
WO2016027547A1 (ja) * 2014-08-19 2016-02-25 株式会社Ｊｏｌｅｄ 表示装置および電子機器
KR101667800B1 (ko) 2014-08-29 2016-10-20 삼성디스플레이 주식회사 디스플레이 장치 및 이의 제조 방법
WO2016067144A1 (en) * 2014-10-28 2016-05-06 Semiconductor Energy Laboratory Co., Ltd. Display device, manufacturing method of display device, and electronic device
KR102456654B1 (ko) 2014-11-26 2022-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
JP6674764B2 (ja) * 2014-12-01 2020-04-01 株式会社半導体エネルギー研究所 表示パネルの作製方法
KR102357269B1 (ko) * 2014-12-12 2022-02-03 삼성디스플레이 주식회사 유기발광 표시장치 및 그 제조방법
JP6683503B2 (ja) * 2015-03-03 2020-04-22 株式会社半導体エネルギー研究所 半導体装置
KR102439506B1 (ko) 2015-10-16 2022-09-02 삼성디스플레이 주식회사 표시 장치
JP6557601B2 (ja) * 2015-12-29 2019-08-07 株式会社ジャパンディスプレイ 表示装置、表示装置の製造方法
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JP6807178B2 (ja) * 2016-07-07 2021-01-06 株式会社ジャパンディスプレイ 表示装置、表示装置の製造方法
JP2018037354A (ja) * 2016-09-01 2018-03-08 株式会社ジャパンディスプレイ 表示装置
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JP6807223B2 (ja) * 2016-11-28 2021-01-06 株式会社ジャパンディスプレイ 表示装置
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US10522524B2 (en) * 2017-06-30 2019-12-31 Lg Display Co., Ltd. Display device and method for fabricating the same
JP6843710B2 (ja) * 2017-07-12 2021-03-17 株式会社ジャパンディスプレイ 表示装置、および表示装置の製造方法
KR101866300B1 (ko) * 2017-11-30 2018-06-11 엘지디스플레이 주식회사 휘어진 디스플레이 장치
JP6867738B2 (ja) * 2018-04-20 2021-05-12 堺ディスプレイプロダクト株式会社 有機ｅｌデバイスの製造方法
KR102019774B1 (ko) * 2018-08-02 2019-11-05 삼성디스플레이 주식회사 표시장치
CN109243305B (zh) * 2018-09-17 2021-10-12 京东方科技集团股份有限公司 显示面板、显示装置和显示面板的制造方法
KR102662722B1 (ko) 2018-09-17 2024-05-02 삼성디스플레이 주식회사 표시장치
JP7391548B2 (ja) * 2019-06-14 2023-12-05 パイオニア株式会社 発光装置の製造方法
KR102322819B1 (ko) * 2019-09-03 2021-11-09 삼성디스플레이 주식회사 표시장치
KR102085060B1 (ko) * 2019-09-03 2020-03-06 삼성디스플레이 주식회사 표시장치
CN111430300B (zh) * 2020-03-31 2023-09-05 京东方科技集团股份有限公司 Oled阵列基板及其制备方法、显示面板及显示装置
CN115715409A (zh) * 2020-06-18 2023-02-24 索尼半导体解决方案公司 显示设备、制造显示设备的方法和电子设备
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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1304182A (zh) * 1999-11-30 2001-07-18 株式会社半导体能源研究所 电子器件

