CN1624934A - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
- Publication number
- CN1624934A CN1624934A CNA2004100120086A CN200410012008A CN1624934A CN 1624934 A CN1624934 A CN 1624934A CN A2004100120086 A CNA2004100120086 A CN A2004100120086A CN 200410012008 A CN200410012008 A CN 200410012008A CN 1624934 A CN1624934 A CN 1624934A
- Authority
- CN
- China
- Prior art keywords
- wiring portion
- source electrode
- main wiring
- semiconductor device
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 84
- 238000009826 distribution Methods 0.000 claims description 116
- 238000003466 welding Methods 0.000 claims description 17
- 229920005591 polysilicon Polymers 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 238000003475 lamination Methods 0.000 claims description 2
- 108091006146 Channels Proteins 0.000 description 51
- 230000009471 action Effects 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000004088 simulation Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
- H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Junction Field-Effect Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP401466/2003 | 2003-12-01 | ||
JP2003401466A JP4802306B2 (ja) | 2003-12-01 | 2003-12-01 | 半導体装置 |
JP401466/03 | 2003-12-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1624934A true CN1624934A (zh) | 2005-06-08 |
CN100372127C CN100372127C (zh) | 2008-02-27 |
Family
ID=34616709
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100120086A Expired - Fee Related CN100372127C (zh) | 2003-12-01 | 2004-09-28 | 半导体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20050116283A1 (zh) |
JP (1) | JP4802306B2 (zh) |
KR (1) | KR100628424B1 (zh) |
CN (1) | CN100372127C (zh) |
TW (1) | TWI238534B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4182986B2 (ja) * | 2006-04-19 | 2008-11-19 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
US7494933B2 (en) * | 2006-06-16 | 2009-02-24 | Synopsys, Inc. | Method for achieving uniform etch depth using ion implantation and a timed etch |
US10692863B2 (en) | 2016-09-30 | 2020-06-23 | Rohm Co., Ltd. | Semiconductor device and semiconductor package |
JP6941502B2 (ja) * | 2016-09-30 | 2021-09-29 | ローム株式会社 | 半導体装置および半導体パッケージ |
US20230352577A1 (en) * | 2022-04-04 | 2023-11-02 | Semiconductor Components Industries, Llc | Vertical shielded gate accumulation field effect transistor |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4343015A (en) * | 1980-05-14 | 1982-08-03 | General Electric Company | Vertical channel field effect transistor |
JPS60140843A (ja) * | 1983-12-28 | 1985-07-25 | Fujitsu Ltd | ゲ−トアレイlsi |
JPH0821713B2 (ja) * | 1987-02-26 | 1996-03-04 | 株式会社東芝 | 導電変調型mosfet |
JPH0575131A (ja) * | 1991-09-17 | 1993-03-26 | Fuji Electric Co Ltd | 半導体素子 |
JPH06350103A (ja) * | 1993-06-08 | 1994-12-22 | Toyota Autom Loom Works Ltd | 半導体装置 |
US5396097A (en) * | 1993-11-22 | 1995-03-07 | Motorola Inc | Transistor with common base region |
US5798554A (en) * | 1995-02-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | MOS-technology power device integrated structure and manufacturing process thereof |
JPH10135237A (ja) * | 1996-10-31 | 1998-05-22 | Sanyo Electric Co Ltd | 化合物半導体装置 |
US5929468A (en) * | 1996-10-31 | 1999-07-27 | Sanyo Electric Co., Ltd. | Compound semiconductor device |
JP3533925B2 (ja) * | 1998-02-03 | 2004-06-07 | 日産自動車株式会社 | 半導体装置 |
JPH11340455A (ja) * | 1998-05-21 | 1999-12-10 | Sanken Electric Co Ltd | 絶縁ゲート形電界効果トランジスタ素子 |
JP3482948B2 (ja) * | 2000-07-25 | 2004-01-06 | 株式会社デンソー | 半導体装置 |
JP3627656B2 (ja) * | 2001-01-29 | 2005-03-09 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
JP2002368193A (ja) * | 2001-06-08 | 2002-12-20 | Sanyo Electric Co Ltd | 化合物半導体スイッチ回路装置 |
JP4215495B2 (ja) * | 2002-01-10 | 2009-01-28 | 三洋電機株式会社 | 配線構造およびその製造方法ならびに配線構造を備えた半導体装置と配線基板 |
JP2003282625A (ja) * | 2002-03-25 | 2003-10-03 | Ricoh Co Ltd | Mosトランジスタおよび該mosトランジスタを用いた電子装置 |
-
2003
- 2003-12-01 JP JP2003401466A patent/JP4802306B2/ja not_active Expired - Fee Related
-
2004
- 2004-09-17 TW TW093128147A patent/TWI238534B/zh not_active IP Right Cessation
- 2004-09-20 KR KR1020040074931A patent/KR100628424B1/ko not_active IP Right Cessation
- 2004-09-28 CN CNB2004100120086A patent/CN100372127C/zh not_active Expired - Fee Related
- 2004-10-20 US US10/968,354 patent/US20050116283A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR20050052985A (ko) | 2005-06-07 |
CN100372127C (zh) | 2008-02-27 |
TW200520233A (en) | 2005-06-16 |
US20050116283A1 (en) | 2005-06-02 |
JP4802306B2 (ja) | 2011-10-26 |
KR100628424B1 (ko) | 2006-09-28 |
TWI238534B (en) | 2005-08-21 |
JP2005166796A (ja) | 2005-06-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Osaka Japan Co-patentee after: Sanyo Semiconductor Manufacturing Co.,Ltd. Patentee after: Sanyo Electric Co.,Ltd. Address before: Osaka Japan Co-patentee before: Niigata SANYO Electric Corp. Patentee before: Sanyo Electric Co.,Ltd. Address after: Osaka Japan Co-patentee after: Niigata SANYO Electric Corp. Patentee after: Sanyo Electric Co.,Ltd. Address before: Osaka Japan Co-patentee before: Qifu Sanyang Electronics Co.,Ltd. Patentee before: Sanyo Electric Co.,Ltd. |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080227 Termination date: 20120928 |