CN1595618A - 晶片边缘刻蚀设备及方法 - Google Patents

晶片边缘刻蚀设备及方法 Download PDF

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Publication number
CN1595618A
CN1595618A CN 200410047417 CN200410047417A CN1595618A CN 1595618 A CN1595618 A CN 1595618A CN 200410047417 CN200410047417 CN 200410047417 CN 200410047417 A CN200410047417 A CN 200410047417A CN 1595618 A CN1595618 A CN 1595618A
Authority
CN
China
Prior art keywords
semiconductor wafer
equipment
electrode
edge
insulation board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN 200410047417
Other languages
English (en)
Chinese (zh)
Inventor
崔昶源
金太龙
金宗范
徐廷宇
边昌柱
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020030033844A external-priority patent/KR100585089B1/ko
Priority claimed from KR1020030070634A external-priority patent/KR100604826B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1595618A publication Critical patent/CN1595618A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
CN 200410047417 2003-05-27 2004-05-27 晶片边缘刻蚀设备及方法 Pending CN1595618A (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR1020030033844A KR100585089B1 (ko) 2003-05-27 2003-05-27 웨이퍼 가장자리를 처리하기 위한 플라즈마 처리장치,플라즈마 처리장치용 절연판, 플라즈마 처리장치용하부전극, 웨이퍼 가장자리의 플라즈마 처리방법 및반도체소자의 제조방법
KR33844/2003 2003-05-27
KR70634/2003 2003-10-10
KR1020030070634A KR100604826B1 (ko) 2003-10-10 2003-10-10 웨이퍼 가장자리를 처리하기 위한 플라즈마 처리장치 및그 플라즈마 처리방법
US10/762,526 2004-01-23
US10/762,526 US20040238488A1 (en) 2003-05-27 2004-01-23 Wafer edge etching apparatus and method

Publications (1)

Publication Number Publication Date
CN1595618A true CN1595618A (zh) 2005-03-16

Family

ID=34108610

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 200410047417 Pending CN1595618A (zh) 2003-05-27 2004-05-27 晶片边缘刻蚀设备及方法

Country Status (4)

Country Link
JP (1) JP2005005701A (enExample)
CN (1) CN1595618A (enExample)
DE (1) DE102004024893A1 (enExample)
TW (1) TWI281713B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102160153A (zh) * 2008-03-14 2011-08-17 朗姆研究公司 使用大于晶圆直径的等离子体排除区域环控制斜面蚀刻膜轮廓
CN101930480B (zh) * 2009-06-19 2012-03-07 中芯国际集成电路制造(上海)有限公司 优化cmos图像传感器版图的方法
CN103715049A (zh) * 2012-09-29 2014-04-09 中微半导体设备(上海)有限公司 等离子体处理装置及调节基片边缘区域制程速率的方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101218114B1 (ko) * 2005-08-04 2013-01-18 주성엔지니어링(주) 플라즈마 식각 장치
US20070068623A1 (en) * 2005-09-27 2007-03-29 Yunsang Kim Apparatus for the removal of a set of byproducts from a substrate edge and methods therefor
US8083890B2 (en) * 2005-09-27 2011-12-27 Lam Research Corporation Gas modulation to control edge exclusion in a bevel edge etching plasma chamber
US7909960B2 (en) 2005-09-27 2011-03-22 Lam Research Corporation Apparatus and methods to remove films on bevel edge and backside of wafer
US8580078B2 (en) * 2007-01-26 2013-11-12 Lam Research Corporation Bevel etcher with vacuum chuck
US8137501B2 (en) * 2007-02-08 2012-03-20 Lam Research Corporation Bevel clean device
CN101981664B (zh) 2008-03-31 2013-08-28 Memc电子材料有限公司 蚀刻硅晶片边缘的方法
CN102282647A (zh) 2008-11-19 2011-12-14 Memc电子材料有限公司 剥除半导体晶片边缘的方法和系统
US8853054B2 (en) 2012-03-06 2014-10-07 Sunedison Semiconductor Limited Method of manufacturing silicon-on-insulator wafers
JP6348321B2 (ja) 2013-05-17 2018-06-27 キヤノンアネルバ株式会社 エッチング装置
KR102116474B1 (ko) * 2020-02-04 2020-05-28 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법
JP2022143889A (ja) 2021-03-18 2022-10-03 キオクシア株式会社 半導体製造装置及び半導体装置の製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10629458B2 (en) 2007-01-26 2020-04-21 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
US10811282B2 (en) 2007-01-26 2020-10-20 Lam Research Corporation Upper plasma-exclusion-zone rings for a bevel etcher
US10832923B2 (en) 2007-01-26 2020-11-10 Lam Research Corporation Lower plasma-exclusion-zone rings for a bevel etcher
CN102160153A (zh) * 2008-03-14 2011-08-17 朗姆研究公司 使用大于晶圆直径的等离子体排除区域环控制斜面蚀刻膜轮廓
CN102160153B (zh) * 2008-03-14 2015-03-11 朗姆研究公司 使用大于晶圆直径的等离子体排除区域环控制斜面蚀刻膜轮廓
CN101930480B (zh) * 2009-06-19 2012-03-07 中芯国际集成电路制造(上海)有限公司 优化cmos图像传感器版图的方法
CN103715049A (zh) * 2012-09-29 2014-04-09 中微半导体设备(上海)有限公司 等离子体处理装置及调节基片边缘区域制程速率的方法
CN103715049B (zh) * 2012-09-29 2016-05-04 中微半导体设备(上海)有限公司 等离子体处理装置及调节基片边缘区域制程速率的方法

Also Published As

Publication number Publication date
JP2005005701A (ja) 2005-01-06
DE102004024893A1 (de) 2005-04-14
TWI281713B (en) 2007-05-21
TW200501256A (en) 2005-01-01

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