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US18371A (en) * 1857-10-06 Improvement in sewing-machines
JPH03274694A (ja) * 1990-03-23 1991-12-05 Nec Corp 有機薄膜ｅｌ素子
JPH056141A (ja) * 1991-06-27 1993-01-14 Matsushita Electric Ind Co Ltd Ｅｌ表示装置
JP3578828B2 (ja) * 1995-03-21 2004-10-20 株式会社半導体エネルギー研究所 表示装置の作製方法
JPH09148066A (ja) 1995-11-24 1997-06-06 Pioneer Electron Corp 有機ｅｌ素子
JPH09330789A (ja) * 1996-06-10 1997-12-22 Sony Corp 薄膜半導体素子及び薄膜半導体装置ならびにその製造方法および製造装置
JP3774897B2 (ja) 1997-06-03 2006-05-17 ソニー株式会社 有機電界発光素子
JP2000091077A (ja) 1998-09-11 2000-03-31 Sony Corp 有機電界発光素子
JP2000173766A (ja) * 1998-09-30 2000-06-23 Sanyo Electric Co Ltd 表示装置
JP3817081B2 (ja) * 1999-01-29 2006-08-30 パイオニア株式会社 有機ｅｌ素子の製造方法
JP4536198B2 (ja) * 1999-03-15 2010-09-01 株式会社半導体エネルギー研究所 液晶表示装置
TW444257B (en) 1999-04-12 2001-07-01 Semiconductor Energy Lab Semiconductor device and method for fabricating the same
JP2001076866A (ja) * 1999-09-08 2001-03-23 Toray Ind Inc 有機電界発光装置
KR100354823B1 (ko) * 1999-09-10 2002-10-04 전자부품연구원 투명 절연층을 이용한 후막형 전계 발광 소자
JP3423261B2 (ja) * 1999-09-29 2003-07-07 三洋電機株式会社 表示装置
US6876145B1 (en) * 1999-09-30 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Organic electroluminescent display device
TW480722B (en) 1999-10-12 2002-03-21 Semiconductor Energy Lab Manufacturing method of electro-optical device
JP4780826B2 (ja) * 1999-10-12 2011-09-28 株式会社半導体エネルギー研究所 電気光学装置の作製方法
JP2001118674A (ja) * 1999-10-19 2001-04-27 Auto Network Gijutsu Kenkyusho:Kk 有機ｅｌ表示装置
KR100720066B1 (ko) 1999-11-09 2007-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 제작방법
JP2001148291A (ja) 1999-11-19 2001-05-29 Sony Corp 表示装置及びその製造方法
TW493152B (en) 1999-12-24 2002-07-01 Semiconductor Energy Lab Electronic device
JP4491894B2 (ja) 2000-02-17 2010-06-30 凸版印刷株式会社 有機エレクトロルミネッセンス表示素子およびその製造方法
TW507258B (en) * 2000-02-29 2002-10-21 Semiconductor Systems Corp Display device and method for fabricating the same
US7633471B2 (en) * 2000-05-12 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electric appliance
JP5183838B2 (ja) * 2000-05-12 2013-04-17 株式会社半導体エネルギー研究所 発光装置
JP2001357973A (ja) 2000-06-15 2001-12-26 Sony Corp 表示装置
JP4906022B2 (ja) * 2000-08-10 2012-03-28 株式会社半導体エネルギー研究所 アクティブマトリクス型ｅｌ表示装置及び電子機器
US6605826B2 (en) * 2000-08-18 2003-08-12 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and display device
SG125891A1 (en) * 2000-09-08 2006-10-30 Semiconductor Energy Lab Light emitting device, method of manufacturing thesame, and thin film forming apparatus
US6664732B2 (en) * 2000-10-26 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
JP2002216654A (ja) * 2001-01-16 2002-08-02 Toshiba Corp カラー受像管
JP4101529B2 (ja) * 2001-02-22 2008-06-18 株式会社半導体エネルギー研究所 表示装置及びその作製方法
US6992439B2 (en) 2001-02-22 2006-01-31 Semiconductor Energy Laboratory Co., Ltd. Display device with sealing structure for protecting organic light emitting element
US6900470B2 (en) * 2001-04-20 2005-05-31 Kabushiki Kaisha Toshiba Display device and method of manufacturing the same
JP2002318556A (ja) * 2001-04-20 2002-10-31 Toshiba Corp アクティブマトリクス型平面表示装置およびその製造方法
JP4801278B2 (ja) * 2001-04-23 2011-10-26 株式会社半導体エネルギー研究所 発光装置及びその作製方法
JP2002328627A (ja) * 2001-04-27 2002-11-15 Seiko Epson Corp 表示装置の検査方法
JP2003100446A (ja) * 2001-09-21 2003-04-04 Sanyo Electric Co Ltd 有機エレクトロルミネッセンスパネルおよびその製造方法
US7109653B2 (en) * 2002-01-15 2006-09-19 Seiko Epson Corporation Sealing structure with barrier membrane for electronic element, display device, electronic apparatus, and fabrication method for electronic element
JP2003297552A (ja) 2002-03-29 2003-10-17 Pioneer Electronic Corp 有機エレクトロルミネッセンス表示パネル
JP4171258B2 (ja) * 2002-07-25 2008-10-22 三洋電機株式会社 有機ｅｌパネル
WO2004036960A1 (ja) * 2002-10-16 2004-04-29 Idemitsu Kosan Co., Ltd. 有機エレクトロルミネッセンス表示装置及びその製造方法
AU2003288999A1 (en) * 2002-12-19 2004-07-14 Semiconductor Energy Laboratory Co., Ltd. Display unit and method of fabricating display unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1304182A (zh) * 1999-11-30 2001-07-18 株式会社半导体能源研究所 电子器件

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8179040B2 (en) 2002-12-19 2012-05-15 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of display device

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