TWI281713B - Wafer edge etching apparatus and method - Google Patents
Wafer edge etching apparatus and method Download PDFInfo
- Publication number
- TWI281713B TWI281713B TW93115127A TW93115127A TWI281713B TW I281713 B TWI281713 B TW I281713B TW 93115127 A TW93115127 A TW 93115127A TW 93115127 A TW93115127 A TW 93115127A TW I281713 B TWI281713 B TW I281713B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor wafer
- edge
- electrode
- wafer
- insulating plate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000005530 etching Methods 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 71
- 239000011324 bead Substances 0.000 claims abstract description 16
- 235000012431 wafers Nutrition 0.000 claims description 129
- 239000007787 solid Substances 0.000 claims description 16
- 238000009423 ventilation Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 3
- 244000046052 Phaseolus vulgaris Species 0.000 claims description 2
- 235000010627 Phaseolus vulgaris Nutrition 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- 240000002853 Nelumbo nucifera Species 0.000 claims 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 claims 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 238000011156 evaluation Methods 0.000 claims 1
- 230000005284 excitation Effects 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 claims 1
- 238000010926 purge Methods 0.000 abstract description 5
- 238000013022 venting Methods 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 48
- 239000012212 insulator Substances 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 239000011261 inert gas Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000002826 coolant Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000000153 supplemental effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011090 solid board Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020030033844A KR100585089B1 (ko) | 2003-05-27 | 2003-05-27 | 웨이퍼 가장자리를 처리하기 위한 플라즈마 처리장치,플라즈마 처리장치용 절연판, 플라즈마 처리장치용하부전극, 웨이퍼 가장자리의 플라즈마 처리방법 및반도체소자의 제조방법 |
| KR1020030070634A KR100604826B1 (ko) | 2003-10-10 | 2003-10-10 | 웨이퍼 가장자리를 처리하기 위한 플라즈마 처리장치 및그 플라즈마 처리방법 |
| US10/762,526 US20040238488A1 (en) | 2003-05-27 | 2004-01-23 | Wafer edge etching apparatus and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200501256A TW200501256A (en) | 2005-01-01 |
| TWI281713B true TWI281713B (en) | 2007-05-21 |
Family
ID=34108610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW93115127A TWI281713B (en) | 2003-05-27 | 2004-05-27 | Wafer edge etching apparatus and method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2005005701A (enExample) |
| CN (1) | CN1595618A (enExample) |
| DE (1) | DE102004024893A1 (enExample) |
| TW (1) | TWI281713B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI570763B (zh) * | 2013-05-17 | 2017-02-11 | 佳能安內華股份有限公司 | 蝕刻裝置 |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101218114B1 (ko) * | 2005-08-04 | 2013-01-18 | 주성엔지니어링(주) | 플라즈마 식각 장치 |
| US20070068623A1 (en) * | 2005-09-27 | 2007-03-29 | Yunsang Kim | Apparatus for the removal of a set of byproducts from a substrate edge and methods therefor |
| US8083890B2 (en) * | 2005-09-27 | 2011-12-27 | Lam Research Corporation | Gas modulation to control edge exclusion in a bevel edge etching plasma chamber |
| US7909960B2 (en) | 2005-09-27 | 2011-03-22 | Lam Research Corporation | Apparatus and methods to remove films on bevel edge and backside of wafer |
| US8398778B2 (en) | 2007-01-26 | 2013-03-19 | Lam Research Corporation | Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter |
| US8580078B2 (en) * | 2007-01-26 | 2013-11-12 | Lam Research Corporation | Bevel etcher with vacuum chuck |
| US8137501B2 (en) * | 2007-02-08 | 2012-03-20 | Lam Research Corporation | Bevel clean device |
| CN101981664B (zh) | 2008-03-31 | 2013-08-28 | Memc电子材料有限公司 | 蚀刻硅晶片边缘的方法 |
| CN102282647A (zh) | 2008-11-19 | 2011-12-14 | Memc电子材料有限公司 | 剥除半导体晶片边缘的方法和系统 |
| CN101930480B (zh) * | 2009-06-19 | 2012-03-07 | 中芯国际集成电路制造(上海)有限公司 | 优化cmos图像传感器版图的方法 |
| US8853054B2 (en) | 2012-03-06 | 2014-10-07 | Sunedison Semiconductor Limited | Method of manufacturing silicon-on-insulator wafers |
| CN103715049B (zh) * | 2012-09-29 | 2016-05-04 | 中微半导体设备(上海)有限公司 | 等离子体处理装置及调节基片边缘区域制程速率的方法 |
| KR102116474B1 (ko) * | 2020-02-04 | 2020-05-28 | 피에스케이 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| JP2022143889A (ja) | 2021-03-18 | 2022-10-03 | キオクシア株式会社 | 半導体製造装置及び半導体装置の製造方法 |
-
2004
- 2004-05-19 DE DE200410024893 patent/DE102004024893A1/de not_active Ceased
- 2004-05-26 JP JP2004155918A patent/JP2005005701A/ja not_active Withdrawn
- 2004-05-27 CN CN 200410047417 patent/CN1595618A/zh active Pending
- 2004-05-27 TW TW93115127A patent/TWI281713B/zh not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI570763B (zh) * | 2013-05-17 | 2017-02-11 | 佳能安內華股份有限公司 | 蝕刻裝置 |
| US11195700B2 (en) | 2013-05-17 | 2021-12-07 | Canon Anelva Corporation | Etching apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005005701A (ja) | 2005-01-06 |
| DE102004024893A1 (de) | 2005-04-14 |
| TW200501256A (en) | 2005-01-01 |
| CN1595618A (zh) | 2005-03-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |